ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated
2N6190
Document Number 5912
Issue: 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
PNP SILICON
TRANSISTORS
VCBO Collector – Base Voltage(IE= 0)
VCEO Collector – Emitter Voltage (IB= 0)
VEBO Emitter – Base Voltage (IC= 0)
ICCollector Current
IBBase Current
Ptot Total Dissipation at TC25°C
derate above 25°C
Tstg Storage Temperature Range
TjJunction temperature
80V
80V
6V
5A
1A
10W
17.5°C/W
–55 to +200°C
200°C
MECHANICAL DATA
Dimensions in mm(Inches)
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
TO39 PACKAGE(TO205AD)
Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector
FEATURES
SILICON PLANAR EPITAXIAL PNP
TRANSISTOR
HERMETICALLY SEALED TO-39
PACKAGE
CECC LEVEL SCREENING OPTIONS
JAN LEVEL SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed, the 2N6190 silicon
planar epitaxial PNP transistor is intended for
general purpose applications.
Parameter Test Conditions Min. Typ. Max. Unit
V
µA
µA
mA
µA
µA
V
V
MHz
pF
ns
µs
ns
80 10
10
1.0
100
100
0.7
1.2
1.2
1.8
30
30 120
20
30
1250
300
100
100
20
200
2N6190
Document Number 5912
Issue: 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
V(BR)CEO*
ICBO
ICEX
ICEO
IEBO
VCE(sat)*
VBE(sat)*
hFE*
fT
CIBO
COBO
td
tr
ts
tf
Collector Emitter Breakdown Voltage
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current
Collector-Emitter Cut Off Current
Collector-Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter Voltage
DC Current Gain
Transition Frequency
Input Capacitance, Output Open
Circuited
Open Circuit Output Capacitance
Delay Time
Rise Time
Storage Time
Fall Time
IC= 50mA
IE= 0 VCB = 80V
VBE = 1.5V VCE = 75V
TA= 150°C
IB= 0 VCE = 75V
VBE = 6V
IC= 2A IB= 0.2A
IC= 5A IB= 0.5A
IC= 2A IB= 0.2A
IC= 5A IB= 0.5A
IC= 0.5A VCE = 2V
IC= 2A VCE = 2V
IC= 5A VCE = 2V
VCE = 10V IC= 0.5A
f = 10MHz
VBE = 2V IC= 0
f =100kHz
VCB = 10V IE= 0
f =100kHz
VCC = 40V IE= 2.0A
VBE(off) = 3.0 IB1 = 0.2A
VCC = 40V IE= 2.0A
IB1 = IB2 = 0.2A
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
* Pulse Test: tp= 300µs , δ= 1%.