2N7002E Small Signal MOSFET 60 V, 310 mA, Single, N-Channel, SOT-23 Features * * * * Low RDS(on) Small Footprint Surface Mount Package Trench Technology These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX (Note 1) 60 V 3.0 W @ 4.5 V 310 mA Applications * * * * 2.5 W @ 10 V Low Side Load Switch Level Shift Circuits DC-DC Converter Portable Applications i.e. DSC, PDA, Cell Phone, etc. Simplified Schematic N-Channel 3 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Symbol Value Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGS 20 V Rating Drain Current (Note 1) Steady State t<5s TA = 25C TA = 85C ID mA 260 190 Power Dissipation (Note 1) Steady State t<5s PD Pulsed Drain Current (tp = 10 ms) IDM 1.2 A Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 C Source Current (Body Diode) IS 300 mA Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL 260 C mW 300 420 THERMAL CHARACTERISTICS Symbol Max Unit Junction-to-Ambient - Steady State (Note 1) RqJA 417 C/W Junction-to-Ambient - t 5 s (Note 1) RqJA 300 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) February, 2011 - Rev. 3 3 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. (c) Semiconductor Components Industries, LLC, 2011 2 (Top View) 310 220 TA = 25C TA = 85C Characteristic 1 1 1 703 MG G 2 SOT-23 CASE 318 STYLE 21 1 2 Gate Source 703 = Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N7002ET1G Package Shipping SOT-23 (Pb-Free) 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N7002E/D 2N7002E ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current V 75 VGS = 0 V, VDS = 60 V mV/C TJ = 25C 1 TJ = 125C 500 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS 1.0 4.4 mV/C VGS = 10 V, ID = 240 mA 0.86 2.5 VGS = 4.5 V, ID = 50 mA 1.1 3.0 VDS = 5 V, ID = 200 mA 530 W mS CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 26.7 VGS = 0 V, f = 1 MHz, VDS = 25 V pF 4.6 2.9 Total Gate Charge QG(TOT) 0.81 Threshold Gate Charge QG(TH) 0.31 Gate-to-Source Charge QGS Gate-to-Drain Charge QGD VGS = 5 V, VDS = 10 V; ID = 240 mA 40 nC 0.48 0.08 SWITCHING CHARACTERISTICS, VGS = V (Note 3) Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time tr td(OFF) Fall Time ns 1.7 VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W tf 1.2 4.8 3.6 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA 2. Pulse Test: pulse width 300 ms, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 TJ = 25C 0.79 TJ = 85C 0.7 1.2 V 2N7002E TYPICAL CHARACTERISTICS 4.0 V 3.5 V 0.8 3.0 V 0.4 2.5 V 2.0 V 0 2 4 6 TJ = 125C 0 TJ = -55C 2 4 6 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 4.5 V TJ = 125C 2.0 TJ = 85C 1.6 TJ = 25C 1.2 TJ = -55C 0.8 0.4 0 TJ = 25C 0.4 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2.4 0 0.8 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 1.2 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 4.5 V 9.0 V 8.0 V 7.0 V 6.0 V 1.6 1.2 5.0 V VGS = 10 V 0.2 0.4 0.6 0.8 1.0 1.2 2.4 VGS = 10 V 2.0 TJ = 125C 1.6 TJ = 85C 1.2 TJ = 25C 0.8 TJ = -55C 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Temperature 1.6 2.2 ID = 0.2 A RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 2.0 ID = 250 mA 1.2 ID = 75 mA 0.8 0.4 2 4 6 8 1.8 VGS = 10 V 1.4 1.0 0.6 -50 10 VGS = 4.5 V -25 0 25 50 75 100 125 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 150 2N7002E TYPICAL CHARACTERISTICS 30 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ = 25C VGS = 0 V Ciss 20 Coss 10 0 Crss 0 4 8 12 16 20 5 TJ = 25C ID = 0.25 A 4 3 2 1 0 0 0.2 0.4 0.6 0.8 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 10 VGS = 0 V IS, SOURCE CURRENT (A) C, CAPACITANCE (pF) 40 1 TJ = 85C TJ = 25C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current http://onsemi.com 4 1.2 1 2N7002E PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. 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