2N7002ET1G - ON Semiconductor L.L.C.

February, 2011 − Rev. 3

1Publication Order Number:

2N7002E/D

2N7002E

Small Signal MOSFET

60 V, 310 mA, Single, N−Channel, SOT−23

Features

•Low RDS(on)

•Small Footprint Surface Mount Package

•Trench Technology

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

•Low Side Load Switch

•Level Shift Circuits

•DC−DC Converter

•Portable Applications i.e. DSC, PDA, Cell Phone, etc.

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Rating Symbol Value Unit

Drain−to−Source Voltage VDSS 60 V

Gate−to−Source Voltage VGS ±20 V

Drain Current (Note 1)

Steady State TA = 25°C

TA = 85°C

t < 5 s TA = 25°C

TA = 85°C

ID260

190

310

220

Power Dissipation (Note 1)

Steady State

t < 5 s

PD300

420

Pulsed Drain Current (tp = 10 ms) IDM 1.2 A

Operating Junction and Storage

Temperature Range

TJ, TSTG −55 to

+150

°C

Source Current (Body Diode) IS300 mA

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Junction−to−Ambient − Steady State

(Note 1)

RqJA 417 °C/W

Junction−to−Ambient − t ≤ 5 s (Note 1) RqJA 300

1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in

sq [1 oz] including traces)

Device Package Shipping†

ORDERING INFORMATION

2N7002ET1G 3000/Tape & Reel

Simplified Schematic

SOT−23

CASE 318

STYLE 21

703 MG

703 = Device Code

M = Date Code

G= Pb−Free Package

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain

Gate

Source

http://onsemi.com

SOT−23

(Pb−Free)

60 V 3.0 W @ 4.5 V

RDS(on) MAX

310 mA

ID MAX

(Note 1)

V(BR)DSS

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

2.5 W @ 10 V

(Top View)

N−Channel

(Note: Microdot may be in either location)

2N7002E

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA60 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ75 mV/°C

Zero Gate Voltage Drain Current IDSS VGS = 0 V,

VDS = 60 V

TJ = 25°C 1 mA

TJ = 125°C 500

Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 2.5 V

Negative Threshold Temperature

Coefficient

VGS(TH)/TJ4.4 mV/°C

Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 240 mA 0.86 2.5 W

VGS = 4.5 V, ID = 50 mA 1.1 3.0

Forward Transconductance gFS VDS = 5 V, ID = 200 mA 530 mS

CHARGES AND CAPACITANCES

Input Capacitance CISS

VGS = 0 V, f = 1 MHz,

VDS = 25 V

26.7 40 pF

Output Capacitance COSS 4.6

Reverse Transfer Capacitance CRSS 2.9

Total Gate Charge QG(TOT)

VGS = 5 V, VDS = 10 V;

ID = 240 mA

0.81 nC

Threshold Gate Charge QG(TH) 0.31

Gate−to−Source Charge QGS 0.48

Gate−to−Drain Charge QGD 0.08

SWITCHING CHARACTERISTICS, VGS = V (Note 3)

Turn−On Delay Time td(ON)

VGS = 10 V, VDD = 30 V,

ID = 200 mA, RG = 10 W

1.7 ns

Rise Time tr1.2

Turn−Off Delay Time td(OFF) 4.8

Fall Time tf3.6

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD VGS = 0 V,

IS = 200 mA

TJ = 25°C 0.79 1.2 V

TJ = 85°C 0.7

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

2N7002E

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TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)

6420

0.4

0.8

1.2

1.6

2.0

6420

0.4

0.8

1.2

Figure 3. On−Resistance vs. Drain Current and

Temperature

Figure 4. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (A)

1.21.00.80.60.40.20

0.4

0.8

1.2

1.6

2.0

2.4

Figure 5. On−Resistance vs. Gate−to−Source

Voltage

Figure 6. On−Resistance Variation with

Temperature

VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)

108642

0.4

0.8

1.2

1.6

1251007550250−25−50

0.6

1.0

1.4

1.8

2.2

ID, DRAIN CURRENT (A)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

VGS = 10 V 5.0 V

7.0 V

8.0 V

9.0 V 4.5 V

4.0 V

6.0 V

3.5 V

3.0 V

2.5 V

2.0 V TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = 85°C

VGS = 4.5 V

ID, DRAIN CURRENT (A)

1.21.00.80.60.40.20

0.4

0.8

1.2

1.6

2.0

2.4

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

TJ = −55°C

TJ = 125°C

TJ = 25°C

TJ = 85°C

VGS = 10 V

ID = 250 mA

ID = 75 mA

150

ID = 0.2 A

VGS = 4.5 V

VGS = 10 V

2N7002E

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Qg, TOTAL GATE CHARGE (nC)

10.80.60.40.20

Figure 9. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

1.21.00.80.60.40.2

0.01

VGS, GATE−TO−SOURCE VOLTAGE (V)

IS, SOURCE CURRENT (A)

TJ = 25°C

ID = 0.25 A

201612840

C, CAPACITANCE (pF)

Ciss

Coss

Crss

TJ = 25°C

VGS = 0 V

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

TJ = 25°CTJ = 85°C

VGS = 0 V

0.1

2N7002E

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

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2N7002E/D

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