1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES (DO-13 CASE) FEATURES: 1500 Watts Peak Power 1 ms * High Temperature Operation * Low Clamping Voltage * Metallurgically Bonded 5.5 thru 185 Volts The 1N6036 Series of voltage transient suppressor di- odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac- e 1 Watt D.C. Power @ 75C Lead Temp. teristics coupled with special internal design for rapid junction cooling under pulse power stress makes them e Fast Response (Less than 5 x 10 sec.) most useful in airborne, telephone and other equipment where large voltage transients are frequent. They are bipolar devices. The inherent fast response of these devices and broad choice of stand-off voltage ratings enables the designer to protect a wide range of both active and passive circuit components which may be damaged by voltage tran- sients. FIG 1 MAXIMUM RATINGS: (See Notes) 100 Maximum Temperatures Ambient Storage and Operating Range Tstg Ta -65C.to+175C = (Wavelorm See Figure 4) Lead Temperature (For soldering 0 non-repetitive 1/16 inch from case for 10 sec.) 230C i 1 5 Maximum Power aT Peak Power Dissipation (1.0 msec 1500 Watts = pulse width, T,=25C (Fig 4) P, a, DC Power Dissipation See Fig. 2 * (T, = 25C) Py 1.0 Watt a & Maximum Pulse Currents lop See Fig. 3 1 Notes . . : . . 10008 Ws Ops 1008 ims toms (1) Exceeding these ratings may impair operation of the semiconductor (2) The applied current pulse is as shown in the Pulse Current TgPULSE TIME-SEC vs. Time plot. Maximum Rate of Applications is 2 pulses per minute. PEAK PULSE POWER VS PULSE TIME FIG 3 FIG 4 MAXIMUM ALLOWABLE o _ FIG 2 PEAK PULSE CURRENT = pes TEMPERATURE RATING CURVE Ww & POWER VS AMBIENT TEMPERATURE WL hte WAVEFORM E 3 400 O10 PARAMETERS 7 < < N x PN peak Value tr = lousec = mz Oo KE -Ipp td = 1000usec z 10 3 ip NS a7 4 Oo 9 , N a Half-Vaiue Ipp_ E M 5 [og VA SE = td < < & 50 a 50h - -- + a ' t 10x1900 Waveform GB OS obs Lo w a 3s i 25 S23 > ai ao 1 e | 3 a 0 2 o <= 100 125 150 175 * ; , fo 25 80 75 100 125 180 175 = A aM sien TEMPE : - RATURE - C T- TIME MSEC a AMBIENT TEMPERATURE C PULSE CURRENT VS TIME Semicon 18 Components inc.MAXIMUM TEMPERATURE COEFFICIENT OF BV PEAK PULSE Ibp CURRENT MAXIMUM ANN |TTONMA [ROMaAG |[nRaTO+ |[OMaME lannam |-woneg la-me SNS [Sages [hewers |ANarNS | raada [radnw |ouwuw todd 24 nH | 1m 2 RURAS |VSSVS [SRAAS [CISRS [SBT |VSSSR |SaRNVE [8 REVERSE LEAKAGE @Vp 'y 88888 BBR22 nnn loMNnWN |Win |MnNHNw |HHnHnNH | nHMHMH |HnHwiNwN [HMHNN |oNnoMM |[HnDnMNM |oOMHWN |HoHHMD |nooMDH 24 CLAMPING VOLTAGE (1 mS8EC) Vo VOLTS MAXIMUM QMO |nmon PENNS | SETS |[PSseq |ANNRS [RAaSs |SSSle |SEISS |GoSSs |RKSKS (SISSY | SPaRs [SBIKS [ad 8 |SSR85 | S835 00000 | oneewer leer ere leer e leer [pee leer ee [err er lrrrees lerrre leeweern leer ee lene ere [rere flere reer VOLTAGE @ BY VOLTS | mA BREAKDOWN 22 NON [WOHNA CONS | AUN FON [ON OQA | OANNS | _OOan | at ywrowg ;ooesce jooees ;oeaae @Naas |Orodr |WNsIs [erese INTSKE |SRRIH |SSSSY [SIGHS HBOS | SECIS [RSSSS |Salae |S5Bss |eRSSe |gede $6606 |ad66 VOLTS STAND-OFF VOLTAGE REVERSE TYPE JEDEC ELECTRICAL CHARACTERISTICS at 25C 1N6036 1N6037 1N6047A 1N6048 1N6O48A 1N6049 1N6049A 1N6050 1N6050A 1N6051 1N6051A 1N6052A 1N6053 1N60534 1N6054 1NGOS4A 1N6055 1NGOS5A 1N6056 1N6056A 1N6057 1N6OS7A 1N60S8 IN6058A 1N6059 1N6059A 1N6060 1N6060A 1N6061 1N6061A 1N6062 1N6062A 1N6063 1N6063A 1N6064 1N6064A 1N6065 1N6065A 1N6066 1N6066A 1N6067 1N6067A 1N6068 1N6068A 1N6069 IN6069A 1N6070 1N6070A 1N6071 1N6071A 1N6072 1N6072A 1N6037A 1N6038 1N6038A 1N6039 1N6039A 1N6040 1N6040A 4N6041 4{N60461A 1N6042 1N6042A 1N6043 1N6043A 1N6044 IN6044A, 1N6045 1N6045A 1N6046 1N6046A, 1N6047 1N6052 Semicon Components inc. 19 tAvailable as JAN, JTX, and TXV to Mil-S-19500/507 BV measured after |, applied for 300 msec #Clamping Approx. 1.3 x Max BV