IRFF330,331 3.5 AMPERES 400, 350 VOLTS RDS(ON) =1.00 Preliminary OWMEReIMOS [FET FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GEs advanced Power DMOS technology to achieve low on-resistance with excellent device rugged- ness and reliability. N-CHANNEL BZ CASE STYLE TO-205AF (TO-39) DIMENSIONS ARE IN INCHES AND (MILLIMETERS) This design has been optimized to give superior performance in most switching applications including: switching power supplies, inverters, converters and solenoid/relay drivers. Also, the extended safe operating area with good linear 0.350-0.370 transfer characteristics makes it well suited for many linear care 4 oove-0.a08 applications such as audio amplifiers and servo motors. f_____*fraa0r-8 soy 0.019-0.033 Features 0180-0180 (0.483-0.838) (4.07-4.57) Polysilicon gate Improved stability and reliabilit mane y 9g p y y 0.000.018 Uy Ube fr DRAIN (0.229-0.457) f) e No secondary breakdown Excellent ruggedness q' =) | SOURCE Ultra-fast switching Independent of temperature aT I eo0210 (4.826-5.334) @ Voltage controlled High transconductance Low input capacitance Reduced drive requirement Excellent thermal stability Ease of paralleling 0,029-0.045 (0.737-1.143) 0.028-0.034 (0.711-0.864) [vee | term.1 [| tenm2 | Terma | | to-20sar | source | Gate | oRAN | maximum ratings (Tc = 25C) (unless otherwise specified) RATING SYMBOL IRFF330 IRFF331 UNITS Drain-Source Voltage Voss 400 350 Volts Drain-Gate Voltage, Rgg = 1IMQ VparR 400 350 Volts Continuous Drain Current @ Tg = 25C Ip 3.5 3.5 A Pulsed Drain Current lpm 14 14 A Gate-Source Voltage Ves +20 +20 Volts Total Power Dissipation @ To = 25C Pp 25 25 Watts Derate Above 25C 0.2 0.2 w/G Operating and Storage Junction Temperature Range Ty, Tsta ~55 to 150 -55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Resc 5.0 5.0 C/W Thermal Resistance, Junction to Ambient Rasa 175 175 CAN Maximum Lead Temperature for Soldering Purposes: 1/16 from Case for 10 Seconds TL 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 289electrical characteristics (Tc = 25C) (unless otherwise specified) } CHARACTERISTIC | SYMBOL| MIN | TYP | MAX | UNIT | off characteristics Drain-Source Breakdown Voltage IRFF330 BVpss 400 - _ Volts (Veg = OV, Ip = 250 A) IRFF331 350 _ Zero Gate Voltage Drain Current lpss (Vps = Max Rating, Vag = OV, To = 25C) _ - 250 uA (Vos = Max Rating, 0.8, Veg = OV, To = 125C) _ _ 1000 Gate-Source Leakage Current on characteristics Gate Threshold Voltage To = 25C | Vasctn) 2.0 _ 40 Volts (Vos = Vas; |p = 250 uA) On-State Drain Current | 3.5 _ _ A (V@s = 10V, Vps = 10V) D(ON) Static Drain-Source On-State Resistance (Vag = 10V, Ip = 2A) RDS(ON) - 1.0 Ohms Forward Transconductance (Vpg = 10V, Ip = 2A) fs 1.6 _ _ mhos dynamic characteristics Input Capacitance Vas = OV Ciss _ ~ 900 pF Output Capacitance Vos = 25V Coss - _ 300 pF Reverse Transfer Capacitance f= 1 MHz Crss _ _ 80 pF switching characteristics . Turn-on Delay Time Vps = 175V ta(on) - 15 _ ns Rise Time Ip = 2A, Vag = 15V tr _ 20 _ ns Turn-off Delay Time RGEN = 500, Reg = 12.59 ta (off) _ 30 - ns Fall Time (Res (Equiv.) = 10) tt _ 20 - ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 3.5 A Pulsed Source Current Isom _ _ 14 A Diode Forward Voltage _ (To = 25C, Vag = OV, Ig = 3.5A) Vsp 0 16 Volts Reverse Recovery Time ter _ 600 _ ns (Ig = 3.5A, di,/dt = 100A/usec, To = 125C) QrrR _ 4.0 _ uc *Pulse Test: Pulse width <= 300 us, duty cycle <= 2% 20 14 10 8 To = 25C Ty = 150C MAX. Rtnuc = 5.0 KAW SINGLE PULSE TION IN THIS AREA IS LIMITED BY Rosfon) 1 2 4 6 810 20 40 60 80 100 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 290 2.4 2.2 CONDITIONS: Ripg(on) CONDITIONS: Ip = 2.0 A, Vgg = 10V VG@S(TH) CONDITIONS: Ip = 250uA, Ving = Vag 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 Rosion) AND Vegiqy) NORMALIZED 0.4 0.2 0 40 oO 40 80 Ty, JUNCTION TEMPERATURE {C} TYPICAL NORMALIZED Rogion, AND Vesiry) VS. TEMP. 120 160