VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 30 A FEATURES * Glass passivated pellet chip junction * 150 C max. operating junction temperature 2 3 1 1 2 3 TO-247AC TO-247AC modified Base cathode * Designed and qualified JEDEC(R)-JESD 47 according to * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Base cathode 2, 4 2 * Low forward voltage drop and short reverse recovery time Available APPLICATIONS 1 Cathode 3 Anode Anode 1 VS-30EPF1... Anode 3 These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. VS-30APF1... DESCRIPTION PRODUCT SUMMARY Package TO-247AC modified (2 pins), TO-247AC IF(AV) 30 A VR 1000 V, 1200 V VF at IF 1.41 V IFSM 350 A trr 95 ns TJ max. 150 C Diode variation Single die Snap factor 0.6 The VS-30EPF1... and VS-30APF1... soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 30 A VRRM 1000 to 1200 V IFSM 350 A VF 30 A, TJ = 25 C trr 1 A, 100 A/s 1.41 V 95 ns -40 to +150 C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 C mA VS-30EPF10PbF, VS-30APF10PbF VS-30EPF10-M3, VS-30APF10-M3 1000 1100 VS-30EPF12PbF, VS-30APF12PbF VS-30EPF12-M3, VS-30APF12-M3 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 6 Revision: 11-Feb-16 Document Number: 93705 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 95 C, 180 conduction half sine wave 30 Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 300 Maximum I2t for fusing I2t Maximum I2t for fusing I2t UNITS A 10 ms sine pulse, no voltage reapplied 350 10 ms sine pulse, rated VRRM applied 450 10 ms sine pulse, no voltage reapplied 636 t = 0.1 ms to 10 ms, no voltage reapplied 6360 A2s VALUES UNITS A2s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS 30 A, TJ = 25 C TJ = 150 C TJ = 25 C V m 0.992 V 0.1 VR = Rated VRRM TJ = 150 C 1.41 10.09 mA 6 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor S TEST CONDITIONS IF at 30 Apk 25 A/s 25 C Typical VALUES UNITS 450 ns 6.1 A 2.16 C IFM trr ta tb t dir dt 0.6 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation UNITS -40 to +150 C 0.8 C/W 40 Mounting surface, smooth and greased 0.2 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Approximate weight Mounting torque VALUES Case style TO-247AC modified Marking device Case style TO-247AC 30EPF10 30EPF12 30APF10 30APF12 Revision: 11-Feb-16 Document Number: 93705 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors 80 30.PF.. Series RthJC (DC) = 0.8 K/W 140 Maximum Average Forward Power Loss (W) Maximum Allowable Case Temperature (C) 150 130 O Conduction angle 120 110 100 60 90 120 30 90 180 0 5 10 20 15 30 25 DC 50 40 RMS limit 30 O 20 Conduction period 10 30.PF.. Series TJ = 150 C 0 35 10 30 20 50 40 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 150 350 30.PF.. Series RthJC (DC) = 0.8 K/W 140 130 O Conduction period 120 110 30 100 60 90 90 At any rated load condition and with rated VRRM applied following surge. 300 Peak Half Sine Wave Forward Current (A) Maximum Allowable Case Temperature (C) 60 0 80 Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 250 200 150 100 120 30.PF.. Series DC 180 50 80 10 0 20 40 30 50 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Fig. 2 - Current Rating Characteristics 60 400 180 120 90 60 30 50 40 350 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 180 120 90 60 30 70 RMS limit 30 20 O Conduction angle 10 10 15 20 25 30 250 200 150 30.PF.. Series 0 5 Initial TJ = 150 C No voltage reapplied Rated VRRM reapplied 300 100 30.PF.. Series TJ = 150 C 0 Maximum non-repetitive surge current versus pulse train duration. 35 50 0.01 0.1 1 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 11-Feb-16 Document Number: 93705 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 C TJ = 150 C 10 30.PF.. Series 1 1 0 2 3 4 6 5 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 30.PF.. Series TJ = 25 C trr - Typical Reverse Recovery Time (s) 0.6 6 IFM = 30 A IFM = 20 A Qrr - Typical Reverse Recovery Charge (C) 0.7 IFM = 5 A 0.5 IFM = 1 A 0.4 0.3 0.2 IFM = 20 A 4 3 IFM = 10 A 2 IFM = 5 A 1 0.1 0 IFM = 1 A 0 0 50 100 150 200 0 dI/dt - Rate of Fall of Forward Current (A/s) 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 8 - Recovery Time Characteristics, TJ = 25 C Fig. 10 - Recovery Charge Characteristics, TJ = 25 C 10 1.2 30.PF.. Series TJ = 150 C Qrr - Typical Reverse Recovery Charge (C) 30.PF.. Series TJ = 150 C 1.0 trr - Typical Reverse Recovery Time (s) IFM = 30 A 30.PF.. Series TJ = 25 C 5 IFM = 30 A IFM = 20 A IFM = 10 A IFM = 5 A IFM = 1 A 0.8 0.6 0.4 0.2 IFM = 30 A 8 IFM = 20 A 6 4 IFM = 10 A 2 IFM = 5 A IFM = 1 A 0 0 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 9 - Recovery Time Characteristics, TJ = 150 C 0 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 11 - Recovery Charge Characteristics, TJ = 150 C Revision: 11-Feb-16 Document Number: 93705 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors 35 30.PF.. Series TJ = 25 C 20 30.PF.. Series TJ = 150 C IFM = 30 A 30 IFM = 20 A Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 25 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 IFM = 30 A 25 IFM = 20 A 20 IFM = 10 A 15 IFM = 5 A 10 IFM = 1 A 5 0 0 0 50 100 150 0 200 50 100 150 200 dI/dt - Rate of Fall of Forward Current (A/s) Fig. 12 - Recovery Current Characteristics, TJ = 25 C Fig. 13 - Recovery Current Characteristics, TJ = 150 C ZthJC - Transient Thermal Impedance (K/W) dI/dt - Rate of Fall of Forward Current (A/s) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 30.PF.. Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 11-Feb-16 Document Number: 93705 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30.PF1.PbF Series, VS-30.PF1.-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 E P F 12 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = single diode A = single diode, 3 pins 4 - 5 - Package: P = TO-247AC/TO-247AC modified Type of silicon: F = fast recovery 6 - Voltage code x 100 = VRRM 7 - Environmental digit: 10 = 1000 V 12 = 1200 V PbF = lead (Pb)-free and RoHS-compliant -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30EPF10PbF 25 500 Antistatic plastic tubes VS-30EPF10-M3 25 500 Antistatic plastic tubes VS-30APF10PbF 25 500 Antistatic plastic tubes VS-30APF10-M3 25 500 Antistatic plastic tubes VS-30EPF12PbF 25 500 Antistatic plastic tubes VS-30EPF12-M3 25 500 Antistatic plastic tubes VS-30APF12PbF 25 500 Antistatic plastic tubes VS-30APF12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AC modified TO-247AC www.vishay.com/doc?95542 TO-247AC modified PbF www.vishay.com/doc?95255 TO-247AC modified -M3 www.vishay.com/doc?95442 TO-247AC PbF www.vishay.com/doc?95226 TO-247AC -M3 SPICE model www.vishay.com/doc?95541 www.vishay.com/doc?95007 www.vishay.com/doc?95184 Revision: 11-Feb-16 Document Number: 93705 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC modified - 50 mils L/F DIMENSIONS in millimeters and inches A A (3) (6) O P E B (2) R/2 A2 S (Datum B) O K M DBM O P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb A1 b4 (b1, b3, b5) Plating View A - A C 2x e 0.10 M C A M (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e OK L L1 OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC(R) outline TO-247 with exception of dimension c and Q Revision: 20-Apr-17 Document Number: 95541 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC - 50 mils L/F DIMENSIONS in millimeters and inches A A (3) (6) P E B (2) R/2 A2 S (Datum B) O K M DBM P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L A See view B 2 x b2 3xb 0.10 M C A M 0.01 M D B M View A - A C 2x e A1 b4 (b1, b3, b5) Plating (4) E1 Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e OK L L1 OP O P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) O P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC(R) outline TO-247 with exception of dimension c and Q Revision: 20-Apr-17 Document Number: 95542 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000