© 2013 IXYS CORPORATION, All Rights Reserved DS100501D(10/13)
High Voltage
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4500V~ Electrical Isolation
Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
High Voltage Package
Easy to Mount
Space Savings
High Power Density
Applications
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
IXTF1N450
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 4500 V
VDGR TJ= 25C to 150C, RGS = 1M4500 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 0.9 A
IDM TC= 25C, Pulse Width Limited by TJM 3.0 A
PDTC= 25C 160 W
TJ- 55 ... +150 C
TJM 150 C
Tstg - 55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD Plastic Body for 10s 260 °C
FC Mounting Force 20..120 / 4.5..27 N/lb.
VISOL 50/60Hz, 1 Minute 4500 V~
Weight 6 g
VDSS = 4500V
ID25 = 0.9A
RDS(on) 

 80
1 = Gate 5 = Drain
2 = Source
ISOPLUS i4-PakTM
Isolated Tab
1
5
2
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
VGS(th) VDS = VGS, ID = 250A 3.5 6.0 V
IGSS VGS = 20V, VDS = 0V 100 nA
IDSS VDS = 3.6kV, VGS = 0V 5 A
VDS = 4.5kV 25 μA
VDS = 3.6kV Note 2, TJ = 100C 15 μA
RDS(on) VGS = 10V, ID = 50mA, Note 1 80
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N450
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes: 1. Pulse test, t 300s, duty cycle, d 2%.
2. Part must be heatsunk for high-temp IDSS measurement.
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin 2 = Soure
Pin 3 = Drain
Pin 4 = Isolated
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 50V, ID = 200mA, Note 1 0.40 0.70 S
Ciss 1700 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 80 pF
Crss 29 pF
RGi Gate Input Resistance 12 
td(on) 30 ns
tr 43 ns
td(off) 73 ns
tf 120 ns
Qg(on) 46 nC
Qgs VGS = 10V, VDS = 1kV, ID = 0.5A 8 nC
Qgd 23 nC
RthJC 0.77C/W
RthCS 0.15 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 1 A
ISM Repetitive, Pulse Width Limited by TJM 5 A
VSD IF = 1A, VGS = 0V, Note 1 2.0 V
trr IF = 1A, -di/dt = 50A/μs, VR = 100V 1.75 μs
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5A
RG = 10 (External)
© 2013 IXYS CORPORATION, All Rights Reserved
IXTF1N450
Fig. 2. Output Characteristics @ T
J
= 125ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 20 40 60 80 100 120 140 160
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6V
5V
7V
Fig . 3 . R
DS(on)
No rmalized to I
D
= 0.5A Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50 -25 0 25 50 75 100 125 150
T
J
- Degr ees Cen tigr ade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 0.5A
I
D
= 1A
Fig . 4 . R
DS(on)
Normaliz ed to I
D
= 0.5A Value vs.
Dra in Cu rrent
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.2 0.4 0.6 0.8 1 1.2
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fig. 1. Output Characteristics @ T
J
= 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0 20 40 60 80 100 120 140
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
6.5V
6V
7V
Fig. 6. Input Admittance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
- 40ºC
25ºC
Fig. 5. Maximum Drain Current vs.
Case Temperature
0.0
0.2
0.4
0.6
0.8
1.0
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cent igrade
I
D
- Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTF1N450
Fig. 7 . Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
D
- Amperes
g
f s - Siemens
TJ
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of Intrinsic Diode
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V
SD
- Volts
I
S
- Amperes
TJ
= 125ºC
TJ = 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40 45 50
Q
G
- NanoC oulom bs
V
GS
- Volts
VDS
= 1000V
I D = 0. 5A
I G = 10mA
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitan ce - Pico Farad
s
f
= 1 MH
z
Ciss
Crss
Coss
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Pulse Width - Seconds
Z
(th)JC
- ºC / W
© 2013 IXYS CORPORATION, All Rights Reserved IXYS REF: T_1N450(H7-P640) 10-11-13
IXTF1N450
Fig. 13. Forward-Bia s Safe Operating Area
@ T
C
= 75ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 15 0ºC
T
C
= 75ºC
Singl e Pul s e
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
25µs
Fig. 12. Forward-Bias Safe Operating Area
@ T
C
= 25ºC
0.01
0.1
1
10
100 1,000 10,000
V
DS
- Volts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Sin g le Pulse
100ms
1ms
100µs
R
DS(on)
Limi
t
10ms
DC
25µs
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