MBRM3100 3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEa3 UNDER DEVELOPMENT NEW PRODUCT Features * * * * * Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Reverse Breakdown Voltage For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material: UL Flammability Classification Rating 94V-0 G P 3 * * * * J B Min Max A 4.03 4.09 B 6.40 6.61 H D E Case: POWERMITEa3, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Moisture sensitivity: Level 1 per J-STD-020A Polarity: See Diagram Marking: See Sheet 3 Weight: 0.072 grams (approx.) 1 G 2 M D K C C PIN 1 Note: Pins 1 & 2 must be electrically connected at the printed circuit board. 1.83 NOM 1.10 1.14 .178 NOM 5.01 5.17 J 4.37 4.43 L PIN 3, BOTTOMSIDE HEAT SINK .889 NOM H K L PIN 2 Maximum Ratings Dim C Mechanical Data * * POWERMITEa3 E A .178 NOM .71 .77 M .36 .46 P 1.73 1.83 All Dimensions in mm @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbol Value Unit VRRM VRWM VR 100 V VR(RMS) 70 V IO 3 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) @ TC = 90C IFSM 50 A Typical Thermal Resistance Junction to Soldering Point RqJS 3.5 C/W Typical Thermal Resistance Junction to Case RqJC 1.6 C/W Tj -55 to +125 C TSTG -55 to +150 C Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (See also Figure 5) Operating Temperature Range Storage Temperature Range Electrical Characteristics @ TA = 25C unless otherwise specified Symbol Min Typ Max Unit V(BR)R 100 3/4 3/4 V IR = 0.2mA Forward Voltage (Note 1) VF 3/4 3/4 3/4 3/4 0.72 0.60 0.79 0.68 0.76 3/4 3/4 3/4 V IF = 3A, Tj = 25C IF = 3A, Tj = 100C IF = 6A, Tj = 25C IF = 6A, Tj = 100C Reverse Current (Note 1) IR 3/4 3/4 2 0.5 100 20 mA mA Tj = 25C, VR = 100V Tj = 100C, VR = 100V Total Capacitance CT 3/4 85 3/4 pF f = 1.0MHz, VR = 4.0V DC Characteristic Reverse Breakdown Voltage (Note 1) Notes: Test Condition 1. Short duration test pulse used to minimize self-heating effect. DS30354 Rev. 3 - 1 1 of 3 www.diodes.com MBRM3100 Tj = 25C 1.0 0.1 0.01 0.2 0.4 0.6 0.8 1.0 IR, INSTANTANEOUS REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) Tj = 100C 0 10,000 Tj = 125C 1000 Tj = 100C 100 Tj = 75C 10 Tj = 25C 1 0 20 40 60 80 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 2 Typical Reverse Characteristics VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 1 Typical Forward Characteristics 1000 50 Single Half-Sine-Wave (JEDEC Method) 40 f = 1MHz CT, TOTAL CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) NEW PRODUCT 10 TC = 90C 30 20 100 10 10 0 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 20 40 60 80 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Capacitance vs. Reverse Voltage UNDER DEVELOPMENT DS30354 Rev. 3 - 1 2 of 3 www.diodes.com MBRM3100 3.5 Note 1 3 2.5 Note 2 2 1.5 1 Note 3 0.5 0 25 125 75 100 50 TA, AMBIENT TEMPERATURE (C) Fig. 5 DC Forward Current Derating Ordering Information Notes: 150 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IF, DC FORWARD CURRENT (A) NEW PRODUCT 4 4 Tj = 125C NOTE 2 3 2 1 NOTE 3 0 0 1 2 3 4 5 6 7 IF(AV), AVERAGE FORWARD CURRENT (A) Fig. 6 Forward Power Dissipation (Note 4) Device Packaging Shipping MBRM3100-13 POWERMITEa3 5000/Tape & Reel 1. TA = TSOLDERING POINT, RqJS = 3.5C/W, RqSA = 0C/W. 2. Device mounted on GETEK substrate, 2"x2", 2 oz. copper, double-sided, cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RqJA in range of 25-45C/W. 3. Device mounted on FR-4 substrate, 2"x2", 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 105-130C/W. 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information MBRM3100 YYWW(K) MBRM3100 = Product type marking code = Manufacturers' code marking YYWW = Date code marking YY = Last digit of year ex: 02 for 2002 WW = Week code 01 to 52 (K) = Factory Designator UNDER DEVELOPMENT POWERMITE is a registered trademark of Microsemi Corporation. DS30354 Rev. 3 - 1 3 of 3 www.diodes.com MBRM3100