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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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MPSH11 / MMBTH11 MPSH11 MMBTH11 C E C E TO-92 B B SOT-23 Mark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 A to 10 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for driving FET mixers. Sourced from Process 47. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Voltage 30 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current - Continuous 50 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Max Units MPSH11 350 2.8 125 *MMBTH11 225 1.8 357 556 mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2002 Fairchild Semiconductor Corporation MPSH11/MMBTH11, Rev. B (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 25 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 A, IE = 0 30 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 3.0 V ICBO Collector Cutoff Current VCB = 25 V, IE = 0 100 nA IEBO Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 nA MPSH11 / MMBTH11 NPN RF Transistor ON CHARACTERISTICS hFE DC Current Gain IC = 4.0 mA, VCE = 10 V VCE(sat) Collector-Emitter Saturation Voltage IC = 4.0 mA, IB = 0.4 mA 60 0.5 V VBE(on) Base-Emitter On Voltage IC = 4.0 mA, VCE = 10 V 0.95 V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Ccb Collector-Base Capacitance IC = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz Crb Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz rbc Collector Base Time Constant IC = 4.0 mA, VCB = 10 V, f = 31.8 MHz 650 0.6 MHz 0.7 pF 0.9 pF 9.0 pS *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 3 h FE - DC PULSED CURRE NT GAIN DC Current Gain vs Collector Current 300 VCE = 5V 250 200 150 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.2 = 10 0.15 125 C 0.1 25 25 100 - 40 C 50 0 0.01 VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) Typical Characteristics 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 0.05 - 40 C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 30 MPSH11/MMBTH11, Rev. B (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 C V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAG E (V) Typical Characteristics Base-Emitter ON Voltage vs Collector Current 1 - 40 C 0.8 25 0.6 125 C = 10 0.4 0.2 0.1 IC 1 10 20 30 - COLLE CTOR CURRENT ( mA) 25 0.6 125 C 0.4 0.2 0.01 P D - POWER DISSIPATION (mW) I CBO - COLLECTOR CURRENT (nA) 10 VCB = 30V 1 0.1 25 50 75 100 125 T A - AMBIENT TE MPE RATURE (C) TO-92 250 200 100 50 0 0 25 50 75 100 125 150 Contours of Constant Gain Bandwidth Product (f T ) f = 1.0 MHz 1.8 1.2 C CB 0.6 1 10 REVERSE BIAS VOLTAGE (V) SOT-23 150 TEMPERATURE ( C) 2.4 0 0.1 100 300 150 50 V CE- COLLECTOR VOLTAGE (V) C ibo 0.1 1 10 I C - COLLECTOR CURRENT (mA) 350 Capacitance vs Reverse Bias Voltage 3 V CE = 5.0V Power Dissipation vs Ambient Temperature Collector Cut-Off Current vs Ambient Temperature CAPACITANCE (pF) MPSH11 / MMBTH11 NPN RF Transistor 50 10 1000 MHz 900 MHz 800 MHz 700 MHz 600 MHz 1 500 MHz 300 MHz 200 MHz 100 MHz 400 MHz T A = 25C 0.1 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 MPSH11/MMBTH11, Rev. B (continued) Common Emitter Y Parameters Input Admittance vs Collector Current 14 V CE = 15V f = 45 MHz 12 10 8 g ie 6 b ie 4 2 0 0 4 8 12 16 I C - COLLECTOR CURRENT (mA) 20 Y ie - INPUT ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) Input Admittance vs Collector Current 24 V CE = 10V f = 200 MHz 20 g ie 16 12 b ie 8 4 0 0 2 4 6 8 I C - COLLECTOR CURRENT (mA) 20 16 12 g ie 0 b ie 0 4 8 12 16 VCE - COLLECTOR VOLTAGE 20 Forward Transfer Admittance vs Collector Current 500 V CE = 15V f = 45 MHz 200 100 g fe -b fe 10 1 0 4 8 12 16 20 I C - COLLECTOR CURRENT (mA) 24 Y ie - INPUT ADMITTANCE (mmhos) I C = 7.0 mA 24 f = 200 MHz 20 V CE = 15V I C = 7.0 mA 16 3 g ie 12 Y fe -FORWARD TRANS ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) Y fe -FORWARD TRANS ADMITTANCE (mmhos) 28 4 10 Input Admittance vs Frequency Input Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 8 b ie 4 0 50 100 200 500 f - FREQUENCY (MHz) 1000 Forward Transfer Admittance vs Collector Current 120 V CE = 10V f = 200 MHz 100 -b fe 80 60 40 g fe 20 0 0 2 4 6 8 I C- COLLECTOR CURRENT (mA) 10 MPSH11/MMBTH11, Rev. B (continued) I C = 7.0 mA f = 45 MHz 120 g fe 100 80 -b fe 60 40 20 0 0 4 8 12 16 V CE - COLLECTOR VOLTAGE (V) 20 0.28 V CE = 15V f = 45 MHz 0.24 -b re 0.2 0.16 0.12 0.08 0.04 0 -g re 0 4 8 12 16 I C - COLLECTOR CURRENT (mA) 20 Reverse Transfer Admittance vs Collector Voltage 0.4 I C = 7.0 mA f = 45 MHz 0.36 0.32 0.28 0.24 -b re 0.2 0.16 0.12 0.08 0.04 0 -g re 0 2 4 6 8 10 12 14 16 V CE - COLLECTOR VOLTAGE (V) 18 20 Forward Transfer Admittance vs Frequency 140 V CE = 15V I C = 7.0 mA 120 100 80 60 -b fe 40 g fe 20 0 50 Y re -REVERSE TRANS ADMITTANCE (mmhos) 140 Y re -REVERSE TRANS ADMITTANCE (mmhos) Forward Transfer Admittance vs Collector Voltage Y fe -FORWARD TRANS ADMITTANCE (mmhos) (continued) Reverse Transfer Admittance vs Collector Current Y re -REVERSE TRANS ADMITTANCE (mmhos) Y re -REVERSE TRANS ADMITTANCE (mmhos) Y fe -FORWARD TRANS ADMITTANCE (mmhos) Common Emitter Y Parameters 100 200 500 f - FREQUENCY (MHz) 1000 Reverse Transfer Admittance vs Collector Current 0.6 V CE = 10V f = 200 MHz 0.5 -b re 0.4 0.3 0.2 0.1 -g re 0 0 2 4 6 8 I C- COLLECTOR CURRENT (mA) 10 Reverse Transfer Admittance vs Frequency 1.4 1.2 V CE = 15V I C = 7.0 mA 1 0.8 -b re 0.6 0.4 0.2 0 50 -g re 100 200 500 f - FREQUENCY (MHz) 1000 MPSH11/MMBTH11, Rev. B MPSH11 / MMBTH11 NPN RF Transistor (continued) 1000 b oe goe 100 10 V CE = 15V f = 45 MHz 1 0 4 8 12 16 20 I C - COLLECTOR CURRENT (mA) 24 Output Admittance vs Collector Voltage 10000 I C = 7.0 mA f = 45 MHz 1000 b oe goe 100 10 0 4 8 12 16 20 VCE - COLLECTOR VOLTAGE (V) 24 Yoe - OUTPUT ADMITTANCE (mmhos) Output Admittance vs Collector Current Yoe - OUTPUT ADMITTANCE (mmhos) (continued) Output Admittance vs Collector Current 5 V CE = 10V f = 200 MHz 2 35 0.5 goe 0.2 0.1 0 PG 15 10 NF 5 0 0 10 Output Admittance vs Frequency 10000 V CE = 15V I C = 7.0 mA b oe 1000 3 goe 100 10 50 100 200 500 f - FREQUENCY (MHz) 1000 28 25 20 2 4 6 8 I C - COLLECTOR CURRENT (mA) Conversion Gain vs Collector Current V CC = 12V f = 200 MHz FIG. 2 30 b oe 1 Power Gain and Noise Figure vs Collector Current C GE- CONVERSION GAIN (dB) POWER GAIN AND NOISE FIGURE (dB) Yoe - OUTPUT ADMITTANCE (mmhos) Yoe - OUTPUT ADMITTANCE (mmhos) Common Emitter Y Parameters 2 4 6 8 I C - COLLECTOR CURRENT (mA) 10 MPSH11 / MMBTH11 NPN RF Transistor 26 24 f IF = 45 MHz f O = 200 MHz f LO = 245 MHz V CE = 15V FIG. 1 22 20 18 0 1 2 3 4 I C - COLLECTOR CURRENT (mA) 5 MPSH11/MMBTH11, Rev. B (continued) Test Circuits VCC = 12 V 270 1000 pF 1000 pF 200 mHz Output into 50 L2 RL RS 100 pF 200 mHz Input 0.8-10 pF L1 1000 pF 2.2 K 1000 pF 390 L1 - Ohmite Z-235 RFC L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side VBB FIGURE 1: Unneutralized 200 MHz PG and NF Test Circuit MPSH11/MMBTH11, Rev. B MPSH11 / MMBTH11 NPN RF Transistor (continued) Test Circuits (continued) T1 50 Output 4.0-30 pF 0.002 F 2K 50 Input MPSH11 / MMBTH11 NPN RF Transistor 2.2 K 1/2 W 1000 pF 1000 pF 1000 pF 390 1/2 W 270 1/2 W R.F. Beads VCC = 12 V T1 - Q3 Toroid 4:1 ratio 8 turns Pri. 2 turns Sec. } No. 22 wire VAGC FIGURE 2: 45 MHz Power Gain Circuit 200 mHz Output into 50 T1 300 pF RFin 1.1 pF 2.0 pF LOin 20pF 45 mHz Output into 50 3 L1 245 mHz Input into 50 1000 pF 1000 pF 47 K VBB VCE VCE = 15 V L1 - Ohmite RFC Z235 T1 - Primary 5 turns No. 34 wire 1/4 inch diameter. Secondary runs No. 34 wire close wound over a Q100 core (10.7 mHz). When terminated on secondary side with 50 primary measures 1.5 K, -25 pF. FIGURE 3: 200 MHz Conversion Gain Test Circuit MPSH11/MMBTH11, Rev. B ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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