4Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K1G4 - 128 Meg x 4 x 8 banks MT41K512M8 - 64 Meg x 8 x 8 banks MT41K256M16 - 32 Meg x 16 x 8 banks Description * * * * * DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev :E) data sheet specifications when running in 1.5V compatible mode. Self refresh temperature (SRT) Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration Options Features Marking * Configuration - 1 Gig x 4 - 512 Meg x 8 - 256 Meg x 16 * FBGA package (Pb-free) - x4, x8 - 78-ball (9mm x 10.5mm) Rev. E - 78-ball (7.5mm x 10.6mm) Rev. N - 78-ball (8mm x 10.5mm) Rev. P * FBGA package (Pb-free) - x16 - 96-ball (9mm x 14mm) Rev. E - 96-ball (7.5mm x 13.5mm) Rev. N - 96-ball (8mm x 14mm) Rev. P * Timing - cycle time - 938ps @ CL = 14 (DDR3-2133) - 1.07ns @ CL = 13 (DDR3-1866) - 1.25ns @ CL = 11 (DDR3-1600) * Operating temperature - Commercial (0C T C +95C) - Industrial (-40C T C +95C) - Automotive (-40C T C +105C) * Revision * VDD = V DDQ = 1.35V (1.283-1.45V) * Backward compatible to V DD = V DDQ = 1.5V 0.075V - Supports DDR3L devices to be backward compatible in 1.5V applications * Differential bidirectional data strobe * 8n-bit prefetch architecture * Differential clock inputs (CK, CK#) * 8 internal banks * Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals * Programmable CAS (READ) latency (CL) * Programmable posted CAS additive latency (AL) * Programmable CAS (WRITE) latency (CWL) * Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) * Selectable BC4 or BL8 on-the-fly (OTF) * Self refresh mode * TC of 105C - 64ms, 8192-cycle refresh up to 85C - 32ms, 8192-cycle refresh at >85C to 95C - 16ms, 8192-cycle refresh at >95C to 105C 1G4 512M8 256M16 RH RG DA HA LY TW -093 -107 -125 None IT AT :E/:N/:P Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -093 1, 2 2133 14-14-14 13.09 13.09 13.09 -107 1 1866 13-13-13 13.91 13.91 13.91 -125 1600 11-11-11 13.75 13.75 13.75 Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1600, CL = 11 (-125). 2. Backward compatible to 1866, CL = 13 (-107). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 4Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter Configuration 1 Gig x 4 512 Meg x 8 256 Meg x 16 128 Meg x 4 x 8 banks 64 Meg x 8 x 8 banks 32 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 64K (A[15:0]) 64K (A[15:0]) 32K (A[14:0]) Bank address 8 (BA[2:0]) 8 (BA[2:0]) 8 (BA[2:0]) 2K (A[11, 9:0]) 1K (A[9:0]) 1K (A[9:0]) 1KB 1KB 2KB Column address Page size Figure 1: DDR3L Part Numbers ([DPSOH3DUW1XPEHU 07.0'$3 3DFNDJH &RQILJXUDWLRQ 6SHHG 5HYLVLRQ ^ 07. (13 5HYLVLRQ &RQILJXUDWLRQ *LJ[ * 0HJ[ 0 7HPSHUDWXUH 0HJ[ 0 &RPPHUFLDO 3DFNDJH EDOOPP[PP)%*$ Note: 5HY 0DUN ( 5+ EDOOPP[PP)%*$ 1 5* EDOOPP[PP)%*$ EDOOPP[PP)%*$ 3 ( '$ +$ EDOOPP[PP)%*$ 1 /< EDOOPP[PP)%*$ 3 7: 1RQH ,QGXVWULDOWHPSHUDWXUH ,7 $XWRPRWLYHWHPSHUDWXUH $7 6SHHG*UDGH W &. QV&/ W &. QV&/ W &. QV&/ 1. Not all options listed can be combined to define an offered product. Use the part catalog search on http://www.micron.com for available offerings. FBGA Part Marking Decoder Due to space limitations, FBGA-packaged components have an abbreviated part marking that is different from the part number. For a quick conversion of an FBGA code, see the FBGA Part Marking Decoder on Micron's Web site: http://www.micron.com. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Contents Important Notes and Warnings ....................................................................................................................... 11 State Diagram ................................................................................................................................................ 12 Functional Description ................................................................................................................................... 13 Industrial Temperature ............................................................................................................................... 13 Automotive Temperature ............................................................................................................................ 13 General Notes ............................................................................................................................................ 14 Functional Block Diagrams ............................................................................................................................. 15 Ball Assignments and Descriptions ................................................................................................................. 17 Package Dimensions ....................................................................................................................................... 23 Electrical Specifications .................................................................................................................................. 29 Absolute Ratings ......................................................................................................................................... 29 Input/Output Capacitance .......................................................................................................................... 30 Thermal Characteristics .................................................................................................................................. 31 Electrical Specifications - IDD Specifications and Conditions ............................................................................ 33 Electrical Characteristics - Operating IDD Specifications .................................................................................. 44 Electrical Specifications - DC and AC .............................................................................................................. 49 DC Operating Conditions ........................................................................................................................... 49 Input Operating Conditions ........................................................................................................................ 50 DDR3L 1.35V AC Overshoot/Undershoot Specification ................................................................................ 54 DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals .............................................................. 57 DDR3L 1.35V Slew Rate Definitions for Differential Input Signals ................................................................. 59 ODT Characteristics ....................................................................................................................................... 60 1.35V ODT Resistors ................................................................................................................................... 61 ODT Sensitivity .......................................................................................................................................... 62 ODT Timing Definitions ............................................................................................................................. 62 Output Driver Impedance ............................................................................................................................... 66 34 Ohm Output Driver Impedance .............................................................................................................. 67 DDR3L 34 Ohm Driver ................................................................................................................................ 68 DDR3L 34 Ohm Output Driver Sensitivity .................................................................................................... 69 DDR3L Alternative 40 Ohm Driver ............................................................................................................... 70 DDR3L 40 Ohm Output Driver Sensitivity .................................................................................................... 70 Output Characteristics and Operating Conditions ............................................................................................ 72 Reference Output Load ............................................................................................................................... 75 Slew Rate Definitions for Single-Ended Output Signals ................................................................................. 75 Slew Rate Definitions for Differential Output Signals .................................................................................... 77 Speed Bin Tables ............................................................................................................................................ 78 Electrical Characteristics and AC Operating Conditions ................................................................................... 83 Command and Address Setup, Hold, and Derating .......................................................................................... 103 Data Setup, Hold, and Derating ...................................................................................................................... 110 Commands - Truth Tables ............................................................................................................................. 118 Commands ................................................................................................................................................... 121 DESELECT ................................................................................................................................................ 121 NO OPERATION ........................................................................................................................................ 121 ZQ CALIBRATION LONG ........................................................................................................................... 121 ZQ CALIBRATION SHORT .......................................................................................................................... 121 ACTIVATE ................................................................................................................................................. 121 READ ........................................................................................................................................................ 121 WRITE ...................................................................................................................................................... 122 PRECHARGE ............................................................................................................................................. 123 REFRESH .................................................................................................................................................. 123 09005aef85af8fa8 4Gb_DDR3L.pdf - 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R 09/18 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description SELF REFRESH .......................................................................................................................................... 124 DLL Disable Mode ..................................................................................................................................... 125 Input Clock Frequency Change ...................................................................................................................... 129 Write Leveling ............................................................................................................................................... 131 Write Leveling Procedure ........................................................................................................................... 133 Write Leveling Mode Exit Procedure ........................................................................................................... 135 Initialization ................................................................................................................................................. 136 Voltage Initialization/Change ........................................................................................................................ 138 VDD Voltage Switching ............................................................................................................................... 139 Mode Registers .............................................................................................................................................. 140 Mode Register 0 (MR0) ................................................................................................................................... 141 Burst Length ............................................................................................................................................. 141 Burst Type ................................................................................................................................................. 142 DLL RESET ................................................................................................................................................ 143 Write Recovery .......................................................................................................................................... 144 Precharge Power-Down (Precharge PD) ...................................................................................................... 144 CAS Latency (CL) ....................................................................................................................................... 144 Mode Register 1 (MR1) ................................................................................................................................... 146 DLL Enable/DLL Disable ........................................................................................................................... 146 Output Drive Strength ............................................................................................................................... 147 OUTPUT ENABLE/DISABLE ...................................................................................................................... 147 TDQS Enable ............................................................................................................................................. 147 On-Die Termination .................................................................................................................................. 148 WRITE LEVELING ..................................................................................................................................... 148 POSTED CAS ADDITIVE Latency ................................................................................................................ 148 Mode Register 2 (MR2) ................................................................................................................................... 149 CAS Write Latency (CWL) ........................................................................................................................... 150 AUTO SELF REFRESH (ASR) ....................................................................................................................... 150 SELF REFRESH TEMPERATURE (SRT) ........................................................................................................ 150 SRT vs. ASR ............................................................................................................................................... 151 DYNAMIC ODT ......................................................................................................................................... 151 Mode Register 3 (MR3) ................................................................................................................................... 151 MULTIPURPOSE REGISTER (MPR) ............................................................................................................ 152 MPR Functional Description ...................................................................................................................... 153 MPR Register Address Definitions and Bursting Order ................................................................................. 154 MPR Read Predefined Pattern .................................................................................................................... 159 MODE REGISTER SET (MRS) Command ........................................................................................................ 159 ZQ CALIBRATION Operation ......................................................................................................................... 160 ACTIVATE Operation ..................................................................................................................................... 161 READ Operation ............................................................................................................................................ 163 WRITE Operation .......................................................................................................................................... 174 DQ Input Timing ....................................................................................................................................... 182 PRECHARGE Operation ................................................................................................................................. 184 SELF REFRESH Operation .............................................................................................................................. 184 Extended Temperature Usage ........................................................................................................................ 186 Power-Down Mode ........................................................................................................................................ 187 RESET Operation ........................................................................................................................................... 195 On-Die Termination (ODT) ............................................................................................................................ 197 Functional Representation of ODT ............................................................................................................. 197 Nominal ODT ............................................................................................................................................ 197 Dynamic ODT ............................................................................................................................................... 199 Dynamic ODT Special Use Case ................................................................................................................. 199 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. 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All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Functional Description .............................................................................................................................. 199 Synchronous ODT Mode ................................................................................................................................ 205 ODT Latency and Posted ODT .................................................................................................................... 205 Timing Parameters .................................................................................................................................... 205 ODT Off During READs .............................................................................................................................. 208 Asynchronous ODT Mode .............................................................................................................................. 210 Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) .................................................. 212 Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) ........................................................ 214 Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) ...................................................... 216 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. 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All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description List of Figures Figure 1: DDR3L Part Numbers ........................................................................................................................ 2 Figure 2: Simplified State Diagram ................................................................................................................. 12 Figure 3: 1 Gig x 4 Functional Block Diagram .................................................................................................. 15 Figure 4: 512 Meg x 8 Functional Block Diagram ............................................................................................. 16 Figure 5: 256 Meg x 16 Functional Block Diagram ........................................................................................... 16 Figure 6: 78-Ball FBGA - x4, x8 (Top View) ...................................................................................................... 17 Figure 7: 96-Ball FBGA - x16 (Top View) ......................................................................................................... 18 Figure 8: 78-Ball FBGA - x4, x8 (RH) ............................................................................................................... 23 Figure 9: 78-Ball FBGA - x4, x8 (RG) ............................................................................................................... 24 Figure 10: 78-Ball FBGA - x4, x8 (DA) ............................................................................................................. 25 Figure 11: 96-Ball FBGA - x16 (HA) ................................................................................................................. 26 Figure 12: 96-Ball FBGA - x16 (LY) .................................................................................................................. 27 Figure 13: 96-Ball FBGA - x16 (TW) ................................................................................................................ 28 Figure 14: Thermal Measurement Point ......................................................................................................... 31 Figure 15: DDR3L 1.35V Input Signal .............................................................................................................. 53 Figure 16: Overshoot ..................................................................................................................................... 54 Figure 17: Undershoot ................................................................................................................................... 55 Figure 18: V IX for Differential Signals .............................................................................................................. 55 Figure 19: Single-Ended Requirements for Differential Signals ........................................................................ 55 Figure 20: Definition of Differential AC-Swing and tDVAC ............................................................................... 56 Figure 21: Nominal Slew Rate Definition for Single-Ended Input Signals .......................................................... 58 Figure 22: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# .............. 59 Figure 23: ODT Levels and I-V Characteristics ................................................................................................ 60 Figure 24: ODT Timing Reference Load .......................................................................................................... 63 Figure 25: tAON and tAOF Definitions ............................................................................................................ 64 Figure 26: tAONPD and tAOFPD Definitions ................................................................................................... 64 Figure 27: tADC Definition ............................................................................................................................. 65 Figure 28: Output Driver ................................................................................................................................ 66 Figure 29: DQ Output Signal .......................................................................................................................... 73 Figure 30: Differential Output Signal .............................................................................................................. 74 Figure 31: Reference Output Load for AC Timing and Output Slew Rate ........................................................... 75 Figure 32: Nominal Slew Rate Definition for Single-Ended Output Signals ....................................................... 76 Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS# .................................................... 77 Figure 34: Nominal Slew Rate and tVAC for tIS (Command and Address - Clock) ............................................. 106 Figure 35: Nominal Slew Rate for tIH (Command and Address - Clock) ........................................................... 107 Figure 36: Tangent Line for tIS (Command and Address - Clock) .................................................................... 108 Figure 37: Tangent Line for tIH (Command and Address - Clock) .................................................................... 109 Figure 38: Nominal Slew Rate and tVAC for tDS (DQ - Strobe) ......................................................................... 114 Figure 39: Nominal Slew Rate for tDH (DQ - Strobe) ...................................................................................... 115 Figure 40: Tangent Line for tDS (DQ - Strobe) ................................................................................................ 116 Figure 41: Tangent Line for tDH (DQ - Strobe) ............................................................................................... 117 Figure 42: Refresh Mode ............................................................................................................................... 124 Figure 43: DLL Enable Mode to DLL Disable Mode ........................................................................................ 126 Figure 44: DLL Disable Mode to DLL Enable Mode ........................................................................................ 127 Figure 45: DLL Disable tDQSCK .................................................................................................................... 128 Figure 46: Change Frequency During Precharge Power-Down ........................................................................ 130 Figure 47: Write Leveling Concept ................................................................................................................. 131 Figure 48: Write Leveling Sequence ............................................................................................................... 134 Figure 49: Write Leveling Exit Procedure ....................................................................................................... 135 Figure 50: Initialization Sequence ................................................................................................................. 137 09005aef85af8fa8 4Gb_DDR3L.pdf - 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All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Figure 51: V DD Voltage Switching .................................................................................................................. 139 Figure 52: MRS to MRS Command Timing ( tMRD) ......................................................................................... 140 Figure 53: MRS to nonMRS Command Timing ( tMOD) .................................................................................. 141 Figure 54: Mode Register 0 (MR0) Definitions ................................................................................................ 142 Figure 55: READ Latency .............................................................................................................................. 145 Figure 56: Mode Register 1 (MR1) Definition ................................................................................................. 146 Figure 57: READ Latency (AL = 5, CL = 6) ....................................................................................................... 149 Figure 58: Mode Register 2 (MR2) Definition ................................................................................................. 149 Figure 59: CAS Write Latency ........................................................................................................................ 150 Figure 60: Mode Register 3 (MR3) Definition ................................................................................................. 152 Figure 61: Multipurpose Register (MPR) Block Diagram ................................................................................. 153 Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout ..................................... 155 Figure 63: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout .......................... 156 Figure 64: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble .................................... 157 Figure 65: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble .................................... 158 Figure 66: ZQ CALIBRATION Timing (ZQCL and ZQCS) ................................................................................. 160 Figure 67: Example: Meeting tRRD (MIN) and tRCD (MIN) ............................................................................. 161 Figure 68: Example: tFAW ............................................................................................................................. 162 Figure 69: READ Latency .............................................................................................................................. 163 Figure 70: Consecutive READ Bursts (BL8) .................................................................................................... 165 Figure 71: Consecutive READ Bursts (BC4) .................................................................................................... 165 Figure 72: Nonconsecutive READ Bursts ....................................................................................................... 166 Figure 73: READ (BL8) to WRITE (BL8) .......................................................................................................... 166 Figure 74: READ (BC4) to WRITE (BC4) OTF .................................................................................................. 167 Figure 75: READ to PRECHARGE (BL8) .......................................................................................................... 167 Figure 76: READ to PRECHARGE (BC4) ......................................................................................................... 168 Figure 77: READ to PRECHARGE (AL = 5, CL = 6) ........................................................................................... 168 Figure 78: READ with Auto Precharge (AL = 4, CL = 6) ..................................................................................... 168 Figure 79: Data Output Timing - tDQSQ and Data Valid Window .................................................................... 170 Figure 80: Data Strobe Timing - READs ......................................................................................................... 171 Figure 81: Method for Calculating tLZ and tHZ ............................................................................................... 172 Figure 82: tRPRE Timing ............................................................................................................................... 172 Figure 83: tRPST Timing ............................................................................................................................... 173 Figure 84: tWPRE Timing .............................................................................................................................. 175 Figure 85: tWPST Timing .............................................................................................................................. 175 Figure 86: WRITE Burst ................................................................................................................................ 176 Figure 87: Consecutive WRITE (BL8) to WRITE (BL8) ..................................................................................... 177 Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via OTF ........................................................................ 177 Figure 89: Nonconsecutive WRITE to WRITE ................................................................................................. 178 Figure 90: WRITE (BL8) to READ (BL8) .......................................................................................................... 178 Figure 91: WRITE to READ (BC4 Mode Register Setting) ................................................................................. 179 Figure 92: WRITE (BC4 OTF) to READ (BC4 OTF) ........................................................................................... 180 Figure 93: WRITE (BL8) to PRECHARGE ........................................................................................................ 181 Figure 94: WRITE (BC4 Mode Register Setting) to PRECHARGE ...................................................................... 181 Figure 95: WRITE (BC4 OTF) to PRECHARGE ................................................................................................ 182 Figure 96: Data Input Timing ........................................................................................................................ 183 Figure 97: Self Refresh Entry/Exit Timing ...................................................................................................... 185 Figure 98: Active Power-Down Entry and Exit ................................................................................................ 189 Figure 99: Precharge Power-Down (Fast-Exit Mode) Entry and Exit ................................................................. 189 Figure 100: Precharge Power-Down (Slow-Exit Mode) Entry and Exit .............................................................. 190 Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP) ........................................... 190 Figure 102: Power-Down Entry After WRITE .................................................................................................. 191 09005aef85af8fa8 4Gb_DDR3L.pdf - 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R 09/18 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Figure 103: Figure 104: Figure 105: Figure 106: Figure 107: Figure 108: Figure 109: Figure 110: Figure 111: Figure 112: Figure 113: Figure 114: Figure 115: Figure 116: Figure 117: Figure 118: Figure 119: Figure 120: Figure 121: Figure 122: Figure 123: Power-Down Entry After WRITE with Auto Precharge (WRAP) ...................................................... 191 REFRESH to Power-Down Entry .................................................................................................. 192 ACTIVATE to Power-Down Entry ................................................................................................. 192 PRECHARGE to Power-Down Entry ............................................................................................. 193 MRS Command to Power-Down Entry ......................................................................................... 193 Power-Down Exit to Refresh to Power-Down Entry ....................................................................... 194 RESET Sequence ......................................................................................................................... 196 On-Die Termination ................................................................................................................... 197 Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 .................................................... 202 Dynamic ODT: Without WRITE Command .................................................................................. 202 Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 ............ 203 Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 .......................... 204 Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 .......................... 204 Synchronous ODT ...................................................................................................................... 206 Synchronous ODT (BC4) ............................................................................................................. 207 ODT During READs .................................................................................................................... 209 Asynchronous ODT Timing with Fast ODT Transition .................................................................. 211 Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry ............ 213 Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit ............... 215 Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping ..................... 217 Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping ................... 217 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. 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All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description List of Tables Table 1: Key Timing Parameters ....................................................................................................................... 1 Table 2: Addressing ......................................................................................................................................... 2 Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions .............................................................................................. 19 Table 4: 96-Ball FBGA - x16 Ball Descriptions ................................................................................................. 21 Table 5: Absolute Maximum Ratings .............................................................................................................. 29 Table 6: DDR3L Input/Output Capacitance .................................................................................................... 30 Table 7: Thermal Characteristics .................................................................................................................... 31 Table 8: Thermal Impedance ......................................................................................................................... 32 Table 9: Timing Parameters Used for I DD Measurements - Clock Units ............................................................ 33 Table 10: IDD0 Measurement Loop .................................................................................................................. 34 Table 11: IDD1 Measurement Loop .................................................................................................................. 35 Table 12: IDD Measurement Conditions for Power-Down Currents ................................................................... 36 Table 13: IDD2N and IDD3N Measurement Loop ................................................................................................ 37 Table 14: IDD2NT Measurement Loop .............................................................................................................. 37 Table 15: IDD4R Measurement Loop ................................................................................................................ 38 Table 16: IDD4W Measurement Loop ............................................................................................................... 39 Table 17: IDD5B Measurement Loop ................................................................................................................ 40 Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 .................................................................... 41 Table 19: IDD7 Measurement Loop .................................................................................................................. 42 Table 20: IDD Maximum Limits Die Rev. E for 1.35/1.5V Operation ................................................................... 44 Table 21: IDD Maximum Limits Die Rev. N for 1.35V/1.5V Operation ................................................................ 45 Table 22: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation ................................................................. 47 Table 23: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions .............................................. 49 Table 24: DDR3L 1.35V DC Electrical Characteristics and Input Conditions ..................................................... 50 Table 25: DDR3L 1.35V Input Switching Conditions - Command and Address ................................................. 51 Table 26: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) .............................. 52 Table 27: DDR3L Control and Address Pins ..................................................................................................... 54 Table 28: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins ............................................................................. 54 Table 29: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback ... 56 Table 30: Single-Ended Input Slew Rate Definition .......................................................................................... 57 Table 31: DDR3L 1.35V Differential Input Slew Rate Definition ........................................................................ 59 Table 32: On-Die Termination DC Electrical Characteristics ............................................................................ 60 Table 33: 1.35V RTT Effective Impedance ........................................................................................................ 61 Table 34: ODT Sensitivity Definition .............................................................................................................. 62 Table 35: ODT Temperature and Voltage Sensitivity ........................................................................................ 62 Table 36: ODT Timing Definitions .................................................................................................................. 63 Table 37: DDR3L(1.35V) Reference Settings for ODT Timing Measurements .................................................... 63 Table 38: DDR3L 34 Ohm Driver Impedance Characteristics ........................................................................... 67 Table 39: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations ........................................... 68 Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.35V ..................................... 68 Table 41: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.45V ..................................... 68 Table 42: DDR3L 34 Ohm Driver IOH/IOL Characteristics: V DD = V DDQ = DDR3L@1.283 ..................................... 69 Table 43: DDR3L 34 Ohm Output Driver Sensitivity Definition ........................................................................ 69 Table 44: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity .................................................. 69 Table 45: DDR3L 40 Ohm Driver Impedance Characteristics ........................................................................... 70 Table 46: DDR3L 40 Ohm Output Driver Sensitivity Definition ........................................................................ 70 Table 47: 40 Ohm Output Driver Voltage and Temperature Sensitivity .............................................................. 71 Table 48: DDR3L Single-Ended Output Driver Characteristics ......................................................................... 72 Table 49: DDR3L Differential Output Driver Characteristics ............................................................................ 73 Table 50: DDR3L Differential Output Driver Characteristics V OX(AC) ................................................................. 74 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. 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All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Description Table 51: Table 52: Table 53: Table 54: Table 55: Table 56: Table 57: Table 58: Table 59: Table 60: Table 61: Table 62: Table 63: Table 64: Table 65: Table 66: Table 67: Table 68: Table 69: Table 70: Table 71: Table 72: Table 73: Table 74: Table 75: Table 76: Table 77: Table 78: Table 79: Table 80: Table 81: Table 82: Table 83: Table 84: Table 85: Table 86: Table 87: Table 88: Table 89: Table 90: Table 91: Table 92: Single-Ended Output Slew Rate Definition ....................................................................................... 75 Differential Output Slew Rate Definition .......................................................................................... 77 DDR3L-1066 Speed Bins .................................................................................................................. 78 DDR3L-1333 Speed Bins .................................................................................................................. 79 DDR3L-1600 Speed Bins .................................................................................................................. 80 DDR3L-1866 Speed Bins .................................................................................................................. 81 DDR3L-2133 Speed Bins .................................................................................................................. 82 Electrical Characteristics and AC Operating Conditions .................................................................... 83 Electrical Characteristics and AC Operating Conditions for Speed Extensions .................................... 93 DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced - AC/DC-Based ............... 103 DDR3L-800/1066 Derating Values tIS/tIH - AC160/DC90-Based ....................................................... 104 DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH - AC135/DC90-Based ................................ 104 DDR3L-1866/2133 Derating Values for tIS/tIH - AC125/DC90-Based ................................................ 104 DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL[AC]) for Valid ADD/CMD Transition . 105 DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) - AC/DC-Based ....................... 110 DDR3L Derating Values for tDS/tDH - AC160/DC90-Based .............................................................. 111 DDR3L Derating Values for tDS/tDH - AC135/DC90-Based .............................................................. 111 DDR3L Derating Values for tDS/tDH - AC130/DC90-Based at 2V/ns ................................................. 112 DDR3L Minimum Required Time tVAC Above V IH(AC) (Below V IL(AC)) for Valid DQ Transition ............. 113 Truth Table - Command ................................................................................................................. 118 Truth Table - CKE .......................................................................................................................... 120 READ Command Summary ............................................................................................................ 122 WRITE Command Summary .......................................................................................................... 122 READ Electrical Characteristics, DLL Disable Mode ......................................................................... 128 Write Leveling Matrix ..................................................................................................................... 132 Burst Order .................................................................................................................................... 143 MPR Functional Description of MR3 Bits ........................................................................................ 153 MPR Readouts and Burst Order Bit Mapping ................................................................................... 154 Self Refresh Temperature and Auto Self Refresh Description ............................................................ 186 Self Refresh Mode Summary ........................................................................................................... 186 Command to Power-Down Entry Parameters .................................................................................. 187 Power-Down Modes ....................................................................................................................... 188 Truth Table - ODT (Nominal) ......................................................................................................... 198 ODT Parameters ............................................................................................................................ 198 Write Leveling with Dynamic ODT Special Case .............................................................................. 199 Dynamic ODT Specific Parameters ................................................................................................. 200 Mode Registers for RTT,nom ............................................................................................................. 200 Mode Registers for RTT(WR) ............................................................................................................. 201 Timing Diagrams for Dynamic ODT ................................................................................................ 201 Synchronous ODT Parameters ........................................................................................................ 206 Asynchronous ODT Timing Parameters for All Speed Bins ............................................................... 211 ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period ................................... 213 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Important Notes and Warnings Important Notes and Warnings Micron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions. This document supersedes and replaces all information supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorized by Micron. Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micron products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damage resulting from any use of non-automotive-grade products in automotive applications. Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage ("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of the Micron component will not result in such harms. Should customer or distributor purchase, use, or sell any Micron component for any critical application, customer and distributor shall indemnify and hold harmless Micron and its subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims, costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim of product liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of the Micron product. Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems, applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINE WHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, OR PRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are included in customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component. Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequential damages (including without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort, warranty, breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's duly authorized representative. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM State Diagram State Diagram Figure 2: Simplified State Diagram CKE L Power applied Power on MRS, MPR, write leveling Initialization Reset procedure Self refresh SRE ZQCL From any state RESET ZQ calibration MRS SRX REF ZQCL/ZQCS Refreshing Idle PDE ACT PDX Active powerdown Precharge powerdown Activating PDX CKE L CKE L PDE Bank active WRITE WRITE READ WRITE AP Writing READ READ AP READ WRITE WRITE AP Reading READ AP WRITE AP READ AP PRE, PREA Writing PRE, PREA PRE, PREA Reading Precharging Automatic sequence Command sequence ACT = ACTIVATE MPR = Multipurpose register MRS = Mode register set PDE = Power-down entry PDX = Power-down exit PRE = PRECHARGE 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN PREA = PRECHARGE ALL READ = RD, RDS4, RDS8 READ AP = RDAP, RDAPS4, RDAPS8 REF = REFRESH RESET = START RESET PROCEDURE SRE = Self refresh entry 12 SRX = Self refresh exit WRITE = WR, WRS4, WRS8 WRITE AP = WRAP, WRAPS4, WRAPS8 ZQCL = ZQ LONG CALIBRATION ZQCS = ZQ SHORT CALIBRATION Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Description Functional Description DDR3 SDRAM uses a double data rate architecture to achieve high-speed operation. The double data rate architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write operation for the DDR3 SDRAM effectively consists of a single 8n-bit-wide, four-clockcycle data transfer at the internal DRAM core and eight corresponding n-bit-wide, onehalf-clock-cycle data transfers at the I/O pins. The differential data strobe (DQS, DQS#) is transmitted externally, along with data, for use in data capture at the DDR3 SDRAM input receiver. DQS is center-aligned with data for WRITEs. The read data is transmitted by the DDR3 SDRAM and edge-aligned to the data strobes. The DDR3 SDRAM operates from a differential clock (CK and CK#). The crossing of CK going HIGH and CK# going LOW is referred to as the positive edge of CK. Control, command, and address signals are registered at every positive edge of CK. Input data is registered on the first rising edge of DQS after the WRITE preamble, and output data is referenced on the first rising edge of DQS after the READ preamble. Read and write accesses to the DDR3 SDRAM are burst-oriented. Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVATE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVATE command are used to select the bank and row to be accessed. The address bits registered coincident with the READ or WRITE commands are used to select the bank and the starting column location for the burst access. The device uses a READ and WRITE BL8 and BC4. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard DDR SDRAM, the pipelined, multibank architecture of DDR3 SDRAM allows for concurrent operation, thereby providing high bandwidth by hiding row precharge and activation time. A self refresh mode is provided, along with a power-saving, power-down mode. Industrial Temperature The industrial temperature (IT) device requires that the case temperature not exceed -40C or 95C. JEDEC specifications require the refresh rate to double when T C exceeds 85C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0C or >95C. Automotive Temperature The Automotive temperature (AT) device requires that the case temperature not exceed -40C or 105C. Micron specification requires the refresh rate to 4X when T C exceeds 95C; this also requires use of the high-temperature self refresh option. Additionally, ODT resistance and the input/output impedance must be derated when T C is < 0C or >95C. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Description General Notes * The functionality and the timing specifications discussed in this data sheet are for the DLL enable mode of operation (normal operation). * Throughout this data sheet, various figures and text refer to DQs as "DQ." DQ is to be interpreted as any and all DQ collectively, unless specifically stated otherwise. * The terms "DQS" and "CK" found throughout this data sheet are to be interpreted as DQS, DQS# and CK, CK# respectively, unless specifically stated otherwise. * Complete functionality may be described throughout the document; any page or diagram may have been simplified to convey a topic and may not be inclusive of all requirements. * Any specific requirement takes precedence over a general statement. * Any functionality not specifically stated is considered undefined, illegal, and not supported, and can result in unknown operation. * Row addressing is denoted as A[n:0]. For example, 1Gb: n = 12 (x16); 1Gb: n = 13 (x4, x8); 2Gb: n = 13 (x16) and 2Gb: n = 14 (x4, x8); 4Gb: n = 14 (x16); and 4Gb: n = 15 (x4, x8). * Dynamic ODT has a special use case: when DDR3 devices are architected for use in a single rank memory array, the ODT ball can be wired HIGH rather than routed. Refer to the Dynamic ODT Special Use Case section. * A x16 device's DQ bus is comprised of two bytes. If only one of the bytes needs to be used, use the lower byte for data transfers and terminate the upper byte as noted: - - - - Connect UDQS to ground via 1k* resistor. Connect UDQS# to V DD via 1k* resistor. Connect UDM to V DD via 1k* resistor. Connect DQ[15:8] individually to either V SS, V DD, or V REF via 1k resistors,* or float DQ[15:8]. *If ODT is used, 1k resistor should be changed to 4x that of the selected ODT. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Block Diagrams Functional Block Diagrams DDR3 SDRAM is a high-speed, CMOS dynamic random access memory. It is internally configured as an 8-bank DRAM. Figure 3: 1 Gig x 4 Functional Block Diagram ODT control ODT ZQ RZQ ZQCL, ZQCS CKE VSSQ To pull-up/pull-down networks ZQ CAL RESET# Control logic A12 CK, CK# VDDQ/2 BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 19 Columns 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 16 16 Bank 0 rowaddress latch and decoder 65,536 DLL (1 . . . 4) Bank 0 memory array (65,536 x 256 x 32) 32 READ FIFO and data MUX 4 DQ[3:0] READ drivers BC4 RTT,nom 8,192 BC4 OTF A[15:0] BA[2:0] 19 Address register 3 sw1 sw2 DM (1, 2) Columnaddress counter/ latch DQS, DQS# VDDQ/2 32 Data interface Column decoder 4 Data WRITE drivers and input logic 8 RTT,nom sw1 RTT(WR) sw2 DM 3 Columns 0, 1, and 2 CK, CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN RTT(WR) Bank control logic 256 (x32) 11 DQ[3:0] DQS, DQS# VDDQ/2 32 I/O gating DM mask logic sw2 sw1 Sense amplifiers 3 RTT(WR) CK, CK# 16 Rowaddress MUX RTT,nom 15 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Functional Block Diagrams Figure 4: 512 Meg x 8 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter CK, CK# sw1 (1 . . . 8) 19 Bank 0 Memory array (65,536 x 128 x 64) Bank 0 rowaddress 65,536 latch and decoder 16 16 Sense amplifiers sw2 DLL 16 Rowaddress MUX 64 DQ8 READ FIFO and data MUX 8 19 Address register DQ[7:0] DQS, DQS# VDDQ/2 64 BC4 OTF RTT,nom sw1 RTT(WR) sw2 I/O gating DM mask logic 3 A[15:0] BA[2:0] TDQS# DQ[7:0] Read drivers BC4 8,192 RTT(WR) RTT,nom Columns 0, 1, and 2 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 (1, 2) Bank control logic 3 VDDQ/2 (128 x64) 64 8 Data interface Data Column decoder Columnaddress counter/ latch 10 DQS/DQS# Write drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 DM/TDQS (shared pin) 3 Columns 0, 1, and 2 CK, CK# Column 2 (select upper or lower nibble for BC4) Figure 5: 256 Meg x 16 Functional Block Diagram ODT control ODT ZQ RZQ Control logic CKE VSSQ To ODT/output drivers ZQ CAL RESET# ZQCL, ZQCS A12 VDDQ/2 CK, CK# BC4 (burst chop) Command decode CS# RAS# CAS# WE# Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 OTF Mode registers Refresh counter 18 Bank 7 Bank 6 Bank 5 Bank 4 Bank 3 Bank 2 Bank 1 15 15 Bank 0 rowaddress latch and decoder 32,768 DLL (1 . . . 16) 128 READ FIFO and data MUX 16 DQ[15:0] READ drivers LDQS, LDQS#, UDQS, UDQS# BC4 128 18 Address register 3 sw2 LDQS, LDQS# Bank control logic (1 . . . 4) Columnaddress counter/ latch UDQS, UDQS# VDDQ/2 128 Data interface Column decoder 16 Data WRITE drivers and input logic RTT,nom sw1 RTT(WR) sw2 7 (1, 2) LDM/UDM 3 Columns 0, 1, and 2 CK, CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN RTT(WR) I/O gating DM mask logic (128 x128) 10 RTT,nom sw1 BC4 OTF 3 DQ[15:0] VDDQ/2 Sense amplifiers A[14:0] BA[2:0] sw2 sw1 Bank 0 memory array (32,768 x 128 x 128) 16,384 RTT(WR) CK, CK# 13 Rowaddress MUX RTT,nom Column 0, 1, and 2 16 Column 2 (select upper or lower nibble for BC4) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Ball Assignments and Descriptions Figure 6: 78-Ball FBGA - x4, x8 (Top View) 1 2 3 VSS VDD VSS VDDQ 4 5 6 7 8 9 NC NF, NF/TDQS# VSS VDD VSSQ DQ0 DM, DM/TDQS VSSQ VDDQ DQ2 DQS DQ1 DQ3 VSSQ NF, DQ6 DQS# VDD VSS VSSQ A B C D VSSQ E VREFDQ NF, DQ7 NF, DQ5 VDDQ NF, DQ4 VDDQ F NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 A15 VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS G H J K L M N Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Ball descriptions listed in Table 3 (page 19) are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Figure 7: 96-Ball FBGA - x16 (Top View) 1 2 3 VDDQ DQ13 VSSQ 4 5 6 7 8 9 DQ15 DQ12 VDDQ VSS VDD VSS UDQS# DQ14 VSSQ VDDQ DQ11 DQ9 UDQS DQ10 VDDQ VSSQ VDDQ UDM DQ8 VSSQ VDD VSS VSSQ DQ0 LDM VSSQ VDDQ VDDQ DQ2 LDQS DQ1 DQ3 VSSQ VSSQ DQ6 LDQS# VDD VSS VSSQ VREFDQ VDDQ DQ4 DQ7 DQ5 VDDQ NC VSS RAS# CK VSS NC ODT VDD CAS# CK# VDD CKE NC CS# WE# A10/AP ZQ NC VSS BA0 BA2 NC VREFCA VSS VDD A3 A0 A12/BC# BA1 VDD VSS A5 A2 A1 A4 VSS VDD A7 A9 A11 A6 VDD VSS RESET# A13 A14 A8 VSS A B C D E F G H J K L M N P R T Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Ball descriptions listed in Table 4 (page 21) are listed as "x4, x8" if unique; otherwise, x4 and x8 are the same. 2. A comma separates the configuration; a slash defines a selectable function. Example D7 = NF, NF/TDQS#. NF applies to the x4 configuration only. NF/TDQS# applies to the x8 configuration only--selectable between NF or TDQS# via MRS (symbols are defined in Table 3). 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions Symbol Type Description A[15:13], A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 118). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/ disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle), or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. DM Input Input data mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH along with the input data during a write access. Although the DM ball is input-only, the DM loading is designed to match that of the DQ and DQS balls. DM is referenced to VREFDQ. DM has an optional use as TDQS on the x8. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[7:0], DQS, DQS#, and DM for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDD and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 3: 78-Ball FBGA - x4, x8 Ball Descriptions (Continued) Symbol Type DQ[3:0] I/O Data input/output: Bidirectional data bus for the x4 configuration. DQ[3:0] are referenced to VREFDQ. DQ[7:0] I/O Data input/output: Bidirectional data bus for the x8 configuration. DQ[7:0] are referenced to VREFDQ. DQS, DQS# I/O Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. TDQS, TDQS# Output Termination data strobe: Applies to the x8 configuration only. When TDQS is enabled, DM is disabled, and the TDQS and TDQS# balls provide termination resistance. VDD Supply Power supply: 1.5V 0.075V. VDDQ Supply DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC - No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). NF - No function: When configured as a x4 device, these balls are NF. When configured as a x8 device, these balls are defined as TDQS#, DQ[7:4]. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Description External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA - x16 Ball Descriptions Symbol Type Description A[14:13], A12/BC#, A11, A10/AP, A[9:0] Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to VREFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 70 (page 118). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or active power-down (row active in any bank). CKE is synchronous for powerdown entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF REFRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM for the x16; DQ0[7:0], DQS, DQS#, DM/TDQS, and NF/TDQS# (when TDQS is enabled) for the x8; DQ[3:0], DQS, DQS#, and DM for the x4. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH 0.8 x VDD and DC LOW 0.2 x VDDQ. RESET# assertion and desertion are asynchronous. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Ball Assignments and Descriptions Table 4: 96-Ball FBGA - x16 Ball Descriptions (Continued) Symbol Type UDM Input DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ. LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. VDD Supply Power supply: 1.5V 0.075V. VDDQ Supply DQ power supply: 1.5V 0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference NC - 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Description Input data mask: UDM is an upper-byte, input mask signal for write data. Upperbyte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. External reference ball for output drive calibration: This ball is tied to an external 240 resistor (RZQ), which is tied to VSSQ. No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Package Dimensions Figure 8: 78-Ball FBGA - x4, x8 (RH) 0.155 Seating plane A 78X O0.45 Dimensions apply to solder balls postreflow on O0.35 SMD ball pads. 0.12 A 1.8 CTR Nonconductive overmold Ball A1 ID (covered by SR) 9 8 7 3 2 Ball A1 ID 1 A B C D E F 10.5 0.1 G 9.6 CTR H J K L M N 0.8 TYP 0.8 TYP 1.1 0.1 6.4 CTR 0.25 MIN 9 0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 9: 78-Ball FBGA - x4, x8 (RG) 0.155 Seating plane A 0.12 A 1.8 CTR nonconductive overmold 78X O0.47 Dimensions apply to solder balls postreflow on O0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 10.6 0.1 9.6 CTR 0.8 TYP 1.1 0.1 0.8 TYP 6.4 CTR 0.25 MIN 7.5 0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 10: 78-Ball FBGA - x4, x8 (DA) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 78X O0.47 Dimensions apply to solder balls postreflow on O0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N 10.5 0.1 9.6 CTR 0.8 TYP 1.1 0.1 0.8 TYP 6.4 CTR 0.29 MIN 8 0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 11: 96-Ball FBGA - x16 (HA) 0.155 Seating plane 1.8 CTR Nonconductive overmold 96X O0.45 Dimensions apply to solder balls post-reflow on O0.35 SMD ball pads. 9 8 7 3 A 2 0.12 A Ball A1 Index (covered by SR) 1 Ball A1 Index A B C D E F G H 12 CTR J 14 0.1 K L M N P R 0.8 TYP T 0.8 TYP 1.1 0.1 6.4 CTR 0.25 MIN 9 0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC305 (96.5% Sn, 3% Ag, 0.5% Cu). 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 12: 96-Ball FBGA - x16 (LY) 0.155 Seating plane A 0.12 A 1.8 CTR Nonconductive overmold 96X O0.47 Dimensions apply to solder balls postreflow on O0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 13.5 0.1 12 CTR 0.8 TYP 1.1 0.1 0.8 TYP 6.4 CTR 0.29 MIN 7.5 0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Solder ball material: SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Package Dimensions Figure 13: 96-Ball FBGA - x16 (TW) 0.155 Seating plane 0.12 A A 1.8 CTR Nonconductive overmold 96X O0.47 Dimensions apply to solder balls postreflow on O0.42 SMD ball pads. Ball A1 ID (covered by SR) 9 8 7 Ball A1 ID 3 2 1 A B C D E F G H J K L M N P R T 14 0.1 12 CTR 0.8 TYP 1.1 0.1 0.8 TYP 6.4 CTR 0.34 0.05 8 0.1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. All dimensions are in millimeters. 2. Material composition: Pb-free SAC302 (96.8% Sn, 3% Ag, 0.2% Cu). 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications Electrical Specifications Absolute Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. Table 5: Absolute Maximum Ratings Symbol Parameter Min Max Unit Notes 1 VDD VDD supply voltage relative to VSS -0.4 1.975 V VDDQ VDD supply voltage relative to VSSQ -0.4 1.975 V VIN, VOUT Voltage on any pin relative to VSS -0.4 1.975 V 0 95 C 2, 3 Operating case temperature - Industrial -40 95 C 2, 3 Operating case temperature - Automotive -40 105 C 2, 3 Storage temperature -55 150 C TC TSTG Operating case temperature - Commercial Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. VDD and VDDQ must be within 300mV of each other at all times, and VREF must not be greater than 0.6 x VDDQ. When VDD and VDDQ are <500mV, VREF can be 300mV. 2. MAX operating case temperature. TC is measured in the center of the package. 3. Device functionality is not guaranteed if the DRAM device exceeds the maximum TC during operation. 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications Input/Output Capacitance Table 6: DDR3L Input/Output Capacitance Note 1 applies to the entire table DDR3L -800 Capacitance DDR3L -1066 DDR3L -1333 DDR3L -1600 DDR3L -1866 DDR3L -2133 Parameters Sym Min Max Min Max Min Max Min Max Min Max Min CK and CK# CCK 0.8 1.6 0.8 1.6 0.8 1.4 0.8 1.4 0.8 1.3 0.8 1.3 pF C: CK to CK# CDCK 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 pF CIO 1.4 2.5 1.4 2.5 1.4 2.3 1.4 2.2 1.4 2.1 1.4 2.1 pF Single-end I/O: DQ, DM Differential I/O: DQS, DQS#, TDQS, TDQS# CIO C: DQS to DQS#, TDQS, TDQS# CDDQS C: DQ to DQS Max Unit Notes 2 3 CDIO Inputs (CTRL, CMD, ADDR) CI C: CTRL to CK CDI_CTRL C: CMD_ADDR to CK CDI_CMD ZQ pin capacitance CZQ Reset pin capacitance CRE 1.4 2.5 1.4 2.5 1.4 2.3 1.4 2.2 1.4 2.1 1.4 2.1 0.0 0.2 0.0 0.2 0.0 0.15 0.0 0.15 0.0 0.15 0.0 0.15 pF 3 pF -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 -0.5 0.3 0.75 1.3 0.75 1.3 0.75 1.3 0.75 1.2 0.75 1.2 0.75 1.2 -0.5 0.3 -0.5 0.3 -0.4 0.2 -0.4 0.2 -0.4 0.2 -0.4 0.2 -0.5 0.5 -0.5 0.5 -0.4 0.4 -0.4 0.4 -0.4 0.4 -0.4 0.4 pF pF pF 4 5 6 7 pF _ADDR - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 - 3.0 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN pF pF 1. VDD = 1.35V (1.283-1.45V), VDDQ = VDD, VREF = VSS, f = 100 MHz, TC = 25C. VOUT(DC) = 0.5 x VDDQ, VOUT = 0.1V (peak-to-peak). 2. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. 3. Includes TDQS, TDQS#. CDDQS is for DQS vs. DQS# and TDQS vs. TDQS# separately. 4. CDIO = CIO(DQ) - 0.5 x (CIO(DQS) + CIO(DQS#)). 5. Excludes CK, CK#; CTRL = ODT, CS#, and CKE; CMD = RAS#, CAS#, and WE#; ADDR = A[n:0], BA[2:0]. 6. CDI_CTRL = CI(CTRL) - 0.5 x (CCK(CK) + CCK(CK#)). 7. CDI_CMD_ADDR = CI(CMD_ADDR) - 0.5 x (CCK(CK) + CCK(CK#)). 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Thermal Characteristics Thermal Characteristics Table 7: Thermal Characteristics Notes 1-3 apply to entire table Parameter Symbol Value Units Notes Operating temperature - Commercial TC 0 to 85 C Operating temperature - Industrial TC -40 to 95 C 4 Operating temperature - Automotive TC -40 to105 C 5 1. MAX operating case temperature TC is measured in the center of the package, as shown below. 2. A thermal solution must be designed to ensure that the device does not exceed the maximum TC during operation. 3. Device functionality is not guaranteed if the device exceeds maximum TC during operation. 4. If TC exceeds 85C, but is less than 95C, the DRAM must be refreshed manually at 2x refresh, which is a 3.9s interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh (ASR), must be enabled. 5. If TC exceeds 95C, but less than 105C, the DRAM must be refreshed manually at 4x refresh, which is a 1.95s interval refresh rate. The use of self refresh temperature (SRT) or automatic self refresh (ASR), must be enabled. Notes: Figure 14: Thermal Measurement Point (L/2) Tc test point L (W/2) W 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Thermal Characteristics Table 8: Thermal Impedance Die Rev. Package 78-ball E 96-ball 78-ball N 96-ball 78-ball P 96-ball JA (C/W) Airflow = 0m/s JA (C/W) Airflow = 1m/s JA (C/W) Airflow = 2m/s JB (C/W) JC (C/W) Low conductivity 63.7 49.6 44.0 N/A 4.0 High conductivity 42.3 35.7 32.9 29.7 N/A Low conductivity 50.4 39.2 35.1 N/A 3.9 High conductivity 31.3 26.1 24.3 19.2 N/A Low conductivity 61.7 47.6 42.6 N/A 5.7 High conductivity 40.6 33.4 31.2 19.1 N/A Low conductivity 52.1 42.1 38.4 N/A 5.6 High conductivity 32.6 27.9 26.5 12.6 N/A Low conductivity 88.3 70.6 64.1 N/A 10.8 High conductivity 56.5 48.4 45.7 25.5 N/A Low conductivity 54.3 42.1 37.3 N/A 4.6 High conductivity 34.8 29.0 26.9 16.9 N/A Substrate Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Thermal resistance data is based on a number of samples from multiple lots and should be viewed as a typical number. 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions Electrical Specifications - IDD Specifications and Conditions Within the following IDD measurement tables, the following definitions and conditions are used, unless stated otherwise: LOW: V IN V IL(AC)max; HIGH: V IN V IH(AC)min. Midlevel: Inputs are V REF = V DD/2. RON set to RZQ/7 (34). RTT,nom set to RZQ/6 (40). RTT(WR) set to RZQ/2 (120). QOFF is enabled in MR1. ODT is enabled in MR1 (RTT,nom) and MR2 (RTT(WR)). TDQS is disabled in MR1. External DQ/DQS/DM load resistor is 25 to V DDQ/2. Burst lengths are BL8 fixed. AL equals 0 (except in IDD7). IDD specifications are tested after the device is properly initialized. Input slew rate is specified by AC parametric test conditions. Optional ASR is disabled. Read burst type uses nibble sequential (MR0[3] = 0). Loop patterns must be executed at least once before current measurements begin. * * * * * * * * * * * * * * * * Table 9: Timing Parameters Used for IDD Measurements - Clock Units DDR3L -800 IDD Parameter tCK DDR3L -1066 DDR3L -1333 -25E -25 -187E -187 -15E 5-5-5 6-6-6 7-7-7 8-8-8 9-9-9 (MIN) IDD 2.5 1.875 DDR3L -1600 -15 -125E -125 DDR3L -1866 DDR3L -2133 -107 -093 10-10-10 10-10-10 11-11-11 13-13-13 14-14-14 Unit 1.5 1.25 1.07 0.938 ns CL IDD 5 6 7 8 9 10 10 11 13 14 CK tRCD 5 6 7 8 9 10 10 11 13 14 CK 20 21 27 28 33 34 38 39 45 50 CK 15 15 20 20 24 24 28 28 32 36 CK tRC (MIN) IDD tRAS tRP (MIN) IDD (MIN) IDD (MIN) tFAW tRRD 5 6 7 8 9 10 10 11 13 14 CK x4, x8 16 16 20 20 20 20 24 24 26 27 CK x16 20 20 27 27 30 30 32 32 33 38 CK x4, x8 4 4 4 4 4 4 5 5 5 6 CK IDD x16 4 4 6 6 5 5 6 6 6 7 CK tRFC 1Gb 44 44 59 59 74 74 88 88 103 118 CK 2Gb 64 64 86 86 107 107 128 128 150 172 CK 4Gb 104 104 139 139 174 174 208 208 243 279 CK 8Gb 140 140 187 187 234 234 280 280 328 375 CK 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions 0 0 - 0 0 0 - 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 0 0 - 4 D# 1 1 1 1 0 0 0 0 0 0 0 - Data 0 0 A[2:0] 0 0 A[6:3] 0 0 A[9:7] 0 0 A[10] 0 0 A[15:11] 1 0 BA[2:0] 1 0 ODT 0 1 WE# 0 D CAS# ACT 1 RAS# Command 0 CS# Cycle Number SubLoop CKE CK, CK# Table 10: IDD0 Measurement Loop Repeat cycles 1 through 4 until nRAS - 1; truncate if needed nRAS Static HIGH Toggling 0 PRE 0 0 1 0 0 0 0 0 0 0 0 - Repeat cycles 1 through 4 until nRC - 1; truncate if needed nRC ACT 0 0 1 1 0 0 0 0 0 F 0 - nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 - D# 1 1 1 1 0 0 0 0 0 F 0 - nRC + 4 Repeat cycles nRC + 1 through nRC + 4 until nRC - 1 + nRAS -1; truncate if needed nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 - Repeat cycles nRC + 1 through nRC + 4 until 2 x RC - 1; truncate if needed 1 2 x nRC Repeat sub-loop 0, use BA[2:0] = 1 2 4 x nRC Repeat sub-loop 0, use BA[2:0] = 2 3 6 x nRC Repeat sub-loop 0, use BA[2:0] = 3 4 8 x nRC Repeat sub-loop 0, use BA[2:0] = 4 5 10 x nRC Repeat sub-loop 0, use BA[2:0] = 5 6 12 x nRC Repeat sub-loop 0, use BA[2:0] = 6 7 14 x nRC Repeat sub-loop 0, use BA[2:0] = 7 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 3. Only selected bank (single) active. 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions 0 0 0 - 0 0 0 0 - 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 0 0 - 4 D# 1 1 1 1 0 0 0 0 0 0 0 - Data2 A[2:0] 0 0 A[6:3] 0 0 A[9:7] 0 0 A[10] 0 0 A[15:11] 1 0 BA[2:0] 1 0 ODT 0 1 WE# 0 D CAS# ACT 1 RAS# Command 0 CS# Cycle Number Sub-Loop CKE CK, CK# Table 11: IDD1 Measurement Loop Repeat cycles 1 through 4 until nRCD - 1; truncate if needed nRCD RD 0 1 0 1 0 0 0 0 0 0 0 00000000 Repeat cycles 1 through 4 until nRAS - 1; truncate if needed nRAS Static HIGH Toggling 0 PRE 0 0 1 0 0 0 0 0 0 0 0 - Repeat cycles 1 through 4 until nRC - 1; truncate if needed nRC ACT 0 0 1 1 0 0 0 0 0 F 0 - nRC + 1 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 2 D 1 0 0 0 0 0 0 0 0 F 0 - nRC + 3 D# 1 1 1 1 0 0 0 0 0 F 0 - nRC + 4 D# 1 1 1 1 0 0 0 0 0 F 0 - Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1; truncate if needed nRC + nRCD RD 0 1 0 1 0 0 0 0 0 F 0 00110011 Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1; truncate if needed nRC + nRAS PRE 0 0 1 0 0 0 0 0 0 F 0 - Repeat cycle nRC + 1 through nRC + 4 until 2 x nRC - 1; truncate if needed 1 2 x nRC Repeat sub-loop 0, use BA[2:0] = 1 2 4 x nRC Repeat sub-loop 0, use BA[2:0] = 2 3 6 x nRC Repeat sub-loop 0, use BA[2:0] = 3 4 8 x nRC Repeat sub-loop 0, use BA[2:0] = 4 5 10 x nRC Repeat sub-loop 0, use BA[2:0] = 5 6 12 x nRC Repeat sub-loop 0, use BA[2:0] = 6 7 14 x nRC Repeat sub-loop 0, use BA[2:0] = 7 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. 2. 3. 4. DQ, DQS, DQS# are midlevel unless driven as required by the RD command. DM is LOW. Burst sequence is driven on each DQ signal by the RD command. Only selected bank (single) active. 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions Table 12: IDD Measurement Conditions for Power-Down Currents Name IDD2P0 Precharge Power-Down Current (Slow Exit)1 IDD2P1 Precharge Power-Down Current (Fast Exit)1 IDD2Q Precharge Quiet Standby Current IDD3P Active Power-Down Current N/A N/A N/A N/A Timing pattern CKE External clock tCK LOW LOW HIGH LOW Toggling Toggling Toggling Toggling tCK tRC (MIN) IDD N/A tCK (MIN) IDD N/A tCK (MIN) IDD N/A tCK (MIN) IDD N/A tRAS N/A N/A N/A N/A tRCD N/A N/A N/A N/A tRRD N/A N/A N/A N/A tRC N/A N/A N/A N/A CL N/A N/A N/A N/A AL N/A N/A N/A N/A CS# HIGH HIGH HIGH HIGH Command inputs LOW LOW LOW LOW Row/column addr LOW LOW LOW LOW Bank addresses LOW LOW LOW LOW DM LOW LOW LOW LOW Midlevel Midlevel Midlevel Midlevel Data I/O Output buffer DQ, DQS Enabled Enabled Enabled Enabled Enabled, off Enabled, off Enabled, off Enabled, off Burst length 8 8 8 8 Active banks None None None All ODT2 Idle banks All All All None Special notes N/A N/A N/A N/A Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. MR0[12] defines DLL on/off behavior during precharge power-down only; DLL on (fast exit, MR0[12] = 1) and DLL off (slow exit, MR0[12] = 0). 2. "Enabled, off" means the MR bits are enabled, but the signal is LOW. 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions Static HIGH Toggling Command CS# RAS# CAS# WE# ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data 0 Cycle Number Sub-Loop CKE CK, CK# Table 13: IDD2N and IDD3N Measurement Loop 0 D 1 0 0 0 0 0 0 0 0 0 0 - 1 D 1 0 0 0 0 0 0 0 0 0 0 - 2 D# 1 1 1 1 0 0 0 0 0 F 0 - 3 D# 1 1 1 1 0 0 0 0 0 F 0 - 1 4-7 Repeat sub-loop 0, use BA[2:0] = 1 2 8-11 Repeat sub-loop 0, use BA[2:0] = 2 3 12-15 Repeat sub-loop 0, use BA[2:0] = 3 4 16-19 Repeat sub-loop 0, use BA[2:0] = 4 5 20-23 Repeat sub-loop 0, use BA[2:0] = 5 6 24-27 Repeat sub-loop 0, use BA[2:0] = 6 7 28-31 Repeat sub-loop 0, use BA[2:0] = 7 Notes: 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 3. All banks closed during IDD2N; all banks open during IDD3N. Static HIGH Toggling Command CS# RAS# CAS# WE# ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data 0 Cycle Number Sub-Loop CKE CK, CK# Table 14: IDD2NT Measurement Loop 0 D 1 0 0 0 0 0 0 0 0 0 0 - 1 D 1 0 0 0 0 0 0 0 0 0 0 - 2 D# 1 1 1 1 0 0 0 0 0 F 0 - 3 D# 1 1 1 1 0 0 0 0 0 F 0 - 1 4-7 Repeat sub-loop 0, use BA[2:0] = 1; ODT = 0 2 8-11 Repeat sub-loop 0, use BA[2:0] = 2; ODT = 1 3 12-15 Repeat sub-loop 0, use BA[2:0] = 3; ODT = 1 4 16-19 Repeat sub-loop 0, use BA[2:0] = 4; ODT = 0 5 20-23 Repeat sub-loop 0, use BA[2:0] = 5; ODT = 0 6 24-27 Repeat sub-loop 0, use BA[2:0] = 6; ODT = 1 7 28-31 Repeat sub-loop 0, use BA[2:0] = 7; ODT = 1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 3. All banks closed. 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions A[2:0] Data3 0 0 0 0 0 0 0 00000000 0 0 0 0 0 0 0 0 - 2 D# 1 1 1 1 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 0 0 - 4 RD 0 1 0 1 0 0 0 0 0 F 0 00110011 5 D 1 0 0 0 0 0 0 0 0 F 0 - 6 D# 1 1 1 1 0 0 0 0 0 F 0 - 7 D# 1 1 1 1 0 0 0 0 0 F 0 - 1 8-15 Repeat sub-loop 0, use BA[2:0] = 1 2 16-23 Repeat sub-loop 0, use BA[2:0] = 2 3 24-31 Repeat sub-loop 0, use BA[2:0] = 3 4 32-39 Repeat sub-loop 0, use BA[2:0] = 4 5 40-47 Repeat sub-loop 0, use BA[2:0] = 5 6 48-55 Repeat sub-loop 0, use BA[2:0] = 6 7 56-63 Repeat sub-loop 0, use BA[2:0] = 7 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. 2. 3. 4. A[6:3] 1 0 A[9:7] 0 0 A[10] 1 1 A[15:11] CAS# 0 D BA[2:0] RAS# RD 1 ODT CS# 0 WE# Command Static HIGH Toggling 0 Cycle Number Sub-Loop CKE CK, CK# Table 15: IDD4R Measurement Loop DQ, DQS, DQS# are midlevel when not driving in burst sequence. DM is LOW. Burst sequence is driven on each DQ signal by the RD command. All banks open. 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions A[2:0] Data4 1 0 0 0 0 0 0 00000000 0 1 0 0 0 0 0 0 - 2 D# 1 1 1 1 1 0 0 0 0 0 0 - 3 D# 1 1 1 1 1 0 0 0 0 0 0 - 4 WR 0 1 0 0 1 0 0 0 0 F 0 00110011 5 D 1 0 0 0 1 0 0 0 0 F 0 - 6 D# 1 1 1 1 1 0 0 0 0 F 0 - 7 D# 1 1 1 1 1 0 0 0 0 F 0 - 1 8-15 Repeat sub-loop 0, use BA[2:0] = 1 2 16-23 Repeat sub-loop 0, use BA[2:0] = 2 3 24-31 Repeat sub-loop 0, use BA[2:0] = 3 4 32-39 Repeat sub-loop 0, use BA[2:0] = 4 5 40-47 Repeat sub-loop 0, use BA[2:0] = 5 6 48-55 Repeat sub-loop 0, use BA[2:0] = 6 7 56-63 Repeat sub-loop 0, use BA[2:0] = 7 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. 2. 3. 4. A[6:3] 0 0 A[9:7] 0 0 A[10] 1 1 A[15:11] CAS# 0 D BA[2:0] RAS# WR 1 ODT CS# 0 WE# Command Static HIGH Toggling 0 Cycle Number Sub-Loop CKE CK, CK# Table 16: IDD4W Measurement Loop DQ, DQS, DQS# are midlevel when not driving in burst sequence. DM is LOW. Burst sequence is driven on each DQ signal by the WR command. All banks open. 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions 0 0 0 - 0 0 0 0 - 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 D# 1 1 1 1 0 0 0 0 0 F 0 - 4 D# 1 1 1 1 0 0 0 0 0 F 0 - Static HIGH Toggling 1a 1b 5-8 Repeat sub-loop 1a, use BA[2:0] = 1 1c 9-12 Repeat sub-loop 1a, use BA[2:0] = 2 1d 13-16 Repeat sub-loop 1a, use BA[2:0] = 3 1e 17-20 Repeat sub-loop 1a, use BA[2:0] = 4 1f 21-24 Repeat sub-loop 1a, use BA[2:0] = 5 1g 25-28 Repeat sub-loop 1a, use BA[2:0] = 6 1h 29-32 Repeat sub-loop 1a, use BA[2:0] = 7 2 33-nRFC - 1 Repeat sub-loop 1a through 1h until nRFC - 1; truncate if needed Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Data 0 0 A[2:0] 0 0 A[6:3] 0 0 A[9:7] 0 0 A[10] 1 0 A[15:11] 0 0 BA[2:0] 0 1 ODT 0 D WE# REF 1 CAS# Command 0 RAS# Cycle Number 0 CS# Sub-Loop CKE CK, CK# Table 17: IDD5B Measurement Loop 1. DQ, DQS, DQS# are midlevel. 2. DM is LOW. 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions Table 18: IDD Measurement Conditions for IDD6, IDD6ET, and IDD8 IDD Test CKE External clock IDD6: Self Refresh Current Normal Temperature Range TC = 0C to +85C IDD6ET: Self Refresh Current Extended Temperature Range TC = 0C to +95C IDD8: Reset2 LOW LOW Midlevel Off, CK and CK# = LOW Off, CK and CK# = LOW Midlevel tCK N/A N/A N/A tRC N/A N/A N/A tRAS N/A N/A N/A tRCD N/A N/A N/A tRRD N/A N/A N/A tRC N/A N/A N/A CL N/A N/A N/A AL N/A N/A N/A CS# Midlevel Midlevel Midlevel Command inputs Midlevel Midlevel Midlevel Row/column addresses Midlevel Midlevel Midlevel Bank addresses Midlevel Midlevel Midlevel Data I/O Midlevel Midlevel Midlevel Output buffer DQ, DQS Enabled Enabled Midlevel Enabled, midlevel Enabled, midlevel Midlevel Burst length N/A N/A N/A Active banks N/A N/A None Idle banks N/A N/A All SRT Disabled (normal) Enabled (extended) N/A ASR Disabled Disabled N/A ODT1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. "Enabled, midlevel" means the MR command is enabled, but the signal is midlevel. 2. During a cold boot RESET (initialization), current reading is valid after power is stable and RESET has been LOW for 1ms; During a warm boot RESET (while operating), current reading is valid after RESET has been LOW for 200ns + tRFC. 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions Command CS# RAS# CAS# WE# ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data3 0 Cycle Number Sub-Loop CKE CK, CK# Table 19: IDD7 Measurement Loop 0 ACT 0 0 1 1 0 0 0 0 0 0 0 - 1 RDA 0 1 0 1 0 0 0 1 0 0 0 00000000 2 D 1 0 0 0 0 0 0 0 0 0 0 - 3 1 Static HIGH nRRD ACT 0 0 1 1 0 1 0 0 0 F 0 - nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 F 0 00110011 nRRD + 2 D 1 0 0 0 0 1 0 0 0 F 0 - 0 - nRRD + 3 Repeat cycle nRRD + 2 until 2 x nRRD - 1 2 2 x nRRD Repeat sub-loop 0, use BA[2:0] = 2 3 3 x nRRD Repeat sub-loop 1, use BA[2:0] = 3 4 x nRRD 4 Toggling Repeat cycle 2 until nRRD - 1 D 1 0 0 0 0 3 0 0 0 F 4 x nRRD + 1 Repeat cycle 4 x nRRD until nFAW - 1, if needed 5 nFAW Repeat sub-loop 0, use BA[2:0] = 4 6 nFAW + nRRD Repeat sub-loop 1, use BA[2:0] = 5 7 nFAW + 2 x nRRD Repeat sub-loop 0, use BA[2:0] = 6 8 nFAW + 3 x nRRD Repeat sub-loop 1, use BA[2:0] = 7 nFAW + 4 x nRRD 9 D 1 nFAW + 4 x nRRD + 1 10 0 0 0 7 0 0 0 F 0 - Repeat cycle nFAW + 4 x nRRD until 2 x nFAW - 1, if needed 2 x nFAW ACT 0 0 1 1 0 0 0 0 0 F 0 - 2 x nFAW + 1 RDA 0 1 0 1 0 0 0 1 0 F 0 00110011 2 x nFAW + 2 D 1 0 0 0 0 0 0 0 0 F 0 - 2 x nFAW + 3 11 0 Repeat cycle 2 x nFAW + 2 until 2 x nFAW + nRRD - 1 2 x nFAW + nRRD ACT 0 0 1 1 0 1 0 0 0 0 0 - 2 x nFAW + nRRD + 1 RDA 0 1 0 1 0 1 0 1 0 0 0 00000000 2 x nFAW + nRRD + 2 D 1 0 0 0 0 1 0 0 0 0 0 - 2 x nFAW + nRRD + 3 Repeat cycle 2 x nFAW + nRRD + 2 until 2 x nFAW + 2 x nRRD - 1 12 2 x nFAW + 2 x nRRD Repeat sub-loop 10, use BA[2:0] = 2 13 2 x nFAW + 3 x nRRD Repeat sub-loop 11, use BA[2:0] = 3 14 2 x nFAW + 4 x nRRD D 1 0 0 0 0 3 0 0 0 0 0 2 x nFAW + 4 x nRRD + 1 Repeat cycle 2 x nFAW + 4 x nRRD until 3 x nFAW - 1, if needed 3 x nFAW Repeat sub-loop 10, use BA[2:0] = 4 15 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 42 - Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - IDD Specifications and Conditions 3 x nFAW + 4 x nRRD + 1 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. 2. 3. 4. A[6:3] A[9:7] A[10] Data3 19 3 x nFAW + 3 x nRRD 3 x nFAW + 4 x nRRD A[2:0] 18 A[15:11] Repeat sub-loop 10, use BA[2:0] = 6 BA[2:0] 3 x nFAW + 2 x nRRD ODT 17 WE# Repeat sub-loop 11, use BA[2:0] = 5 CAS# 3 x nFAW + nRRD RAS# 16 CS# Cycle Number Command Sub-Loop CKE Static HIGH Toggling CK, CK# Table 19: IDD7 Measurement Loop (Continued) 0 - Repeat sub-loop 11, use BA[2:0] = 7 D 1 0 0 0 0 7 0 0 0 0 Repeat cycle 3 x nFAW + 4 x nRRD until 4 x nFAW - 1, if needed DQ, DQS, DQS# are midlevel unless driven as required by the RD command. DM is LOW. Burst sequence is driven on each DQ signal by the RD command. AL = CL-1. 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics - Operating IDD Specifications Electrical Characteristics - Operating IDD Specifications Table 20: IDD Maximum Limits Die Rev. E for 1.35/1.5V Operation Speed Bin Symbol Width DDR3/3L -1066 Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 x4, x8 44 47 55 62 mA 1, 2 x16 55 58 66 73 mA 1, 2 Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 x4 53 57 61 65 mA 1, 2 x8 59 62 66 70 mA 1, 2 Parameter DDR3/3L -1333 DDR3/3L -1600 DDR3/3L -1866 Units Notes x16 80 84 87 91 mA 1, 2 Precharge power-down current: Slow exit IDD2P0 All 18 18 18 18 mA 1, 2 Precharge power-down current: Fast exit IDD2P1 All 26 28 32 37 mA 1, 2 Precharge quiet standby current IDD2Q All 27 28 32 35 mA 1, 2 Precharge standby current IDD2N All 28 29 32 35 mA 1, 2 Precharge standby ODT current IDD2NT x4, x8 32 35 39 42 mA 1, 2 x16 35 39 42 45 mA 1, 2 Active power-down current IDD3P All 32 35 38 41 mA 1, 2 Active standby current IDD3N x4, x8 32 35 38 41 mA 1, 2 x16 41 45 47 49 mA 1, 2 x4 113 130 147 164 mA 1, 2 x8 123 140 157 174 mA 1, 2 x16 185 202 235 252 mA 1, 2 x4 87 103 118 133 mA 1, 2 x8 95 110 125 141 mA 1, 2 x16 137 152 171 190 mA 1, 2 Burst read operating current IDD4R Burst write operating current IDD4W Burst refresh current IDD5B All 224 228 235 242 mA 1, 2 Room temperature self refresh IDD6 All 20 20 20 20 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 25 25 25 25 mA 2, 4 All banks interleaved read current IDD7 x4, x8 160 190 220 251 mA 1, 2 Reset current IDD8 Notes: 1. 2. 3. 4. 5. x16 198 217 243 274 mA 1, 2 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA mA 1, 2 TC = 85C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85C. TC = 85C; ASR and ODT are disabled; SRT is enabled. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0C TC +85C: 5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics - Operating IDD Specifications 5b. When TC > 85C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. Table 21: IDD Maximum Limits Die Rev. N for 1.35V/1.5V Operation Speed Bin Parameter DDR3/3L DDR3/3L DDR3/3L DDR3/3L DDR3/3L Units Notes -1066 -1333 -1600 -1866 -2133 Symbol Width Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 x4, x8 42 45 47 49 51 mA 1, 2 x16 52 55 57 59 61 mA 1, 2 x4 50 53 56 59 62 mA 1, 2 x8 55 58 61 64 67 mA 1, 2 x16 75 78 81 84 87 mA 1, 2 Precharge power-down current: Slow exit IDD2P0 All 8 8 8 8 8 mA 1, 2 Precharge power-down current: Fast exit IDD2P1 All 10 12 14 16 18 mA 1, 2 Precharge quiet standby current IDD2Q All 20 22 24 26 28 mA 1, 2 Precharge standby current IDD2N All 20 22 24 26 28 mA 1, 2 Precharge standby ODT current IDD2NT x4, x8 24 26 28 30 32 mA 1, 2 x16 27 29 31 33 35 mA 1, 2 Active power-down current IDD3P All 22 24 26 28 30 mA 1, 2 Active standby current IDD3N x4, x8 26 28 30 32 34 mA 1, 2 x16 34 36 38 40 42 mA 1, 2 x4 65 75 85 95 105 mA 1, 2 x8 75 85 95 105 115 mA 1, 2 x16 135 145 155 165 175 mA 1, 2 x4 65 75 85 95 105 mA 1, 2 x8 75 85 95 105 115 mA 1, 2 x16 135 145 155 165 175 mA 1, 2 Burst read operating current IDD4R Burst write operating current IDD4W Burst refresh current IDD5B All 165 170 175 180 185 mA 1, 2 Room temperature self refresh IDD6 All 12 12 12 12 12 mA 1, 2, 3 Extended temperature self refresh IDD6ET All 16 16 16 16 16 mA All banks interleaved read current IDD7 x4, x8 110 120 130 140 150 mA Reset current IDD8 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. 2. 3. 4. 2, 4 1, 2 x16 170 180 190 200 210 mA 1, 2 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA mA 1, 2 TC = 85C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85C. TC = 85C; ASR and ODT are disabled; SRT is enabled. 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics - Operating IDD Specifications 5. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0C TC 85C: 5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 5b. When TC > 85C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics - Operating IDD Specifications Table 22: IDD Maximum Limits Die Rev. P for 1.35V/1.5V Operation Speed Bin Parameter Symbol Operating current 0: One bank ACTIVATE-to-PRECHARGE IDD0 Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE IDD1 Precharge power-down current: Slow exit IDD2P0 Precharge power-down current: Fast exit IDD2P1 Precharge quiet standby current IDD2Q Precharge standby current IDD2N Precharge standby ODT current IDD2NT Active power-down current IDD3P Active standby current IDD3N Burst read operating current IDD4R Burst write operating current IDD4W Burst refresh current IDD5B Self refresh IDD6 Extended temperature self refresh All banks interleaved read current Reset current IDD6ET IDD7 IDD8 Notes: 1. 2. 3. 4. 5. Width DDR3/3L -1600 DDR3/3L -1866 DDR3/3L -2133 x4, x8 28 29 31 X16 32 32 34 x4, x8 43 44 47 x16 45 46 54 x4, x8 10 11 12 x16 12 12 12 x4, x8 11 11 13 x16 12 12 14 Units Notes mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 mA 1, 2 ALL 15 15 17 x4, x8 16 17 22 x16 17 17 22 x4, x8 20 22 27 x16 22 23 28 x4,x8 15 15 17 x16 17 17 19 x4, x8 20 21 23 x16 22 23 25 x4, x8 90 90 110 x16 110 120 130 x4, x8 90 90 110 16 120 130 140 x4, x8 152 152 160 x16 156 156 160 ALL 15 15 15 mA 1, 2, 3 mA 2, 4 mA 1, 2 mA 1, 2 ALL 23 23 23 x4, x8 130 146 150 x16 132 147 160 All IDD2P + 2mA IDD2P + 2mA IDD2P + 2mA TC = 85C; SRT and ASR are disabled. Enabling ASR could increase IDDx by up to an additional 2mA. Restricted to TC (MAX) = 85C. TC = 85C; ASR and ODT are disabled; SRT is enabled. The IDD values must be derated (increased) on IT-option devices when operated outside of the range 0C TC +85C: 5a. When TC < 0C: IDD2P0, IDD2P1 and IDD3P must be derated by 4%; IDD4R and IDD4W must be derated by 2%; and IDD6, IDD6ET and IDD7 must be derated by 7%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 47 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics - Operating IDD Specifications 5b. When TC > 85C: IDD0, IDD1, IDD2N, IDD2NT, IDD2Q, IDD3N, IDD3P, IDD4R, IDD4W, and IDD5B must be derated by 2%; IDD2Px must be derated by 30%. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Electrical Specifications - DC and AC DC Operating Conditions Table 23: DDR3L 1.35V DC Electrical Characteristics and Operating Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit Notes Supply voltage VDD 1.283 1.35 1.45 V 1-7 I/O supply voltage VDDQ 1.283 1.35 1.45 V 1-7 II -2 - 2 A IVREF -1 - 1 A Input leakage current Any input 0V VIN VDD, VREF pin 0V VIN 1.1V (All other pins not under test = 0V) VREF supply leakage current VREFDQ = VDD/2 or VREFCA = VDD/2 (All other pins not under test = 0V) Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 8, 9 1. VDD and VDDQ must track one another. VDDQ must be VDD. VSS = VSSQ. 2. VDD and VDDQ may include AC noise of 50mV (250 kHz to 20 MHz) in addition to the DC (0 Hz to 250 kHz) specifications. VDD and VDDQ must be at same level for valid AC timing parameters. 3. Maximum DC value may not be greater than 1.425V. The DC value is the linear average of VDD/VDDQ(t) over a very long period of time (for example, 1 second). 4. Under these supply voltages, the device operates to this DDR3L specification. 5. If the maximum limit is exceeded, input levels shall be governed by DDR3 specifications. 6. Under 1.5V operation, this DDR3L device operates in accordance with the DDR3 specifications under the same speed timings as defined for this device. 7. Once initialized for DDR3L operation, DDR3 operation may only be used if the device is in reset while VDD and VDDQ are changed for DDR3 operation (see VDD Voltage Switching (page 139)). 8. The minimum limit requirement is for testing purposes. The leakage current on the VREF pin should be minimal. 9. VREF (see Table 24). 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Input Operating Conditions Table 24: DDR3L 1.35V DC Electrical Characteristics and Input Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Nom Max Unit VIN low; DC/commands/address busses VIL VSS N/A See Table 25 V VIN high; DC/commands/address busses VIH See Table 25 N/A VDD V Notes Input reference voltage command/address bus VREFCA(DC) 0.49 x VDD 0.5 x VDD 0.51 x VDD V 1, 2 I/O reference voltage DQ bus VREFDQ(DC) 0.49 x VDD 0.5 x VDD 0.51 x VDD V 2, 3 I/O reference voltage DQ bus in SELF REFRESH VREFDQ(SR) VSS 0.5 x VDD VDD V 4 VTT - 0.5 x VDDQ - V 5 Command/address termination voltage (system level, not direct DRAM input) Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. VREFCA(DC) is expected to be approximately 0.5 x VDD and to track variations in the DC level. Externally generated peak noise (non-common mode) on VREFCA may not exceed 1% x VDD around the VREFCA(DC) value. Peak-to-peak AC noise on VREFCA should not exceed 2% of VREFCA(DC). 2. DC values are determined to be less than 20 MHz in frequency. DRAM must meet specifications if the DRAM induces additional AC noise greater than 20 MHz in frequency. 3. VREFDQ(DC) is expected to be approximately 0.5 x VDD and to track variations in the DC level. Externally generated peak noise (non-common mode) on VREFDQ may not exceed 1% x VDD around the VREFDQ(DC) value. Peak-to-peak AC noise on VREFDQ should not exceed 2% of VREFDQ(DC). 4. VREFDQ(DC) may transition to VREFDQ(SR) and back to VREFDQ(DC) when in SELF REFRESH, within restrictions outlined in the SELF REFRESH section. 5. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors. Minimum and maximum values are system-dependent. 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Table 25: DDR3L 1.35V Input Switching Conditions - Command and Address Parameter/Condition Symbol DDR3L-800/1066 DDR3L-1333/1600 DDR3L-1866/2133 Units Command and Address 5 160 160 - mV VIH(AC135),min5 135 135 135 mV - - 125 mV VIH(DC90),min 90 90 90 mV Input low DC voltage: Logic 0 VIL(DC90),min -90 -90 -90 mV Input low AC voltage: Logic 0 VIL(AC125),min5 - - -125 mV VIL(AC135),min5 -135 -135 -135 mV 5 -160 -160 - mV Input high AC voltage: Logic 1 VIH(AC160),min VIH(AC125),min Input high DC voltage: Logic 1 VIL(AC160),min 5 DQ and DM Input high AC voltage: Logic 1 VIH(AC160),min5 160 160 - mV 5 135 135 135 mV 5 - - 130 mV VIH(AC135),min VIH(AC125),min Input high DC voltage: Logic 1 VIH(DC90),min 90 90 90 mV Input low DC voltage: Logic 0 VIL(DC90),min -90 -90 -90 mV Input low AC voltage: Logic 0 VIL(AC125),min5 - - -130 mV 5 -135 -135 -135 mV VIL(AC160),min5 -160 -160 - mV VIL(AC135),min Notes: 1. All voltages are referenced to VREF. VREF is VREFCA for control, command, and address. All slew rates and setup/hold times are specified at the DRAM ball. VREF is VREFDQ for DQ and DM inputs. 2. Input setup timing parameters (tIS and tDS) are referenced at VIL(AC)/VIH(AC), not VREF(DC). 3. Input hold timing parameters (tIH and tDH) are referenced at VIL(DC)/VIH(DC), not VREF(DC). 4. Single-ended input slew rate = 1 V/ns; maximum input voltage swing under test is 900mV (peak-to-peak). 5. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC160),min and VIH(AC135),min (corresponding VIL(AC160),min and VIL(AC135),min). For DDR3-800, the address/ command inputs must use either VIH(AC160),min with tIS(AC160) of 210ps or VIH(AC150),min with tIS(AC135) of 365ps; independently, the data inputs must use either VIH(AC160),min with tDS(AC160) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Table 26: DDR3L 1.35V Differential Input Operating Conditions (CK, CK# and DQS, DQS#) Parameter/Condition Symbol Min Max Units Notes Differential input logic high - slew VIH,diff(AC)slew 180 N/A mV 4 Differential input logic low - slew VIL,diff(AC)slew N/A -180 mV 4 Differential input logic high VIH,diff(AC) 2 x (VIH(AC) - VREF) VDD/VDDQ mV 5 Differential input logic low VIL,diff(AC) VSS/VSSQ 2 x (VIL(AC) - VREF) mV 6 VIX VREF(DC) - 150 VREF(DC) + 150 mV 5, 7, 9 VIX (175) VREF(DC) - 175 VREF(DC) + 175 mV 5, 7-9 VDDQ/2 + 160 VDDQ mV 5 VDD/2 + 160 VDD mV 5 VSSQ VDDQ/2 - 160 mV 6 VSS VDD/2 - 160 mV 6 Differential input crossing voltage relative to VDD/2 for DQS, DQS#; CK, CK# Differential input crossing voltage relative to VDD/2 for CK, CK# Single-ended high level for strobes Single-ended high level for CK, CK# Single-ended low level for strobes Single-ended low level for CK, CK# Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN VSEH VSEL Clock is referenced to VDD and VSS. Data strobe is referenced to VDDQ and VSSQ. Reference is VREFCA(DC) for clock and VREFDQ(DC) for strobe. Differential input slew rate = 2 V/ns. Defines slew rate reference points, relative to input crossing voltages. Minimum DC limit is relative to single-ended signals; overshoot specifications are applicable. Maximum DC limit is relative to single-ended signals; undershoot specifications are applicable. The typical value of VIX(AC) is expected to be about 0.5 x VDD of the transmitting device, and VIX(AC) is expected to track variations in VDD. VIX(AC) indicates the voltage at which differential input signals must cross. The VIX extended range (175mV) is allowed only for the clock; this VIX extended range is only allowed when the following conditions are met: The single-ended input signals are monotonic, have the single-ended swing VSEL, VSEH of at least VDD/2 250mV, and the differential slew rate of CK, CK# is greater than 3 V/ns. VIX must provide 25mV (single-ended) of the voltages separation. 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Figure 15: DDR3L 1.35V Input Signal VIL and VIH levels with ringback VDDQ + 0.4V Overshoot VDD + 0.4V Narrow pulse width Minimum VIL and VIH levels VIH MIN(AC) VIH MIN(DC) VIH(AC) VIH(DC) VIL MIN(AC) VDDQ VREF + 125/135/160mV VIH(AC) VREF + 90mV VIH(DC) VREF DC MAX + 1% .51 x VDD VREF = VDD/2 .49 x VDD VREF DC MIN - 1% VDD MAX 2% Total VREF DC MAX VREF DC MIN MAX 2% Total VIL MIN(DC) VDD VIL(DC) VREFDQ + AC noise VREFDQ + DC error VREFDQ - DC error VREFDQ - AC noise VREF - 90mV VIL(DC) VREF - 125/135/160mV VIL(AC) VIL(AC) 0.0V VSS VSS - 0.40V Undershoot VSS - 0.40V Narrow pulse width Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Numbers in diagrams reflect nominal values. 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC DDR3L 1.35V AC Overshoot/Undershoot Specification Table 27: DDR3L Control and Address Pins Parameter DDR3L-800 DRR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 DDR3L-2133 Maximum peak amplitude allowed for overshoot area (see Figure 16) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 17) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD (see Figure 16) 0.67 V/ns 0.5 V/ns 0.4 V/ns 0.33 V/ns 0.28 V/ns 0.25 V/ns Maximum undershoot area below VSS (see Figure 17) 0.67 V/ns 0.5 V/ns 0.4 V/ns 0.33 V/ns 0.28 V/ns 0.25 V/ns Table 28: DDR3L 1.35V Clock, Data, Strobe, and Mask Pins Parameter DDR3L-800 DDR3L-1066 DDR3L-1333 DDR3L-1600 DDR3L-1866 DDR3L-2133 Maximum peak amplitude allowed for overshoot area (see Figure 16) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum peak amplitude allowed for undershoot area (see Figure 17) 0.4V 0.4V 0.4V 0.4V 0.4V 0.4V Maximum overshoot area above VDD/VDDQ (see Figure 16) 0.25 V/ns 0.19 V/ns 0.15 V/ns 0.13 V/ns 0.11 V/ns 0.10 V/ns Maximum undershoot area below VSS/VSSQ (see Figure 17) 0.25 V/ns 0.19 V/ns 0.15 V/ns 0.13 V/ns 0.11 V/ns 0.10 V/ns Figure 16: Overshoot Maximum amplitude Overshoot area Volts (V) VDD/VDDQ Time (ns) 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Figure 17: Undershoot VSS/VSSQ Volts (V) Undershoot area Maximum amplitude Time (ns) Figure 18: VIX for Differential Signals VDD, VDDQ VDD, VDDQ CK#, DQS# CK#, DQS# X VIX VIX VDD/2, VDDQ/2 X X VDD/2, VDDQ/2 VIX X VIX CK, DQS CK, DQS VSS, VSSQ VSS, VSSQ Figure 19: Single-Ended Requirements for Differential Signals VDD or VDDQ VSEH,min VDD/2 or VDDQ/2 VSEH CK or DQS VSEL,max VSEL VSS or VSSQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Figure 20: Definition of Differential AC-Swing and tDVAC tDVAC VIH,diff(AC)min VIH,diff,min CK - CK# DQS - DQS# 0.0 VIL,diff,max VIL,diff(AC)max tDVAC Half cycle Table 29: DDR3L 1.35V - Minimum Required Time tDVAC for CK/CK#, DQS/DQS# Differential for AC Ringback DDR3L-800/1066/1333/1600 tDVAC tDVAC DDR3L-1866/2133 tDVAC tDVAC tDVAC Slew Rate (V/ns) at 320mV (ps) at 270mV (ps) at 270mV (ps) at 250mV (ps) at 260mV (ps) >4.0 189 201 163 168 176 4.0 189 201 163 168 176 3.0 162 179 140 147 154 2.0 109 134 95 105 111 1.8 91 119 80 91 97 1.6 69 100 62 74 78 1.4 40 76 37 52 55 1.2 Note 1 44 5 22 24 1.0 Note 1 <1.0 Note 1 Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input signal shall become equal to or less than VIL(AC) level. 56 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC DDR3L 1.35V Slew Rate Definitions for Single-Ended Input Signals Setup (tIS and tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF and the first crossing of V IH(AC)min. Setup (tIS and tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V REF and the first crossing of V IL(AC)max. Hold (tIH and tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF. Hold (tIH and tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and the first crossing of V REF (see Figure 21 (page 58)). Table 30: Single-Ended Input Slew Rate Definition Input Slew Rates (Linear Signals) Input Measured Edge From To Rising VREF VIH(AC),min Falling VREF VIL(AC),max Rising VIL(DC),max VREF Falling VIH(DC),min VREF Calculation VIH(AC),min - VREF TRSse Setup VREF - VIL(AC),max TFSse VREF - VIL(DC),max TFHse Hold 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 57 VIH(DC),min - VREF TRSHse Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC Figure 21: Nominal Slew Rate Definition for Single-Ended Input Signals TRSse Setup Single-ended input voltage (DQ, CMD, ADDR) VIH(AC)min VIH(DC)min VREFDQ or VREFCA VIL(DC)max VIL(AC)max TFSse TRHse Hold Single-ended input voltage (DQ, CMD, ADDR) VIH(AC)min VIH(DC)min VREFDQ or VREFCA VIL(DC)max VIL(AC)max TFHse 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 58 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Specifications - DC and AC DDR3L 1.35V Slew Rate Definitions for Differential Input Signals Input slew rate for differential signals (CK, CK# and DQS, DQS#) are defined and measured, as shown in Table 31 and Figure 22. The nominal slew rate for a rising signal is defined as the slew rate between V IL,diff,max and V IH,diff,min. The nominal slew rate for a falling signal is defined as the slew rate between V IH,diff,min and V IL,diff,max. Table 31: DDR3L 1.35V Differential Input Slew Rate Definition Differential Input Slew Rates (Linear Signals) Input CK and DQS reference Measured Edge From To Calculation Rising VIL,diff,max VIH,diff,min Falling VIH,diff,min VIL,diff,max VIH,diff,min - VIL,diff,max TRdiff VIH,diff,min - VIL,diff,max TFdiff Figure 22: DDR3L 1.35V Nominal Differential Input Slew Rate Definition for DQS, DQS# and CK, CK# Differential input voltage (DQS, DQS#; CK, CK#) TRdiff VIH,diff,min 0 VIL,diff,max TFdiff 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 59 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ODT Characteristics ODT Characteristics The ODT effective resistance RTT is defined by MR1[9, 6, and 2]. ODT is applied to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls (x8 devices only). The ODT target values and a functional representation are listed in Table 32 and Table 33 (page 61). The individual pull-up and pull-down resistors (RTT(PU) and RTT(PD)) are defined as follows: * RTT(PU) = (VDDQ - VOUT)/|IOUT|, under the condition that RTT(PD) is turned off * RTT(PD) = (VOUT)/|IOUT|, under the condition that RTT(PU) is turned off Figure 23: ODT Levels and I-V Characteristics Chip in termination mode ODT VDDQ IPU IOUT = IPD - IPU RTT(PU) To other circuitry such as RCV, . . . DQ IOUT RTT(PD) VOUT IPD VSSQ Table 32: On-Die Termination DC Electrical Characteristics Parameter/Condition Symbol RTT effective impedance RTT(EFF) VM Deviation of VM with respect to VDDQ/2 Notes: Min Nom Max Unit See Table 33 (page 61) -5 5 Notes 1, 2 % 1, 2, 3 1. Tolerance limits are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD, VSSQ = VSS). Refer to ODT Sensitivity (page 62) if either the temperature or voltage changes after calibration. 2. Measurement definition for RTT: Apply VIH(AC) to pin under test and measure current I[VIH(AC)], then apply VIL(AC) to pin under test and measure current I[VIL(AC)]: VIH(AC) - VIL(AC) RTT = I(VIH(AC)) - I(VIL(AC)) 3. Measure voltage (VM) at the tested pin with no load: VM = 2 x VM - 1 x 100 VDDQ 4. For IT and AT devices, the minimum values are derated by 6% when the device operates between -40C and 0C (TC). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 60 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ODT Characteristics 1.35V ODT Resistors Table 33 provides an overview of the ODT DC electrical characteristics. The values provided are not specification requirements; however, they can be used as design guidelines to indicate what RTT is targeted to provide: * * * * * RTT 120 is made up of RTT120(PD240) and RTT120(PU240) RTT 60 is made up of RTT60(PD120) and RTT60(PU120) RTT 40 is made up of RTT40(PD80) and RTT40(PU80) RTT 30 is made up of RTT30(PD60) and RTT30(PU60) RTT 20 is made up of RTT20(PD40) and RTT20(PU40) Table 33: 1.35V RTT Effective Impedance MR1 [9, 6, 2] RTT Resistor VOUT Min Nom Max Units 0, 1, 0 RTT,120PD240 0.2 x VDDQ 0.6 1.0 1.15 RZQ/1 0.5 x VDDQ 0.9 1.0 1.15 RZQ/1 0.8 x VDDQ 0.9 1.0 1.45 RZQ/1 RTT,120PU240 0, 0, 1 RTT,60PD120 RTT,60PU120 0, 1, 1 RTT,40PD80 RTT,40PU80 1, 0, 1 RTT,30PD60 RTT,30PU60 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 0.2 x VDDQ 0.9 1.0 1.45 RZQ/1 0.5 x VDDQ 0.9 1.0 1.15 RZQ/1 0.8 x VDDQ 0.6 1.0 1.15 RZQ/1 VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/2 0.2 x VDDQ 0.6 1.0 1.15 RZQ/2 0.5 x VDDQ 0.9 1.0 1.15 RZQ/2 0.8 x VDDQ 0.9 1.0 1.45 RZQ/2 0.2 x VDDQ 0.9 1.0 1.45 RZQ/2 0.5 x VDDQ 0.9 1.0 1.15 RZQ/2 0.8 x VDDQ 0.6 1.0 1.15 RZQ/2 VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/4 0.2 x VDDQ 0.6 1.0 1.15 RZQ/3 0.5 x VDDQ 0.9 1.0 1.15 RZQ/3 0.8 x VDDQ 0.9 1.0 1.45 RZQ/3 0.2 x VDDQ 0.9 1.0 1.45 RZQ/3 0.5 x VDDQ 0.9 1.0 1.15 RZQ/3 0.8 x VDDQ 0.6 1.0 1.15 RZQ/3 VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/6 0.2 x VDDQ 0.6 1.0 1.15 RZQ/4 0.5 x VDDQ 0.9 1.0 1.15 RZQ/4 0.8 x VDDQ 0.9 1.0 1.45 RZQ/4 0.2 x VDDQ 0.9 1.0 1.45 RZQ/4 0.5 x VDDQ 0.9 1.0 1.15 RZQ/4 0.8 x VDDQ 0.6 1.0 1.15 RZQ/4 VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/8 61 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ODT Characteristics Table 33: 1.35V RTT Effective Impedance (Continued) MR1 [9, 6, 2] RTT Resistor VOUT Min Nom Max Units 1, 0, 0 RTT,20PD40 0.2 x VDDQ 0.6 1.0 1.15 RZQ/6 0.5 x VDDQ 0.9 1.0 1.15 RZQ/6 0.8 x VDDQ 0.9 1.0 1.45 RZQ/6 0.2 x VDDQ 0.9 1.0 1.45 RZQ/6 0.5 x VDDQ 0.9 1.0 1.15 RZQ/6 0.8 x VDDQ 0.6 1.0 1.15 RZQ/6 VIL(AC) to VIH(AC) 0.9 1.0 1.65 RZQ/12 RTT,20PU40 ODT Sensitivity If either the temperature or voltage changes after I/O calibration, then the tolerance limits listed in Table 32 and Table 33 can be expected to widen according to Table 34 and Table 35. Table 34: ODT Sensitivity Definition Symbol Min Max Unit RTT 0.9 - dRTTdT x |DT| - dRTTdV x |DV| 1.6 + dRTTdT x |DT| + dRTTdV x |DV| RZQ/(2, 4, 6, 8, 12) Note: 1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ. Table 35: ODT Temperature and Voltage Sensitivity Note: Change Min Max Unit dRTTdT 0 1.5 %/C dRTTdV 0 0.15 %/mV 1. T = T - T(@ calibration), V = VDDQ - VDDQ(@ calibration) and VDD = VDDQ. ODT Timing Definitions ODT loading differs from that used in AC timing measurements. The reference load for ODT timings is shown in Figure 24. Two parameters define when ODT turns on or off synchronously, two define when ODT turns on or off asynchronously, and another defines when ODT turns on or off dynamically. Table 36 and Table 37 (page 63) outline and provide definition and measurement references settings for each parameter. ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance begins to turn off. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 62 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ODT Characteristics Figure 24: ODT Timing Reference Load DUT CK, CK# VREF VDDQ/2 RTT = 25 DQ, DM DQS, DQS# TDQS, TDQS# ZQ VTT = VSSQ Timing reference point RZQ = 240 VSSQ Table 36: ODT Timing Definitions Symbol Begin Point Definition End Point Definition Figure tAON Rising edge of CK - CK# defined by the end point of ODTLon Extrapolated point at VSSQ Figure 25 (page 64) tAOF Rising edge of CK - CK# defined by the end point of ODTLoff Extrapolated point at VRTT,nom Figure 25 (page 64) tAONPD Rising edge of CK - CK# with ODT first being Extrapolated point at VSSQ registered HIGH Figure 26 (page 64) tAOFPD Rising edge of CK - CK# with ODT first being Extrapolated point at VRTT,nom registered LOW Figure 26 (page 64) Rising edge of CK - CK# defined by the end Extrapolated points at VRTT(WR) and point of ODTLcnw, ODTLcwn4, or ODTLcwn8 VRTT,nom Figure 27 (page 65) tADC Table 37: DDR3L(1.35V) Reference Settings for ODT Timing Measurements Measured Parameter RTT,nom Setting RTT(WR) Setting VSW1 VSW2 tAON RZQ/4 (60 N/A 50mV 100mV RZQ/12 (20 N/A 100mV 200mV tAOF tAONPD tAOFPD tADC 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN RZQ/4 (60 N/A 50mV 100mV RZQ/12 (20 N/A 100mV 200mV RZQ/4 (60 N/A 50mV 100mV RZQ/12 (20 N/A 100mV 200mV RZQ/4 (60 N/A 50mV 100mV RZQ/12 (20 N/A 100mV 200mV RZQ/12 (20 RZQ/2 (20 200mV 250mV 63 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ODT Characteristics Figure 25: tAON and tAOF Definitions tAON tAOF Begin point: Rising edge of CK - CK# defined by the end point of ODTLoff Begin point: Rising edge of CK - CK# defined by the end point of ODTLon CK CK VDDQ/2 CK# CK# tAON tAOF End point: Extrapolated point at VRTT,nom TSW2 TSW1 TSW1 DQ, DM DQS, DQS# TDQS, TDQS# VSW2 TSW1 VSW2 VSW1 VSW1 VSSQ VRTT,nom VSSQ End point: Extrapolated point at VSSQ Figure 26: tAONPD and tAOFPD Definitions tAONPD tAOFPD Begin point: Rising edge of CK - CK# with ODT first registered low Begin point: Rising edge of CK - CK# with ODT first registered high CK CK VDDQ/2 CK# CK# tAONPD tAOFPD End point: Extrapolated point at VRTT,nom TSW2 TSW2 TSW1 DQ, DM DQS, DQS# TDQS, TDQS# TSW1 VSW2 VSSQ VRTT,nom VSW2 VSW1 VSW1 VSSQ End point: Extrapolated point at VSSQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 64 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ODT Characteristics Figure 27: tADC Definition Begin point: Rising edge of CK - CK# defined by the end point of ODTLcnw Begin point: Rising edge of CK - CK# defined by the end point of ODTLcwn4 or ODTLcwn8 CK VDDQ/2 CK# tADC VRTT,nom DQ, DM DQS, DQS# TDQS, TDQS# End point: Extrapolated point at VRTT,nom tADC VRTT,nom TSW21 TSW11 VSW2 VSW1 TSW22 TSW12 VRTT(WR) End point: Extrapolated point at VRTT(WR) VSSQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 65 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Driver Impedance Output Driver Impedance The output driver impedance is selected by MR1[5,1] during initialization. The selected value is able to maintain the tight tolerances specified if proper ZQ calibration is performed. Output specifications refer to the default output driver unless specifically stated otherwise. A functional representation of the output buffer is shown below. The output driver impedance RON is defined by the value of the external reference resistor RZQ as follows: * RON,x = RZQ/y (with RZQ = 240 1%; x = 34 or 40 with y = 7 or 6, respectively) The individual pull-up and pull-down resistors RON(PU) and RON(PD) are defined as follows: * RON(PU) = (VDDQ - VOUT)/|IOUT|, when RON(PD) is turned off * RON(PD) = (VOUT)/|IOUT|, when RON(PU) is turned off Figure 28: Output Driver Chip in drive mode Output driver VDDQ IPU To other circuitry such as RCV, . . . RON(PU) DQ IOUT RON(PD) VOUT IPD VSSQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Driver Impedance 34 Ohm Output Driver Impedance The 34 driver (MR1[5, 1] = 01) is the default driver. Unless otherwise stated, all timings and specifications listed herein apply to the 34 driver only. Its impedance RON is defined by the value of the external reference resistor RZQ as follows: RON34 = RZQ/7 (with nominal RZQ = 240 1%) and is actually 34.3 1%. Table 38: DDR3L 34 Ohm Driver Impedance Characteristics MR1 [5, 1] RON Resistor VOUT Min Nom Max Units 0, 1 RON,34PD 0.2 x VDDQ 0.6 1.0 1.15 RZQ/7 RON,34PU Pull-up/pull-down mismatch (MMPUPD) Notes: 0.5 x VDDQ 0.9 1.0 1.15 RZQ/7 0.8 x VDDQ 0.9 1.0 1.45 RZQ/7 0.2 x VDDQ 0.9 1.0 1.45 RZQ/7 0.5 x VDDQ 0.9 1.0 1.15 RZQ/7 0.8 x VDDQ 0.6 1.0 1.15 RZQ/7 VIL(AC) to VIH(AC) -10 N/A 10 % 1. Tolerance limits assume RZQ of 2401% and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage: VDDQ = VDD; VSSQ = VSS). Refer to DDR3L 34 Ohm Output Driver Sensitivity (page 69) if either the temperature or the voltage changes after calibration. 2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RON(PU) and RON(PD) at 0.5 x VDDQ: RON(PU) - RON(PD) MMPUPD = x 100 RON,nom 3. For IT and AT devices, the minimum values are derated by 6% when the device operates between -40C and 0C (TC). A larger maximum limit will result in slightly lower minimum currents. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Driver Impedance DDR3L 34 Ohm Driver Using Table 39, the 34 driver's current range has been calculated and summarized in Table 40 (page 68) VDD = 1.35V, Table 41 for V DD = 1.45V, and Table 42 (page 69) for VDD = 1.283V. The individual pull-up and pull-down resistors R ON34(PD) and RON34(PU) are defined as follows: * RON34(PD) = (VOUT)/|IOUT|; RON34(PU) is turned off * RON34(PU) = (VDDQ - VOUT)/|IOUT|; RON34(PD) is turned off Table 39: DDR3L 34 Ohm Driver Pull-Up and Pull-Down Impedance Calculations RON Min Nom Max Unit RZQ = 240 237.6 240 242.4 33.9 34.3 34.6 MR1[5,1] RON Resistor VOUT Min Nom Max Unit 0, 1 RON34(PD) 0.2 x VDDQ 20.4 34.3 38.1 0.5 x VDDQ 30.5 34.3 38.1 0.8 x VDDQ 30.5 34.3 48.5 0.2 x VDDQ 30.5 34.3 48.5 0.5 x VDDQ 30.5 34.3 38.1 0.8 x VDDQ 20.4 34.3 38.1 RZQ/7 = (240 RON34(PU) Table 40: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.35V MR1[5,1] RON Resistor VOUT Max Nom Min Unit 0, 1 RON34(PD) IOL @ 0.2 x VDDQ 13.3 7.9 7.1 mA IOL @ 0.5 x VDDQ 22.1 19.7 17.7 mA IOL @ 0.8 x VDDQ 35.4 31.5 22.3 mA RON34(PU) IOH @ 0.2 x VDDQ 35.4 31.5 22.3 mA IOH @ 0.5 x VDDQ 22.1 19.7 17.7 mA IOH @ 0.8 x VDDQ 13.3 7.9 7.1 mA Min Unit Table 41: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.45V MR1[5,1] RON Resistor VOUT Max 0, 1 RON34(PD) IOL @ 0.2 x VDDQ 14.2 8.5 7.6 mA IOL @ 0.5 x VDDQ 23.7 21.1 19.0 mA IOL @ 0.8 x VDDQ 38.0 33.8 23.9 mA IOH @ 0.2 x VDDQ 38.0 33.8 23.9 mA IOH @ 0.5 x VDDQ 23.7 21.1 19.0 mA IOH @ 0.8 x VDDQ 14.2 8.5 7.6 mA RON34(PU) 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 68 Nom Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Driver Impedance Table 42: DDR3L 34 Ohm Driver IOH/IOL Characteristics: VDD = VDDQ = DDR3L@1.283 MR1[5,1] RON Resistor VOUT Max Nom Min Unit 0, 1 RON34(PD) IOL @ 0.2 x VDDQ 12.6 7.5 6.7 mA IOL @ 0.5 x VDDQ 21.0 18.7 16.8 mA IOL @ 0.8 x VDDQ 33.6 29.9 21.2 mA RON34(PU) IOH @ 0.2 x VDDQ 33.6 29.9 21.2 mA IOH @ 0.5 x VDDQ 21.0 18.7 16.8 mA IOH @ 0.8 x VDDQ 12.6 7.5 6.7 mA DDR3L 34 Ohm Output Driver Sensitivity If either the temperature or the voltage changes after ZQ calibration, then the tolerance limits listed in Table 38 (page 67) can be expected to widen according to Table 43 and Table 44. Table 43: DDR3L 34 Ohm Output Driver Sensitivity Definition Symbol Min Max Unit RON(PD) @ 0.2 x VDDQ 0.6 - dRONdTL x |T| - dRONdVL x |V| 1.1 + dRONdTL x |T| + dRONdVL x |V| RZQ/7 RON(PD) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/7 RON(PD) @ 0.8 x VDDQ 0.9 - dRONdTH x |T| - dRONdVH x |V| 1.4 + dRONdTH x |T| + dRONdVH x |V| RZQ/7 RON(PU) @ 0.2 x VDDQ 0.9 - dRONdTL x |T| - dRONdVL x |V| 1.4 + dRONdTL x |T| + dRONdVL x |V| RZQ/7 RON(PU) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/7 RON(PU) @ 0.8 x VDDQ 0.6 - dRONdTH x |T| - dRONdVH x |V| 1.1 + dRONdTH x |T| + dRONdVH x |V| RZQ/7 Note: 1. T = T - T(@CALIBRATION)V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ. Table 44: DDR3L 34 Ohm Output Driver Voltage and Temperature Sensitivity 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Change Min Max Unit dRONdTM 0 1.5 %/C dRONdVM 0 0.13 %/mV dRONdTL 0 1.5 %/C dRONdVL 0 0.13 %/mV dRONdTH 0 1.5 %/C dRONdVH 0 0.13 %/mV 69 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Driver Impedance DDR3L Alternative 40 Ohm Driver Table 45: DDR3L 40 Ohm Driver Impedance Characteristics MR1 [5, 1] RON Resistor VOUT Min Nom Max Units 0, 0 RON,40PD 0.2 x VDDQ 0.6 1.0 1.15 RZQ/6 0.5 x VDDQ 0.9 1.0 1.15 RZQ/6 0.8 x VDDQ 0.9 1.0 1.45 RZQ/6 0.2 x VDDQ 0.9 1.0 1.45 RZQ/6 0.5 x VDDQ 0.9 1.0 1.15 RZQ/6 0.8 x VDDQ 0.6 1.0 1.15 RZQ/6 VIL(AC) to VIH(AC) -10 N/A 10 % RON,40PU Pull-up/pull-down mismatch (MMPUPD) 1. Tolerance limits assume RZQ of 2401% and are applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). Refer to DDR3L 40 Ohm Output Driver Sensitivity (page 70) if either the temperature or the voltage changes after calibration. 2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure both RON(PU) and RON(PD) at 0.5 x VDDQ: RON(PU) - RON(PD) MMPUPD = x 100 RON,nom Notes: 3. For IT and AT devices, the minimum values are derated by 6% when the device operates between -40C and 0C (TC). A larger maximum limit will result in slightly lower minimum currents. DDR3L 40 Ohm Output Driver Sensitivity If either the temperature or the voltage changes after I/O calibration, then the tolerance limits listed in Table 45 can be expected to widen according to Table 46 and Table 47 (page 71). Table 46: DDR3L 40 Ohm Output Driver Sensitivity Definition Symbol Min Max Unit RON(PD) @ 0.2 x VDDQ 0.6 - dRONdTL x |T| - dRONdVL x |V| 1.1 + dRONdTL x |T| + dRONdVL x |V| RZQ/6 RON(PD) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/6 RON(PD) @ 0.8 x VDDQ 0.9 - dRONdTH x |T| - dRONdVH x |V| 1.4 + dRONdTH x |T| + dRONdVH x |V| RZQ/6 RON(PU) @ 0.2 x VDDQ 0.9 - dRONdTL x |T| - dRONdVL x |V| 1.4 + dRONdTL x |T| + dRONdVL x |V| RZQ/6 RON(PU) @ 0.5 x VDDQ 0.9 - dRONdTM x |T| - dRONdVM x |V| 1.1 + dRONdTM x |T| + dRONdVM x |V| RZQ/6 RON(PU) @ 0.8 x VDDQ 0.6 - dRONdTH x |T| - dRONdVH x |V| 1.1 + dRONdTH x |T| + dRONdVH x |V| RZQ/6 Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. T = T - T(@CALIBRATION)V = VDDQ - VDDQ(@CALIBRATION); and VDD = VDDQ. 70 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Driver Impedance Table 47: 40 Ohm Output Driver Voltage and Temperature Sensitivity 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Change Min Max Unit dRONdTM 0 1.5 %/C dRONdVM 0 0.15 %/mV dRONdTL 0 1.5 %/C dRONdVL 0 0.15 %/mV dRONdTH 0 1.5 %/C dRONdVH 0 0.15 %/mV 71 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Characteristics and Operating Conditions Output Characteristics and Operating Conditions Table 48: DDR3L Single-Ended Output Driver Characteristics All voltages are referenced to VSS Parameter/Condition Output leakage current: DQ are disabled; 0V VOUT VDDQ; ODT is disabled; ODT is HIGH Output slew rate: Single-ended; For rising and falling edges, measure between VOL(AC) = VREF - 0.09 x VDDQ and VOH(AC) = VREF + 0.09 x VDDQ Symbol Min Max Unit Notes IOZ -5 5 A 1 SRQse 1.75 6 V/ns 1, 2, 3, 4 Single-ended DC high-level output voltage VOH(DC) 0.8 x VDDQ V 1, 2, 5 Single-ended DC mid-point level output voltage VOM(DC) 0.5 x VDDQ V 1, 2, 5 Single-ended DC low-level output voltage VOL(DC) 0.2 x VDDQ V 1, 2, 5 Single-ended AC high-level output voltage VOH(AC) VTT + 0.1 x VDDQ V 1, 2, 3, 6 Single-ended AC low-level output voltage VOL(AC) VTT - 0.1 x VDDQ V 1, 2, 3, 6 % 1, 7 Delta RON between pull-up and pull-down for DQ/DQS MMPUPD 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 10 Output to VTT (VDDQ/2) via 25 resistor Test load for AC timing and output slew rates Notes: -10 3 1. RZQ of 2401% with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). 2. VTT = VDDQ/2. 3. See Figure 31 (page 75) for the test load configuration. 4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are either all static or all switching in the opposite direction. For all other DQ signal switching combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns. 5. See Figure 28 (page 66) for IV curve linearity. Do not use AC test load. 6. See Slew Rate Definitions for Single-Ended Output Signals (page 75) for output slew rate. 7. See Figure 28 (page 66) for additional information. 8. See Figure 29 (page 73) for an example of a single-ended output signal. 72 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Characteristics and Operating Conditions Figure 29: DQ Output Signal MAX output VOH(AC) VOL(AC) MIN output Table 49: DDR3L Differential Output Driver Characteristics All voltages are referenced to VSS Parameter/Condition Output leakage current: DQ are disabled; 0V VOUT VDDQ; ODT is disabled; ODT is HIGH DDR3L Output slew rate: Differential; For rising and falling edges, measure between VOL,diff(AC) = -0.18 x VDDQ and VOH,diff(AC) = 0.18 x VDDQ Symbol Min Max Unit Notes IOZ -5 5 A 1 SRQdiff 3.5 12 V/ns 1 V 1, 4 V 1, 4 % 1, 5 Differential high-level output voltage VOH,diff(AC) Differential low-level output voltage VOL,diff(AC) Delta Ron between pull-up and pull-down for DQ/DQS MMPUPD 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN -0.2 x VDDQ -10 10 Output to VTT (VDDQ/2) via 25 resistor Test load for AC timing and output slew rates Notes: +0.2 x VDDQ 3 1. RZQ of 2401% with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). 2. VREF = VDDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate. 3. See Figure 31 (page 75) for the test load configuration. 4. See Table 52 (page 77) for the output slew rate. 5. See Table 38 (page 67) for additional information. 6. See Figure 30 (page 74) for an example of a differential output signal. 73 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Characteristics and Operating Conditions Table 50: DDR3L Differential Output Driver Characteristics VOX(AC) All voltages are referenced to VSS Parameter/ Condition Output differential crosspoint voltage Parameter/ Condition Output differential crosspoint voltage DDR3L- 800/1066/1333 DQS/DQS# Differential Slew Rate Symbol 3.5V/ns 4V/ns 5V/ns 6V/ns 7V/ns 8V/ns 9V/ns 10V/ns 12V/ns Unit VOX(AC) Max 115 130 135 195 205 205 205 205 205 mV Min -115 -130 -135 -195 -205 -205 -205 -205 -205 mV DDR3L-1600/1866/2133 DQS/DQS# Differential Slew Rate Symbol 3.5V/ns 4V/ns 5v/ns 6V/ns 7V/ns 8V/ns 9V/ns 10V/ns 12V/ns Unit VOX(AC) Max 90 105 135 155 180 205 205 205 205 mV Min -90 -105 -135 -155 -180 -205 -205 -205 -205 mV Notes: 1. RZQ of 2401% with RZQ/7 enabled (default 34 driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). 2. See Figure 31 (page 75) for the test load configuration. 3. See Figure 30 (page 74) for an example of a differential output signal. 4. For a differential slew rate between the list values, the VOX(AC) value may be obtained by linear interpolation. Figure 30: Differential Output Signal MAX output VOH X X VOX(AC)max X X VOX(AC)min VOL MIN output 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 74 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Characteristics and Operating Conditions Reference Output Load Figure 31 (page 75) represents the effective reference load of 25 used in defining the relevant device AC timing parameters (except ODT reference timing) as well as the output slew rate measurements. It is not intended to be a precise representation of a particular system environment or a depiction of the actual load presented by a production tester. System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Figure 31: Reference Output Load for AC Timing and Output Slew Rate VDDQ/2 DUT VREF RTT = 25 DQ DQS DQS# VTT = VDDQ/2 Timing reference point ZQ RZQ = 240 VSS Slew Rate Definitions for Single-Ended Output Signals The single-ended output driver is summarized in Table 48 (page 72). With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for single-ended signals. Table 51: Single-Ended Output Slew Rate Definition Single-Ended Output Slew Rates (Linear Signals) Measured Output Edge From To Calculation DQ Rising VOL(AC) VOH(AC) VOH(AC) - VOL(AC) TRse Falling VOH(AC) VOL(AC) VOH(AC) - VOL(AC) TFse 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 75 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Characteristics and Operating Conditions Figure 32: Nominal Slew Rate Definition for Single-Ended Output Signals TRse VOH(AC) VTT VOL(AC) TFse 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 76 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Output Characteristics and Operating Conditions Slew Rate Definitions for Differential Output Signals The differential output driver is summarized in Table 49 (page 73). With the reference load for timing measurements, the output slew rate for falling and rising edges is defined and measured between V OL(AC) and V OH(AC) for differential signals. Table 52: Differential Output Slew Rate Definition Differential Output Slew Rates (Linear Signals) Measured Output Edge From To Calculation DQS, DQS# Rising VOL,diff(AC) VOH,diff(AC) VOH,diff(AC) - VOL,diff(AC) TRdiff Falling VOH,diff(AC) VOL,diff(AC) VOH,diff(AC) - VOL,diff(AC) TFdiff Figure 33: Nominal Differential Output Slew Rate Definition for DQS, DQS# TRdiff VOH,diff(AC) 0 VOL,diff(AC) TFdiff 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 77 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Speed Bin Tables Speed Bin Tables Table 53: DDR3L-1066 Speed Bins DDR3L-1066 Speed Bin -187E -187 CL-tRCD-tRP 7-7-7 8-8-8 Parameter Symbol Min Max Min Max Unit tAA 13.125 - 15 - ns tRCD 13.125 - 15 - ns PRECHARGE command period tRP 13.125 - 15 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 50.625 - 52.5 - ns tRAS 37.5 9 x tREFI 37.5 9 x tREFI ns 1 3.0 3.3 3.0 3.3 ns 2 ns 3 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CWL = 5 tCK (AVG) CWL = 6 tCK (AVG) CWL = 5 tCK (AVG) ns 2 CWL = 6 tCK (AVG) Reserved Reserved ns 3 CWL = 5 tCK (AVG) Reserved Reserved ns 3 CWL = 6 tCK (AVG) Reserved ns 2, 3 CWL = 5 tCK (AVG) Reserved ns 3 CWL = 6 tCK (AVG) ns 2 Reserved 2.5 <2.5 Reserved 1.875 Supported CWL settings Notes: 3.3 1.875 Supported CL settings 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Notes <2.5 Reserved 2.5 3.3 1.875 <2.5 5, 6, 7, 8 5, 6, 8 CK 5, 6 5, 6 CK 1. tREFI depends on TOPER. 2. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 3. Reserved settings are not allowed. 78 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Speed Bin Tables Table 54: DDR3L-1333 Speed Bins DDR3L-1333 Speed Bin -15E1 -152 CL-tRCD-tRP 9-9-9 10-10-10 Parameter Symbol Min Max Min Max Unit tAA 13.5 - 15 - ns tRCD 13.5 - 15 - ns PRECHARGE command period tRP 13.5 - 15 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 49.5 - 51 - ns tRAS 36 9 x tREFI 36 9 x tREFI ns 3 3.0 3.3 3.0 3.3 ns 4 ns 5 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CWL = 5 tCK (AVG) CWL = 6, 7 tCK (AVG) CWL = 5 tCK (AVG) ns 4 CWL = 6 tCK (AVG) Reserved Reserved ns 5 CWL = 7 tCK (AVG) Reserved Reserved ns 5 CWL = 5 tCK (AVG) Reserved Reserved ns 5 CWL = 6 tCK (AVG) Reserved ns 4, 5 CWL = 7 tCK (AVG) Reserved Reserved ns 5 CWL = 5 tCK (AVG) Reserved Reserved ns 5 CWL = 6 tCK (AVG) ns 4 CWL = 7 tCK (AVG) Reserved Reserved ns 5 CWL = 5, 6 tCK (AVG) Reserved Reserved ns 5 CWL = 7 tCK (AVG) Reserved ns 4, 5 CWL = 5, 6 tCK (AVG) Reserved ns 5 CWL = 7 tCK (AVG) ns 4 Reserved 2.5 <2.5 1.875 1.5 <2.5 <1.875 Reserved 1.5 Supported CWL settings Notes: 3.3 1.875 Supported CL settings 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Notes <1.875 Reserved 2.5 3.3 1.875 1.5 <2.5 <1.875 5, 6, 7, 8, 9, 10 5, 6, 8, 10 CK 5, 6, 7 5, 6, 7 CK 1. 2. 3. 4. The -15E speed grade is backward compatible with 1066, CL = 7 (-187E). The -15 speed grade is backward compatible with 1066, CL = 8 (-187). tREFI depends on T OPER. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 5. Reserved settings are not allowed. 79 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Speed Bin Tables Table 55: DDR3L-1600 Speed Bins -1251 DDR3L-1600 Speed Bin CL-tRCD-tRP 11-11-11 Parameter Symbol Min Max Unit tAA 13.75 - ns tRCD 13.75 - ns PRECHARGE command period tRP 13.75 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 48.75 - ns tRAS 35 9 x tREFI ns 2 3.0 3.3 ns 3 ns 4 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CL = 11 CWL = 5 tCK (AVG) CWL = 6, 7, 8 tCK (AVG) CWL = 5 tCK (AVG) ns 3 CWL = 6 tCK (AVG) Reserved ns 4 CWL = 7, 8 tCK (AVG) Reserved ns 4 CWL = 5 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5, 6 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5, 6 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7 tCK (AVG) Reserved ns 4 CWL = 8 tCK (AVG) ns 3 Supported CL settings Supported CWL settings Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Notes Reserved 2.5 3.3 1.875 <2.5 1.875 1.5 1.5 <2.5 <1.875 <1.875 1.25 <1.5 5, 6, 7, 8, 9, 10, 11 CK 5, 6, 7, 8 CK 1. The -125 speed grade is backward compatible with 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E). 2. tREFI depends on TOPER. 3. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 4. Reserved settings are not allowed. 80 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Speed Bin Tables Table 56: DDR3L-1866 Speed Bins -1071 DDR3L-1866 Speed Bin CL-tRCD-tRP 13-13-13 Parameter Symbol Min Max tAA 13.91 20 tRCD 13.91 - ns PRECHARGE command period tRP 13.91 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 47.91 - ns tRAS 34 9 x tREFI ns 2 3.0 3.3 ns 3 ns 4 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CL = 11 CL = 12 CL = 13 CWL = 5 (AVG) CWL = 6, 7, 8, 9 tCK (AVG) CWL = 5 tCK (AVG) ns 3 CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 5, 8, 9 tCK (AVG) ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 5, 6, 9 tCK (AVG) ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) ns 4 CWL = 5, 6, 7 tCK (AVG) ns 4 CWL = 8 tCK (AVG) ns 3 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) ns 3 Supported CWL settings 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Notes tCK Supported CL settings Notes: Unit Reserved 2.5 3.3 1.875 <2.5 Reserved 1.875 1.5 <2.5 <1.875 Reserved 1.5 <1.875 Reserved Reserved 1.25 1.07 <1.5 <1.25 5, 6, 7, 8, 9, 10, 11, 13 CK 5, 6, 7, 8, 9 CK 1. The -107 speed grade is backward compatible with 1600, CL = 11 (-125) , 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E). 2. tREFI depends on TOPER. 3. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 4. Reserved settings are not allowed. 81 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Speed Bin Tables Table 57: DDR3L-2133 Speed Bins -0931 DDR3L-2133 Speed Bin CL-tRCD-tRP 14-14-14 Parameter Symbol Min Max tAA 13.09 20 tRCD 13.09 - ns PRECHARGE command period tRP 13.09 - ns ACTIVATE-to-ACTIVATE or REFRESH command period tRC 46.09 - ns tRAS 33 9 x tREFI ns 2 3.0 3.3 ns 3 ns 4 Internal READ command to first data ACTIVATE to internal READ or WRITE delay time ACTIVATE-to-PRECHARGE command period CL = 5 CL = 6 CL = 7 CL = 8 CL = 9 CL = 10 CL = 11 CL = 12 CL = 13 CL = 14 CWL = 5 (AVG) CWL = 6, 7, 8, 9 tCK (AVG) CWL = 5 tCK (AVG) ns 3 CWL = 6, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 5, 7, 8, 9 tCK (AVG) Reserved ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 5, 8, 9 tCK (AVG) ns 4 CWL = 6 tCK (AVG) ns 3 CWL = 7 tCK (AVG) Reserved ns 4 CWL = 5, 6, 8, 9 tCK (AVG) Reserved ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 5, 6, 9 tCK (AVG) ns 4 CWL = 7 tCK (AVG) ns 3 CWL = 8 tCK (AVG) ns 4 CWL = 5, 6, 7 tCK (AVG) ns 4 CWL = 8 tCK (AVG) ns 3 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) Reserved ns 4 CWL = 5, 6, 7, 8 tCK (AVG) Reserved ns 4 CWL = 9 tCK (AVG) 1.07 <1.25 ns 3 CWL = 5, 6, 7, 8, 9 tCK (AVG) Reserved Reserved ns 4 CWL = 10 tCK (AVG) 0.938 <1.07 ns 3 Supported CWL settings 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Notes tCK Supported CL settings Notes: Unit Reserved 2.5 3.3 1.875 <2.5 Reserved 1.875 1.5 <2.5 <1.875 Reserved 1.5 <1.875 Reserved Reserved 1.25 <1.5 5, 6, 7, 8, 9, 10, 11, 13, 14 CK 5, 6, 7, 8, 9 CK 1. The -093 speed grade is backward compatible with 1866, CL = 13 (-107) , 1600, CL = 11 (-125) , 1333, CL = 9 (-15E) and 1066, CL = 7 (-187E). 2. tREFI depends on TOPER. 3. The CL and CWL settings result in tCK requirements. When making a selection of tCK, both CL and CWL requirement settings need to be fulfilled. 4. Reserved settings are not allowed. 82 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Electrical Characteristics and AC Operating Conditions Table 58: Electrical Characteristics and AC Operating Conditions Notes 1-8 apply to the entire table DDR3L-800 Parameter Symbol Min Max DDR3L-1066 DDR3L-1333 DDR3L-1600 Min Max Min Max Min Max Unit Notes Clock Timing Clock period average: DLL disable mode TC 85C TC = >85C to 95C tCK 8 7800 8 7800 8 7800 8 7800 ns 9, 42 (DLL_DIS) 8 3900 8 3900 8 3900 8 3900 ns 42 Clock period average: DLL enable mode tCK (AVG) ns 10, 11 High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 0.47 0.53 CK 12 Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 0.47 0.53 CK 12 See Speed Bin Tables for tCK range allowed 0.53 DLL locked -100 100 -90 90 -80 80 -70 70 ps 13 DLL locking tJITper,lck -90 90 -80 80 -70 70 -60 60 ps 13 Clock absolute period tCK (ABS) MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper MAX Clock absolute high pulse width tCH (ABS) 0.43 Clock period jitter - 0.43 - 0.43 - 0.43 - ps tCK 14 83 (AVG) Clock absolute low pulse width tCL (ABS) 0.43 - 0.43 - 0.43 - 0.43 - tCK 15 (AVG) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Cycle-to-cycle jitter DLL locked tJITcc 200 180 160 140 ps 16 DLL locking tJITcc,lck 180 160 140 120 ps 16 Cumulative error across 2 cycles tERR2per -147 147 -132 132 -118 118 -103 103 ps 17 3 cycles tERR3per -175 175 -157 157 -140 140 -122 122 ps 17 4 cycles tERR4per -194 194 -175 175 -155 155 -136 136 ps 17 5 cycles tERR5per -209 209 -188 188 -168 168 -147 147 ps 17 6 cycles tERR6per -222 222 -200 200 -177 177 -155 155 ps 17 7 cycles tERR7per -232 232 -209 209 -186 186 -163 163 ps 17 8 cycles tERR8per -241 241 -217 217 -193 193 -169 169 ps 17 9 cycles tERR9per -249 249 -224 224 -200 200 -175 175 ps 17 10 cycles tERR10per -257 257 -231 231 -205 205 -180 180 ps 17 11 cycles tERR11per -263 263 -237 237 -210 210 -184 184 ps 17 12 cycles tERR12per -269 269 -242 242 -215 215 -188 188 ps 17 ps 17 n = 13, 14 . . . 49, 50 cycles tERRnper tERRnper tERRnper MIN = (1 + 0.68ln[n]) x tJITper MIN MAX = (1 + 0.68ln[n]) x tJITper MAX 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 0.47 tJITper 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 58: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3L-800 Parameter Symbol Min Max DDR3L-1066 DDR3L-1333 DDR3L-1600 Min Max Min Max Min Max Unit Notes - - - - - ps 18, 19, 44 DQ Input Timing Data setup time to DQS, DQS# Base (specification) tDS VREF @ 1 V/ns Data setup time to DQS, DQS# Base (specification) tDS - 40 250 - 200 - - - - - ps 19, 20 140 - 90 - 45 - 25 - ps 18, 19, 44 180 - 160 - ps 19, 20 (AC135) VREF @ 1 V/ns Base (specification) VREF @ 1 V/ns Minimum data pulse width 275 - 250 - tDH 160 - 110 - 75 - 55 - ps 18, 19 (DC90) 250 - 200 - 165 - 145 - ps 19, 20 tDIPW 600 - 490 - 400 - 360 - ps 41 150 - 125 - 100 ps - tCK DQ Output Timing DQS, DQS# to DQ skew, per access DQ output hold time from DQS, DQS# tDQSQ tQH - 0.38 200 - - 0.38 - 0.38 - 0.38 21 84 (AVG) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. DQ Low-Z time from CK, CK# tLZDQ -800 400 -600 300 -500 250 -450 225 ps 22, 23 DQ High-Z time from CK, CK# tHZDQ - 400 - 300 - 250 - 225 ps 22, 23 DQS, DQS# rising to CK, CK# rising tDQSS -0.25 0.25 -0.25 0.25 -0.25 0.25 -0.27 0.27 CK 25 DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK DQS, DQS# differential input high pulse width tDQSH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 CK DQS, DQS# falling setup to CK, CK# rising tDSS 0.2 - 0.2 - 0.2 - 0.18 - CK 25 DQS, DQS# falling hold from CK, CK# rising tDSH 0.2 - 0.2 - 0.2 - 0.18 - CK 25 DQS, DQS# differential WRITE preamble tWPRE 0.9 - 0.9 - 0.9 - 0.9 - CK DQS, DQS# differential WRITE postamble tWPST 0.3 - 0.3 - 0.3 - 0.3 - CK DQ Strobe Input Timing DQ Strobe Output Timing DQS, DQS# rising to/from rising CK, CK# tDQSCK -400 400 -300 300 -255 255 -225 225 ps 23 DQS, DQS# rising to/from rising CK, CK# when DLL is disabled tDQSCK 1 10 1 10 1 10 1 10 ns 26 (DLL_DIS) DQS, DQS# differential output high time tQSH 0.38 - 0.38 - 0.40 - 0.40 - CK 21 DQS, DQS# differential output low time tQSL 0.38 - 0.38 - 0.40 - 0.40 - CK 21 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Data hold time from DQS, DQS# 90 (AC160) 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 58: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3L-800 Parameter DDR3L-1066 DDR3L-1333 DDR3L-1600 Symbol Min Max Min Max Min Max Min Max Unit Notes DQS, DQS# Low-Z time (RL - 1) tLZDQS -800 400 -600 300 -500 250 -450 225 ps 22, 23 DQS, DQS# High-Z time (RL + BL/2) tHZDQS - 400 - 300 - 250 - 225 ps 22, 23 DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 0.9 Note 24 0.9 Note 24 CK 23, 24 DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 0.3 Note 27 0.3 Note 27 CK 23, 27 DLL locking time tDLLK 512 - 512 - 512 - 512 - CK 28 tIS 215 - 140 - 80 - 60 - ps 29, 30, 44 Command and Address Timing Base (specification) CTRL, CMD, ADDR setup to CK,CK# Base (specification) (AC160) VREF @ 1 V/ns tIS 85 - 300 - 240 - 220 - ps 20, 30 - 290 - 205 - 185 - ps 29, 30, 44 500 - 425 - 340 - 320 - ps 20, 30 285 - 210 - 150 - 130 - ps 29, 30, 44 375 - 300 - 240 - 220 - ps 20, 30 900 - 780 - 620 - 560 - ps 41 (AC135) VREF @ 1 V/ns CTRL, CMD, ADDR setup to CK,CK# 375 365 Base (specification) tIH (DC90 VREF @ 1 V/ns Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Minimum CTRL, CMD, ADDR pulse width tIPW ACTIVATE to internal READ or WRITE delay tRCD See Speed Bin Tables for tRCD ns 31 ns 31 tRP See Speed Bin Tables for tRP tRAS See Speed Bin Tables for tRAS ns 31, 32 tRC See Speed Bin Tables for tRC ns 31, 43 ACTIVATE-to-ACTIVATE x4/x8 (1KB page size) minimum command period x16 (2KB page size) tRRD MIN = greater of MIN = greater of MIN = greater of MIN = greater of 4CK or 10ns 4CK or 7.5ns 4CK or 6ns 4CK or 6ns CK 31 Four ACTIVATE windows tFAW PRECHARGE command period ACTIVATE-to-PRECHARGE command period ACTIVATE-to-ACTIVATE command period x4/x8 (1KB page size) x16 (2KB page size) Write recovery time Delay from start of internal WRITE transaction to internal READ command READ-to-PRECHARGE time MIN = greater of 4CK or 10ns MIN = greater of 4CK or 7.5ns CK 31 40 - 37.5 - 30 - 30 - ns 31 50 - 50 - 45 - 40 - ns 31 tWR MIN = 15ns; MAX = N/A ns 31, 32, 33,34 tWTR MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 34 tRTP MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 32 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions CTRL, CMD, ADDR setup to CK,CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 58: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3L-800 Parameter Symbol Min Max DDR3L-1066 DDR3L-1333 DDR3L-1600 Min Min Min Max Max Max Unit tCCD MIN = 4CK; MAX = N/A CK Auto precharge write recovery + precharge time tDAL MIN = WR + tRP/tCK (AVG); MAX = N/A CK MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = N/A CK MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = N/A CK MULTIPURPOSE REGISTER READ burst end to mode register set for multipurpose register exit tMPRR MIN = 1CK; MAX = N/A CK ZQCL command: Long calibration time tZQinit 512 tZQoper tZQCS Notes Calibration Timing POWER-UP and RESET operation Normal operation ZQCS command: Short calibration time - 512 - 512 256 - 64 - - 512 256 - 64 - - CK 256 - 256 - CK 64 - 64 - CK 86 Initialization and Reset Timing tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK tVDDPR MIN = N/A; MAX = 200 ms RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms RESET# LOW to I/O and RTT High-Z tIOZ MIN = N/A; MAX = 20 ns Exit reset from CKE HIGH to a valid command Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Begin power supply ramp to power supplies stable 35 Refresh Timing tRFC - 1Gb MIN = 110; MAX = 70,200 ns tRFC - 2Gb MIN = 160; MAX = 70,200 ns tRFC - 4Gb MIN = 260; MAX = 70,200 ns - 8Gb MIN = 350; MAX = 70,200 ns 64 (1X) ms 36 TC > 85C and 95C 32 (2X) ms 36 TC > 95C and 105C 16 (4X) ms 36 REFRESH-to-ACTIVATE or REFRESH command period tRFC Maximum refresh period TC 85C - 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions CAS#-to-CAS# command delay 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 58: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3L-800 Parameter Max DDR3L-1600 Min Min Min Unit Notes s 36 TC > 85C and 95C 3.9 (32ms/8192) s 36 TC > 95C and 105C 1.95 (16ms/8192) s 36 tXS MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK Exit self refresh to commands requiring a locked DLL tXSDLL MIN = tDLLK (MIN); MAX = N/A CK Minimum CKE low pulse width for self refresh entry to self refresh exit timing tCKESR MIN = tCKE (MIN) + CK; MAX = N/A CK Valid clocks after self refresh entry or powerdown entry tCKSRE MIN = greater of 5CK or 10ns; MAX = N/A CK Valid clocks before self refresh exit, power-down exit, or reset exit tCKSRX MIN = greater of 5CK or 10ns; MAX = N/A CK TC 85C Min DDR3L-1333 7.8 (64ms/8192) Maximum average periodic refresh Symbol DDR3L-1066 Max tREFI Max Max Self Refresh Timing Exit self refresh to commands not requiring a locked DLL 87 Power-Down Timing Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. CKE MIN pulse width Command pass disable delay Power-down entry to power-down exit timing tCKE (MIN) Greater of 3CK or 7.5ns Greater of 3CK or 5.625ns tCPDED tPD Greater of 3CK or 5.625ns Greater of 3CK or 5ns MIN = 1; MAX = N/A MIN = tCKE (MIN); MAX = 9 * tREFI CK CK CK tANPD WL - 1CK CK Power-down entry period: ODT either synchronous or asynchronous PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK Power-down exit period: ODT either synchronous or asynchronous PDX Begin power-down period prior to CKE registered HIGH tANPD + tXPDLL CK Power-Down Entry Minimum Timing ACTIVATE command to power-down entry tACTPDEN MIN = 1 CK PRECHARGE/PRECHARGE ALL command to power-down entry tPRPDEN MIN = 1 CK tREFPDEN MIN = 1 CK REFRESH command to power-down entry 37 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 28 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 58: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3L-800 Parameter Symbol Max DDR3L-1333 DDR3L-1600 Min Min Min Max Max Max Unit tMRSPDEN MIN = tMOD (MIN) CK tRDPDEN MIN = RL + 4 + 1 CK BL8 (OTF, MRS) BC4OTF tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK tWRAP- MIN = WL + 4 + WR + 1 CK MIN = WL + 2 + WR + 1 CK MRS command to power-down entry READ/READ with auto precharge command to power-down entry WRITE command to power-down entry Min DDR3L-1066 DEN tWRAP- DEN Power-Down Exit Timing DLL on, any valid command, or DLL off to commands not requiring locked DLL 88 Precharge power-down with DLL off to commands requiring a locked DLL tXP MIN = greater of 3CK or 7.5ns; MAX = N/A tXPDLL MIN = greater of 3CK or 6ns; MAX = N/A MIN = greater of 10CK or 24ns; MAX = N/A CK CK 28 ODT Timing Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. RTT synchronous turn-on delay ODTLon CWL + AL - 2CK CK 38 RTT synchronous turn-off delay ODTLoff CWL + AL - 2CK CK 40 RTT turn-on from ODTL on reference tAON -400 400 -300 RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 300 -250 250 -225 225 ps 23, 38 0.7 0.3 0.7 0.3 0.7 CK 39, 40 Asynchronous RTT turn-on delay (power-down with DLL off) tAONPD MIN = 2; MAX = 8.5 ns 38 Asynchronous RTT turn-off delay (power-down with DLL off) tAOFPD MIN = 2; MAX = 8.5 ns 40 ODT HIGH time with WRITE command and BL8 ODTH8 MIN = 6; MAX = N/A CK ODT HIGH time without WRITE command or with WRITE command and BC4 ODTH4 MIN = 4; MAX = N/A CK Dynamic ODT Timing RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 6CK + ODTLoff CK 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions BL8 (OTF, MRS) WRITE with auto precharge command to BC4OTF power-down entry BC4MRS Notes 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 58: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1-8 apply to the entire table DDR3L-800 Parameter RTT dynamic change skew DDR3L-1066 DDR3L-1333 DDR3L-1600 Symbol Min Max Min Max Min Max Min Max Unit Notes tADC 0.3 0.7 0.3 0.7 0.3 0.7 0.3 0.7 CK 39 Write Leveling Timing 40 - 40 - 40 - 40 - CK tWLDQSEN 25 - 25 - 25 - 25 - CK Write leveling setup from rising CK, CK# crossing to rising DQS, DQS# crossing tWLS 325 - 245 - 195 - 165 - ps Write leveling hold from rising DQS, DQS# crossing to rising CK, CK# crossing tWLH 325 - 245 - 195 - 165 - ps Write leveling output delay tWLO 0 9 0 9 0 9 0 7.5 ns Write leveling output error tWLOE 0 2 0 2 0 2 0 2 ns First DQS, DQS# rising edge DQS, DQS# delay 89 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions tWLMRD 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN AC timing parameters are valid from specified TC MIN to TC MAX values. All voltages are referenced to VSS. Output timings are only valid for RON34 output buffer selection. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation. The unit CK represents one clock cycle of the input clock, counting the actual clock edges. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC). All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the correct number of clocks (Table 58 (page 83) uses CK or tCK [AVG] interchangeably). In the case of noninteger results, all minimum limits are to be rounded up to the nearest whole integer, and all maximum limits are to be rounded down to the nearest whole integer. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is the rising edge. Clock or CK refers to the CK and CK# differential crossing point when CK is the rising edge. This output load is used for all AC timing (except ODT reference timing) and slew rates. The actual test load may be different. The output signal voltage reference point is VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure 31 (page 75)). When operating in DLL disable mode, Micron does not warrant compliance with normal mode timings or functionality. The clock's tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG) MIN is the smallest clock rate allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. Spread spectrum is not included in the jitter specification values. However, the input clock can accommodate spread-spectrum at a sweep rate in the range of 20-60 kHz with an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread spectrum may not use a clock rate below tCK (AVG) MIN. The clock's tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. The period jitter (tJITper) is the maximum deviation in the clock period from the average or nominal clock. It is allowed in either the positive or negative direction. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one rising edge to the following falling edge. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL locking time. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50, is the amount of clock time allowed to accumulate consecutively away from the average clock over n number of clock cycles. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs and 2 V/ns slew rate differential DQS, DQS#; when DQ single-ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns. 90 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing. 20. The setup and hold times are listed converting the base specification values (to which derating tables apply) to VREF when the slew rate is 1 V/ns. These values, with a slew rate of 1 V/ns, are for reference only. 21. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output deratings are relative to the SDRAM input clock). 22. Single-ended signal parameter. 23. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present, even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK (MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are required to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS (MAX), tLZDQ MAX, and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN). 24. The maximum preamble is bound by tLZDQS (MAX). 25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the amount of clock jitter applied, as these are relative to the clock signal crossing. These parameters should be met whether clock jitter is present. 26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command. 27. The maximum postamble is bound by tHZDQS (MAX). 28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met. 29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address slew rate and 2 V/ns CK, CK# differential slew rate. 30. These parameters are measured from a command/address signal transition edge to its respective clock (CK, CK#) signal crossing. The specification values are not affected by the amount of clock jitter applied as the setup and hold times are relative to the clock signal crossing that latches the command/address. These parameters should be met whether clock jitter is present. 31. For these parameters, the DDR3L SDRAM device supports tnPARAM (nCK) = RU(tPARAM [ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are valid even if six clocks are less than 15ns due to input clock jitter. 32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied. 33. When operating in DLL disable mode, the greater of 4CK or 15ns is satisfied for tWR. 34. The start of the write recovery time is defined as follows: * For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL * For BC4 (OTF): Rising clock edge four clock cycles after WL * For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL 35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity. 36. The refresh period is 64ms when TC is less than or equal to 85C. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands should be asserted at 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 91 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 37. 38. 39. 40. 41. 42. 43. 44. least once every 70.3s. When TC is greater than 85C, but less the 95C, the refresh period is 32ms. When TC is greater than 95C, but less the 105C, the refresh period is 16ms. Although CKE is allowed to be registered LOW after a REFRESH command when tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN) is required. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT reference load is shown in Figure 24 (page 63). This output load is used for ODT timings (see Figure 31 (page 75)).Designs that were created prior to JEDEC tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is shown in Figure 24 (page 63). This output load is used for ODT timings (see Figure 31 (page 75)). Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC). Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should have at least one NOP command between it and another AUTO REFRESH command. Additionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should be followed by a PRECHARGE ALL command. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in a reduction of REFRESH characteristics or product lifetime. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/ command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 92 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Electrical Characteristics and AC Operating Conditions Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions Notes 1-8 apply to the entire table DDR3L-1866 Parameter Symbol Min DDR3L-2133 Max Min Max Unit Notes Clock Timing Clock period average: DLL disable mode tCK 8 7800 8 7800 ns 9, 42 (DLL_DIS) 8 3900 8 3900 ns 42 TC = 0C to 85C TC = >85C to 95C Clock period average: DLL enable mode tCK (AVG) High pulse width average tCH (AVG) 0.47 0.53 0.47 0.53 CK 12 Low pulse width average tCL (AVG) 0.47 0.53 0.47 0.53 CK 12 range allowed ns 10, 11 93 DLL locked tJITper -60 60 -50 50 ps 13 DLL locking tJITper,lck -50 50 -40 40 ps 13 - tCK 14 Clock absolute period tCK (ABS) Clock absolute high pulse width tCH (ABS) MIN = tCK (AVG) MIN + tJITper MIN; MAX = tCK (AVG) MAX + tJITper MAX ps 0.43 - 0.43 (AVG) Clock absolute low pulse width tCL (ABS) 0.43 - 0.43 - tCK 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. (AVG) Cycle-to-cycle jitter DLL locked tJITcc 120 120 ps 16 DLL locking tJITcc,lck 100 100 ps 16 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Clock period jitter See Speed Bin Tables for tCK 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3L-1866 DDR3L-2133 Symbol Min Max Min Max Unit Notes Cumulative error across 2 cycles tERR2per -88 88 -74 74 ps 17 3 cycles tERR3per -105 105 -87 87 ps 17 4 cycles tERR4per -117 117 -97 97 ps 17 5 cycles tERR5per -126 126 -105 105 ps 17 6 cycles tERR6per -133 133 -111 111 ps 17 7 cycles tERR7per -139 139 -116 116 ps 17 8 cycles tERR8per -145 145 -121 121 ps 17 9 cycles tERR9per -150 150 -125 125 ps 17 10 cycles tERR10per -154 154 -128 128 ps 17 11 cycles tERR11per -158 158 -132 132 ps 17 12 cycles tERR12per -161 161 -134 134 94 n = 13, 14 . . . 49, 50 cycles tERRnper Base (specification) @ 2 V/ns tDS tERRnper MIN = (1 + 0.68ln[n]) x tJITper MIN tERRnper MAX = (1 + 0.68ln[n]) x tJITper MAX ps 17 ps 17 DQ Input Timing Data setup time to DQS, DQS# Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. VREF @ 2 V/ns Data hold time from DQS, DQS# Base (specification) @ 2 V/ns 70 - 55 - ps 18, 19 135 - 120.5 - ps 19, 20 75 - 60 - ps 18, 19 110 - 105 - ps 19, 20 320 - 280 - ps 41 85 - 75 ps - tCK (AC130) tDH (DC90) VREF @ 2 V/ns Minimum data pulse width tDIPW DQS, DQS# to DQ skew, per access tDQSQ DQ Output Timing DQ output hold time from DQS, DQS# tQH - 0.38 - 0.38 21 (AVG) DQ Low-Z time from CK, CK# tLZDQ -390 195 -360 180 ps 22, 23 DQ High-Z time from CK, CK# tHZDQ - 195 - 180 ps 22, 23 DQS, DQS# rising to CK, CK# rising tDQSS -0.27 0.27 -0.27 0.27 CK 25 DQS, DQS# differential input low pulse width tDQSL 0.45 0.55 0.45 0.55 CK DQ Strobe Input Timing 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Parameter 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3L-1866 Parameter DDR3L-2133 Symbol Min Max Min Max Unit tDQSH 0.45 0.55 0.45 0.55 CK DQS, DQS# falling setup to CK, CK# rising tDSS 0.18 - 0.18 - CK 25 DQS, DQS# falling hold from CK, CK# rising tDSH 0.18 - 0.18 - CK 25 DQS, DQS# differential WRITE preamble tWPRE 0.9 - 0.9 - CK DQS, DQS# differential WRITE postamble tWPST 0.3 - 0.3 - CK DQS, DQS# differential input high pulse width Notes DQ Strobe Output Timing tDQSCK -195 195 -180 180 ps 23 DQS, DQS# rising to/from rising CK, CK# when DLL is disabled tDQSCK 1 10 1 10 ns 26 (DLL_DIS) DQS, DQS# differential output high time tQSH 0.40 - 0.40 - CK 21 DQS, DQS# differential output low time tQSL 0.40 - 0.40 - CK 21 DQS, DQS# Low-Z time (RL - 1) tLZDQS -390 195 -360 180 ps 22, 23 DQS, DQS# High-Z time (RL + BL/2) tHZDQS - 195 - 180 ps 22, 23 DQS, DQS# differential READ preamble tRPRE 0.9 Note 24 0.9 Note 24 CK 23, 24 DQS, DQS# differential READ postamble tRPST 0.3 Note 27 0.3 Note 27 CK 23, 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Command and Address Timing DLL locking time CTRL, CMD, ADDR setup to CK,CK# Base (specification) tDLLK 512 - 512 - CK 28 tIS 65 - 60 - ps 29, 30, 44 200 - 195 - ps 20, 30 150 - 135 - ps 29, 30, 44 275 - 260 - ps 20, 30 110 - 105 - ps 29, 30 (AC135) VREF @ 1 V/ns CTRL, CMD, ADDR setup to CK,CK# Base (specification) tIS (AC125) VREF @ 1 V/ns CTRL, CMD, ADDR hold Base (specification) from CK,CK# VREF @ 1 V/ns tIH (DC90) 200 - 195 - ps 20, 30 Minimum CTRL, CMD, ADDR pulse width tIPW 535 - 470 - ps 41 ACTIVATE to internal READ or WRITE delay tRCD PRECHARGE command period ACTIVATE-to-PRECHARGE command period ACTIVATE-to-ACTIVATE command period ns 31 tRP See Speed Bin Tables for tRP ns 31 tRAS See Speed Bin Tables for tRAS ns 31, 32 ns 31, 43 tRC See Speed Bin Tables for tRCD See Speed Bin Tables for tRC 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 95 DQS, DQS# rising to/from rising CK, CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3L-1866 Parameter Symbol ACTIVATE-to-ACTIVATE 1KB page size minimum command pe- 2KB page size riod tRRD Four ACTIVATE windows tFAW 1KB page size 2KB page size Min DDR3L-2133 Unit Notes MIN = greater of 4CK or 5ns Max CK 31 MIN = greater of 4CK or 6ns CK 31 31 27 Max - 25 - ns - 35 - 31 MIN = 15ns; MAX = N/A ns 31, 32, 33 tWTR MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 34 READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = N/A CK 31, 32 CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = N/A CK Auto precharge write recovery + precharge time tDAL MIN = WR + tRP/tCK (AVG); MAX = N/A CK MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = N/A CK MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = N/A CK MULTIPURPOSE REGISTER READ burst end to mode register set for multipurpose register exit tMPRR MIN = 1CK; MAX = N/A CK ZQCL command: Long calibration time tZQinit MIN = N/A MAX = MAX(512nCK, 640ns) CK tZQoper MIN = N/A MAX = max(256nCK, 320ns) CK Delay from start of internal WRITE transaction to internal READ command 96 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Calibration Timing POWER-UP and RESET operation Normal operation ZQCS command: Short calibration time MIN = N/A MAX = max(64nCK, 80ns) tZQCS CK Initialization and Reset Timing Exit reset from CKE HIGH to a valid command Begin power supply ramp to power supplies stable tXPR MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK tVDDPR MIN = N/A; MAX = 200 ms RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms RESET# LOW to I/O and RTT High-Z tIOZ MIN = N/A; MAX = 20 ns Refresh Timing 35 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions ns tWR Write recovery time 35 Min 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3L-1866 Parameter Symbol REFRESH-to-ACTIVATE or REFRESH command period Maximum refresh period Max Min Max Unit tRFC - 1Gb MIN = 110; MAX = 70,200 ns tRFC - 2Gb MIN = 160; MAX = 70,200 ns Notes tRFC - 4Gb MIN = 260; MAX = 70,200 ns tRFC - 8Gb MIN = 350; MAX = 70,200 ns 64 (1X) ms 36 TC > 85C and 95C 32 (2X) ms 36 TC > 95C and 105C 16 (4X) ms 36 TC 85C TC 85C - tREFI s 36 3.9 (32ms/8192) s 36 TC > 95C and 105C 1.95 (16ms/8192) s 36 tXS MIN = greater of 5CK or tRFC + 10ns; MAX = N/A CK Exit self refresh to commands requiring a locked DLL tXSDLL MIN = tDLLK (MIN); MAX = N/A CK Minimum CKE low pulse width for self refresh entry to self refresh exit timing tCKESR MIN = tCKE (MIN) + CK; MAX = N/A CK Valid clocks after self refresh entry or powerdown entry tCKSRE MIN = greater of 5CK or 10ns; MAX = N/A CK Valid clocks before self refresh exit, power-down exit, or reset exit tCKSRX MIN = greater of 5CK or 10ns; MAX = N/A CK 97 7.8 (64ms/8192) TC > 85C and 95C Self Refresh Timing Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Exit self refresh to commands not requiring a locked DLL Power-Down Timing CKE MIN pulse width Command pass disable delay Power-down entry to power-down exit timing tCKE Greater of 3CK or 5ns CK tCPDED (MIN) MIN = 2; MAX = N/A CK tPD MIN = tCKE (MIN); MAX = 9 * tREFI CK 28 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Maximum average periodic refresh Min DDR3L-2133 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3L-1866 Parameter Symbol Min DDR3L-2133 Max Min Max Unit tANPD WL - 1CK CK Power-down entry period: ODT either synchronous or asynchronous PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK Power-down exit period: ODT either synchronous or asynchronous PDX Begin power-down period prior to CKE registered HIGH tANPD + tXPDLL Notes CK Power-Down Entry Minimum Timing MIN = 2 CK PRECHARGE/PRECHARGE ALL command to power-down entry tPRPDEN MIN = 2 CK REFRESH command to power-down entry tREFPDEN MIN = 2 CK MRS command to power-down entry tMRSPDEN tMOD MIN = (MIN) CK 98 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. READ/READ with auto precharge command to power-down entry tRDPDEN MIN = RL + 4 + 1 CK WRITE command to power-down entry BL8 (OTF, MRS) BC4OTF tWRPDEN MIN = WL + 4 + tWR/tCK (AVG) CK BC4MRS tWRPDEN MIN = WL + 2 + tWR/tCK (AVG) CK BL8 (OTF, MRS) BC4OTF tWRAP- MIN = WL + 4 + WR + 1 CK BC4MRS tWRAP- MIN = WL + 2 + WR + 1 CK WRITE with auto precharge command to power-down entry 37 DEN DEN Power-Down Exit Timing DLL on, any valid command, or DLL off to commands not requiring locked DLL Precharge power-down with DLL off to commands requiring a locked DLL tXP MIN = greater of 3CK or 6ns; MAX = N/A CK tXPDLL MIN = greater of 10CK or 24ns; MAX = N/A CK 28 CK 38 ODT Timing RTT synchronous turn-on delay ODTL on RTT synchronous turn-off delay ODTL off CWL + AL - 2CK CK 40 RTT turn-on from ODTL on reference tAON -195 195 CWL + AL - 2CK -180 180 ps 23, 38 RTT turn-off from ODTL off reference tAOF 0.3 0.7 0.3 0.7 CK 39, 40 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions ACTIVATE command to power-down entry tACTPDEN 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 59: Electrical Characteristics and AC Operating Conditions for Speed Extensions (Continued) Notes 1-8 apply to the entire table DDR3L-1866 Min DDR3L-2133 Parameter Symbol Unit Notes Asynchronous RTT turn-on delay (power-down with DLL off) tAONPD Max MIN = 2; MAX = 8.5 Min Max ns 38 Asynchronous RTT turn-off delay (power-down with DLL off) tAOFPD MIN = 2; MAX = 8.5 ns 40 ODT HIGH time with WRITE command and BL8 ODTH8 MIN = 6; MAX = N/A CK ODT HIGH time without WRITE command or with WRITE command and BC4 ODTH4 MIN = 4; MAX = N/A CK RTT,nom-to-RTT(WR) change skew ODTLcnw WL - 2CK CK RTT(WR)-to-RTT,nom change skew - BC4 ODTLcwn4 4CK + ODTLoff CK RTT(WR)-to-RTT,nom change skew - BL8 ODTLcwn8 RTT dynamic change skew tADC 6CK + ODTLoff 0.3 0.7 CK 0.3 0.7 CK 99 Write Leveling Timing tWLMRD 40 - 40 - CK tWLDQSEN 25 - 25 - CK Write leveling setup from rising CK, CK# crossing to rising DQS, DQS# crossing tWLS 140 - 125 - ps Write leveling hold from rising DQS, DQS# crossing to rising CK, CK# crossing tWLH 140 - 125 - ps Write leveling output delay tWLO 0 7.5 0 7 ns Write leveling output error tWLOE 0 2 0 2 ns First DQS, DQS# rising edge DQS, DQS# delay 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Dynamic ODT Timing 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN AC timing parameters are valid from specified TC MIN to TC MAX values. All voltages are referenced to VSS. Output timings are only valid for RON34 output buffer selection. The unit tCK (AVG) represents the actual tCK (AVG) of the input clock under operation. The unit CK represents one clock cycle of the input clock, counting the actual clock edges. AC timing and IDD tests may use a VIL-to-VIH swing of up to 900mV in the test environment, but input timing is still referenced to VREF (except tIS, tIH, tDS, and tDH use the AC/DC trip points and CK, CK# and DQS, DQS# use their crossing points). The minimum slew rate for the input signals used to test the device is 1 V/ns for single-ended inputs (DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns for differential inputs in the range between VIL(AC) and VIH(AC). All timings that use time-based values (ns, s, ms) should use tCK (AVG) to determine the correct number of clocks (Table 59 (page 93) uses CK or tCK [AVG] interchangeably). In the case of noninteger results, all minimum limits are to be rounded up to the nearest whole integer, and all maximum limits are to be rounded down to the nearest whole integer. Strobe or DQSdiff refers to the DQS and DQS# differential crossing point when DQS is the rising edge. Clock or CK refers to the CK and CK# differential crossing point when CK is the rising edge. This output load is used for all AC timing (except ODT reference timing) and slew rates. The actual test load may be different. The output signal voltage reference point is VDDQ/2 for single-ended signals and the crossing point for differential signals (see Figure 31 (page 75)). When operating in DLL disable mode, Micron does not warrant compliance with normal mode timings or functionality. The clock's tCK (AVG) is the average clock over any 200 consecutive clocks and tCK (AVG) MIN is the smallest clock rate allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. Spread spectrum is not included in the jitter specification values. However, the input clock can accommodate spread-spectrum at a sweep rate in the range of 20-60 kHz with an additional 1% of tCK (AVG) as a long-term jitter component; however, the spread spectrum may not use a clock rate below tCK (AVG) MIN. The clock's tCH (AVG) and tCL (AVG) are the average half clock period over any 200 consecutive clocks and is the smallest clock half period allowed, with the exception of a deviation due to clock jitter. Input clock jitter is allowed provided it does not exceed values specified and must be of a random Gaussian distribution in nature. The period jitter (tJITper) is the maximum deviation in the clock period from the average or nominal clock. It is allowed in either the positive or negative direction. tCH (ABS) is the absolute instantaneous clock high pulse width as measured from one rising edge to the following falling edge. tCL (ABS) is the absolute instantaneous clock low pulse width as measured from one falling edge to the following rising edge. The cycle-to-cycle jitter tJITcc is the amount the clock period can deviate from one cycle to the next. It is important to keep cycle-to-cycle jitter at a minimum during the DLL locking time. The cumulative jitter error tERRnper, where n is the number of clocks between 2 and 50, is the amount of clock time allowed to accumulate consecutively away from the average clock over n number of clock cycles. tDS (base) and tDH (base) values are for a single-ended 1 V/ns slew rate DQs (DQs are at 2V/ns for DDR3-1866 and DDR3-2133) and 2 V/ns slew rate differential DQS, DQS#; when DQ single-ended slew rate is 2V/ns, the DQS differential slew rate is 4V/ns. 100 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 19. These parameters are measured from a data signal (DM, DQ0, DQ1, and so forth) transition edge to its respective data strobe signal (DQS, DQS#) crossing. 20. The setup and hold times are listed converting the base specification values (to which derating tables apply) to VREF when the slew rate is 1 V/ns (DQs are at 2V/ns for DDR3-1866 and DDR3-2133). These values, with a slew rate of 1 V/ns (DQs are at 2V/ns for DDR3-1866 and DDR3-2133), are for reference only. 21. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJITper (larger of tJITper (MIN) or tJITper (MAX) of the input clock (output deratings are relative to the SDRAM input clock). 22. Single-ended signal parameter. 23. The DRAM output timing is aligned to the nominal or average clock. Most output parameters must be derated by the actual jitter error when input clock jitter is present, even when within specification. This results in each parameter becoming larger. The following parameters are required to be derated by subtracting tERR10per (MAX): tDQSCK (MIN), tLZDQS (MIN), tLZDQ (MIN), and tAON (MIN). The following parameters are required to be derated by subtracting tERR10per (MIN): tDQSCK (MAX), tHZ (MAX), tLZDQS (MAX), tLZDQ (MAX), and tAON (MAX). The parameter tRPRE (MIN) is derated by subtracting tJITper (MAX), while tRPRE (MAX) is derated by subtracting tJITper (MIN). 24. The maximum preamble is bound by tLZDQS (MAX). 25. These parameters are measured from a data strobe signal (DQS, DQS#) crossing to its respective clock signal (CK, CK#) crossing. The specification values are not affected by the amount of clock jitter applied, as these are relative to the clock signal crossing. These parameters should be met whether clock jitter is present. 26. The tDQSCK (DLL_DIS) parameter begins CL + AL - 1 cycles after the READ command. 27. The maximum postamble is bound by tHZDQS (MAX). 28. Commands requiring a locked DLL are: READ (and RDAP) and synchronous ODT commands. In addition, after any change of latency tXPDLL, timing must be met. 29. tIS (base) and tIH (base) values are for a single-ended 1 V/ns control/command/address slew rate and 2 V/ns CK, CK# differential slew rate. 30. These parameters are measured from a command/address signal transition edge to its respective clock (CK, CK#) signal crossing. The specification values are not affected by the amount of clock jitter applied as the setup and hold times are relative to the clock signal crossing that latches the command/address. These parameters should be met whether clock jitter is present. 31. For these parameters, the DDR3L SDRAM device supports tnPARAM (nCK) = RU(tPARAM [ns]/tCK[AVG] [ns]), assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP (nCK) = RU(tRP/tCK[AVG]) if all input clock jitter specifications are met. This means that for DDR3-800 6-6-6, of which tRP = 5ns, the device will support tnRP = RU(tRP/tCK[AVG]) = 6 as long as the input clock jitter specifications are met. That is, the PRECHARGE command at T0 and the ACTIVATE command at T0 + 6 are valid even if six clocks are less than 15ns due to input clock jitter. 32. During READs and WRITEs with auto precharge, the DDR3 SDRAM will hold off the internal PRECHARGE command until tRAS (MIN) has been satisfied. 33. When operating in DLL disable mode, the greater of 5CK or 15ns is satisfied for tWR. 34. The start of the write recovery time is defined as follows: * For BL8 (fixed by MRS or OTF): Rising clock edge four clock cycles after WL * For BC4 (OTF): Rising clock edge four clock cycles after WL * For BC4 (fixed by MRS): Rising clock edge two clock cycles after WL 35. RESET# should be LOW as soon as power starts to ramp to ensure the outputs are in High-Z. Until RESET# is LOW, the outputs are at risk of driving and could result in excessive current, depending on bus activity. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 101 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Electrical Characteristics and AC Operating Conditions 36. The refresh period is 64ms when TC is less than or equal to 85C. This equates to an average refresh rate of 7.8125s. However, nine REFRESH commands should be asserted at least once every 70.3s. When TC is greater than 85C, but less the 95C, the refresh period is 32ms. When TC is greater than 95C, but less the 105C, the refresh period is 16ms. 37. Although CKE is allowed to be registered LOW after a REFRESH command when tREFPDEN (MIN) is satisfied, there are cases where additional time such as tXPDLL (MIN) is required. 38. ODT turn-on time MIN is when the device leaves High-Z and ODT resistance begins to turn on. ODT turn-on time maximum is when the ODT resistance is fully on. The ODT reference load is shown in Figure 24 (page 63). This output load is used for ODT timings (see Figure 31 (page 75)).Designs that were created prior to JEDEC tightening the maximum limit from 9ns to 8.5ns will be allowed to have a 9ns maximum. 39. Half-clock output parameters must be derated by the actual tERR10per and tJITdty when input clock jitter is present. This results in each parameter becoming larger. The parameters tADC (MIN) and tAOF (MIN) are each required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). The parameters tADC (MAX) and tAOF (MAX) are required to be derated by subtracting both tERR10per (MAX) and tJITdty (MAX). 40. ODT turn-off time minimum is when the device starts to turn off ODT resistance. ODT turn-off time maximum is when the DRAM buffer is in High-Z. The ODT reference load is shown in Figure 24 (page 63). This output load is used for ODT timings (see Figure 31 (page 75)). 41. Pulse width of a input signal is defined as the width between the first crossing of VREF(DC) and the consecutive crossing of VREF(DC). 42. Should the clock rate be larger than tRFC (MIN), an AUTO REFRESH command should have at least one NOP command between it and another AUTO REFRESH command. Additionally, if the clock rate is slower than 40ns (25 MHz), all REFRESH commands should be followed by a PRECHARGE ALL command. 43. DRAM devices should be evenly addressed when being accessed. Disproportionate accesses to a particular row address may result in a reduction of REFRESH characteristics or product lifetime. 44. When two VIH(AC) values (and two corresponding VIL(AC) values) are listed for a specific speed bin, the user may choose either value for the input AC level. Whichever value is used, the associated setup time for that AC level must also be used. Additionally, one VIH(AC) value may be used for address/command inputs and the other VIH(AC) value may be used for data inputs. For example, for DDR3-800, two input AC levels are defined: VIH(AC175),min and VIH(AC150),min (corresponding VIL(AC175),min and VIL(AC150),min). For DDR3-800, the address/ command inputs must use either VIH(AC175),min with tIS(AC175) of 200ps or VIH(AC150),min with tIS(AC150) of 350ps; independently, the data inputs must use either VIH(AC175),min with tDS(AC175) of 75ps or VIH(AC150),min with tDS(AC150) of 125ps. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 102 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Command and Address Setup, Hold, and Derating The total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS (base) and tIH (base) values (see Table 60; values come from the Electrical Characteristics and AC Operating Conditions table) to the tIS and tIH derating values (see Table 61 (page 104), Table 62 (page 104) or Table 63 (page 104)) respectively. Example: tIS (total setup time) = tIS (base) + tIS. For a valid transition, the input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 64 (page 105)). Although the total setup time for slow slew rates might be negative (for example, a valid input signal will not have reached V IH(AC)/VIL(AC) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach VIH(AC)/VIL(AC) (see Figure 15 (page 53) for input signal requirements). For slew rates that fall between the values listed in Table 61 (page 104) and Table 63 (page 104), the derating values may be obtained by linear interpolation. Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derating value (see Figure 34 (page 106)). If the actual signal is later than the nominal slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent line to the actual signal from the AC level to the DC level is used for derating value (see Figure 36 (page 108)). Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and the first crossing of V REF(DC). If the actual signal is always later than the nominal slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derating value (see Figure 35 (page 107)). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent line to the actual signal from the DC level to the V REF(DC) level is used for derating value (see Figure 37 (page 109)). Table 60: DDR3L Command and Address Setup and Hold Values 1 V/ns Referenced - AC/DC-Based Symbol tIS(base, 800 1066 1333 1600 1866 2133 Unit Reference - - ps VIH(AC)/VIL(AC) AC160) 215 140 80 60 tIS(base, AC135) 365 290 205 185 65 60 ps VIH(AC)/VIL(AC) tIS(base, AC125) - - - - 150 135 ps VIH(AC)/VIL(AC) 285 210 150 130 110 105 ps VIH(DC)/VIL(DC) tIH(base, DC90) 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 103 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Table 61: DDR3L-800/1066 Derating Values tIS/tIH - AC160/DC90-Based tIS, tIH Derating (ps) - AC/DC-Based CMD/ADDR 4.0 V/ns Slew Rate V/ns tIS tIH CK, CK# Differential Slew Rate 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns tIS tIH tIS tIH tIS tIH tIS tIH tIS 1.2 V/ns tIH tIS 1.0 V/ns tIH tIS tIH 2.0 80 45 80 45 80 45 88 53 96 61 104 69 112 79 120 95 1.5 53 30 53 30 53 30 61 38 69 46 77 54 85 64 93 80 1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 -1 -3 -1 -3 -1 -3 7 5 15 13 23 21 31 31 39 47 0.8 -3 -8 -3 -8 -3 -8 5 1 13 9 21 17 29 27 37 43 0.7 -5 -13 -5 -13 -5 -13 3 -5 11 3 19 11 27 21 35 37 0.6 -8 -20 -8 -20 -8 -20 0 -12 8 -4 16 4 24 14 32 30 0.5 -20 -30 -20 -30 -20 -30 -12 -22 -4 -14 4 -6 12 4 20 20 0.4 -40 -45 -40 -45 -40 -45 -32 -37 -24 -29 -16 -21 -8 -11 0 5 Table 62: DDR3L-800/1066/1333/1600 Derating Values for tIS/tIH - AC135/DC90-Based tIS, tIH Derating (ps) - AC/DC-Based CMD/ADDR 4.0 V/ns Slew Rate V/ns tIS tIH CK, CK# Differential Slew Rate 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH 2.0 68 45 68 45 68 45 76 53 84 61 92 69 100 79 108 95 1.5 45 30 45 30 45 30 53 38 61 46 69 54 77 64 85 80 1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 2 -3 2 -3 2 -3 10 5 18 13 26 21 34 31 42 47 0.8 3 -8 3 -8 3 -8 11 1 19 9 27 17 35 27 43 43 0.7 6 -13 6 -13 6 -13 14 -5 22 3 30 11 38 21 46 37 0.6 9 -20 9 -20 9 -20 17 -12 25 -4 33 4 41 14 49 30 0.5 5 -30 5 -30 5 -30 13 -22 21 -14 29 -6 37 4 45 20 0.4 -3 -45 -3 -45 -3 -45 6 -37 14 -29 22 -21 30 -11 38 5 Table 63: DDR3L-1866/2133 Derating Values for tIS/tIH - AC125/DC90-Based tIS, tIH Derating (ps) - AC/DC-Based CMD/ADDR 4.0 V/ns Slew Rate V/ns tIS tIH CK, CK# Differential Slew Rate 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH 2.0 63 45 63 45 63 45 71 53 79 61 87 69 95 79 103 95 1.5 42 30 42 30 42 30 50 38 58 46 66 54 74 64 82 80 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 104 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Table 63: DDR3L-1866/2133 Derating Values for tIS/tIH - AC125/DC90-Based (Continued) tIS, tIH Derating (ps) - AC/DC-Based CMD/ADDR 4.0 V/ns Slew Rate V/ns tIS tIH CK, CK# Differential Slew Rate 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH tIS tIH 1.0 0 0 0 0 0 0 8 8 16 16 24 24 32 34 40 50 0.9 3 -3 3 -3 3 -3 11 5 19 13 27 21 35 31 43 47 0.8 6 -8 6 -8 6 -8 14 1 22 9 30 17 38 27 46 43 0.7 10 -13 10 -13 10 -13 18 -5 26 3 34 11 42 21 50 37 0.6 16 -20 16 -20 16 -20 24 -12 32 -4 40 4 48 14 56 30 0.5 15 -30 15 -30 15 -30 23 -22 31 -14 39 -6 47 4 55 20 0.4 13 -45 13 -45 13 -45 21 -37 29 -29 37 -21 45 -11 53 5 Table 64: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL[AC]) for Valid ADD/CMD Transition DDR3L-800/1066/1333/1600 Slew Rate (V/ns) tVAC at 160mV (ps) tVAC DDR3L-1866/2133 at 135mV (ps) tVAC at 135mV (ps) tVAC at 125mV (ps) >2.0 200 213 200 205 2.0 200 213 200 205 1.5 173 190 178 184 1.0 120 145 133 143 0.9 102 130 118 129 0.8 80 111 99 111 0.7 51 87 75 89 0.6 13 55 43 59 0.5 Note 1 10 Note 1 18 <0.5 Note 1 10 Note 1 18 Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input signal shall become equal to or less than VIL(AC) level. 105 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Figure 34: Nominal Slew Rate and tVAC for tIS (Command and Address - Clock) tIS tIH tIS tIH CK CK# DQS# DQS VDDQ tVAC VIH(AC)min VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max tVAC VSS TF Setup slew rate falling signal = Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN TR VREF(DC) - VIL(AC)max Setup slew rate rising signal = TF VIH(AC)min - VREF(DC) TR 1. The clock and the strobe are drawn on different time scales. 106 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Figure 35: Nominal Slew Rate for tIH (Command and Address - Clock) tIS tIS tIH tIH CK CK# DQS# DQS VDDQ VIH(AC)min VIH(DC)min Nominal slew rate DC to VREF region VREF(DC) Nominal slew rate DC to VREF region VIL(DC)max VIL(AC)max VSS TF TR VREF(DC) - VIL(DC)max Hold slew rate rising signal = TR Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN VIH(DC)min - VREF(DC) Hold slew rate falling signal = TF 1. The clock and the strobe are drawn on different time scales. 107 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Figure 36: Tangent Line for tIS (Command and Address - Clock) tIS tIS tIH tIH CK CK# DQS# DQS VDDQ Nominal line tVAC VIH(AC)min VREF to AC region VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max VREF to AC region VIL(AC)max Nominal line tVAC TR VSS Tangent line (VIH(DC)min - VREF(DC)) Setup slew rate rising signal = TR TF Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Tangent line (VREF(DC) - VIL(AC)max) Setup slew rate falling signal = TF 1. The clock and the strobe are drawn on different time scales. 108 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Command and Address Setup, Hold, and Derating Figure 37: Tangent Line for tIH (Command and Address - Clock) tIS tIH tIS tIH CK CK# DQS# DQS VDDQ VIH(AC)min Nominal line VIH(DC)min DC to VREF region Tangen t line VREF(DC) DC to VREF region Tangen t line Nominal line VIL( DC)max VIL( AC)max VSS TR TR Tangent line (VREF(DC) - VIL(DC)max) Hold slew rate rising signal = TR Tangent line (VIH(DC)min - VREF(DC)) Hold slew rate falling signal = TF Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. The clock and the strobe are drawn on different time scales. 109 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Data Setup, Hold, and Derating The total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS (base) and tDH (base) values (see Table 65 (page 110); values come from the Electrical Characteristics and AC Operating Conditions table) to the tDS and tDH derating values (see Table 66 (page 111), Table 67 (page 111), or Table 68 (page 112)) respectively. Example: tDS (total setup time) = tDS (base) + tDS. For a valid transition, the input signal has to remain above/below V IH(AC)/VIL(AC) for some time tVAC (see Table 69 (page 113)). Although the total setup time for slow slew rates might be negative (for example, a valid input signal will not have reached V IH(AC)/VIL(AC)) at the time of the rising clock transition), a valid input signal is still required to complete the transition and to reach VIH/VIL(AC). For slew rates that fall between the values listed in Table 66 (page 111), Table 67 (page 111), or Table 68 (page 112), the derating values may obtained by linear interpolation. Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IH(AC)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V REF(DC) and the first crossing of V IL(AC)max. If the actual signal is always earlier than the nominal slew rate line between the shaded V REF(DC)-to-AC region, use the nominal slew rate for derating value (see Figure 38 (page 114)). If the actual signal is later than the nominal slew rate line anywhere between the shaded V REF(DC)-to-AC region, the slew rate of a tangent line to the actual signal from the AC level to the DC level is used for derating value (see Figure 40 (page 116)). Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of V IL(DC)max and the first crossing of V REF(DC). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of V IH(DC)min and the first crossing of V REF(DC). If the actual signal is always later than the nominal slew rate line between the shaded DC-to-VREF(DC) region, use the nominal slew rate for derating value (see Figure 39 (page 115)). If the actual signal is earlier than the nominal slew rate line anywhere between the shaded DC-to-VREF(DC) region, the slew rate of a tangent line to the actual signal from the DC-to-VREF(DC) region is used for derating value (see Figure 41 (page 117)). Table 65: DDR3L Data Setup and Hold Values at 1 V/ns (DQS, DQS# at 2 V/ns) - AC/DC-Based Symbol tDS tDS tDS 800 1066 1333 1600 1866 2133 Unit Reference (base) AC160 90 40 - - - - ps VIH(AC)/VIL(AC) (base) AC135 140 90 45 25 - - ps (base) AC130 - - - - 70 55 ps tDH (base) DC90 160 110 75 55 - - ps tDH (base) DC90 - - - - 75 60 ps 1 1 1 1 2 2 V/ns Slew Rate Referenced 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 110 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Table 66: DDR3L Derating Values for tDS/tDH - AC160/DC90-Based tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate DQ Slew Rate V/ns 4.0 V/ns tDS tDH 3.0 V/ns tDS 2.0 V/ns tDH tDS tDH 1.8 V/ns tDS tDH 1.6 V/ns tDS tDH 1.4 V/ns tDS tDH 1.2 V/ns tDS tDH 1.0 V/ns tDS tDH 2.0 80 45 80 45 80 45 1.5 53 30 53 30 53 30 61 38 1.0 0 0 0 0 0 0 8 8 16 16 -1 -3 -1 -3 7 5 15 13 23 21 -3 -8 5 1 13 9 21 17 29 27 -3 -5 11 3 19 11 27 21 35 37 8 -4 16 4 24 14 32 30 4 6 12 4 20 20 -8 -11 0 5 0.9 0.8 0.7 0.6 0.5 0.4 Table 67: DDR3L Derating Values for tDS/tDH - AC135/DC90-Based tDS, tDH Derating (ps) - AC/DC-Based DQS, DQS# Differential Slew Rate DQ Slew Rate V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 2.0 68 45 68 45 68 45 1.5 45 30 45 30 45 30 53 38 1.0 0 0 0 0 0 0 8 8 16 16 2 -3 2 -3 10 5 18 13 26 21 3 -8 11 1 19 9 27 17 35 27 14 -5 22 3 30 11 38 21 46 37 25 -4 33 4 41 14 49 30 39 -6 37 4 45 20 30 -11 38 5 0.9 0.8 0.7 0.6 0.5 0.4 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 111 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Shaded cells indicate slew rate combinations not supported tDS, tDH Derating (ps) - AC/DC-Based DQ Slew Rate V/ns 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 68: DDR3L Derating Values for tDS/tDH - AC130/DC90-Based at 2V/ns DQS, DQS# Differential Slew Rate 8.0 V/ns 7.0 V/ns 6.0 V/ns 5.0 V/ns 4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4 V/ns 1.2 V/ns 1.0 V/ns tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 4.0 33 23 33 23 33 23 3.5 28 19 28 19 28 19 28 19 3.0 22 15 22 15 22 15 22 15 22 15 13 9 13 9 13 9 13 9 13 9 0 0 0 0 0 0 0 0 0 0 -22 -15 -22 -15 -22 -15 -22 -15 -14 -7 -65 -45 -38 -24 2.5 2.0 1.5 1.0 112 0.9 0.8 0.7 0.5 0.4 -45 -65 -45 -57 -37 -49 -29 -48 -62 -48 -54 -40 -46 -32 -61 -53 -53 -45 -45 -37 -37 -29 -29 -19 -49 -50 -41 -42 -33 -34 -25 -24 -17 -8 -37 -49 -29 -41 -21 -31 -13 -15 -31 -51 -23 -41 -15 -25 -28 -56 -20 -40 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 0.6 -65 -62 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Table 69: DDR3L Minimum Required Time tVAC Above VIH(AC) (Below VIL(AC)) for Valid DQ Transition Slew Rate (V/ns) DDR3L-800/1066 160mV (ps) min DDR3L-800/1066/1333 135mV (ps) min DDR3L-1866/2133 130mV (ps) min >2.0 165 113 95 2.0 165 113 95 1.5 138 90 73 1.0 85 45 30 0.9 67 30 16 0.8 45 11 Note 1 0.7 16 Note 1 - 0.6 Note 1 Note 1 - 0.5 Note 1 Note 1 - <0.5 Note 1 Note 1 - Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Rising input signal shall become equal to or greater than VIH(AC) level and Falling input signal shall become equal to or less than VIL(AC) level. 113 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Figure 38: Nominal Slew Rate and tVAC for tDS (DQ - Strobe) CK CK# DQS# DQS tDS tDH tDS tDH VDDQ tVAC VIH(AC)min VREF to AC region VIH(DC)min Nominal slew rate VREF(DC) Nominal slew rate VIL(DC)max VREF to AC region VIL(AC)max tVAC VSS TF Setup slew rate = falling signal Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN TR VIH(AC)min - VREF(DC) Setup slew rate = rising signal TR VREF(DC) - VIL(AC)max TF 1. The clock and the strobe are drawn on different time scales. 114 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Figure 39: Nominal Slew Rate for tDH (DQ - Strobe) CK CK# DQS# DQS tDS tDS tDH tDH VDDQ VIH(AC)min VIH(DC)min Nominal slew rate DC to VREF region VREF(DC) Nominal slew rate DC to VREF region VIL(DC)max VIL(AC)max VSS TR VIL(DC)min - VREF(DC) Hold slew rate falling signal = TF VREF(DC) - VIL(DC)max Hold slew rate rising signal = TR Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN TF 1. The clock and the strobe are drawn on different time scales. 115 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Figure 40: Tangent Line for tDS (DQ - Strobe) CK CK# DQS# DQS tDS tDS tDH tDH VDDQ Nominal line tVAC VIH(AC)min VREF to AC region VIH(DC)min Tangent line VREF(DC) Tangent line VIL(DC)max VREF to AC region VIL(AC)max Nominal line TR tVAC VSS Setup slew rate Tangent line (VIH(AC)min - VREF(DC)) rising signal = TR TF Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Setup slew rate Tangent line (VREF(DC) - VIL(AC)max) falling signal = TF 1. The clock and the strobe are drawn on different time scales. 116 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Data Setup, Hold, and Derating Figure 41: Tangent Line for tDH (DQ - Strobe) CK CK# DQS# DQS tDS tDH tDS tDH VDDQ VIH(AC)min Nominal line VIH(DC)min DC to VREF region Tangent line VREF(DC) DC to VREF region Tangent line Nominal line VIL(DC)max VIL(AC)max VSS TR Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN TF Hold slew rate rising signal = Tangent line (VREF(DC) - VIL(DC)max) Hold slew rate falling signal = Tangent line (VIH(DC)min - VREF(DC)) TR TF 1. The clock and the strobe are drawn on different time scales. 117 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands - Truth Tables Commands - Truth Tables Table 70: Truth Table - Command Notes 1-5 apply to the entire table CKE Symbol Prev. Cycle MODE REGISTER SET MRS H H L L L L BA REFRESH REF H H L L L H V V V V V Self refresh entry SRE H L L L L H V V V V V 6 Self refresh exit SRX L H H V V V V V V V V 6, 7 L H H H V V L V V H V Function Single-bank PRECHARGE Next BA Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 A[11, 9:0] Notes OP code PRE H H L L H L BA PRECHARGE all banks PREA H H L L H L V Bank ACTIVATE ACT H H L L H H BA WRITE BL8MRS, BC4MRS WR H H L H L L BA RFU V L CA 8 BC4OTF WRS4 H H L H L L BA RFU L L CA 8 BL8OTF WRS8 H H L H L L BA RFU H L CA 8 BL8MRS, BC4MRS WRAP H H L H L L BA RFU V H CA 8 BC4OTF WRAPS4 H H L H L L BA RFU L H CA 8 BL8OTF WRAPS8 H H L H L L BA RFU H H CA 8 BL8MRS, BC4MRS RD H H L H L H BA RFU V L CA 8 BC4OTF RDS4 H H L H L H BA RFU L L CA 8 BL8OTF RDS8 H H L H L H BA RFU H L CA 8 BL8MRS, BC4MRS RDAP H H L H L H BA RFU V H CA 8 BC4OTF RDAPS4 H H L H L H BA RFU L H CA 8 BL8OTF WRITE with auto precharge READ READ with auto precharge Row address (RA) RDAPS8 H H L H L H BA RFU H H CA 8 NO OPERATION NOP H H L H H H V V V V V 9 Device DESELECTED DES H H H X X X X X X X X 10 Power-down entry PDE H L L H H H V V V V V 6 Power-down exit PDX L H V V V V V 6, 11 12 H V V V L H H H H V V V ZQ CALIBRATION LONG ZQCL H H L H H L X X X H X ZQ CALIBRATION SHORT ZQCS H H L H H L X X X L X Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 1. Commands are defined by the states of CS#, RAS#, CAS#, WE#, and CKE at the rising edge of the clock. The MSB of BA, RA, and CA are device-, density-, and configurationdependent. 118 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands - Truth Tables 2. RESET# is enabled LOW and used only for asynchronous reset. Thus, RESET# must be held HIGH during any normal operation. 3. The state of ODT does not affect the states described in this table. 4. Operations apply to the bank defined by the bank address. For MRS, BA selects one of four mode registers. 5. "V" means "H" or "L" (a defined logic level), and "X" means "Don't Care." 6. See Table 71 (page 120) for additional information on CKE transition. 7. Self refresh exit is asynchronous. 8. Burst READs or WRITEs cannot be terminated or interrupted. MRS (fixed) and OTF BL/BC are defined in MR0. 9. The purpose of the NOP command is to prevent the DRAM from registering any unwanted commands. A NOP will not terminate an operation that is executing. 10. The DES and NOP commands perform similarly. 11. The power-down mode does not perform any REFRESH operations. 12. ZQ CALIBRATION LONG is used for either ZQinit (first ZQCL command during initialization) or ZQoper (ZQCL command after initialization). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 119 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands - Truth Tables Table 71: Truth Table - CKE Notes 1-2 apply to the entire table; see Table 70 (page 118) for additional command details CKE Current State3 Power-down Previous Cycle4 Present Cycle4 Command5 (n - 1) (n) (RAS#, CAS#, WE#, CS#) Action5 L L "Don't Care" Maintain power-down L H DES or NOP Power-down exit Self refresh L L "Don't Care" Maintain self refresh L H DES or NOP Self refresh exit Bank(s) active H L DES or NOP Active power-down entry Reading H L DES or NOP Power-down entry Writing H L DES or NOP Power-down entry Precharging H L DES or NOP Power-down entry Refreshing H L DES or NOP Precharge power-down entry All banks idle H L DES or NOP Precharge power-down entry H L REFRESH Self refresh Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Notes 6 1. All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document. 2. tCKE (MIN) means CKE must be registered at multiple consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the required number of registration clocks. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + tCKE (MIN) + tIH. 3. Current state = The state of the DRAM immediately prior to clock edge n. 4. CKE (n) is the logic state of CKE at clock edge n; CKE (n - 1) was the state of CKE at the previous clock edge. 5. COMMAND is the command registered at the clock edge (must be a legal command as defined in Table 70 (page 118)). Action is a result of COMMAND. ODT does not affect the states described in this table and is not listed. 6. Idle state = All banks are closed, no data bursts are in progress, CKE is HIGH, and all timings from previous operations are satisfied. All self refresh exit and power-down exit parameters are also satisfied. 120 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands Commands DESELECT The DESELT (DES) command (CS# HIGH) prevents new commands from being executed by the DRAM. Operations already in progress are not affected. NO OPERATION The NO OPERATION (NOP) command (CS# LOW) prevents unwanted commands from being registered during idle or wait states. Operations already in progress are not affected. ZQ CALIBRATION LONG The ZQ CALIBRATION LONG (ZQCL) command is used to perform the initial calibration during a power-up initialization and reset sequence (see Figure 50 (page 137)). This command may be issued at any time by the controller, depending on the system environment. The ZQCL command triggers the calibration engine inside the DRAM. After calibration is achieved, the calibrated values are transferred from the calibration engine to the DRAM I/O, which are reflected as updated RON and ODT values. The DRAM is allowed a timing window defined by either tZQinit or tZQoper to perform a full calibration and transfer of values. When ZQCL is issued during the initialization sequence, the timing parameter tZQinit must be satisfied. When initialization is complete, subsequent ZQCL commands require the timing parameter tZQoper to be satisfied. ZQ CALIBRATION SHORT The ZQ CALIBRATION SHORT (ZQCS) command is used to perform periodic calibrations to account for small voltage and temperature variations. A shorter timing window is provided to perform the reduced calibration and transfer of values as defined by timing parameter tZQCS. A ZQCS command can effectively correct a minimum of 0.5% RON and RTT impedance error within 64 clock cycles, assuming the maximum sensitivities specified in DDR3L 34 Ohm Output Driver Sensitivity (page 69). ACTIVATE The ACTIVATE command is used to open (or activate) a row in a particular bank for a subsequent access. The value on the BA[2:0] inputs selects the bank, and the address provided on inputs A[n:0] selects the row. This row remains open (or active) for accesses until a PRECHARGE command is issued to that bank. A PRECHARGE command must be issued before opening a different row in the same bank. READ The READ command is used to initiate a burst read access to an active row. The address provided on inputs A[2:0] selects the starting column address, depending on the burst length and burst type selected (see Burst Order table for additional information). The value on input A10 determines whether auto precharge is used. If auto precharge is selected, the row being accessed will be precharged at the end of the READ burst. If auto 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 121 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands precharge is not selected, the row will remain open for subsequent accesses. The value on input A12 (if enabled in the mode register) when the READ command is issued determines whether BC4 (chop) or BL8 is used. After a READ command is issued, the READ burst may not be interrupted. Table 72: READ Command Summary CKE Function READ READ with auto precharge Symbol Prev. Cycle Next BA Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 A[11, 9:0] BL8MRS, BC4MRS RD H L H L H BA RFU V L CA BC4OTF RDS4 H L H L H BA RFU L L CA BL8OTF RDS8 H L H L H BA RFU H L CA BL8MRS, BC4MRS RDAP H L H L H BA RFU V H CA BC4OTF RDAPS4 H L H L H BA RFU L H CA BL8OTF RDAPS8 H L H L H BA RFU H H CA WRITE The WRITE command is used to initiate a burst write access to an active row. The value on the BA[2:0] inputs selects the bank. The value on input A10 determines whether auto precharge is used. The value on input A12 (if enabled in the MR) when the WRITE command is issued determines whether BC4 (chop) or BL8 is used. Input data appearing on the DQ is written to the memory array subject to the DM input logic level appearing coincident with the data. If a given DM signal is registered LOW, the corresponding data will be written to memory. If the DM signal is registered HIGH, the corresponding data inputs will be ignored and a WRITE will not be executed to that byte/column location. Table 73: WRITE Command Summary CKE Function WRITE WRITE with auto precharge Symbol Prev. Cycle Next BA Cycle CS# RAS# CAS# WE# [2:0] An A12 A10 A[11, 9:0] BL8MRS, BC4MRS WR H L H L L BA RFU V L CA BC4OTF WRS4 H L H L L BA RFU L L CA BL8OTF WRS8 H L H L L BA RFU H L CA BL8MRS, BC4MRS WRAP H L H L L BA RFU V H CA BC4OTF WRAPS4 H L H L L BA RFU L H CA BL8OTF WRAPS8 H L H L L BA RFU H H CA 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 122 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands PRECHARGE The PRECHARGE command is used to de-activate the open row in a particular bank or in all banks. The bank(s) are available for a subsequent row access a specified time ( tRP) after the PRECHARGE command is issued, except in the case of concurrent auto precharge. A READ or WRITE command to a different bank is allowed during a concurrent auto precharge as long as it does not interrupt the data transfer in the current bank and does not violate any other timing parameters. Input A10 determines whether one or all banks are precharged. In the case where only one bank is precharged, inputs BA[2:0] select the bank; otherwise, BA[2:0] are treated as "Don't Care." After a bank is precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued to that bank. A PRECHARGE command is treated as a NOP if there is no open row in that bank (idle state) or if the previously open row is already in the process of precharging. However, the precharge period is determined by the last PRECHARGE command issued to the bank. REFRESH The REFRESH command is used during normal operation of the DRAM and is analogous to CAS#-before-RAS# (CBR) refresh or auto refresh. This command is nonpersistent, so it must be issued each time a refresh is required. The addressing is generated by the internal refresh controller. This makes the address bits a "Don't Care" during a REFRESH command. The DRAM requires REFRESH cycles at an average interval of 7.8s (maximum when T C 85C or 3.9s maximum when T C 95C). The REFRESH period begins when the REFRESH command is registered and ends tRFC (MIN) later. To allow for improved efficiency in scheduling and switching between tasks, some flexibility in the absolute refresh interval is provided. A maximum of eight REFRESH commands can be posted to any given DRAM, meaning that the maximum absolute interval between any REFRESH command and the next REFRESH command is nine times the maximum average interval refresh rate. Self refresh may be entered with up to eight REFRESH commands being posted. After exiting self refresh (when entered with posted REFRESH commands), additional posting of REFRESH commands is allowed to the extent that the maximum number of cumulative posted REFRESH commands (both preand post-self refresh) does not exceed eight REFRESH commands. At any given time, a maximum of 16 REFRESH commands can be issued within 2 x tREFI. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 123 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands Figure 42: Refresh Mode T0 T2 T1 CK# CK tCK T3 tCH T4 Ta1 Valid 5 NOP1 PRE Tb0 Tb1 Valid 5 Valid 5 NOP5 NOP5 Tb2 tCL CKE Command Ta0 NOP1 NOP1 REF NOP5 REF2 Address ACT RA All banks A10 RA One bank BA[2:0] Bank(s)3 BA DQS, DQS#4 DQ4 DM4 tRP tRFC (MIN) tRFC2 Indicates break in time scale Notes: Don't Care 1. NOP commands are shown for ease of illustration; other valid commands may be possible at these times. CKE must be active during the PRECHARGE, ACTIVATE, and REFRESH commands, but may be inactive at other times (see Power-Down Mode (page 187)). 2. The second REFRESH is not required, but two back-to-back REFRESH commands are shown. 3. "Don't Care" if A10 is HIGH at this point; however, A10 must be HIGH if more than one bank is active (must precharge all active banks). 4. For operations shown, DM, DQ, and DQS signals are all "Don't Care"/High-Z. 5. Only NOP and DES commands are allowed after a REFRESH command and until tRFC (MIN) is satisfied. SELF REFRESH The SELF REFRESH command is used to retain data in the DRAM, even if the rest of the system is powered down. When in self refresh mode, the DRAM retains data without external clocking. Self refresh mode is also a convenient method used to enable/disable the DLL as well as to change the clock frequency within the allowed synchronous operating range (see Input Clock Frequency Change (page 129)). All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self refresh mode under the following conditions: * * * * 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN VSS < V REFDQ < V DD is maintained VREFDQ is valid and stable prior to CKE going back HIGH The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid All other self refresh mode exit timing requirements are met 124 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands DLL Disable Mode If the DLL is disabled by the mode register (MR1[0] can be switched during initialization or later), the DRAM is targeted, but not guaranteed, to operate similarly to the normal mode, with a few notable exceptions: * The DRAM supports only one value of CAS latency (CL = 6) and one value of CAS WRITE latency (CWL = 6). * DLL disable mode affects the read data clock-to-data strobe relationship (tDQSCK), but not the read data-to-data strobe relationship (tDQSQ, tQH). Special attention is required to line up the read data with the controller time domain when the DLL is disabled. * In normal operation (DLL on), tDQSCK starts from the rising clock edge AL + CL cycles after the READ command. In DLL disable mode, tDQSCK starts AL + CL - 1 cycles after the READ command. Additionally, with the DLL disabled, the value of tDQSCK could be larger than tCK. The ODT feature (including dynamic ODT) is not supported during DLL disable mode. The ODT resistors must be disabled by continuously registering the ODT ball LOW by programming RTT,nom MR1[9, 6, 2] and RTT(WR) MR2[10, 9] to 0 while in the DLL disable mode. Specific steps must be followed to switch between the DLL enable and DLL disable modes due to a gap in the allowed clock rates between the two modes (tCK [AVG] MAX and tCK [DLL_DIS] MIN, respectively). The only time the clock is allowed to cross this clock rate gap is during self refresh mode. Thus, the required procedure for switching from the DLL enable mode to the DLL disable mode is to change frequency during self refresh: 1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT is turned off, and RTT,nom and RTT(WR) are High-Z), set MR1[0] to 1 to disable the DLL. 2. Enter self refresh mode after tMOD has been satisfied. 3. After tCKSRE is satisfied, change the frequency to the desired clock rate. 4. Self refresh may be exited when the clock is stable with the new frequency for tCKSRX. After tXS is satisfied, update the mode registers with appropriate values. 5. The DRAM will be ready for its next command in the DLL disable mode after the greater of tMRD or tMOD has been satisfied. A ZQCL command should be issued with appropriate timings met. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 125 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands Figure 43: DLL Enable Mode to DLL Disable Mode T0 T1 Ta0 Ta1 Tb0 Tc0 Td0 Td1 Te0 Te1 Tf0 CK# CK Valid1 CKE MRS2 Command 6 SRE3 NOP SRX4 NOP 7 tCKSRE tMOD tCKSRX8 NOP tXS MRS5 NOP Valid1 tMOD tCKESR ODT9 Valid1 Indicates break in time scale Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. Don't Care Any valid command. Disable DLL by setting MR1[0] to 1. Enter SELF REFRESH. Exit SELF REFRESH. Update the mode registers with the DLL disable parameters setting. Starting with the idle state, RTT is in the High-Z state. Change frequency. Clock must be stable tCKSRX. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH. A similar procedure is required for switching from the DLL disable mode back to the DLL enable mode. This also requires changing the frequency during self refresh mode (see Figure 44 (page 127)). 1. Starting from the idle state (all banks are precharged, all timings are fulfilled, ODT is turned off, and RTT,nom and RTT(WR) are High-Z), enter self refresh mode. 2. After tCKSRE is satisfied, change the frequency to the new clock rate. 3. Self refresh may be exited when the clock is stable with the new frequency for tCKSRX. After tXS is satisfied, update the mode registers with the appropriate values. At a minimum, set MR1[0] to 0 to enable the DLL. Wait tMRD, then set MR0[8] to 1 to enable DLL RESET. 4. After another tMRD delay is satisfied, update the remaining mode registers with the appropriate values. 5. The DRAM will be ready for its next command in the DLL enable mode after the greater of tMRD or tMOD has been satisfied. However, before applying any command or function requiring a locked DLL, a delay of tDLLK after DLL RESET must be satisfied. A ZQCL command should be issued with the appropriate timings met. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 126 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands Figure 44: DLL Disable Mode to DLL Enable Mode T0 Ta0 Ta1 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Tg0 Th0 CK# CK CKE Valid tDLLK Command SRE1 NOP SRX2 NOP tCKSRE 7 8 tCKSRX9 MRS3 tXS MRS4 tMRD MRS5 Valid 6 tMRD ODTLoff + 1 x tCK tCKESR ODT10 Indicates break in time scale Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Don't Care Enter SELF REFRESH. Exit SELF REFRESH. Wait tXS, then set MR1[0] to 0 to enable DLL. Wait tMRD, then set MR0[8] to 1 to begin DLL RESET. Wait tMRD, update registers (CL, CWL, and write recovery may be necessary). Wait tMOD, any valid command. Starting with the idle state. Change frequency. Clock must be stable at least tCKSRX. Static LOW in the case that RTT,nom or RTT(WR) is enabled; otherwise, static LOW or HIGH. The clock frequency range for the DLL disable mode is specified by the parameter tCK (DLL_DIS). Due to latency counter and timing restrictions, only CL = 6 and CWL = 6 are supported. DLL disable mode will affect the read data clock to data strobe relationship (tDQSCK) but not the data strobe to data relationship (tDQSQ, tQH). Special attention is needed to line up read data to the controller time domain. Compared to the DLL on mode where tDQSCK starts from the rising clock edge AL + CL cycles after the READ command, the DLL disable mode tDQSCK starts AL + CL - 1 cycles after the READ command. WRITE operations function similarly between the DLL enable and DLL disable modes; however, ODT functionality is not allowed with DLL disable mode. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 127 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Commands Figure 45: DLL Disable tDQSCK T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address Valid CK# CK RL = AL + CL = 6 (CL = 6, AL = 0) CL = 6 DQS, DQS# DLL on DI b DQ BL8 DLL on RL (DLL_DIS) = AL + (CL - 1) = 5 DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 tDQSCK (DLL_DIS) MIN DQS, DQS# DLL off DI b DQ BL8 DLL disable DI b+1 tDQSCK DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 DI b+3 DI b+4 DI b+5 DI b+6 (DLL_DIS) MAX DQS, DQS# DLL off DI b DQ BL8 DLL disable DI b+1 DI b+2 DI b+7 Transitioning Data Don't Care Table 74: READ Electrical Characteristics, DLL Disable Mode Parameter Access window of DQS from CK, CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Symbol tDQSCK 128 (DLL_DIS) Min Max Unit 1 10 ns Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Input Clock Frequency Change Input Clock Frequency Change When the DDR3 SDRAM is initialized, the clock must be stable during most normal states of operation. This means that after the clock frequency has been set to the stable state, the clock period is not allowed to deviate, except for what is allowed by the clock jitter and spread spectrum clocking (SSC) specifications. The input clock frequency can be changed from one stable clock rate to another under two conditions: self refresh mode and precharge power-down mode. It is illegal to change the clock frequency outside of those two modes. For the self refresh mode condition, when the DDR3 SDRAM has been successfully placed into self refresh mode and tCKSRE has been satisfied, the state of the clock becomes a "Don't Care." When the clock becomes a "Don't Care," changing the clock frequency is permissible if the new clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode for the sole purpose of changing the clock frequency, the self refresh entry and exit specifications must still be met. The precharge power-down mode condition is when the DDR3 SDRAM is in precharge power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode, and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW before the clock frequency can change. The DDR3 SDRAM input clock frequency is allowed to change only within the minimum and maximum operating frequency specified for the particular speed grade (tCK [AVG] MIN to tCK [AVG] MAX). During the input clock frequency change, CKE must be held at a stable LOW level. When the input clock frequency is changed, a stable clock must be provided to the DRAM tCKSRX before precharge power-down may be exited. After precharge power-down is exited and tXP has been satisfied, the DLL must be reset via the MRS. Depending on the new clock frequency, additional MRS commands may need to be issued. During the DLL lock time, RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is ready to operate with a new clock frequency. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 129 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Input Clock Frequency Change Figure 46: Change Frequency During Precharge Power-Down Previous clock frequency T0 T1 T2 New clock frequency Ta0 Tb0 Tc1 Tc0 Td0 Td1 Te0 Te1 CK# CK tCH tCH b tCL tCKSRE tIS tCL b tCH b tCK b tCL b tCK b tCKSRX tCKE tIH CKE tIS tCPDED Command tCH b tCK b tCK tIH tCL b NOP NOP NOP NOP NOP Address MRS NOP Valid DLL RESET tAOFPD/tAOF tXP Valid tIH tIS ODT DQS, DQS# High-Z DQ High-Z DM tDLLK Enter precharge power-down mode Frequency change Exit precharge power-down mode Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. Applicable for both SLOW-EXIT and FAST-EXIT precharge power-down modes. 2. tAOFPD and tAOF must be satisfied and outputs High-Z prior to T1 (see On-Die Termination (ODT) (page 197)for exact requirements). 3. If the RTT,nom feature was enabled in the mode register prior to entering precharge power-down mode, the ODT signal must be continuously registered LOW, ensuring RTT is in an off state. If the RTT,nom feature was disabled in the mode register prior to entering precharge power-down mode, RTT will remain in the off state. The ODT signal can be registered LOW or HIGH in this case. 130 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Write Leveling Write Leveling For better signal integrity, DDR3 SDRAM memory modules have adopted fly-by topology for the commands, addresses, control signals, and clocks. Write leveling is a scheme for the memory controller to adjust or de-skew the DQS strobe (DQS, DQS#) to CK relationship at the DRAM with a simple feedback feature provided by the DRAM. Write leveling is generally used as part of the initialization process, if required. For normal DRAM operation, this feature must be disabled. This is the only DRAM operation where the DQS functions as an input (to capture the incoming clock) and the DQ function as outputs (to report the state of the clock). Note that nonstandard ODT schemes are required. The memory controller using the write leveling procedure must have adjustable delay settings on its DQS strobe to align the rising edge of DQS to the clock at the DRAM pins. This is accomplished when the DRAM asynchronously feeds back the CK status via the DQ bus and samples with the rising edge of DQS. The controller repeatedly delays the DQS strobe until a CK transition from 0 to 1 is detected. The DQS delay established by this procedure helps ensure tDQSS, tDSS, and tDSH specifications in systems that use fly-by topology by de-skewing the trace length mismatch. A conceptual timing of this procedure is shown in Figure 47. Figure 47: Write Leveling Concept T0 T1 T2 T3 T4 T5 T6 T7 CK# CK Source Differential DQS Tn T0 T1 T2 T3 T4 T5 T6 T4 T5 T6 CK# CK Destination Differential DQS 0 DQ Destination Tn T0 T1 0 T2 T3 CK# CK Push DQS to capture 0-1 transition Differential DQS DQ 1 1 Don't Care When write leveling is enabled, the rising edge of DQS samples CK, and the prime DQ outputs the sampled CK's status. The prime DQ for a x4 or x8 configuration is DQ0 with 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 131 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Write Leveling all other DQ (DQ[7:1]) driving LOW. The prime DQ for a x16 configuration is DQ0 for the lower byte and DQ8 for the upper byte. It outputs the status of CK sampled by LDQS and UDQS. All other DQ (DQ[7:1], DQ[15:9]) continue to drive LOW. Two prime DQ on a x16 enable each byte lane to be leveled independently. The write leveling mode register interacts with other mode registers to correctly configure the write leveling functionality. Besides using MR1[7] to disable/enable write leveling, MR1[12] must be used to enable/disable the output buffers. The ODT value, burst length, and so forth need to be selected as well. This interaction is shown in Table 75. It should also be noted that when the outputs are enabled during write leveling mode, the DQS buffers are set as inputs, and the DQ are set as outputs. Additionally, during write leveling mode, only the DQS strobe terminations are activated and deactivated via the ODT ball. The DQ remain disabled and are not affected by the ODT ball. Table 75: Write Leveling Matrix Note 1 applies to the entire table MR1[7] MR1[12] MR1[2, 6, 9] Write Leveling Output Buffers RTT,nom Value Disabled Enabled (1) DRAM RTT,nom DRAM ODT Ball DQS DQ See normal operations Disabled (1) Write leveling not enabled 0 DQS not receiving: not terminated Prime DQ High-Z: not terminated Other DQ High-Z: not terminated 1 Low Off , or 120 High On DQS not receiving: terminated by RTT Prime DQ High-Z: not terminated Other DQ High-Z: not terminated 2 n/a Low Off DQS receiving: not terminated Prime DQ driving CK state: not terminated Other DQ driving LOW: not terminated 3 , or 120 High On DQS receiving: terminated by RTT Prime DQ driving CK state: not terminated Other DQ driving LOW: not terminated 4 Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Case Notes n/a Enabled (0) Off DRAM State 2 3 1. Expected usage if used during write leveling: Case 1 may be used when DRAM are on a dual-rank module and on the rank not being leveled or on any rank of a module not being leveled on a multislot system. Case 2 may be used when DRAM are on any rank of a module not being leveled on a multislot system. Case 3 is generally not used. Case 4 is generally used when DRAM are on the rank that is being leveled. 2. Since the DRAM DQS is not being driven (MR1[12] = 1), DQS ignores the input strobe, and all RTT,nom values are allowed. This simulates a normal standby state to DQS. 3. Since the DRAM DQS is being driven (MR1[12] = 0), DQS captures the input strobe, and only some RTT,nom values are allowed. This simulates a normal write state to DQS. 132 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Write Leveling Write Leveling Procedure A memory controller initiates the DRAM write leveling mode by setting MR1[7] to 1, assuming the other programable features (MR0, MR1, MR2, and MR3) are first set and the DLL is fully reset and locked. The DQ balls enter the write leveling mode going from a High-Z state to an undefined driving state, so the DQ bus should not be driven. During write leveling mode, only the NOP or DES commands are allowed. The memory controller should attempt to level only one rank at a time; thus, the outputs of other ranks should be disabled by setting MR1[12] to 1 in the other ranks. The memory controller may assert ODT after a tMOD delay, as the DRAM will be ready to process the ODT transition. ODT should be turned on prior to DQS being driven LOW by at least ODTLon delay (WL - 2 tCK), provided it does not violate the aforementioned tMOD delay requirement. The memory controller may drive DQS LOW and DQS# HIGH after tWLDQSEN has been satisfied. The controller may begin to toggle DQS after tWLMRD (one DQS toggle is DQS transitioning from a LOW state to a HIGH state with DQS# transitioning from a HIGH state to a LOW state, then both transition back to their original states). At a minimum, ODTLon and tAON must be satisfied at least one clock prior to DQS toggling. After tWLMRD and a DQS LOW preamble (tWPRE) have been satisfied, the memory controller may provide either a single DQS toggle or multiple DQS toggles to sample CK for a given DQS-to-CK skew. Each DQS toggle must not violate tDQSL (MIN) and tDQSH (MIN) specifications. tDQSL (MAX) and tDQSH (MAX) specifications are not applicable during write leveling mode. The DQS must be able to distinguish the CK's rising edge within tWLS and tWLH. The prime DQ will output the CK's status asynchronously from the associated DQS rising edge CK capture within tWLO. The remaining DQ that always drive LOW when DQS is toggling must be LOW within tWLOE after the first tWLO is satisfied (the prime DQ going LOW). As previously noted, DQS is an input and not an output during this process. Figure 48 (page 134) depicts the basic timing parameters for the overall write leveling procedure. The memory controller will most likely sample each applicable prime DQ state and determine whether to increment or decrement its DQS delay setting. After the memory controller performs enough DQS toggles to detect the CK's 0-to-1 transition, the memory controller should lock the DQS delay setting for that DRAM. After locking the DQS setting is locked, leveling for the rank will have been achieved, and the write leveling mode for the rank should be disabled or reprogrammed (if write leveling of another rank follows). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 133 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Write Leveling Figure 48: Write Leveling Sequence T1 T2 tWLS tWLH CK# CK Command MRS1 NOP2 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP tMOD ODT tWLDQSEN tDQSL3 tDQSH3 tDQSL3 tDQSH3 Differential DQS4 tWLMRD tWLO tWLO Prime DQ5 tWLO tWLOE Early remaining DQ tWLO Late remaining DQ Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Undefined Driving Mode Don't Care 1. MRS: Load MR1 to enter write leveling mode. 2. NOP: NOP or DES. 3. DQS, DQS# needs to fulfill minimum pulse width requirements tDQSH (MIN) and tDQSL (MIN) as defined for regular writes. The maximum pulse width is system-dependent. 4. Differential DQS is the differential data strobe (DQS, DQS#). Timing reference points are the zero crossings. The solid line represents DQS; the dotted line represents DQS#. 5. DRAM drives leveling feedback on a prime DQ (DQ0 for x4 and x8). The remaining DQ are driven LOW and remain in this state throughout the leveling procedure. 134 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Write Leveling Write Leveling Mode Exit Procedure After the DRAM are leveled, they must exit from write leveling mode before the normal mode can be used. Figure 49 depicts a general procedure for exiting write leveling mode. After the last rising DQS (capturing a 1 at T0), the memory controller should stop driving the DQS signals after tWLO (MAX) delay plus enough delay to enable the memory controller to capture the applicable prime DQ state (at ~Tb0). The DQ balls become undefined when DQS no longer remains LOW, and they remain undefined until tMOD after the MRS command (at Te1). The ODT input should be de-asserted LOW such that ODTLoff (MIN) expires after the DQS is no longer driving LOW. When ODT LOW satisfies tIS, ODT must be kept LOW (at ~Tb0) until the DRAM is ready for either another rank to be leveled or until the normal mode can be used. After DQS termination is switched off, write level mode should be disabled via the MRS command (at Tc2). After tMOD is satisfied (at Te1), any valid command may be registered by the DRAM. Some MRS commands may be issued after tMRD (at Td1). Figure 49: Write Leveling Exit Procedure T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Tc2 NOP NOP NOP NOP NOP NOP NOP MRS Td0 Td1 Te0 Te1 NOP Valid NOP Valid CK# CK Command tMRD Address MR1 tIS Valid Valid tMOD ODT t ODTLoff AOF (MIN) RTT,nom RTT DQS, RTT DQS# t AOF (MAX) DQS, DQS# RTT(DQ) tWLO DQ + tWLOE CK = 1 Indicates break in time scale Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Undefined Driving Mode Transitioning Don't Care 1. The DQ result, = 1, between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing CK HIGH just after the T0 state. 135 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Initialization Initialization The following sequence is required for power-up and initialization, as shown in Figure 50 (page 137): 1. Apply power. RESET# is recommended to be below 0.2 x V DDQ during power ramp to ensure the outputs remain disabled (High-Z) and ODT off (RTT is also High-Z). All other inputs, including ODT, may be undefined. During power-up, either of the following conditions may exist and must be met: 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN * Condition A: - VDD and V DDQ are driven from a single-power converter output and are ramped with a maximum delta voltage between them of V 300mV. Slope reversal of any power supply signal is allowed. The voltage levels on all balls other than V DD, V DDQ, V SS, V SSQ must be less than or equal to V DDQ and V DD on one side, and must be greater than or equal to V SSQ and V SS on the other side. - Both V DD and V DDQ power supplies ramp to V DD,min and V DDQ,min within tV DDPR = 200ms. - VREFDQ tracks V DD x 0.5, V REFCA tracks V DD x 0.5. - VTT is limited to 0.95V when the power ramp is complete and is not applied directly to the device; however, tVTD should be greater than or equal to 0 to avoid device latchup. * Condition B: - VDD may be applied before or at the same time as V DDQ. - VDDQ may be applied before or at the same time as V TT, V REFDQ, and V REFCA. - No slope reversals are allowed in the power supply ramp for this condition. Until stable power, maintain RESET# LOW to ensure the outputs remain disabled (High-Z). After the power is stable, RESET# must be LOW for at least 200s to begin the initialization process. ODT will remain in the High-Z state while RESET# is LOW and until CKE is registered HIGH. CKE must be LOW 10ns prior to RESET# transitioning HIGH. After RESET# transitions HIGH, wait 500s (minus one clock) with CKE LOW. After the CKE LOW time, CKE may be brought HIGH (synchronously) and only NOP or DES commands may be issued. The clock must be present and valid for at least 10ns (and a minimum of five clocks) and ODT must be driven LOW at least tIS prior to CKE being registered HIGH. When CKE is registered HIGH, it must be continuously registered HIGH until the full initialization process is complete. After CKE is registered HIGH and after tXPR has been satisfied, MRS commands may be issued. Issue an MRS (LOAD MODE) command to MR2 with the applicable settings (provide LOW to BA2 and BA0 and HIGH to BA1). Issue an MRS command to MR3 with the applicable settings. Issue an MRS command to MR1 with the applicable settings, including enabling the DLL and configuring ODT. Issue an MRS command to MR0 with the applicable settings, including a DLL RESET command. tDLLK (512) cycles of clock input are required to lock the DLL. Issue a ZQCL command to calibrate RTT and RON values for the process voltage temperature (PVT). Prior to normal operation, tZQinit must be satisfied. When tDLLK and tZQinit have been satisfied, the DDR3 SDRAM will be ready for normal operation. 136 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Initialization Figure 50: Initialization Sequence T (MAX) = 200ms VDD VDDQ VTT See power-up conditions in the initialization sequence text, set up 1 VREF Power-up ramp tVTD Stable and valid clock T0 T1 tCK Tc0 Tb0 Ta0 Td0 CK# CK tCKSRX tIOZ tCL tCL = 20ns RESET# tIS T (MIN) = 10ns Valid CKE Valid ODT tIS NOP Command MRS MRS MRS MRS Address Code Code Code Code A10 Code Code Code Code BA0 = L BA1 = H BA2 = L BA0 = H BA1 = H BA2 = L BA0 = H BA1 = L BA2 = L BA0 = L BA1 = L BA2 = L ZQCL Valid DM BA[2:0] Valid Valid A10 = H Valid DQS DQ RTT T = 200s (MIN) T = 500s (MIN) tXPR MR2 All voltage supplies valid and stable tMRD tMRD MR3 tMRD MR1 with DLL enable tMOD MR0 with DLL reset tZQinit ZQ calibration tDLLK DRAM ready for external commands Normal operation Indicates break in time scale 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 137 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Voltage Initialization/Change Voltage Initialization/Change If the SDRAM is powered up and initialized for the 1.35V operating voltage range, voltage can be increased to the 1.5V operating range provided the following conditions are met (See Figure 51 (page 139)): * Just prior to increasing the 1.35V operating voltages, no further commands are issued, other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state. * The 1.5V operating voltages are stable prior to issuing new commands, other than NOPs or COMMAND INHIBITs. * The DLL is reset and relocked after the 1.5V operating voltages are stable and prior to any READ command. * The ZQ calibration is performed. tZQinit must be satisfied after the 1.5V operating voltages are stable and prior to any READ command. If the SDRAM is powered up and initialized for the 1.5V operating voltage range, voltage can be reduced to the 1.35V operation range provided the following conditions are met (See Figure 51 (page 139)) : * Just prior to reducing the 1.5V operating voltages, no further commands are issued, other than NOPs or COMMAND INHIBITs, and all banks are in the precharge state. * The 1.35V operating voltages are stable prior to issuing new commands, other than NOPs or COMMAND INHIBITs. * The DLL is reset and relocked after the 1.35V operating voltages are stable and prior to any READ command. * The ZQ calibration is performed. tZQinit must be satisfied after the 1.35V operating voltages are stable and prior to any READ command. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 138 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Voltage Initialization/Change VDD Voltage Switching After the DDR3L DRAM is powered up and initialized, the power supply can be altered between the DDR3L and DDR3 levels, provided the sequence in Figure 51 is maintained. Figure 51: VDD Voltage Switching Tb Ta CK, CK# Tc Te Td (( )) (( )) (( )) (( )) (( )) (( )) Tf Ti Th Tg Tj Tk (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) Valid tXPR tMRD tMRD (( )) (( )) Valid (( )) (( )) (( )) (( )) Valid (( )) (( )) (( )) (( )) (( )) (( )) tCKSRX TMIN = 10ns VDD, VDDQ (DDR3) (( )) (( )) (( )) (( )) VDD, VDDQ (DDR3L) TMIN = 10ns TMIN = 200s T = 500s RESET# CKE (( )) (( )) (( )) (( )) tIS TMIN = 10ns (( )) tDLLK tIS (( )) (( )) MRS (( )) (( )) MRS (( )) (( )) (( )) (( )) MR2 (( )) (( )) MR3 (( )) (( )) Command (( )) (( )) (( )) (( )) BA (( )) (( )) (( )) (( )) ODT (( )) (( )) (( )) (( )) (( )) (( )) RTT (( )) (( )) (( )) Note 1 tMRD MRS MR1 tMOD (( )) (( )) MRS (( )) (( )) (( )) (( )) MR0 (( )) (( )) tZQinit ZQCL (( )) (( )) Note 1 tIS tIS (( (( (( (( )) )) )) )) Static LOW in case RTT,nom is enabled at time Tg, otherwise static HIGH or LOW (( (( (( (( )) )) )) )) (( )) (( )) (( )) (( )) (( )) Time break (( )) Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Valid Don't Care 1. From time point Td until Tk, NOP or DES commands must be applied between MRS and ZQCL commands. 139 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Registers Mode Registers Mode registers (MR0-MR3) are used to define various modes of programmable operations of the DDR3 SDRAM. A mode register is programmed via the mode register set (MRS) command during initialization, and it retains the stored information (except for MR0[8], which is self-clearing) until it is reprogrammed, RESET# goes LOW, the device loses power. Contents of a mode register can be altered by re-executing the MRS command. Even if the user wants to modify only a subset of the mode register's variables, all variables must be programmed when the MRS command is issued. Reprogramming the mode register will not alter the contents of the memory array, provided it is performed correctly. The MRS command can only be issued (or re-issued) when all banks are idle and in the precharged state (tRP is satisfied and no data bursts are in progress). After an MRS command has been issued, two parameters must be satisfied: tMRD and tMOD. The controller must wait tMRD before initiating any subsequent MRS commands. Figure 52: MRS to MRS Command Timing (tMRD) T0 T1 T2 Ta0 Ta1 Ta2 MRS1 NOP NOP NOP NOP MRS2 CK# CK Command tMRD Address Valid Valid CKE3 Indicates break in time scale Notes: Don't Care 1. Prior to issuing the MRS command, all banks must be idle and precharged, tRP (MIN) must be satisfied, and no data bursts can be in progress. 2. tMRD specifies the MRS to MRS command minimum cycle time. 3. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN) (see Power-Down Mode (page 187)). 4. For a CAS latency change, tXPDLL timing must be met before any non-MRS command. The controller must also wait tMOD before initiating any non-MRS commands (excluding NOP and DES). The DRAM requires tMOD in order to update the requested features, with the exception of DLL RESET, which requires additional time. Until tMOD has been satisfied, the updated features are to be assumed unavailable. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 140 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 0 (MR0) Figure 53: MRS to nonMRS Command Timing (tMOD) T0 T1 T2 Ta0 Ta1 Ta2 MRS NOP NOP NOP NOP non MRS CK# CK Command tMOD Valid Valid Address Valid CKE Old setting New setting Updating setting Indicates break in time scale Notes: Don't Care 1. Prior to issuing the MRS command, all banks must be idle (they must be precharged, tRP must be satisfied, and no data bursts can be in progress). 2. Prior to Ta2 when tMOD (MIN) is being satisfied, no commands (except NOP/DES) may be issued. 3. If RTT was previously enabled, ODT must be registered LOW at T0 so that ODTL is satisfied prior to Ta1. ODT must also be registered LOW at each rising CK edge from T0 until tMODmin is satisfied at Ta2. 4. CKE must be registered HIGH from the MRS command until tMRSPDEN (MIN), at which time power-down may occur (see Power-Down Mode (page 187)). Mode Register 0 (MR0) The base register, mode register 0 (MR0), is used to define various DDR3 SDRAM modes of operation. These definitions include the selection of a burst length, burst type, CAS latency, operating mode, DLL RESET, write recovery, and precharge power-down mode (see Figure 54 (page 142)). Burst Length Burst length is defined by MR0[1:0]. Read and write accesses to the DDR3 SDRAM are burst-oriented, with the burst length being programmable to 4 (chop) mode, 8 (fixed) mode, or selectable using A12 during a READ/WRITE command (on-the-fly). The burst length determines the maximum number of column locations that can be accessed for a given READ or WRITE command. When MR0[1:0] is set to 01 during a READ/WRITE command, if A12 = 0, then BC4 mode is selected. If A12 = 1, then BL8 mode is selected. Specific timing diagrams, and turnaround between READ/WRITE, are shown in the READ/WRITE sections of this document. When a READ or WRITE command is issued, a block of columns equal to the burst length is effectively selected. All accesses for that burst take place within this block, meaning that the burst will wrap within the block if a boundary is reached. The block is uniquely selected by A[i:2] when the burst length is set to 4 and by A[i:3] when the burst length is set to 8, where Ai is the most significant column address bit for a given configuration. The remaining (least significant) address bit(s) is (are) used to select the start- 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 141 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 0 (MR0) ing location within the block. The programmed burst length applies to both READ and WRITE bursts. Figure 54: Mode Register 0 (MR0) Definitions M15 M14 BA2 BA1 BA0 A[15:13] A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 18 17 16 15-13 12 11 10 PD 01 0 0 01 WR Mode register 0 (MR0) 9 8 7 6 5 4 3 2 DLL 01 CAS# latency BT CL 1 0 BL M1 M0 Mode Register 0 0 Mode register 0 (MR0) 0 1 Mode register 1 (MR1) M12 Precharge PD 1 0 Mode register 2 (MR2) 0 DLL off (slow exit) 0 1 1 Mode register 3 (MR3) 1 DLL on (fast exit) 1 Burst Length 0 0 Fixed BL8 0 1 4 or 8 (on-the-fly via A12) No 1 0 Fixed BC4 (chop) Yes 1 1 Reserved M8 DLL Reset CAS Latency M3 0 0 0 16 0 0 0 0 Reserved 0 Sequential (nibble) 0 0 1 5 0 0 1 0 5 1 Interleaved 0 1 0 6 0 1 0 0 6 0 1 1 7 0 1 1 0 7 1 0 0 8 1 0 0 0 8 1 0 1 10 1 0 1 0 9 1 1 0 12 1 1 0 0 10 1 1 1 14 1 1 1 0 11 0 0 0 1 12 0 0 1 1 13 0 1 0 1 14 M11 M10 M9 Write Recovery M6 M5 M4 M2 READ Burst Type 1. MR0[18, 15:13, 7] are reserved for future use and must be programmed to 0. Note: Burst Type Accesses within a given burst can be programmed to either a sequential or an interleaved order. The burst type is selected via MR0[3] (see Figure 54 (page 142)). The ordering of accesses within a burst is determined by the burst length, the burst type, and the starting column address. DDR3 only supports 4-bit burst chop and 8-bit burst access modes. Full interleave address ordering is supported for READs, while WRITEs are restricted to nibble (BC4) or word (BL8) boundaries. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 142 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 0 (MR0) Table 76: Burst Order Burst Length READ/ WRITE Starting Column Address (A[2, 1, 0]) Burst Type = Sequential (Decimal) Burst Type = Interleaved (Decimal) Notes 4 (chop) READ 000 0, 1, 2, 3, Z, Z, Z, Z 0, 1, 2, 3, Z, Z, Z, Z 1, 2 001 1, 2, 3, 0, Z, Z, Z, Z 1, 0, 3, 2, Z, Z, Z, Z 1, 2 010 2, 3, 0, 1, Z, Z, Z, Z 2, 3, 0, 1, Z, Z, Z, Z 1, 2 011 3, 0, 1, 2, Z, Z, Z, Z 3, 2, 1, 0, Z, Z, Z, Z 1, 2 100 4, 5, 6, 7, Z, Z, Z, Z 4, 5, 6, 7, Z, Z, Z, Z 1, 2 101 5, 6, 7, 4, Z, Z, Z, Z 5, 4, 7, 6, Z, Z, Z, Z 1, 2 110 6, 7, 4, 5, Z, Z, Z, Z 6, 7, 4, 5, Z, Z, Z, Z 1, 2 WRITE 8 (fixed) READ WRITE Notes: 111 7, 4, 5, 6, Z, Z, Z, Z 7, 6, 5, 4, Z, Z, Z, Z 1, 2 0VV 0, 1, 2, 3, X, X, X, X 0, 1, 2, 3, X, X, X, X 1, 3, 4 1VV 4, 5, 6, 7, X, X, X, X 4, 5, 6, 7, X, X, X, X 1, 3, 4 000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1 001 1, 2, 3, 0, 5, 6, 7, 4 1, 0, 3, 2, 5, 4, 7, 6 1 010 2, 3, 0, 1, 6, 7, 4, 5 2, 3, 0, 1, 6, 7, 4, 5 1 011 3, 0, 1, 2, 7, 4, 5, 6 3, 2, 1, 0, 7, 6, 5, 4 1 100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3 1 101 5, 6, 7, 4, 1, 2, 3, 0 5, 4, 7, 6, 1, 0, 3, 2 1 110 6, 7, 4, 5, 2, 3, 0, 1 6, 7, 4, 5, 2, 3, 0, 1 1 111 7, 4, 5, 6, 3, 0, 1, 2 7, 6, 5, 4, 3, 2, 1, 0 1 VVV 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7 1, 3 1. Internal READ and WRITE operations start at the same point in time for BC4 as they do for BL8. 2. Z = Data and strobe output drivers are in tri-state. 3. V = A valid logic level (0 or 1), but the respective input buffer ignores level-on input pins. 4. X = "Don't Care." DLL RESET DLL RESET is defined by MR0[8] (see Figure 54 (page 142)). Programming MR0[8] to 1 activates the DLL RESET function. MR0[8] is self-clearing, meaning it returns to a value of 0 after the DLL RESET function has been initiated. Anytime the DLL RESET function is initiated, CKE must be HIGH and the clock held stable for 512 (tDLLK) clock cycles before a READ command can be issued. This is to allow time for the internal clock to be synchronized with the external clock. Failing to wait for synchronization can result in invalid output timing specifications, such as tDQSCK timings. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 143 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 0 (MR0) Write Recovery WRITE recovery time is defined by MR0[11:9] (see Figure 54 (page 142)). Write recovery values of 5, 6, 7, 8, 10, or 12 can be used by programming MR0[11:9]. The user is required to program the correct value of write recovery, which is calculated by dividing tWR (ns) by tCK (ns) and rounding up a noninteger value to the next integer: WR (cycles) = roundup (tWR (ns)/tCK (ns)). Precharge Power-Down (Precharge PD) The precharge power-down (precharge PD) bit applies only when precharge powerdown mode is being used. When MR0[12] is set to 0, the DLL is off during precharge power-down, providing a lower standby current mode; however, tXPDLL must be satisfied when exiting. When MR0[12] is set to 1, the DLL continues to run during precharge power-down mode to enable a faster exit of precharge power-down mode; however, tXP must be satisfied when exiting (see Power-Down Mode (page 187)). CAS Latency (CL) CAS latency (CL) is defined by MR0[6:4], as shown in Figure 54 (page 142). CAS latency is the delay, in clock cycles, between the internal READ command and the availability of the first bit of output data. CL can be set to 5 through 14. DDR3 SDRAM do not support half-clock latencies. Examples of CL = 6 and CL = 8 are shown below. If an internal READ command is registered at clock edge n, and the CAS latency is m clocks, the data will be available nominally coincident with clock edge n + m. See Speed Bin Tables for the CLs supported at various operating frequencies. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 144 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 0 (MR0) Figure 55: READ Latency T0 T1 T2 T3 T4 T5 T6 T7 T8 READ NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command AL = 0, CL = 6 DQS, DQS# DI n DQ DI n+1 DI n+2 DI n+3 DI n+4 T0 T1 T2 T3 T4 T5 T6 T7 T8 READ NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command AL = 0, CL = 8 DQS, DQS# DI n DQ Transitioning Data Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. For illustration purposes, only CL = 6 and CL = 8 are shown. Other CL values are possible. 2. Shown with nominal tDQSCK and nominal tDSDQ. 145 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 1 (MR1) Mode Register 1 (MR1) The mode register 1 (MR1) controls additional functions and features not available in the other mode registers: Q OFF (OUTPUT DISABLE), TDQS (for the x8 configuration only), DLL ENABLE/DLL DISABLE, RTT,nom value (ODT), WRITE LEVELING, POSTED CAS ADDITIVE latency, and OUTPUT DRIVE STRENGTH. These functions are controlled via the bits shown in Figure 56 (page 146). The MR1 register is programmed via the MRS command and retains the stored information until it is reprogrammed, until RESET# goes LOW, or until the device loses power. Reprogramming the MR1 register will not alter the contents of the memory array, provided it is performed correctly. The MR1 register must be loaded when all banks are idle and no bursts are in progress. The controller must satisfy the specified timing parameters tMRD and tMOD before initiating a subsequent operation. Figure 56: Mode Register 1 (MR1) Definition BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address bus 18 17 16 15 14 13 12 11 10 9 8 7 6 5 01 0 1 01 01 01 Q Off TDQS 01 RTT 01 WL RTT ODS M17 M16 4 3 AL 2 1 0 RTT ODS DLL Mode register 1 (MR1) Mode Register 0 0 Mode register set 0 (MR0) M12 Q Off M11 TDQS 0 1 Mode register set 1 (MR1) 0 Enabled 0 Disabled 1 0 Mode register set 2 (MR2) 1 Disabled 1 Enabled 1 1 Mode register set 3 (MR3) R TT,nom (ODT) 2 M0 DLL Enable 0 Enable (normal) 1 Disable M5 M1 Output Drive St rength R TT,nom (ODT) 3 M7 Write Levelization M9 M6 M2 Non- Writes Writes 0 0 0 0 R TT,nom disabled R TT,nom disabled 1 0 0 1 RZQ/4 (60 [NOM]) RZQ/4 (60 [NOM]) Disable (normal) Enable 0 0 RZQ/6 (40 [NOM]) 0 1 RZQ/7 (34 [NOM]) 1 0 Reserved 1 1 Reserved 0 1 0 RZQ/2 (120 [NOM]) RZQ/2 (120 [NOM]) 0 1 1 Notes: RZQ/6 (40 [NOM]) RZQ/6 (40 [NOM]) M4 M3 Additive Latency (AL) 1 0 0 RZQ/12 (20 [NOM]) n/a 0 0 Disabled (AL = 0) 1 0 1 RZQ/8 (30 [NOM]) n/a 0 1 AL = CL - 1 1 1 0 Reserved Reserved 1 0 AL = CL - 2 1 1 1 Reserved Reserved 1 1 Reserved 1. MR1[18, 15:13, 10, 8] are reserved for future use and must be programmed to 0. 2. During write leveling, if MR1[7] and MR1[12] are 1, then all RTT,nom values are available for use. 3. During write leveling, if MR1[7] is a 1, but MR1[12] is a 0, then only RTT,nom write values are available for use. DLL Enable/DLL Disable The DLL may be enabled or disabled by programming MR1[0] during the LOAD MODE command, as shown in Figure 56 (page 146). The DLL must be enabled for normal operation. DLL enable is required during power-up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debugging or evaluation. Enabling the DLL should always be followed by resetting the DLL using the appropriate LOAD MODE command. If the DLL is enabled prior to entering self refresh mode, the DLL is automatically disabled when entering SELF REFRESH operation and is automatically re-enabled and reset upon exit of SELF REFRESH operation. If the DLL is disabled prior to entering self re09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 146 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 1 (MR1) fresh mode, the DLL remains disabled even upon exit of SELF REFRESH operation until it is re-enabled and reset. The DRAM is not tested to check--nor does Micron warrant compliance with--normal mode timings or functionality when the DLL is disabled. An attempt has been made to have the DRAM operate in the normal mode where reasonably possible when the DLL has been disabled; however, by industry standard, a few known exceptions are defined: * ODT is not allowed to be used * The output data is no longer edge-aligned to the clock * CL and CWL can only be six clocks When the DLL is disabled, timing and functionality can vary from the normal operation specifications when the DLL is enabled (see DLL Disable Mode (page 125)). Disabling the DLL also implies the need to change the clock frequency (see Input Clock Frequency Change (page 129)). Output Drive Strength The DDR3 SDRAM uses a programmable impedance output buffer. The drive strength mode register setting is defined by MR1[5, 1]. RZQ/7 (34 [NOM]) is the primary output driver impedance setting for DDR3 SDRAM devices. To calibrate the output driver impedance, an external precision resistor (RZQ) is connected between the ZQ ball and VSSQ. The value of the resistor must be 240 1%. The output impedance is set during initialization. Additional impedance calibration updates do not affect device operation, and all data sheet timings and current specifications are met during an update. To meet the 34 specification, the output drive strength must be set to 34 during initialization. To obtain a calibrated output driver impedance after power-up, the DDR3 SDRAM needs a calibration command that is part of the initialization and reset procedure. OUTPUT ENABLE/DISABLE The OUTPUT ENABLE function is defined by MR1[12], as shown in Figure 56 (page 146). When enabled (MR1[12] = 0), all outputs (DQ, DQS, DQS#) function when in the normal mode of operation. When disabled (MR1[12] = 1), all DDR3 SDRAM outputs (DQ and DQS, DQS#) are tri-stated. The output disable feature is intended to be used during IDD characterization of the READ current and during tDQSS margining (write leveling) only. TDQS Enable Termination data strobe (TDQS) is a feature of the x8 DDR3 SDRAM configuration that provides termination resistance (RTT) and may be useful in some system configurations. TDQS is not supported in x4 or x16 configurations. When enabled via the mode register (MR1[11]), the RTT that is applied to DQS and DQS# is also applied to TDQS and TDQS#. In contrast to the RDQS function of DDR2 SDRAM, DDR3's TDQS provides the termination resistance RTT only. The OUTPUT DATA STROBE function of RDQS is not provided by TDQS; thus, R ON does not apply to TDQS and TDQS#. The TDQS and DM functions share the same ball. When the TDQS function is enabled via the mode register, the DM function is not supported. When the TDQS function is disabled, the DM function is provided, and the TDQS# ball is not used. The TDQS function is available in the x8 DDR3 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 147 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 1 (MR1) SDRAM configuration only and must be disabled via the mode register for the x4 and x16 configurations. On-Die Termination ODT resistance RTT,nom is defined by MR1[9, 6, 2] (see Figure 56 (page 146)). The R TT termination value applies to the DQ, DM, DQS, DQS#, and TDQS, TDQS# balls. DDR3 supports multiple RTT termination values based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240. Unlike DDR2, DDR3 ODT must be turned off prior to reading data out and must remain off during a READ burst. RTT,nom termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access, or when it is not in self refresh mode. Additionally, write accesses with dynamic ODT (RTT(WR)) enabled temporarily replaces RTT,nom with RTT(WR). The actual effective termination, RTT(EFF), may be different from the RTT targeted due to nonlinearity of the termination. For RTT(EFF) values and calculations (see On-Die Termination (ODT) (page 197)). The ODT feature is designed to improve signal integrity of the memory channel by enabling the DDR3 SDRAM controller to independently turn on/off ODT for any or all devices. The ODT input control pin is used to determine when R TT is turned on (ODTL on) and off (ODTL off), assuming ODT has been enabled via MR1[9, 6, 2]. Timings for ODT are detailed in On-Die Termination (ODT) (page 197). WRITE LEVELING The WRITE LEVELING function is enabled by MR1[7], as shown in Figure 56 (page 146). Write leveling is used (during initialization) to deskew the DQS strobe to clock offset as a result of fly-by topology designs. For better signal integrity, DDR3 SDRAM memory modules adopted fly-by topology for the commands, addresses, control signals, and clocks. The fly-by topology benefits from a reduced number of stubs and their lengths. However, fly-by topology induces flight time skews between the clock and DQS strobe (and DQ) at each DRAM on the DIMM. Controllers will have a difficult time maintaining tDQSS, tDSS, and tDSH specifications without supporting write leveling in systems which use fly-by topology-based modules. Write leveling timing and detailed operation information is provided in Write Leveling (page 131). POSTED CAS ADDITIVE Latency POSTED CAS ADDITIVE latency (AL) is supported to make the command and data bus efficient for sustainable bandwidths in DDR3 SDRAM. MR1[4, 3] define the value of AL, as shown in Figure 57 (page 149). MR1[4, 3] enable the user to program the DDR3 SDRAM with AL = 0, CL - 1, or CL - 2. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 148 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 2 (MR2) Figure 57: READ Latency (AL = 5, CL = 6) BC4 T0 T1 ACTIVE n READ n T2 T6 T11 T12 T13 T14 NOP NOP NOP NOP NOP NOP CK# CK Command tRCD (MIN) DQS, DQS# AL = 5 CL = 6 DO n DQ DO n+1 DO n+2 DO n+3 RL = AL + CL = 11 Indicates break in time scale Transitioning Data Don't Care Mode Register 2 (MR2) The mode register 2 (MR2) controls additional functions and features not available in the other mode registers. These additional functions are CAS WRITE latency (CWL), AUTO SELF REFRESH (ASR), SELF REFRESH TEMPERATURE (SRT), and DYNAMIC ODT (RTT(WR)). These functions are controlled via the bits shown in Figure 58. The MR2 is programmed via the MRS command and will retain the stored information until it is programmed again or until the device loses power. Reprogramming the MR2 register will not alter the contents of the memory array, provided it is performed correctly. The MR2 register must be loaded when all banks are idle and no data bursts are in progress, and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation. Figure 58: Mode Register 2 (MR2) Definition %$ %$ %$ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $GGUHVVEXV &:/ 577:5 657$65 0RGHUHJLVWHU05 0 0 0RGH5HJLVWHU 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 0 0 0 &$6:ULWH/DWHQF\&:/ &.W &.QV &.QV!W &.QV 0RGHUHJLVWHUVHW05 1RUPDO&WR& 0RGHUHJLVWHUVHW05 ([WHQGHG &WR& 0RGHUHJLVWHUVHW05 0RGHUHJLVWHUVHW05 W &.QV! &.QV 5HVHUYHG 5HVHUYHG 0 0 Note: 0 6HOI5HIUHVK7HPSHUDWXUH '\QDPLF2'7 577:5 577:5 GLVDEOHG 5=4:>120@ 5=4:>120@ 0 $XWR6HOI5HIUHVK 2SWLRQDO 'LVDEOHG0DQXDO &.QV!W &.QV &.QV!W &.QV &.QV!W &.QV (QDEOHG$XWRPDWLF 5HVHUYHG 1. MR2[18, 15:11, 8, and 2:0] are reserved for future use and must all be programmed to 0. 149 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 2 (MR2) CAS Write Latency (CWL) CWL is defined by MR2[5:3] and is the delay, in clock cycles, from the releasing of the internal write to the latching of the first data in. CWL must be correctly set to the corresponding operating clock frequency (see Figure 58 (page 149)). The overall WRITE latency (WL) is equal to CWL + AL (See Figure below). Figure 59: CAS Write Latency T0 T1 T2 T6 T11 T12 T13 T14 ACTIVE n WRITE n NOP NOP NOP NOP NOP NOP CK# CK Command tRCD (MIN) DQS, DQS# AL = 5 CWL = 6 DI n DQ DI n+1 DI n+2 DI n+3 WL = AL + CWL = 11 Indicates break in time scale Transitioning Data Don't Care AUTO SELF REFRESH (ASR) Mode register MR2[6] is used to disable/enable the ASR function. When ASR is disabled, the self refresh mode's refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1x refresh rate). In the disabled mode, ASR requires the user to ensure the DRAM never exceeds a T C of 85C while in self refresh unless the user enables the SRT feature listed below when the T C is between 85C and 105C. Enabling ASR assumes the DRAM self refresh rate is changed automatically from 1x to 2x when the case temperature exceeds 85C. This enables the user to operate the DRAM beyond the standard 85C limit up to the optional extended temperature range of 105C while in self refresh mode. The standard self refresh current test specifies test conditions to normal case temperature (85C) only, meaning if ASR is enabled, the standard self refresh current specifications do not apply (see Extended Temperature Usage). SELF REFRESH TEMPERATURE (SRT) Mode register MR2[7] is used to disable/enable the SRT function. When SRT is disabled, the self refresh mode's refresh rate is assumed to be at the normal 85C limit (sometimes referred to as 1x refresh rate). In the disabled mode, SRT requires the user to ensure the DRAM never exceeds a T C of 85C while in self refresh mode unless the user enables ASR. When SRT is enabled, the DRAM self refresh is changed internally from 1x to 2x, regardless of the case temperature. This enables the user to operate the DRAM beyond the standard 85C limit up to the optional extended temperature range of 105C while in self refresh mode. The standard self refresh current test specifies test conditions to nor- 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 150 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) mal case temperature (85C) only, meaning if SRT is enabled, the standard self refresh current specifications do not apply (see Extended Temperature Usage). SRT vs. ASR If the normal case temperature limit of 85C is not exceeded, then neither SRT nor ASR is required, and both can be disabled throughout operation. However, if the extended temperature option of up to 105C is needed, the user is required to provide a 2x refresh rate during (manual) refreshes when the device is (>85C but less than 95C) or 4X refreshes (>95C but less than 105C) and enable either the SRT or the ASR to ensure self refresh is performed at the 2x rate. SRT forces the DRAM to switch the internal self refresh rate from 1x to 2x. Self refresh is performed at the 2x refresh rate regardless of the case temperature. ASR automatically switches the DRAM's internal self refresh rate from 1x to 2x. However, while in self refresh mode, ASR enables the refresh rate to automatically adjust between 1x to 2x over the supported temperature range. One other disadvantage with ASR is the DRAM cannot always switch from a 1x to a 2x refresh rate at an exact case temperature of 85C. Although the DRAM will support data integrity when it switches from a 1x to a 2x refresh rate, it may switch at a lower temperature than 85C. Since only one mode is necessary, SRT and ASR cannot be enabled at the same time. DYNAMIC ODT The dynamic ODT (RTT(WR)) feature is defined by MR2[10, 9]. Dynamic ODT is enabled when a value is selected. This new DDR3 SDRAM feature enables the ODT termination value to change without issuing an MRS command, essentially changing the ODT termination on-the-fly. With dynamic ODT (RTT(WR)) enabled, the DRAM switches from normal ODT (RTT_nom) to dynamic ODT (RTT(WR)) when beginning a WRITE burst and subsequently switches back to ODT (RTT_nom) at the completion of the WRITE burst. If R TT_nom is disabled, the RTT_nom value will be High-Z. Special timing parameters must be adhered to when dynamic ODT (RTT(WR)) is enabled: ODTLcnw, ODTLcnw4, ODTLcnw8, ODTH4, ODTH8, and tADC. Dynamic ODT is only applicable during WRITE cycles. If ODT (R TT_nom) is disabled, dynamic ODT (RTT(WR)) is still permitted. RTT_nom and RTT(WR) can be used independent of one other. Dynamic ODT is not available during write leveling mode, regardless of the state of ODT (RTT_nom). For details on dynamic ODT operation, refer to Dynamic ODT (page 199). Mode Register 3 (MR3) The mode register 3 (MR3) controls additional functions and features not available in the other mode registers. Currently defined is the MULTIPURPOSE REGISTER (MPR). This function is controlled via the bits shown in Figure 60 (page 152). The MR3 is programmed via the LOAD MODE command and retains the stored information until it is programmed again or until the device loses power. Reprogramming the MR3 register will not alter the contents of the memory array, provided it is performed correctly. The MR3 register must be loaded when all banks are idle and no data bursts are in progress, and the controller must wait the specified time tMRD and tMOD before initiating a subsequent operation. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 151 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) Figure 60: Mode Register 3 (MR3) Definition BA2 BA1 BA0 A15 A14 A13 A12 A11 A10 A9 A8 18 17 16 1 1 01 A4 A3 A2 A1 A0 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 01 01 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF Address bus Mode register 3 (MR3) M2 MPR Enable 0 0 Mode register set (MR0) 0 Normal DRAM operations2 0 0 MPR READ Function Predefined pattern3 0 1 Mode register set 1 (MR1) 1 Dataflow from MPR 0 1 Reserved 1 0 Mode register set 2 (MR2) 1 0 Reserved 1 1 Mode register set 3 (MR3) 1 1 Reserved M17 M16 Notes: A7 A6 A5 Mode Register M1 M0 1. MR3[18 and 15:3] are reserved for future use and must all be programmed to 0. 2. When MPR control is set for normal DRAM operation, MR3[1, 0] will be ignored. 3. Intended to be used for READ synchronization. MULTIPURPOSE REGISTER (MPR) The MULTIPURPOSE REGISTER function is used to output a predefined system timing calibration bit sequence. Bit 2 is the master bit that enables or disables access to the MPR register, and bits 1 and 0 determine which mode the MPR is placed in. The basic concept of the multipurpose register is shown in Figure 61 (page 153). If MR3[2] is a 0, then the MPR access is disabled, and the DRAM operates in normal mode. However, if MR3[2] is a 1, then the DRAM no longer outputs normal read data but outputs MPR data as defined by MR3[0, 1]. If MR3[0, 1] is equal to 00, then a predefined read pattern for system calibration is selected. To enable the MPR, the MRS command is issued to MR3, and MR3[2] = 1. Prior to issuing the MRS command, all banks must be in the idle state (all banks are precharged, and tRP is met). When the MPR is enabled, any subsequent READ or RDAP commands are redirected to the multipurpose register. The resulting operation when either a READ or a RDAP command is issued, is defined by MR3[1:0] when the MPR is enabled (see Table 78 (page 154)). When the MPR is enabled, only READ or RDAP commands are allowed until a subsequent MRS command is issued with the MPR disabled (MR3[2] = 0). Power-down mode, self refresh, and any other nonREAD/RDAP commands are not allowed during MPR enable mode. The RESET function is supported during MPR enable mode. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 152 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) Figure 61: Multipurpose Register (MPR) Block Diagram Memory core MR3[2] = 0 (MPR off) Multipurpose register predefined data for READs MR3[2] = 1 (MPR on) DQ, DM, DQS, DQS# Notes: 1. A predefined data pattern can be read out of the MPR with an external READ command. 2. MR3[2] defines whether the data flow comes from the memory core or the MPR. When the data flow is defined, the MPR contents can be read out continuously with a regular READ or RDAP command. Table 77: MPR Functional Description of MR3 Bits MR3[2] MR3[1:0] MPR MPR READ Function Function 0 "Don't Care" Normal operation, no MPR transaction All subsequent READs come from the DRAM memory array All subsequent WRITEs go to the DRAM memory array 1 A[1:0] (see Table 78 (page 154)) Enable MPR mode, subsequent READ/RDAP commands defined by bits 1 and 2 MPR Functional Description The MPR JEDEC definition enables either a prime DQ (DQ0 on a x4 and a x8; on a x16, DQ0 = lower byte and DQ8 = upper byte) to output the MPR data with the remaining DQs driven LOW, or for all DQs to output the MPR data . The MPR readout supports fixed READ burst and READ burst chop (MRS and OTF via A12/BC#) with regular READ latencies and AC timings applicable, provided the DLL is locked as required. MPR addressing for a valid MPR read is as follows: * A[1:0] must be set to 00 as the burst order is fixed per nibble * A2 selects the burst order: - BL8, A2 is set to 0, and the burst order is fixed to 0, 1, 2, 3, 4, 5, 6, 7 * For burst chop 4 cases, the burst order is switched on the nibble base along with the following: - A2 = 0; burst order = 0, 1, 2, 3 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 153 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) - A2 = 1; burst order = 4, 5, 6, 7 * Burst order bit 0 (the first bit) is assigned to LSB, and burst order bit 7 (the last bit) is assigned to MSB * A[9:3] are a "Don't Care" * A10 is a "Don't Care" * A11 is a "Don't Care" * A12: Selects burst chop mode on-the-fly, if enabled within MR0 * A13 is a "Don't Care" * BA[2:0] are a "Don't Care" MPR Register Address Definitions and Bursting Order The MPR currently supports a single data format. This data format is a predefined read pattern for system calibration. The predefined pattern is always a repeating 0-1 bit pattern. Examples of the different types of predefined READ pattern bursts are shown in the following figures. Table 78: MPR Readouts and Burst Order Bit Mapping MR3[2] MR3[1:0] Function 1 00 READ predefined pattern for system calibration 1 1 1 01 RFU 10 RFU 11 RFU Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Burst Length Read A[2:0] BL8 000 Burst order: 0, 1, 2, 3, 4, 5, 6, 7 Predefined pattern: 0, 1, 0, 1, 0, 1, 0, 1 BC4 000 Burst order: 0, 1, 2, 3 Predefined pattern: 0, 1, 0, 1 BC4 100 Burst order: 4, 5, 6, 7 Predefined pattern: 0, 1, 0, 1 N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A N/A Burst Order and Data Pattern 1. Burst order bit 0 is assigned to LSB, and burst order bit 7 is assigned to MSB of the selected MPR agent. 154 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 62: MPR System Read Calibration with BL8: Fixed Burst Order Single Readout T0 Ta0 Tb0 Tb1 Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 Tc10 PREA MRS READ1 NOP NOP NOP NOP NOP NOP NOP NOP MRS NOP NOP Valid CK# CK Command tRP tMPRR tMOD tMOD Bank address 3 Valid 3 A[1:0] 0 02 Valid A2 1 02 0 A[9:3] 00 Valid 00 0 Valid 0 A11 0 Valid 0 A12/BC# 0 Valid 1 0 A[15:13] 0 Valid 0 A10/AP 1 155 RL DQS, DQS# Indicates break in time scale Notes: 1. READ with BL8 either by MRS or OTF. 2. Memory controller must drive 0 on A[2:0]. Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. DQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 63: MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 Tc8 Tc9 READ1 NOP NOP NOP NOP NOP NOP NOP NOP NOP Tc10 Td CK# CK Command PREA READ1 MRS tRP tCCD tMOD MRS Bank address 3 Valid Valid 3 A[1:0] 0 02 02 Valid A2 1 02 12 0 A[9:3] 00 Valid Valid 00 0 Valid Valid 0 A11 0 Valid Valid 0 A12/BC# 0 Valid Valid 1 0 A[15:13] 0 Valid Valid 0 A10/AP 1 Valid tMOD tMPRR 156 RL DQS, DQS# RL Indicates break in time scale Notes: 1. READ with BL8 either by MRS or OTF. 2. Memory controller must drive 0 on A[2:0]. Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. DQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 64: MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP Tc8 Tc9 MRS NOP Tc10 Td NOP Valid CK# CK Command tRF tMPRR tCCD tMOD tMOD Bank address 3 Valid Valid 3 A[1:0] 0 02 02 Valid A2 1 03 14 0 A[9:3] 00 Valid Valid 00 0 Valid Valid 0 A11 0 Valid Valid 0 A12/BC# 0 Valid 1 Valid 1 0 A[15:13] 0 Valid Valid 0 A10/AP 1 157 RL DQS, DQS# RL Indicates break in time scale Notes: 1. 2. 3. 4. READ with BC4 either by MRS or OTF. Memory controller must drive 0 on A[1:0]. A2 = 0 selects lower 4 nibble bits 0 . . . 3. A2 = 1 selects upper 4 nibble bits 4 . . . 7. Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. DQ 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 65: MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble T0 Ta Tb Tc0 Tc1 Tc2 Tc3 Tc4 Tc5 Tc6 Tc7 PREA MRS READ1 READ1 NOP NOP NOP NOP NOP NOP NOP Tc8 Tc9 MRS NOP Tc10 Td NOP Valid CK# CK Command tRF tCCD tMOD tMPRR tMOD Bank address 3 Valid Valid 3 A[1:0] 0 02 02 Valid A2 1 13 04 0 A[9:3] 00 Valid Valid 00 0 Valid Valid 0 A11 0 Valid Valid 0 A12/BC# 0 Valid 1 Valid 1 0 A[15:13] 0 Valid Valid 0 A10/AP 1 158 RL DQS, DQS# RL Indicates break in time scale Notes: 1. 2. 3. 4. READ with BC4 either by MRS or OTF. Memory controller must drive 0 on A[1:0]. A2 = 1 selects upper 4 nibble bits 4 . . . 7. A2 = 0 selects lower 4 nibble bits 0 . . . 3. Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Mode Register 3 (MR3) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. DQ 4Gb: x4, x8, x16 DDR3L SDRAM MODE REGISTER SET (MRS) Command MPR Read Predefined Pattern The predetermined read calibration pattern is a fixed pattern of 0, 1, 0, 1, 0, 1, 0, 1. The following is an example of using the read out predetermined read calibration pattern. The example is to perform multiple reads from the multipurpose register to do system level read timing calibration based on the predetermined and standardized pattern. The following protocol outlines the steps used to perform the read calibration: 1. Precharge all banks 2. After tRP is satisfied, set MRS, MR3[2] = 1 and MR3[1:0] = 00. This redirects all subsequent reads and loads the predefined pattern into the MPR. As soon as tMRD and tMOD are satisfied, the MPR is available 3. Data WRITE operations are not allowed until the MPR returns to the normal DRAM state 4. Issue a read with burst order information (all other address pins are "Don't Care"): 5. 6. 7. 8. * A[1:0] = 00 (data burst order is fixed starting at nibble) * A2 = 0 (for BL8, burst order is fixed as 0, 1, 2, 3, 4, 5, 6, 7) * A12 = 1 (use BL8) After RL = AL + CL, the DRAM bursts out the predefined read calibration pattern (0, 1, 0, 1, 0, 1, 0, 1) The memory controller repeats the calibration reads until read data capture at memory controller is optimized After the last MPR READ burst and after tMPRR has been satisfied, issue MRS, MR3[2] = 0, and MR3[1:0] = "Don't Care" to the normal DRAM state. All subsequent read and write accesses will be regular reads and writes from/to the DRAM array When tMRD and tMOD are satisfied from the last MRS, the regular DRAM commands (such as activate a memory bank for regular read or write access) are permitted MODE REGISTER SET (MRS) Command The mode registers are loaded via inputs BA[2:0], A[13:0]. BA[2:0] determine which mode register is programmed: * * * * BA2 = 0, BA1 = 0, BA0 = 0 for MR0 BA2 = 0, BA1 = 0, BA0 = 1 for MR1 BA2 = 0, BA1 = 1, BA0 = 0 for MR2 BA2 = 0, BA1 = 1, BA0 = 1 for MR3 The MRS command can only be issued (or re-issued) when all banks are idle and in the precharged state (tRP is satisfied and no data bursts are in progress). The controller must wait the specified time tMRD before initiating a subsequent operation such as an ACTIVATE command (see Figure 52 (page 140)). There is also a restriction after issuing an MRS command with regard to when the updated functions become available. This parameter is specified by tMOD. Both tMRD and tMOD parameters are shown in Figure 52 (page 140) and Figure 53 (page 141). Violating either of these requirements will result in unspecified operation. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 159 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ZQ CALIBRATION Operation ZQ CALIBRATION Operation The ZQ CALIBRATION command is used to calibrate the DRAM output drivers (RON) and ODT values (RTT) over process, voltage, and temperature, provided a dedicated 240 (1%) external resistor is connected from the DRAM's ZQ ball to V SSQ. DDR3 SDRAM require a longer time to calibrate RON and ODT at power-up initialization and self refresh exit, and a relatively shorter time to perform periodic calibrations. DDR3 SDRAM defines two ZQ CALIBRATION commands: ZQCL and ZQCS. An example of ZQ calibration timing is shown below. All banks must be precharged and tRP must be met before ZQCL or ZQCS commands can be issued to the DRAM. No other activities (other than issuing another ZQCL or ZQCS command) can be performed on the DRAM channel by the controller for the duration of tZQinit or tZQoper. The quiet time on the DRAM channel helps accurately calibrate RON and ODT. After DRAM calibration is achieved, the DRAM should disable the ZQ ball's current consumption path to reduce power. ZQ CALIBRATION commands can be issued in parallel to DLL RESET and locking time. Upon self refresh exit, an explicit ZQCL is required if ZQ calibration is desired. In dual-rank systems that share the ZQ resistor between devices, the controller must not enable overlap of tZQinit, tZQoper, or tZQCS between ranks. Figure 66: ZQ CALIBRATION Timing (ZQCL and ZQCS) T0 T1 Ta0 Ta1 Ta2 Ta3 Tb0 Tb1 Tc0 Tc1 Tc2 ZQCL NOP NOP NOP Valid Valid ZQCS NOP NOP NOP Valid Address Valid Valid Valid A10 Valid Valid Valid CK# CK Command CKE 1 Valid Valid 1 Valid ODT 2 Valid Valid 2 Valid DQ 3 Activities 3 High-Z tZQinit or tZQoper High-Z tZQCS Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Activities Don't Care 1. CKE must be continuously registered HIGH during the calibration procedure. 2. ODT must be disabled via the ODT signal or the MRS during the calibration procedure. 3. All devices connected to the DQ bus should be High-Z during calibration. 160 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ACTIVATE Operation ACTIVATE Operation Before any READ or WRITE commands can be issued to a bank within the DRAM, a row in that bank must be opened (activated). This is accomplished via the ACTIVATE command, which selects both the bank and the row to be activated. After a row is opened with an ACTIVATE command, a READ or WRITE command may be issued to that row, subject to the tRCD specification. However, if the additive latency is programmed correctly, a READ or WRITE command may be issued prior to tRCD (MIN). In this operation, the DRAM enables a READ or WRITE command to be issued after the ACTIVATE command for that bank, but prior to tRCD (MIN) with the requirement that (ACTIVATE-to-READ/WRITE) + AL tRCD (MIN) (see Posted CAS Additive Latency). tRCD (MIN) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the ACTIVATE command on which a READ or WRITE command can be entered. The same procedure is used to convert other specification limits from time units to clock cycles. When at least one bank is open, any READ-to-READ command delay or WRITE-toWRITE command delay is restricted to tCCD (MIN). A subsequent ACTIVATE command to a different row in the same bank can only be issued after the previous active row has been closed (precharged). The minimum time interval between successive ACTIVATE commands to the same bank is defined by tRC. A subsequent ACTIVATE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access overhead. The minimum time interval between successive ACTIVATE commands to different banks is defined by tRRD. No more than four bank ACTIVATE commands may be issued in a given tFAW (MIN) period, and the tRRD (MIN) restriction still applies. The tFAW (MIN) parameter applies, regardless of the number of banks already opened or closed. Figure 67: Example: Meeting tRRD (MIN) and tRCD (MIN) T0 T1 T2 T3 T4 T5 T8 T9 T10 T11 Command ACT NOP NOP ACT NOP NOP NOP NOP NOP RD/WR Address Row Row Col BA[2:0] Bank x Bank y Bank y CK# CK tRRD tRCD Indicates break in time scale 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 161 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM ACTIVATE Operation Figure 68: Example: tFAW CK# T0 T1 T4 T5 T8 T9 T10 T11 T19 T20 ACT NOP ACT NOP ACT NOP ACT NOP NOP ACT CK Command Address BA[2:0] Row Row Row Row Row Bank a Bank b Bank c Bank d Bank ey tRRD tFAW Indicates break in time scale 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 162 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation READ Operation READ bursts are initiated with a READ command. The starting column and bank addresses are provided with the READ command and auto precharge is either enabled or disabled for that burst access. If auto precharge is enabled, the row being accessed is automatically precharged at the completion of the burst. If auto precharge is disabled, the row will be left open after the completion of the burst. During READ bursts, the valid data-out element from the starting column address is available READ latency (RL) clocks later. RL is defined as the sum of posted CAS additive latency (AL) and CAS latency (CL) (RL = AL + CL). The value of AL and CL is programmable in the mode register via the MRS command. Each subsequent data-out element is valid nominally at the next positive or negative clock edge (that is, at the next crossing of CK and CK#). Figure 69 shows an example of RL based on a CL setting of 8 and an AL setting of 0. Figure 69: READ Latency T0 T7 T8 T9 T10 T11 T12 T12 READ NOP NOP NOP NOP NOP NOP NOP CK# CK Command Address Bank a, Col n CL = 8, AL = 0 DQS, DQS# DO n DQ Indicates break in time scale Notes: Transitioning Data Don't Care 1. DO n = data-out from column n. 2. Subsequent elements of data-out appear in the programmed order following DO n. DQS, DQS# is driven by the DRAM along with the output data. The initial LOW state on DQS and HIGH state on DQS# is known as the READ preamble (tRPRE). The LOW state on DQS and the HIGH state on DQS#, coincident with the last data-out element, is known as the READ postamble (tRPST). Upon completion of a burst, assuming no other commands have been initiated, the DQ goes High-Z. A detailed explanation of tDQSQ (valid data-out skew), tQH (data-out window hold), and the valid data window are depicted in Figure 80 (page 171). A detailed explanation of tDQSCK (DQS transition skew to CK) is also depicted in Figure 80 (page 171). Data from any READ burst may be concatenated with data from a subsequent READ command to provide a continuous flow of data. The first data element from the new burst follows the last element of a completed burst. The new READ command should be issued tCCD cycles after the first READ command. This is shown for BL8 in Figure 70 (page 165). If BC4 is enabled, tCCD must still be met, which will cause a gap in the data output, as shown in Figure 71 (page 165). Nonconsecutive READ data is reflected in Figure 72 (page 166). DDR3 SDRAM does not allow interrupting or truncating any READ burst. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 163 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Data from any READ burst must be completed before a subsequent WRITE burst is allowed. An example of a READ burst followed by a WRITE burst for BL8 is shown in Figure 73 (page 166) (BC4 is shown in Figure 74 (page 167)). To ensure the READ data is completed before the WRITE data is on the bus, the minimum READ-to-WRITE timing is RL + tCCD - WL + 2 tCK. A READ burst may be followed by a PRECHARGE command to the same bank, provided auto precharge is not activated. The minimum READ-to-PRECHARGE command spacing to the same bank is four clocks and must also satisfy a minimum analog time from the READ command. This time is called tRTP (READ-to-PRECHARGE). tRTP starts AL cycles later than the READ command. Examples for BL8 are shown in Figure 75 (page 167) and BC4 in Figure 76 (page 168). Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met. The PRECHARGE command followed by another PRECHARGE command to the same bank is allowed. However, the precharge period will be determined by the last PRECHARGE command issued to the bank. If A10 is HIGH when a READ command is issued, the READ with auto precharge function is engaged. The DRAM starts an auto precharge operation on the rising edge, which is AL + tRTP cycles after the READ command. DRAM support a tRAS lockout feature (see Figure 78 (page 168)). If tRAS (MIN) is not satisfied at the edge, the starting point of the auto precharge operation will be delayed until tRAS (MIN) is satisfied. If tRTP (MIN) is not satisfied at the edge, the starting point of the auto precharge operation is delayed until tRTP (MIN) is satisfied. In case the internal precharge is pushed out by tRTP, tRP starts at the point at which the internal precharge happens (not at the next rising clock edge after this event). The time from READ with auto precharge to the next ACTIVATE command to the same bank is AL + (tRTP + tRP)*, where * means rounded up to the next integer. In any event, internal precharge does not start earlier than four clocks after the last 8n-bit prefetch. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 164 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 70: Consecutive READ Bursts (BL8) T0 T1 READ NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command1 tCCD Address2 Bank, Col n Bank, Col b tRPRE tRPST DQS, DQS# DO n DQ3 RL = 5 DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 DO b DO b+1 DO b+2 DO b+3 DO b+4 DO b+5 DO b+6 DO b+7 RL = 5 Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0 and T4. 3. DO n (or b) = data-out from column n (or column b). 4. BL8, RL = 5 (CL = 5, AL = 0). Notes: 165 Figure 71: Consecutive READ Bursts (BC4) T1 READ NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 NOP NOP READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK Command1 tCCD Address2 Bank, Col n Bank, Col b tRPRE tRPST tRPRE tRPST DQS, DQS# DQ3 RL = 5 DO n DO n+1 DO n+2 DO n+3 DO b DO b+1 DO b+2 DO b+3 RL = 5 Transitioning Data Notes: Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0 and T4. 3. DO n (or b) = data-out from column n (or column b). 4. BC4, RL = 5 (CL = 5, AL = 0). 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. T0 CK# 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 72: Nonconsecutive READ Bursts T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 READ NOP T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command Address Bank a, Col n NOP NOP Bank a, Col b CL = 8 CL = 8 DQS, DQS# DO n DQ DO b Transitioning Data Notes: 1. 2. 3. 4. Don't Care AL = 0, RL = 8. DO n (or b) = data-out from column n (or column b). Seven subsequent elements of data-out appear in the programmed order following DO n. Seven subsequent elements of data-out appear in the programmed order following DO b. Figure 73: READ (BL8) to WRITE (BL8) 166 CK# T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 READ NOP NOP NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP CK Command1 tBL tWR = 4 clocks tWR Address2 Bank, Col n Bank, Col b tRPRE tRPST tWPRE tWPST DQS, DQS# DO n DQ3 RL = 5 DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 DI n DI n+1 DI DI n+2 n+3 DI n+4 DI n+5 DI n+6 Transitioning Data Notes: DI n+7 WL = 5 Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at T0, and the WRITE command at T6. 3. DO n = data-out from column, DI b = data-in for column b. 4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5). 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. READ-to-WRITE command delay = RL + tCCD + 2tCK - WL 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 74: READ (BC4) to WRITE (BC4) OTF T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 READ NOP NOP NOP WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command1 READ-to-WRITE command delay = RL + tCCD/2 + 2tCK - WL tBL tWR = 4 clocks tWTR Address2 Bank, Col n Bank, Col b tRPRE tRPST tWPRE tWPST DQS, DQS# DO n DQ3 RL = 5 DO n+ 1 DO n+ 2 DO n+3 DI n DI n+ 1 DI n+2 DI n+ 3 WL = 5 Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at T4. 3. DO n = data-out from column n; DI n = data-in from column b. 4. BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5). Notes: 167 T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 PRE NOP NOP NOP NOP NOP NOP NOP T13 T14 T15 T16 T17 ACT NOP NOP NOP NOP CK# CK Command Address Bank a, Col n Bank a, (or all) Bank a, Row b tRTP tRP DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 tRAS Transitioning Data Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Figure 75: READ to PRECHARGE (BL8) 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 76: READ to PRECHARGE (BC4) CK# T0 T1 T2 T3 T4 READ NOP NOP NOP NOP T5 T6 T7 T8 T9 T10 T11 T12 PRE NOP NOP NOP NOP NOP NOP NOP T13 T14 T15 T16 T17 ACT NOP NOP NOP NOP CK Command Address Bank a, Col n Bank a, (or all) Bank a, Row b tRP tRTP DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 tRAS Transitioning Data Don't Care Figure 77: READ to PRECHARGE (AL = 5, CL = 6) T0 T1 T2 T3 T4 T5 T6 T7 T8 READ NOP NOP NOP NOP NOP NOP NOP NOP T9 T10 T11 T12 T13 T14 PRE NOP NOP NOP NOP NOP T15 CK# CK Command Address Bank a, Col n Bank a, (or all) tRTP AL = 5 ACT Bank a, Row b tRP DQS, DQS# 168 DO n DQ DO n+2 DO n+1 DO n+3 CL = 6 tRAS Transitioning Data Don't Care T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address Bank a, Col n Ta0 CK# CK NOP ACT Bank a, Row b AL = 4 tRTP (MIN) DQS, DQS# DO n DQ DO n+1 DO n+2 DO n+3 CL = 6 tRAS tRP (MIN) Indicates break in time scale Transitioning Data Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Figure 78: READ with Auto Precharge (AL = 4, CL = 6) 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation DQS to DQ output timing is shown in Figure 79 (page 170). The DQ transitions between valid data outputs must be within tDQSQ of the crossing point of DQS, DQS#. DQS must also maintain a minimum HIGH and LOW time of tQSH and tQSL. Prior to the READ preamble, the DQ balls will either be floating or terminated, depending on the status of the ODT signal. Figure 80 (page 171) shows the strobe-to-clock timing during a READ. The crossing point DQS, DQS# must transition within tDQSCK of the clock crossing point. The data out has no timing relationship to CK, only to DQS, as shown in Figure 80 (page 171). Figure 80 (page 171) also shows the READ preamble and postamble. Typically, both DQS and DQS# are High-Z to save power (VDDQ). Prior to data output from the DRAM, DQS is driven LOW and DQS# is HIGH for tRPRE. This is known as the READ preamble. The READ postamble, tRPST, is one half clock from the last DQS, DQS# transition. During the READ postamble, DQS is driven LOW and DQS# is HIGH. When complete, the DQ is disabled or continues terminating, depending on the state of the ODT signal. Figure 83 (page 173) demonstrates how to measure tRPST. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 169 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 79: Data Output Timing - tDQSQ and Data Valid Window CK# T0 T1 T2 READ NOP NOP T3 T4 T5 T6 T7 T8 T9 T10 NOP NOP NOP NOP NOP NOP NOP NOP CK Command1 RL = AL + CL Address2 Bank, Col n tDQSQ tDQSQ tLZDQ (MAX) (MIN) (MAX) tRPST tHZDQ (MAX) DQS, DQS# tRPRE tQH DQ3 (last data valid) DO n DO n DQ3 (first data no longer valid) tQH DO DO DO DO DO DO DO n+1 n+2 n+3 n+4 n+5 n+6 n+7 DO DO DO DO DO DO DO n+3 n+1 n+2 n+4 n+5 n+6 n+7 DO n All DQ collectively Data valid DO n+1 DO n+2 DO n+3 DO n+4 DO n+5 DO n+6 DO n+7 Data valid Don't Care Notes: 170 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at T0. 3. DO n = data-out from column n. 4. BL8, RL = 5 (AL = 0, CL = 5). 5. Output timings are referenced to VDDQ/2 and DLL on and locked. 6. tDQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to CK. 7. Early data transitions may not always happen at the same DQ. Data transitions of a DQ can be early or late within a burst. 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level that specifies when the device output is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ. Figure 81 (page 172) shows a method of calculating the point when the device is no longer driving tHZDQS and tHZDQ, or begins driving tLZDQS, tLZDQ, by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. The parameters tLZDQS, tLZDQ, tHZDQS, and tHZDQ are defined as single-ended. Figure 80: Data Strobe Timing - READs RL measured to this point T0 T1 T2 T3 T4 T5 T6 CK CK# tDQSCK tLZDQS tDQSCK (MIN) (MIN) tQSH tDQSCK (MIN) tQSL tQSH tDQSCK (MIN) tHZDQS (MIN) (MIN) tQSL DQS, DQS# early strobe tRPST tRPRE Bit 0 tLZDQS Bit 1 tDQSCK (MAX) Bit 2 Bit 3 tDQSCK (MAX) Bit 4 Bit 5 tDQSCK (MAX) Bit 6 Bit 7 tDQSCK (MAX) tHZDQS (MAX) (MAX) tRPST DQS, DQS# late strobe tRPRE tQSH Bit 0 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN tQSL Bit 1 tQSH Bit 2 171 tQSL Bit 3 Bit 4 Bit 5 Bit 6 Bit 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Figure 81: Method for Calculating tLZ and tHZ VOH - xmV VTT + 2xmV VOH - 2xmV VTT + xmV tLZDQS, tLZDQ tHZDQS, tHZDQ T2 T1 tHZDQS, tHZDQ VOL + 2xmV VTT - xmV VOL + xmV VTT - 2xmV T1 T2 tLZDQS, tLZDQ end point = 2 x T1 - T2 begin point = 2 x T1 - T2 1. Within a burst, the rising strobe edge is not necessarily fixed at tDQSCK (MIN) or tDQSCK (MAX). Instead, the rising strobe edge can vary between tDQSCK (MIN) and tDQSCK (MAX). 2. The DQS HIGH pulse width is defined by tQSH, and the DQS LOW pulse width is defined by tQSL. Likewise, tLZDQS (MIN) and tHZDQS (MIN) are not tied to tDQSCK (MIN) (early strobe case), and tLZDQS (MAX) and tHZDQS (MAX) are not tied to tDQSCK (MAX) (late strobe case); however, they tend to track one another. 3. The minimum pulse width of the READ preamble is defined by tRPRE (MIN). The minimum pulse width of the READ postamble is defined by tRPST (MIN). Notes: Figure 82: tRPRE Timing CK VTT CK# tA tB DQS VTT Single-ended signal provided as background information tC tD VTT DQS# Single-ended signal provided as background information T1 begins tRPRE DQS - DQS# tRPRE T2 ends Resulting differential signal relevant for tRPRE specification 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 0V tRPRE 172 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM READ Operation Figure 83: tRPST Timing CK VTT CK# tA DQS Single-ended signal, provided as background information t VTT B tC tD DQS# VTT Single-ended signal, provided as background information tRPST DQS - DQS# Resulting differential signal relevant for tRPST specification 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN T1 begins tRPST 0V T2 ends tRPST 173 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation WRITE Operation WRITE bursts are initiated with a WRITE command. The starting column and bank addresses are provided with the WRITE command, and auto precharge is either enabled or disabled for that access. If auto precharge is selected, the row being accessed is precharged at the end of the WRITE burst. If auto precharge is not selected, the row will remain open for subsequent accesses. After a WRITE command has been issued, the WRITE burst may not be interrupted. For the generic WRITE commands used in Figure 86 (page 176) through Figure 94 (page 181), auto precharge is disabled. During WRITE bursts, the first valid data-in element is registered on a rising edge of DQS following the WRITE latency (WL) clocks later and subsequent data elements will be registered on successive edges of DQS. WRITE latency (WL) is defined as the sum of posted CAS additive latency (AL) and CAS WRITE latency (CWL): WL = AL + CWL. The values of AL and CWL are programmed in the MR0 and MR2 registers, respectively. Prior to the first valid DQS edge, a full cycle is needed (including a dummy crossover of DQS, DQS#) and specified as the WRITE preamble shown in Figure 86 (page 176). The half cycle on DQS following the last data-in element is known as the WRITE postamble. The time between the WRITE command and the first valid edge of DQS is WL clocks tDQSS. Figure 87 (page 177) through Figure 94 (page 181) show the nominal case where tDQSS = 0ns; however, Figure 86 (page 176) includes tDQSS (MIN) and tDQSS (MAX) cases. Data may be masked from completing a WRITE using data mask. The data mask occurs on the DM ball aligned to the WRITE data. If DM is LOW, the WRITE completes normally. If DM is HIGH, that bit of data is masked. Upon completion of a burst, assuming no other commands have been initiated, the DQ will remain High-Z, and any additional input data will be ignored. Data for any WRITE burst may be concatenated with a subsequent WRITE command to provide a continuous flow of input data. The new WRITE command can be tCCD clocks following the previous WRITE command. The first data element from the new burst is applied after the last element of a completed burst. Figure 87 (page 177) and Figure 88 (page 177) show concatenated bursts. An example of nonconsecutive WRITEs is shown in Figure 89 (page 178). Data for any WRITE burst may be followed by a subsequent READ command after tWTR has been met (see Figure 90 (page 178), Figure 91 (page 179), and Figure 92 (page 180)). Data for any WRITE burst may be followed by a subsequent PRECHARGE command, providing tWR has been met, as shown in Figure 93 (page 181) and Figure 94 (page 181). Both tWTR and tWR starting time may vary, depending on the mode register settings (fixed BC4, BL8 versus OTF). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 174 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Figure 84: tWPRE Timing CK VTT CK# T1 begins tWPRE DQS - DQS# 0V tWPRE T2 Resulting differential signal relevant for tWPRE specification tWPRE ends Figure 85: tWPST Timing CK VTT CK# tWPST DQS - DQS# Resulting differential signal relevant for tWPST specification 0V T1 begins tWPST T2 ends tWPST 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 175 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Figure 86: WRITE Burst T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 Command1 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address2 Bank, Col n CK# CK WL = AL + CWL tDQSS tWPRE (MIN) tDQSS tDSH tDSH tDSH tDSH tWPST DQS, DQS# tDQSH tDQSL tDQSH DI n DQ3 tDQSS DI n+1 tWPRE (NOM) tDQSL tDQSH DI n+2 tDQSL DI n+3 tDSH tDQSH DI n+4 tDQSL DI n+5 tDSH tDQSH DI n+6 tDQSL DI n+7 tDSH tDSH tWPST tDQSH tDQSL DQS, DQS# tDQSH tDQSL tDQSH tDSS tDQSH tDSS DI n DQ3 tDQSL DI n+1 tDQSL tDQSH tDQSL tDSS DI n+2 DI n+3 tDSS DI n+4 DI n+5 tDSS DI n+6 DI n+7 tDQSS tDQSS tWPRE (MAX) tWPST DQS, DQS# tDQSH tDQSL tDQSH tDSS DI n DQ3 tDQSL tDQSH tDSS DI n+1 tDQSL tDQSH tDSS DI n+2 DI n+3 tDQSL tDQSH tDSS DI n+4 DI n+5 tDQSL tDSS DI n+6 DI n+7 Transitioning Data Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE command at T0. 3. DI n = data-in for column n. 4. BL8, WL = 5 (AL = 0, CWL = 5). 5. tDQSS must be met at each rising clock edge. 6. tWPST is usually depicted as ending at the crossing of DQS, DQS#; however, tWPST actually ends when DQS no longer drives LOW and DQS# no longer drives HIGH. 176 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 87: Consecutive WRITE (BL8) to WRITE (BL8) T0 T1 WRITE NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 NOP NOP WRITE NOP NOP NOP NOP NOP NOP T11 T12 T13 NOP NOP NOP T14 CK# CK Command1 tBL tCCD NOP tWR = 4 clocks tWTR Address2 Valid Valid tWPST tWPRE DQS, DQS# DI n DQ3 DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 WL = 5 WL = 5 Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at T0 and T4. 3. DI n (or b) = data-in for column n (or column b). 4. BL8, WL = 5 (AL = 0, CWL = 5). Notes: 177 Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via OTF T0 T1 WRITE NOP T2 T3 T4 T5 T6 T7 T8 T9 T10 NOP NOP WRITE NOP NOP NOP NOP NOP NOP T11 T12 T13 NOP NOP NOP T14 CK# Command1 tCCD tBL NOP tWR = 4 clocks tWTR Address2 Valid Valid tWPST tWPRE tWPRE tWPST DQS, DQS# DI n DQ3 DI n+1 DI n+2 DI n+3 DI b DI b+1 DI b+2 DI b+3 WL = 5 WL = 5 Transitioning Data Notes: 1. 2. 3. 4. 5. NOP commands are shown for ease of illustration; other commands may be valid at these times. BC4, WL = 5 (AL = 0, CWL = 5). DI n (or b) = data-in for column n (or column b). The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4. If set via MRS (fixed) tWR and tWTR would start T11 (2 cycles earlier). Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. CK 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 89: Nonconsecutive WRITE to WRITE T0 T1 T2 T3 T4 Command WRITE NOP NOP NOP NOP Address Valid CK# T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK NOP WRITE NOP NOP Valid WL = CWL + AL = 7 WL = CWL + AL = 7 DQS, DQS# DI n DQ DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 DM Transitioning Data Notes: 1. 2. 3. 4. Don't Care DI n (or b) = data-in for column n (or column b). Seven subsequent elements of data-in are applied in the programmed order following DO n. Each WRITE command may be to any bank. Shown for WL = 7 (CWL = 7, AL = 0). Figure 90: WRITE (BL8) to READ (BL8) 178 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP T11 Ta0 NOP READ CK# CK Command1 tWTR2 Valid Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 WL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write data shown at T9. 3. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and MR0[12] = 1 during the WRITE command at T0. The READ command at Ta0 can be either BC4 or BL8, depending on MR0[1:0] and the A12 status at Ta0. 4. DI n = data-in for column n. 5. RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5). 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Address3 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 91: WRITE to READ (BC4 Mode Register Setting) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP READ CK# CK Command1 tWTR2 Address3 Valid Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 WL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 179 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts with the first rising clock edge after the last write data shown at T7. 3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0 and the READ command at Ta0. 4. DI n = data-in for column n. 5. BC4 (fixed), WL = 5 (AL = 0, CWL = 5), RL = 5 (AL = 0, CL = 5). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 92: WRITE (BC4 OTF) to READ (BC4 OTF) T0 T1 T2 T3 T4 T5 T6 WRITE NOP NOP NOP NOP NOP NOP T7 T8 T9 T10 NOP NOP NOP NOP T11 Tn NOP READ CK# CK Command1 tBL Address3 = 4 clocks tWTR2 Valid Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 WL = 5 RL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 180 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. tWTR controls the WRITE-to-READ delay to the same device and starts after tBL. 3. The BC4 OTF setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and the READ command at Tn. 4. DI n = data-in for column n. 5. BC4, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5). 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Figure 93: WRITE (BL8) to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1 Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE Address Valid CK# CK Valid tWR WL = AL + CWL DQS, DQS# DI n DQ BL8 DI n+1 DI n+2 DI n+3 DI n+4 DI n+5 DI n+6 DI n+7 Indicates break in time scale Notes: Transitioning Data Don't Care 1. DI n = data-in from column n. 2. Seven subsequent elements of data-in are applied in the programmed order following DO n. 3. Shown for WL = 7 (AL = 0, CWL = 7). Figure 94: WRITE (BC4 Mode Register Setting) to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 Ta0 Ta1 Command WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP PRE Address Valid CK# CK Valid tWR WL = AL + CWL DQS, DQS# DI n DQ BC4 DI n+1 DI n+2 DI n+3 Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The write recovery time (tWR) is referenced from the first rising clock edge after the last write data is shown at T7. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank. 3. The fixed BC4 setting is activated by MR0[1:0] = 10 during the WRITE command at T0. 4. DI n = data-in for column n. 5. BC4 (fixed), WL = 5, RL = 5. 181 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Figure 95: WRITE (BC4 OTF) to PRECHARGE T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP Tn CK# CK Command1 PRE tWR2 Address3 Bank, Col n Valid tWPRE tWPST DQS, DQS# DI n DQ4 DI n+1 DI n+2 DI n+3 WL = 5 Indicates break in time scale Notes: Transitioning Data Don't Care 1. NOP commands are shown for ease of illustration; other commands may be valid at these times. 2. The write recovery time (tWR) is referenced from the rising clock edge at T9. tWR specifies the last burst WRITE cycle until the PRECHARGE command can be issued to the same bank. 3. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0. 4. DI n = data-in for column n. 5. BC4 (OTF), WL = 5, RL = 5. DQ Input Timing Figure 86 (page 176) shows the strobe-to-clock timing during a WRITE burst. DQS, DQS# must transition within 0.25tCK of the clock transitions, as limited by tDQSS. All data and data mask setup and hold timings are measured relative to the DQS, DQS# crossing, not the clock crossing. The WRITE preamble and postamble are also shown in Figure 86 (page 176). One clock prior to data input to the DRAM, DQS must be HIGH and DQS# must be LOW. Then for a half clock, DQS is driven LOW (DQS# is driven HIGH) during the WRITE preamble, tWPRE. Likewise, DQS must be kept LOW by the controller after the last data is written to the DRAM during the WRITE postamble, tWPST. Data setup and hold times are also shown in Figure 86 (page 176). All setup and hold times are measured from the crossing points of DQS and DQS#. These setup and hold values pertain to data input and data mask input. Additionally, the half period of the data input strobe is specified by tDQSH and tDQSL. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 182 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM WRITE Operation Figure 96: Data Input Timing DQS, DQS# tWPRE DQ tDQSH tWPST tDQSL DI b DM tDS tDH tDS tDH Transitioning Data 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 183 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM PRECHARGE Operation PRECHARGE Operation Input A10 determines whether one bank or all banks are to be precharged and, in the case where only one bank is to be precharged, inputs BA[2:0] select the bank. When all banks are to be precharged, inputs BA[2:0] are treated as "Don't Care." After a bank is precharged, it is in the idle state and must be activated prior to any READ or WRITE commands being issued. SELF REFRESH Operation The SELF REFRESH operation is initiated like a REFRESH command except CKE is LOW. The DLL is automatically disabled upon entering SELF REFRESH and is automatically enabled and reset upon exiting SELF REFRESH. All power supply inputs (including V REFCA and V REFDQ) must be maintained at valid levels upon entry/exit and during self refresh mode operation. V REFDQ may float or not drive V DDQ/2 while in self refresh mode under certain conditions: * * * * VSS < V REFDQ < V DD is maintained. VREFDQ is valid and stable prior to CKE going back HIGH. The first WRITE operation may not occur earlier than 512 clocks after V REFDQ is valid. All other self refresh mode exit timing requirements are met. The DRAM must be idle with all banks in the precharge state (tRP is satisfied and no bursts are in progress) before a self refresh entry command can be issued. ODT must also be turned off before self refresh entry by registering the ODT ball LOW prior to the self refresh entry command (see On-Die Termination (ODT) ( for timing requirements). If RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a "Don't Care." After the self refresh entry command is registered, CKE must be held LOW to keep the DRAM in self refresh mode. After the DRAM has entered self refresh mode, all external control signals, except CKE and RESET#, are "Don't Care." The DRAM initiates a minimum of one REFRESH command internally within the tCKE period when it enters self refresh mode. The requirements for entering and exiting self refresh mode depend on the state of the clock during self refresh mode. First and foremost, the clock must be stable (meeting tCK specifications) when self refresh mode is entered. If the clock remains stable and the frequency is not altered while in self refresh mode, then the DRAM is allowed to exit self refresh mode after tCKESR is satisfied (CKE is allowed to transition HIGH tCKESR later than when CKE was registered LOW). Since the clock remains stable in self refresh mode (no frequency change), tCKSRE and tCKSRX are not required. However, if the clock is altered during self refresh mode (if it is turned-off or its frequency changes), then tCKSRE and tCKSRX must be satisfied. When entering self refresh mode, tCKSRE must be satisfied prior to altering the clock's frequency. Prior to exiting self refresh mode, tCKSRX must be satisfied prior to registering CKE HIGH. When CKE is HIGH during self refresh exit, NOP or DES must be issued for tXS time. tXS is required for the completion of any internal refresh already in progress and must be satisfied before a valid command not requiring a locked DLL can be issued to the device. tXS is also the earliest time self refresh re-entry may occur. Before a command requiring a locked DLL can be applied, a ZQCL command must be issued, tZQOPER timing must be met, and tXSDLL must be satisfied. ODT must be off during tXSDLL. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 184 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM SELF REFRESH Operation Figure 97: Self Refresh Entry/Exit Timing T0 T1 T2 Ta0 Tb0 Tc0 Tc1 Td0 Te0 Tf0 Valid Valid CK# CK tCKSRX1 tCKSRE1 tIS tIH tCPDED tIS CKE tCKESR (MIN)1 tIS ODT2 Valid ODTL RESET#2 Command NOP SRE (REF)3 NOP4 SRX (NOP) NOP5 Address tRP8 Valid 6 Valid 7 Valid Valid tXS6, 9 tXSDLL7, 9 Enter self refresh mode (synchronous) Exit self refresh mode (asynchronous) Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. The clock must be valid and stable, meeting tCK specifications at least tCKSRE after entering self refresh mode, and at least tCKSRX prior to exiting self refresh mode, if the clock is stopped or altered between states Ta0 and Tb0. If the clock remains valid and unchanged from entry and during self refresh mode, then tCKSRE and tCKSRX do not apply; however, tCKESR must be satisfied prior to exiting at SRX. 2. ODT must be disabled and RTT off prior to entering self refresh at state T1. If both RTT,nom and RTT(WR) are disabled in the mode registers, ODT can be a "Don't Care." 3. Self refresh entry (SRE) is synchronous via a REFRESH command with CKE LOW. 4. A NOP or DES command is required at T2 after the SRE command is issued prior to the inputs becoming "Don't Care." 5. NOP or DES commands are required prior to exiting self refresh mode until state Te0. 6. tXS is required before any commands not requiring a locked DLL. 7. tXSDLL is required before any commands requiring a locked DLL. 8. The device must be in the all banks idle state prior to entering self refresh mode. For example, all banks must be precharged, tRP must be met, and no data bursts can be in progress. 9. Self refresh exit is asynchronous; however, tXS and tXSDLL timings start at the first rising clock edge where CKE HIGH satisfies tISXR at Tc1. tCKSRX timing is also measured so that tISXR is satisfied at Tc1. 185 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Extended Temperature Usage Extended Temperature Usage Micron's DDR3 SDRAM support the optional extended case temperature (TC) range of 0C to 105C. Thus, the SRT and ASR options must be used at a minimum for temperatures above 85C (and does not exceed 105C). The extended temperature range DRAM must be refreshed manually at 2x (double refresh) anytime the case temperature is above 85C (and does not exceed 95C) and 4x (four times refresh) anytime the case temperature is above 95C (and does not exceed 105C). The manual refresh requirement is accomplished by reducing the refresh period from 64ms to 32ms (2x refresh) or 64ms to 16ms (4x refresh). However, self refresh mode requires either ASR or SRT to support the extended temperature. Thus, either ASR or SRT must be enabled when T C is above 85C or self refresh cannot be used until T C is at or below 85C. Table 79 summarizes the two extended temperature options and Table 80 summarizes how the two extended temperature options relate to one another. Table 79: Self Refresh Temperature and Auto Self Refresh Description Field MR2 Bits Description Self Refresh Temperature (SRT) SRT 7 If ASR is disabled (MR2[6] = 0), SRT must be programmed to indicate TOPER during self refresh: *MR2[7] = 0: Normal operating temperature range (0C to 85C) *MR2[7] = 1: Extended operating temperature range (0C to 105C) If ASR is enabled (MR2[7] = 1), SRT must be set to 0, even if the extended temperature range is supported *MR2[7] = 0: SRT is disabled Auto Self Refresh (ASR) ASR 6 When ASR is enabled, the DRAM automatically provides SELF REFRESH power management functions, (refresh rate for all supported operating temperature values) * MR2[6] = 1: ASR is enabled (M7 must = 0) When ASR is not enabled, the SRT bit must be programmed to indicate TOPER during SELF REFRESH operation * MR2[6] = 0: ASR is disabled; must use manual self refresh temperature (SRT) Table 80: Self Refresh Mode Summary MR2[6] MR2[7] (ASR) (SRT) SELF REFRESH Operation Permitted Operating Temperature Range for Self Refresh Mode 0 0 Self refresh mode is supported in the normal temperature range 0 1 Self refresh mode is supported in normal and extended temper- Normal and extended (0C to 105C) ature ranges; When SRT is enabled, it increases self refresh power consumption 1 0 Self refresh mode is supported in normal and extended temper- Normal and extended (0C to 105C) ature ranges; Self refresh power consumption may be temperature-dependent 1 1 Illegal 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 186 Normal (0C to 85C) Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Power-Down Mode Power-down is synchronously entered when CKE is registered LOW coincident with a NOP or DES command. CKE is not allowed to go LOW while an MRS, MPR, ZQCAL, READ, or WRITE operation is in progress. CKE is allowed to go LOW while any of the other legal operations (such as ROW ACTIVATION, PRECHARGE, auto precharge, or REFRESH) are in progress. However, the power-down IDD specifications are not applicable until such operations have completed. Depending on the previous DRAM state and the command issued prior to CKE going LOW, certain timing constraints must be satisfied (as noted in Table 81). Timing diagrams detailing the different power-down mode entry and exits are shown in Figure 98 (page 189) through Figure 107 (page 193). Table 81: Command to Power-Down Entry Parameters DRAM Status Last Command Prior to CKE LOW1 Parameter (Min) Parameter Value Figure Idle or active ACTIVATE tACTPDEN 1tCK Figure 105 (page 192) Idle or active PRECHARGE tPRPDEN 1tCK READ or READAP tRDPDEN Active WRITE: BL8OTF, BL8MRS, BC4OTF tWRPDEN Active WRITE: BC4MRS Active Active WRITEAP: BL8OTF, BL8MRS, BC4OTF Active WRITEAP: BC4MRS tWRAPDEN Figure 106 (page 193) 1tCK Figure 101 (page 190) tWR/tCK Figure 102 (page 191) WL + 2tCK + tWR/tCK Figure 102 (page 191) RL + WL + 4tCK 4tCK + 1tCK Figure 103 (page 191) WL + 2tCK + WR + 1tCK Figure 103 (page 191) 1tCK Figure 104 (page 192) WL + 4tCK + + WR + Idle REFRESH tREFPDEN Power-down REFRESH tXPDLL Greater of 10tCK or 24ns Figure 108 (page 194) MODE REGISTER SET tMRSPDEN tMOD Figure 107 (page 193) Idle Note: 1. If slow-exit mode precharge power-down is enabled and entered, ODT becomes asynchronous tANPD prior to CKE going LOW and remains asynchronous until tANPD + tXPDLL after CKE goes HIGH. Entering power-down disables the input and output buffers, excluding CK, CK#, ODT, CKE, and RESET#. NOP or DES commands are required until tCPDED has been satisfied, at which time all specified input/output buffers are disabled. The DLL should be in a locked state when power-down is entered for the fastest power-down exit timing. If the DLL is not locked during power-down entry, the DLL must be reset after exiting power-down mode for proper READ operation as well as synchronous ODT operation. During power-down entry, if any bank remains open after all in-progress commands are complete, the DRAM will be in active power-down mode. If all banks are closed after all in-progress commands are complete, the DRAM will be in precharge power-down mode. Precharge power-down mode must be programmed to exit with either a slow exit mode or a fast exit mode. When entering precharge power-down mode, the DLL is turned off in slow exit mode or kept on in fast exit mode. The DLL also remains on when entering active power-down. ODT has special timing constraints when slow exit mode precharge power-down is enabled and entered. Refer to Asynchronous ODT Mode (page 210) for detailed ODT usage requirements in slow 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 187 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode exit mode precharge power-down. A summary of the two power-down modes is listed in Table 82 (page 188). While in either power-down state, CKE is held LOW, RESET# is held HIGH, and a stable clock signal must be maintained. ODT must be in a valid state but all other input signals are "Don't Care." If RESET# goes LOW during power-down, the DRAM will switch out of power-down mode and go into the reset state. After CKE is registered LOW, CKE must remain LOW until tPD (MIN) has been satisfied. The maximum time allowed for powerdown duration is tPD (MAX) (9 x tREFI). The power-down states are synchronously exited when CKE is registered HIGH (with a required NOP or DES command). CKE must be maintained HIGH until tCKE has been satisfied. A valid, executable command may be applied after power-down exit latency, tXP, and tXPDLL have been satisfied. A summary of the power-down modes is listed below. For specific CKE-intensive operations, such as repeating a power-down-exit-to-refreshto-power-down-entry sequence, the number of clock cycles between power-down exit and power-down entry may not be sufficient to keep the DLL properly updated. In addition to meeting tPD when the REFRESH command is used between power-down exit and power-down entry, two other conditions must be met. First, tXP must be satisfied before issuing the REFRESH command. Second, tXPDLL must be satisfied before the next power-down may be entered. An example is shown in Figure 108 (page 194). Table 82: Power-Down Modes MR0[12] DLL State PowerDown Exit Active (any bank open) "Don't Care" On Fast tXP to any other valid command Precharged (all banks precharged) 1 On Fast tXP to any other valid command Slow tXPDLL DRAM State 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 0 Off 188 Relevant Parameters to commands that require the DLL to be locked (READ, RDAP, or ODT on); tXP to any other valid command Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Figure 98: Active Power-Down Entry and Exit T0 T1 T2 Ta1 Ta2 Ta3 Ta4 NOP NOP NOP Valid Ta0 CK# CK Command tCK tCH tCL NOP Valid NOP tPD tIS CKE Address tIH tIH tCKE tIS (MIN) Valid Valid tXP tCPDED Enter power-down mode Exit power-down mode Indicates break in time scale Don't Care Figure 99: Precharge Power-Down (Fast-Exit Mode) Entry and Exit T0 T1 T2 T4 T5 NOP NOP T3 Ta0 Ta1 NOP Valid CK# CK t t CK t CH Command NOP CL NOP t t CPDED t t IS CKE (MIN) IH CKE t IS t t PD Enter power-down mode XP Exit power-down mode Indicates break in time scale 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 189 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Figure 100: Precharge Power-Down (Slow-Exit Mode) Entry and Exit T0 T1 T2 T4 Ta NOP NOP T3 Ta1 Tb CK# CK tCK Command tCH tCL NOP PRE NOP tCKE tCPDED Valid 1 Valid 2 (MIN) tXP tIH tIS CKE tXPDLL tIS tPD Enter power-down mode Exit power-down mode Indicates break in time scale Notes: Don't Care 1. Any valid command not requiring a locked DLL. 2. Any valid command requiring a locked DLL. Figure 101: Power-Down Entry After READ or READ with Auto Precharge (RDAP) CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 READ/ RDAP NOP NOP NOP NOP NOP NOP NOP NOP Ta7 Ta8 Ta9 Ta10 Ta11 Ta12 CK Command NOP tIS NOP tCPDED CKE Address Valid tPD RL = AL + CL DQS, DQS# DQ BL8 DQ BC4 DI n DI DI n+1 n+2 DI n DI n+1 DI n+3 DI n+4 DI n+ 5 DI n+6 DI n+7 DI DI n+2 n+3 tRDPDEN Power-down or self refresh entry Indicates break in time scale 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 190 Transitioning Data Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Figure 102: Power-Down Entry After WRITE CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 WRITE NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Tb1 Tb2 Tb3 Tb4 CK Command NOP tIS NOP tCPDED CKE Address Valid tWR WL = AL + CWL tPD DQS, DQS# DQ BL8 DI n DI DI n+1 n+2 DI n+3 DQ BC4 DI n DI n+1 DI n+3 DI n+2 DI n+4 DI DI n+5 n+6 DI n+7 tWRPDEN Power-down or self refresh entry1 Indicates break in time scale Note: Transitioning Data Don't Care 1. CKE can go LOW 2tCK earlier if BC4MRS. Figure 103: Power-Down Entry After WRITE with Auto Precharge (WRAP) CK# T0 T1 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 Ta6 Ta7 Tb0 Tb1 Tb2 WRAP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Tb3 Tb4 CK Command tIS tCPDED CKE Address Valid A10 WR1 WL = AL + CWL tPD DQS, DQS# DQ BL8 DI n DI n+1 DI DI DI n+2 n+3 n+4 DQ BC4 DI n DI n+1 DI DI n+2 n+3 DI n+5 DI n+6 DI n+7 tWRAPDEN Start internal precharge Power-down or self refresh entry2 Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Transitioning Data Don't Care 1. tWR is programmed through MR0[11:9] and represents tWRmin (ns)/tCK rounded up to the next integer tCK. 2. CKE can go LOW 2tCK earlier if BC4MRS. 191 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Figure 104: REFRESH to Power-Down Entry T0 T1 T2 T3 NOP NOP Ta1 Ta0 Ta2 Tb0 CK# CK tCK Command tCH tCL REFRESH NOP tCPDED NOP tCKE Valid (MIN) tPD tIS CKE tREFPDEN tXP tRFC (MIN) (MIN)1 Indicates break in time scale Note: Don't Care 1. After CKE goes HIGH during tRFC, CKE must remain HIGH until tRFC is satisfied. Figure 105: ACTIVATE to Power-Down Entry T0 T1 T2 T3 NOP NOP T5 T4 T6 T7 CK# CK Command Address tCK tCH tCL ACTIVE Valid tCPDED tIS tPD CKE tACTPDEN Don't Care 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 192 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Figure 106: PRECHARGE to Power-Down Entry T0 T1 T2 T3 NOP NOP T4 T5 T6 T7 CK# CK tCK Command tCH tCL PRE All/single bank Address tCPDED tIS tPD CKE tPREPDEN Don't Care Figure 107: MRS Command to Power-Down Entry T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 CK# CK tCK Command MRS Address Valid tCH NOP tCPDED tCL NOP NOP NOP tMRSPDEN NOP tPD tIS CKE Indicates break in time scale 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 193 Don't Care Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Power-Down Mode Figure 108: Power-Down Exit to Refresh to Power-Down Entry T0 T1 T2 T3 T4 Ta0 NOP REFRESH Ta1 Tb0 CK# CK Command tCK tCH NOP tCL NOP NOP tCPDED NOP NOP tXP1 tIH tIS CKE tIS tPD tXPDLL2 Enter power-down mode Exit power-down mode Enter power-down mode Indicates break in time scale Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. tXP must be satisfied before issuing the command. 2. tXPDLL must be satisfied (referenced to the registration of power-down exit) before the next power-down can be entered. 194 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM RESET Operation RESET Operation The RESET signal (RESET#) is an asynchronous reset signal that triggers any time it drops LOW, and there are no restrictions about when it can go LOW. After RESET# goes LOW, it must remain LOW for 100ns. During this time, the outputs are disabled, ODT (RTT) turns off (High-Z), and the DRAM resets itself. CKE should be driven LOW prior to RESET# being driven HIGH. After RESET# goes HIGH, the DRAM must be re-initialized as though a normal power-up was executed. All counters, except refresh counters, on the DRAM are reset, and data stored in the DRAM is assumed unknown after RESET# has gone LOW. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 195 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM RESET Operation Figure 109: RESET Sequence System RESET (warm boot) Stable and valid clock T0 T1 tCK Tc0 Tb0 Ta0 Td0 CK# CK tCL tCL t CKSRX1 T = 100ns (MIN) RESET# tIOZ = 20ns T = 10ns (MIN) tIS Valid CKE tIS tIS Static LOW in case RTT_Nom is enabled at time Ta0, otherwise static HIGH or LOW ODT Valid tIS MRS MRS MRS MRS Address Code Code Code Code A10 Code Code Code Code BA0 = L BA1 = H BA2 = L BA0 = H BA1 = H BA2 = L BA0 = H BA1 = L BA2 = L BA0 = L BA1 = L BA2 = L Command NOP Valid ZQCL DM BA[2:0] DQS DQ RTT Valid A10 = H Valid Valid High-Z High-Z High-Z T = 500s (MIN) MR2 All voltage supplies valid and stable tMRD tMRD tXPR MR3 DRAM ready for external commands tMRD MR1 with DLL ENABLE tMOD MR0 with DLL RESET ZQCAL tZQinit tDLLK Normal operation Indicates break in time scale Note: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. The minimum time required is the longer of 10ns or 5 clocks. 196 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM On-Die Termination (ODT) On-Die Termination (ODT) On-die termination (ODT) is a feature that enables the DRAM to enable/disable and turn on/off termination resistance for each DQ, DQS, DQS#, and DM for the x4 and x8 configurations (and TDQS, TDQS# for the x8 configuration, when enabled). ODT is applied to each DQ, UDQS, UDQS#, LDQS, LDQS#, UDM, and LDM signal for the x16 configuration. ODT is designed to improve signal integrity of the memory channel by enabling the DRAM controller to independently turn on/off the DRAM's internal termination resistance for any grouping of DRAM devices. ODT is not supported during DLL disable mode (simple functional representation shown below). The switch is enabled by the internal ODT control logic, which uses the external ODT ball and other control information. Figure 110: On-Die Termination ODT To other circuitry such as RCV, ... VDDQ/2 RTT Switch DQ, DQS, DQS#, DM, TDQS, TDQS# Functional Representation of ODT The value of RTT (ODT termination resistance value) is determined by the settings of several mode register bits (see Table 88 (page 201)). The ODT ball is ignored while in self refresh mode (must be turned off prior to self refresh entry) or if mode registers MR1 and MR2 are programmed to disable ODT. ODT is comprised of nominal ODT and dynamic ODT modes and either of these can function in synchronous or asynchronous mode (when the DLL is off during precharge power-down or when the DLL is synchronizing). Nominal ODT is the base termination and is used in any allowable ODT state. Dynamic ODT is applied only during writes and provides OTF switching from no RTT or RTT,nom to RTT(WR). The actual effective termination, RTT(EFF), may be different from RTT targeted due to nonlinearity of the termination. For RTT(EFF) values and calculations, see Table 33 (page 61). Nominal ODT ODT (NOM) is the base termination resistance for each applicable ball; it is enabled or disabled via MR1[9, 6, 2] (see Mode Register 1 (MR1) Definition), and it is turned on or off via the ODT ball. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 197 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM On-Die Termination (ODT) Table 83: Truth Table - ODT (Nominal) Note 1 applies to the entire table MR1[9, 6, 2] ODT Pin DRAM Termination State DRAM State Notes 000 0 RTT,nom disabled, ODT off Any valid 2 000 1 RTT,nom disabled, ODT on Any valid except self refresh, read 3 000-101 0 RTT,nom enabled, ODT off Any valid 2 000-101 1 RTT,nom enabled, ODT on Any valid except self refresh, read 3 110 and 111 X RTT,nom reserved, ODT on or off Illegal Notes: 1. Assumes dynamic ODT is disabled (see Dynamic ODT (page 199) when enabled). 2. ODT is enabled and active during most writes for proper termination, but it is not illegal for it to be off during writes. 3. ODT must be disabled during reads. The RTT,nom value is restricted during writes. Dynamic ODT is applicable if enabled. Nominal ODT resistance RTT,nom is defined by MR1[9, 6, 2], as shown in Mode Register 1 (MR1) Definition. The R TT,nom termination value applies to the output pins previously mentioned. DDR3 SDRAM supports multiple RTT,nom values based on RZQ/n where n can be 2, 4, 6, 8, or 12 and RZQ is 240. RTT,nom termination is allowed any time after the DRAM is initialized, calibrated, and not performing read access, or when it is not in self refresh mode. Write accesses use RTT,nom if dynamic ODT (RTT(WR)) is disabled. If RTT,nom is used during writes, only RZQ/2, RZQ/4, and RZQ/6 are allowed (see Table 87 (page 200)). ODT timings are summarized in Table 84 (page 198), as well as listed in the Electrical Characteristics and AC Operating Conditions table. Examples of nominal ODT timing are shown in conjunction with the synchronous mode of operation in Synchronous ODT Mode (page 205). Table 84: ODT Parameters Symbol Description Begins at Definition for All DDR3L Speed Bins Unit tAON CWL + AL - 2 tCK CWL + AL - 2 tCK Defined to ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) tAOF tAONPD ODT asynchronous turn-on delay ODT registered HIGH RTT(ON) 2-8.5 ns tAOFPD ODT asynchronous turn-off delay ODT registered HIGH RTT(OFF) 2-8.5 ns ODT registered LOW 4tCK tCK ODTH4 ODT minimum HIGH time after ODT ODT registered HIGH assertion or write (BC4) or write registration with ODT HIGH ODTH8 ODT minimum HIGH time after write (BL8) Write registration with ODT HIGH ODT registered LOW 6tCK tCK tAON ODT turn-on relative to ODTLon completion Completion of ODTLon RTT(ON) See Electrical Characteristics and AC Operating Conditions table ps tAOF ODT turn-off relative to ODTLoff completion Completion of ODTLoff RTT(OFF) 0.5tCK 0.2tCK tCK 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 198 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Dynamic ODT Dynamic ODT In certain application cases, and to further enhance signal integrity on the data bus, it is desirable that the termination strength of the DDR3 SDRAM can be changed without issuing an MRS command, essentially changing the ODT termination on the fly. With dynamic ODT RTT(WR)) enabled, the DRAM switches from nominal ODT RTT,nom) to dynamic ODT RTT(WR)) when beginning a WRITE burst and subsequently switches back to nominal ODT RTT,nom) at the completion of the WRITE burst. This requirement is supported by the dynamic ODT feature, as described below. Dynamic ODT Special Use Case When DDR3 devices are architect as a single rank memory array, dynamic ODT offers a special use case: the ODT ball can be wired high (via a current limiting resistor preferred) by having RTT,nom disabled via MR1 and RTT(WR) enabled via MR2. This will allow the ODT signal not to have to be routed yet the DRAM can provide ODT coverage during write accesses. When enabling this special use case, some standard ODT spec conditions may be violated: ODT is sometimes suppose to be held low. Such ODT spec violation (ODT not LOW) is allowed under this special use case. Most notably, if Write Leveling is used, this would appear to be a problem since RTT(WR) can not be used (should be disabled) and RTT(NOM) should be used. For Write leveling during this special use case, with the DLL locked, then RTT(NOM) maybe enabled when entering Write Leveling mode and disabled when exiting Write Leveling mode. More so, R TT(NOM) must be enabled when enabling Write Leveling, via same MR1 load, and disabled when disabling Write Leveling, via same MR1 load if RTT(NOM) is to be used. ODT will turn-on within a delay of ODTLon + tAON + tMOD + 1CK (enabling via MR1) or turn-off within a delay of ODTLoff + tAOF + tMOD + 1CK. As seen in the table below, between the Load Mode of MR1 and the previously specified delay, the value of ODT is uncertain. this means the DQ ODT termination could turn-on and then turn-off again during the period of stated uncertainty. Table 85: Write Leveling with Dynamic ODT Special Case Begin RTT,nom Uncertainty MR1 load mode command: End RTT,nom Uncertainty ODTLon + tAON ODTLoff + tAOFF + tMOD + tMOD + 1CK I/Os RTT,nom Final State DQS, DQS# Drive RTT,nom value DQs No RTT,nom DQS, DQS# No RTT,nom DQs No RTT,nom Enable Write Leveling and RTT(NOM) MR1 load mode command: + 1CK Disable Write Leveling and RTT(NOM) Functional Description The dynamic ODT mode is enabled if either MR2[9] or MR2[10] is set to 1. Dynamic ODT is not supported during DLL disable mode so RTT(WR) must be disabled. The dynamic ODT function is described below: * Two RTT values are available--RTT,nom and RTT(WR). - The value for RTT,nom is preselected via MR1[9, 6, 2]. - The value for RTT(WR) is preselected via MR2[10, 9]. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 199 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Dynamic ODT * During DRAM operation without READ or WRITE commands, the termination is controlled. - Nominal termination strength RTT,nom is used. - Termination on/off timing is controlled via the ODT ball and latencies ODTLon and ODTLoff. * When a WRITE command (WR, WRAP, WRS4, WRS8, WRAPS4, WRAPS8) is registered, and if dynamic ODT is enabled, the ODT termination is controlled. - A latency of ODTLcnw after the WRITE command: termination strength R TT,nom switches to RTT(WR) - A latency of ODTLcwn8 (for BL8, fixed or OTF) or ODTLcwn4 (for BC4, fixed or OTF) after the WRITE command: termination strength R TT(WR) switches back to RTT,nom. - On/off termination timing is controlled via the ODT ball and determined by ODTLon, ODTLoff, ODTH4, and ODTH8. - During the tADC transition window, the value of RTT is undefined. ODT is constrained during writes and when dynamic ODT is enabled (see the table below, Dynamic ODT Specific Parameters). ODT timings listed in the ODT Parameters table in On-Die Termination (ODT) also apply to dynamic ODT mode. Table 86: Dynamic ODT Specific Parameters Definition for All DDR3L Speed Bins Unit Symbol Description Begins at Defined to ODTLcnw Change from RTT,nom to RTT(WR) Write registration RTT switched from RTT,nom to RTT(WR) WL - 2 tCK ODTLcwn4 Change from RTT(WR) to RTT,nom (BC4) Write registration RTT switched from RTT(WR) to RTT,nom 4tCK + ODTL off tCK ODTLcwn8 Change from RTT(WR) to RTT,nom (BL8) Write registration RTT switched from RTT(WR) to RTT,nom 6tCK + ODTL off tCK tADC RTT change skew ODTLcnw completed RTT transition complete 0.5tCK 0.2tCK tCK Table 87: Mode Registers for RTT,nom MR1 (RTT,nom) M9 M6 M2 RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode Restriction 0 0 0 Off Off n/a 0 0 1 RZQ/4 60 Self refresh 0 1 0 RZQ/2 120 0 1 1 RZQ/6 40 1 0 0 RZQ/12 20 1 0 1 RZQ/8 30 1 1 0 Reserved Reserved 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 200 Self refresh, write n/a Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Dynamic ODT Table 87: Mode Registers for RTT,nom (Continued) MR1 (RTT,nom) M9 M6 M2 RTT,nom (RZQ) RTT,nom (Ohm) RTT,nom Mode Restriction 1 1 1 Reserved Reserved n/a Note: 1. RZQ = 240. If RTT,nom is used during WRITEs, only RZQ/2, RZQ/4, RZQ/6 are allowed. Table 88: Mode Registers for RTT(WR) MR2 (RTT(WR)) M10 M9 0 0 RTT(WR) (RZQ) Dynamic ODT off: WRITE does not affect RTT,nom RTT(WR) (Ohm) 0 1 RZQ/4 60 1 0 RZQ/2 120 1 1 Reserved Reserved Table 89: Timing Diagrams for Dynamic ODT Figure and Page Title Figure 111 (page 202) Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 Figure 112 (page 202) Dynamic ODT: Without WRITE Command Figure 113 (page 203) Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 Figure 114 (page 204) Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 Figure 115 (page 204) Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 201 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 111: Dynamic ODT: ODT Asserted Before and After the WRITE, BC4 T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP WRS4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command Address Valid ODTH4 ODTLoff ODTH4 ODT ODTLon ODTLcwn4 tAON tADC (MIN) RTT tADC (MIN) tAON tAOF (MIN) RTT(WR) RTT,nom tADC (MAX) (MIN) RTT,nom tADC (MAX) tAOF (MAX) (MAX) ODTLcnw DQS, DQS# DQ DI n WL DI n+ 1 DI n+ 2 DI n+ 3 Transitioning Notes: Don't Care 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled. 2. ODTH4 applies to first registering ODT HIGH and then to the registration of the WRITE command. In this example, ODTH4 is satisfied if ODT goes LOW at T8 (four clocks after the WRITE command). 202 Figure 112: Dynamic ODT: Without WRITE Command Command T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Valid Address ODTH4 ODTLon ODTLoff ODT tAON tAOF (MAX) (MIN) RTT,nom RTT tAON (MIN) tAOF (MAX) DQS, DQS# DQ Transitioning Notes: Don't Care 1. AL = 0, CWL = 5. RTT,nom is enabled and RTT(WR) is either enabled or disabled. 2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW; in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal. 4Gb: x4, x8, x16 DDR3L SDRAM Dynamic ODT Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. CK# CK 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 113: Dynamic ODT: ODT Pin Asserted Together with WRITE Command for 6 Clock Cycles, BL8 T0 T1 T2 NOP WRS8 NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command ODTLcnw Address Valid ODTH8 ODTLoff ODTLon ODT tADC tAOF (MAX) (MIN) RTT(WR) RTT tAON (MIN) tAOF (MAX) ODTLcwn8 DQS, DQS# WL DI b DQ 203 DI b+1 DI b+2 DI b+3 DI b+ 4 DI b+5 DI b+6 DI b+ 7 Transitioning Notes: Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Dynamic ODT Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 1. Via MRS or OTF; AL = 0, CWL = 5. If RTT,nom can be either enabled or disabled, ODT can be HIGH. RTT(WR) is enabled. 2. In this example, ODTH8 = 6 is satisfied exactly. 4Gb: x4, x8, x16 DDR3L SDRAM Dynamic ODT Figure 114: Dynamic ODT: ODT Pin Asserted with WRITE Command for 6 Clock Cycles, BC4 T0 T1 T2 NOP WRS4 NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command ODTLcnw Address Valid ODTH4 ODTLoff ODT ODTLon tADC tADC (MAX) RTT(WR) RTT tAON tADC (MIN) tAOF (MIN) RTT,nom tAOF (MAX) (MIN) (MAX) ODTLcwn4 DQS, DQS# DI n DQ DI n+1 DI n+2 DI n+3 WL Transitioning Notes: Don't Care 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom and RTT(WR) are enabled. 2. ODTH4 is defined from ODT registered HIGH to ODT registered LOW, so in this example, ODTH4 is satisfied. ODT registered LOW at T5 is also legal. Figure 115: Dynamic ODT: ODT Pin Asserted with WRITE Command for 4 Clock Cycles, BC4 T0 T1 T2 NOP WRS4 NOP T3 T4 T5 T6 T7 T8 T9 T10 T11 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command ODTLcnw Address Valid ODTLoff ODTH4 ODT tADC ODTLon tAOF (MAX) (MIN) RTT(WR) RTT tAON tAOF (MIN) (MAX) ODTLcwn4 DQS, DQS# WL DI n DQ DI n+1 DI n+2 DI n+3 Transitioning Notes: 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Don't Care 1. Via MRS or OTF. AL = 0, CWL = 5. RTT,nom can be either enabled or disabled. If disabled, ODT can remain HIGH. RTT(WR) is enabled. 2. In this example ODTH4 = 4 is satisfied exactly. 204 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Synchronous ODT Mode Synchronous ODT Mode Synchronous ODT mode is selected whenever the DLL is turned on and locked and when either RTT,nom or RTT(WR) is enabled. Based on the power-down definition, these modes are: * * * * * Any bank active with CKE HIGH Refresh mode with CKE HIGH Idle mode with CKE HIGH Active power-down mode (regardless of MR0[12]) Precharge power-down mode if DLL is enabled by MR0[12] during precharge powerdown ODT Latency and Posted ODT In synchronous ODT mode, RTT turns on ODTLon clock cycles after ODT is sampled HIGH by a rising clock edge and turns off ODTLoff clock cycles after ODT is registered LOW by a rising clock edge. The actual on/off times varies by tAON and tAOF around each clock edge (see Table 90 (page 206)). The ODT latency is tied to the WRITE latency (WL) by ODTLon = WL - 2 and ODTLoff = WL - 2. Since write latency is made up of CAS WRITE latency (CWL) and additive latency (AL), the AL programmed into the mode register (MR1[4, 3]) also applies to the ODT signal. The device's internal ODT signal is delayed a number of clock cycles defined by the AL relative to the external ODT signal. Thus, ODTLon = CWL + AL - 2 and ODTLoff = CWL + AL - 2. Timing Parameters Synchronous ODT mode uses the following timing parameters: ODTLon, ODTLoff, ODTH4, ODTH8, tAON, and tAOF. The minimum R TT turn-on time (tAON [MIN]) is the point at which the device leaves High-Z and ODT resistance begins to turn on. Maximum RTT turn-on time (tAON [MAX]) is the point at which ODT resistance is fully on. Both are measured relative to ODTLon. The minimum R TT turn-off time (tAOF [MIN]) is the point at which the device starts to turn off ODT resistance. The maximum R TT turn off time (tAOF [MAX]) is the point at which ODT has reached High-Z. Both are measured from ODTLoff. When ODT is asserted, it must remain HIGH until ODTH4 is satisfied. If a WRITE command is registered by the DRAM with ODT HIGH, then ODT must remain HIGH until ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (see Figure 117 (page 207)). ODTH4 and ODTH8 are measured from ODT registered HIGH to ODT registered LOW or from the registration of a WRITE command until ODT is registered LOW. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 205 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 90: Synchronous ODT Parameters Symbol Description Begins at Definition for All DDR3L Speed Bins Unit tAON CWL + AL - 2 tCK Defined to ODTLon ODT synchronous turn-on delay ODT registered HIGH RTT(ON) ODTLoff ODT synchronous turn-off delay ODT registered HIGH RTT(OFF) tAOF CWL +AL - 2 tCK ODTH4 ODT minimum HIGH time after ODT assertion or WRITE (BC4) ODT registered HIGH or write registration with ODT HIGH ODT registered LOW 4tCK tCK ODTH8 ODT minimum HIGH time after WRITE Write registration with ODT HIGH (BL8) ODT registered LOW 6tCK tCK tAON ODT turn-on relative to ODTLon completion Completion of ODTLon RTT(ON) See Electrical Characteristics and AC Operating Conditions table ps tAOF ODT turn-off relative to ODTLoff completion Completion of ODTLoff RTT(OFF) 0.5tCK 0.2tCK tCK 206 Figure 116: Synchronous ODT T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 CK# CK AL = 3 AL = 3 CWL - 2 ODT ODTH4 (MIN) ODTLoff = CWL + AL - 2 ODTLon = CWL + AL - 2 tAON t (MIN) AOF (MIN) RTT,nom RTT tAON tAOF (MAX) Transitioning Note: 1. AL = 3; CWL = 5; ODTLon = WL = 6.0; ODTLoff = WL - 2 = 6. RTT,nom is enabled. (MAX) Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Synchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. CKE 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 117: Synchronous ODT (BC4) T0 T1 T2 NOP NOP NOP T3 T4 T5 T6 T7 NOP NOP NOP NOP WRS4 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK CKE Command ODTH4 ODTH4 (MIN) ODTH4 ODT ODTLoff = WL - 2 ODTLoff = WL - 2 ODTLon = WL - 2 ODTLon = WL - 2 tAON tAOF (MIN) tAON (MIN) RTT,nom RTT tAON tAOF (MAX) tAON (MAX) tAOF tAOF (MIN) (MAX) (MAX) Transitioning Notes: (MIN) RTT,nom Don't Care 207 1. 2. 3. 4. WL = 7. RTT,nom is enabled. RTT(WR) is disabled. ODT must be held HIGH for at least ODTH4 after assertion (T1). ODT must be kept HIGH ODTH4 (BC4) or ODTH8 (BL8) after the WRITE command (T7). ODTH is measured from ODT first registered HIGH to ODT first registered LOW or from the registration of the WRITE command with ODT HIGH to ODT registered LOW. 5. Although ODTH4 is satisfied from ODT registered HIGH at T6, ODT must not go LOW before T11 as ODTH4 must also be satisfied from the registration of the WRITE command at T7. 4Gb: x4, x8, x16 DDR3L SDRAM Synchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Synchronous ODT Mode ODT Off During READs Because the device cannot terminate and drive at the same time, RTT must be disabled at least one-half clock cycle before the READ preamble by driving the ODT ball LOW (if either RTT,nom or RTT(WR) is enabled). RTT may not be enabled until the end of the postamble, as shown in the following example. Note: ODT may be disabled earlier and enabled later than shown in Figure 118 (page 209). 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 208 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 118: ODT During READs T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 Command READ NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP Address Valid CK# CK ODTLon = CWL + AL - 2 ODTLoff = CWL + AL - 2 ODT tAOF (MIN) RTT,nom RTT,nom RTT RL = AL + CL tAOF tAON (MAX) (MAX) DQS, DQS# DQ DI b DI b+1 DI b+2 DI b+3 DI b+4 DI b+5 DI b+6 DI b+7 Transitioning Note: Don't Care 1. ODT must be disabled externally during READs by driving ODT LOW. For example, CL = 6; AL = CL - 1 = 5; RL = AL + CL = 11; CWL = 5; ODTLon = CWL + AL - 2 = 8; ODTLoff = CWL + AL - 2 = 8. RTT,nom is enabled. RTT(WR) is a "Don't Care." 209 4Gb: x4, x8, x16 DDR3L SDRAM Synchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous ODT Mode Asynchronous ODT Mode Asynchronous ODT mode is available when the DRAM runs in DLL on mode and when either RTT,nom or RTT(WR) is enabled; however, the DLL is temporarily turned off in precharged power-down standby (via MR0[12]). Additionally, ODT operates asynchronously when the DLL is synchronizing after being reset. See Power-Down Mode (page 187) for definition and guidance over power-down details. In asynchronous ODT timing mode, the internal ODT command is not delayed by AL relative to the external ODT command. In asynchronous ODT mode, ODT controls RTT by analog time. The timing parameters tAONPD and tAOFPD replace ODTLon/tAON and ODTLoff/tAOF, respectively, when ODT operates asynchronously. The minimum RTT turn-on time (tAONPD [MIN]) is the point at which the device termination circuit leaves High-Z and ODT resistance begins to turn on. Maximum RTT turnon time (tAONPD [MAX]) is the point at which ODT resistance is fully on. tAONPD (MIN) and tAONPD (MAX) are measured from ODT being sampled HIGH. The minimum RTT turn-off time (tAOFPD [MIN]) is the point at which the device termination circuit starts to turn off ODT resistance. Maximum RTT turn-off time (tAOFPD [MAX]) is the point at which ODT has reached High-Z. tAOFPD (MIN) and tAOFPD (MAX) are measured from ODT being sampled LOW. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 210 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 119: Asynchronous ODT Timing with Fast ODT Transition T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 CK# CK CKE tIH tIS tIH tIS ODT tAONPD tAOFPD (MIN) (MIN) RTT,nom RTT tAONPD (MAX) tAOFPD (MAX) Transitioning Note: Don't Care 1. AL is ignored. Table 91: Asynchronous ODT Timing Parameters for All Speed Bins 211 Symbol Description Min Max Unit tAONPD Asynchronous RTT turn-on delay (power-down with DLL off) 2 8.5 ns tAOFPD Asynchronous RTT turn-off delay (power-down with DLL off) 2 8.5 ns 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous ODT Mode Synchronous to Asynchronous ODT Mode Transition (Power-Down Entry) There is a transition period around power-down entry (PDE) where the DRAM's ODT may exhibit either synchronous or asynchronous behavior. This transition period occurs if the DLL is selected to be off when in precharge power-down mode by the setting MR0[12] = 0. Power-down entry begins tANPD prior to CKE first being registered LOW, and ends when CKE is first registered LOW. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. If a REFRESH command has been issued, and it is in progress when CKE goes LOW, power-down entry ends tRFC after the REFRESH command, rather than when CKE is first registered LOW. Power-down entry then becomes the greater of tANPD and tRFC - REFRESH command to CKE registered LOW. ODT assertion during power-down entry results in an RTT change as early as the lesser of tAONPD (MIN) and ODTLon x tCK + tAON (MIN), or as late as the greater of tAONPD (MAX) and ODTLon x tCK + tAON (MAX). ODT de-assertion during power-down entry can result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff x tCK + tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff x tCK + tAOF (MAX). Table 92 (page 213) summarizes these parameters. If AL has a large value, the uncertainty of the state of RTT becomes quite large. This is because ODTLon and ODTLoff are derived from the WL; and WL is equal to CWL + AL. Figure 120 (page 213) shows three different cases: * ODT_A: Synchronous behavior before tANPD. * ODT_B: ODT state changes during the transition period with tAONPD (MIN) < ODTLon x tCK + tAON (MIN) and tAONPD (MAX) > ODTLon x tCK + tAON (MAX). * ODT_C: ODT state changes after the transition period with asynchronous behavior. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 212 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Table 92: ODT Parameters for Power-Down (DLL Off) Entry and Exit Transition Period Description Min Power-down entry transition period (power-down entry) Max Greater of: tANPD or tRFC tANPD Power-down exit transition period (power-down exit) - refresh to CKE LOW + tXPDLL ODT to RTT turn-on delay (ODTLon = WL - 2) Lesser of: tAONPD (MIN) (2ns) or ODTLon x tCK + tAON (MIN) Greater of: tAONPD (MAX) (8.5ns) or ODTLon x tCK + tAON (MAX) ODT to RTT turn-off delay (ODTLoff = WL - 2) Lesser of: tAOFPD (MIN) (2ns) or ODTLoff x tCK + tAOF (MIN) Greater of: tAOFPD (MAX) (8.5ns) or ODTLoff x tCK + tAOF (MAX) tANPD WL - 1 (greater of ODTLoff + 1 or ODTLon + 1) Figure 120: Synchronous to Asynchronous Transition During Precharge Power-Down (DLL Off) Entry T0 T1 T2 T3 T4 T5 T6 T7 NOP REF NOP NOP NOP NOP NOP NOP T8 T9 T10 T11 T12 T13 Ta0 Ta1 Ta2 Ta3 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK 213 CKE Command tRFC (MIN) tANPD ODT A synchronous tAOF DRAM RTT A synchronous (MIN) RTT,nom ODTLoff tAOF ODTLoff + tAOFPD (MIN) (MAX) tAOFPD ODT B asynchronous or synchronous tAOFPD DRAM RTT B asynchronous or synchronous (MAX) (MIN) RTT,nom ODTLoff + tAOFPD (MAX) ODT C asynchronous tAOFPD DRAM RTT C asynchronous (MIN) RTT,nom tAOFPD Indicates break in time scale Note: 1. AL = 0; CWL = 5; ODTL(off) = WL - 2 = 3. Transitioning (MAX) Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous ODT Mode Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. PDE transition period 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit) The DRAM's ODT can exhibit either asynchronous or synchronous behavior during power-down exit (PDX). This transition period occurs if the DLL is selected to be off when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins tANPD prior to CKE first being registered HIGH, and ends tXPDLL after CKE is first registered HIGH. tANPD is equal to the greater of ODTLoff + 1tCK or ODTLon + 1tCK. The transition period is tANPD + tXPDLL. ODT assertion during power-down exit results in an RTT change as early as the lesser of tAONPD (MIN) and ODTLon x tCK + tAON (MIN), or as late as the greater of tAONPD (MAX) and ODTLon x tCK + tAON (MAX). ODT de-assertion during power-down exit may result in an RTT change as early as the lesser of tAOFPD (MIN) and ODTLoff x tCK + tAOF (MIN), or as late as the greater of tAOFPD (MAX) and ODTLoff x tCK + tAOF (MAX). Table 92 (page 213) summarizes these parameters. If AL has a large value, the uncertainty of the RTT state becomes quite large. This is because ODTLon and ODTLoff are derived from WL, and WL is equal to CWL + AL. Figure 121 (page 215) shows three different cases: * ODT C: Asynchronous behavior before tANPD. * ODT B: ODT state changes during the transition period, with tAOFPD (MIN) < ODTLoff x tCK + tAOF (MIN), and ODTLoff x tCK + tAOF (MAX) > tAOFPD (MAX). * ODT A: ODT state changes after the transition period with synchronous response. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 214 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 121: Asynchronous to Synchronous Transition During Precharge Power-Down (DLL Off) Exit T0 T1 T2 Ta0 Ta1 Ta2 Ta3 Ta4 Ta5 NOP NOP NOP NOP NOP Ta6 Tb0 Tb1 Tb2 Tc0 Tc1 Tc2 Td0 Td1 NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK CKE COMMAND tXPDLL tANPD PDX transition period ODT A asynchronous tAOFPD (MIN) RTT,nom tAOFPD ODTLoff + tAOF (MIN) (MAX) tAOFPD ODT B asynchronous or synchronous RTT B asynchronous or synchronous tAOFPD (MAX) (MIN) RTT,nom ODTLoff + tAOF (MAX) ODTLoff ODT C synchronous DRAM RTT C synchronous tAOF (MAX) tAOF (MIN) RTT,nom 215 Indicates break in time scale Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Note: 1. CL = 6; AL = CL - 1; CWL = 5; ODTLoff = WL - 2 = 8. Transitioning Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) DRAM RTT A asynchronous 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) Asynchronous to Synchronous ODT Mode Transition (Short CKE Pulse) If the time in the precharge power-down or idle states is very short (short CKE LOW pulse), the power-down entry and power-down exit transition periods overlap. When overlap occurs, the response of the DRAM's RTT to a change in the ODT state can be synchronous or asynchronous from the start of the power-down entry transition period to the end of the power-down exit transition period, even if the entry period ends later than the exit period. If the time in the idle state is very short (short CKE HIGH pulse), the power-down exit and power-down entry transition periods overlap. When this overlap occurs, the response of the DRAM's RTT to a change in the ODT state may be synchronous or asynchronous from the start of power-down exit transition period to the end of the powerdown entry transition period. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 216 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN Figure 122: Transition Period for Short CKE LOW Cycles with Entry and Exit Period Overlapping T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4 REF NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command CKE PDE transition period tANPD (MIN) PDX transition period tANPD tXPDLL Short CKE low transition period (R TT change asynchronous or synchronous) Indicates break in time scale 217 Note: Transitioning Don't Care 1. AL = 0, WL = 5, tANPD = 4. Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved. Figure 123: Transition Period for Short CKE HIGH Cycles with Entry and Exit Period Overlapping T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 Ta0 Ta1 Ta2 Ta3 Ta4 NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP NOP CK# CK Command CKE tANPD tXPDLL tANPD Short CKE HIGH transition period (RTT change asynchronous or synchonous) Indicates break in time scale Note: 1. AL = 0, WL = 5, tANPD = 4. Transitioning Don't Care 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) tRFC 4Gb: x4, x8, x16 DDR3L SDRAM Asynchronous to Synchronous ODT Mode Transition (PowerDown Exit) 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-4000 www.micron.com/products/support Sales inquiries: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. 09005aef85af8fa8 4Gb_DDR3L.pdf - Rev. R 09/18 EN 218 Micron Technology, Inc. reserves the right to change products or specifications without notice. (c) 2017 Micron Technology, Inc. All rights reserved.