Ordering number:ENN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions * Adoption of FBET, MBIT processes. * High breakdown voltage and large current capacity. * Ultrasmall size making it easy to provide highdensity hybrid ICs. unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 0.4 1.0 2.5 4.25max 1.5 0.5 3 1.5 2 1 0.4 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Conditions Ratings Unit VCBO VCEO (-)180 V (-)160 V VEBO IC (-)6 V (-)1.5 A ICP (-)2.5 Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 500 Moutned on ceramic board (250mm2x0.8mm) A mW 1.5 W 150 C -55 to +150 C Electrical Characteristics at Ta = 25C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(-)120V, IE=0 (-)1 A Emitter Cutoff Current IEBO VEB=(-)4V, IC=0 (-)1 A hFE1 VCE=(-)5V, IC=(-)100mA hFE2 VCE=(-)5V, IC=(-)10mA DC Current Gain 100* 80 * : The 2SA1419/2SC3649 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 S 280 200 to 400 Marking 2SA1419 : AE 2SC3649 : CE 400* Continued on next page. hFE rank : R, S, T Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/4 2SA1419/2SC3649 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Output Capacitance Ratings Conditions min typ VCE=(-)10V, IC=(-)50mA Cob VCB=(-)10V, f=1MHz max 120 MHz (22) pF 14 Collector-to-Emitter Saturation Voltage VCE(sat) IC=(-)500mA, IB=(-)50mA Base-to-Emitter Saturation Voltage VBE(sat) IC=(-)500mA, IB=(-)50mA Unit pF (-200) (-500) mV 130 450 mV (-)0.85 (-)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(-)10A, IE=0 (-)180 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO IE=(-)10A, IC=0 (-)160 V Emitter-to-Base Breakdown Votage Turn-ON Time ton Stotage Time V See specified Test Circuit. tstg Fall Time (-)6 See specified Test Circuit. tf See specified Test Circuit. (40) ns 40 ns (0.7) s 1.2 s (40) ns 80 ns Switching Time Test Circuit IB1 PW=20s D.C.1% IB2 INPUT RB RL VR 50 + + 100F 470F 100V --5V IC=10IB1=--10IB2=0.7A (For PNP, the polarity is reversed.) IC -- VCE --1.8 2SC3649 1.6 --0.6 A --80m A --60m A m 0 4 -A --20m A --10m m 5 -- A --0.4 --2mA --0.2 --1mA --1.2 --1.0 --0.8 --2 --3 20mA 1.0 10mA 5mA 0.8 0.6 2mA 0.4 1mA --4 0 --5 Collector-to-Emitter Voltage, VCE - V --1.0 1.2 0.2 IB=0 --1 50mA 40mA 30mA 1.4 IB=0 0 1 IC -- VCE --0.6 --0.4 --2.0mA --1.5mA --1.0mA A m mA 0.8 4.5 Collector Current, IC - A Collector Current, IC - A 2SA1419 --0.8 3 5 ITR03572 2SC3649 4.0mA 3.5mA 3.0mA 2.5mA 0.6 2.0mA 1.5mA 0.4 1.0mA 0.2 --0.2 --0.5mA 0 0 4 IC -- VCE 1.0 A --5.0m m --4.5 A --4.0mA --3.5mA --3.0mA --2.5mA 2 Collector-to-Emitter Voltage, VCE - V ITR03571 5.0 --1.4 Collector Current, IC - A Collector Current, IC - A --1.6 0 0 IC -- VCE 1.8 2SA1419 IB=0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE - V 0.5mA --50 ITR03573 0 IB=0 0 10 20 30 40 Collector-to-Emitter Voltage, VCE - V 50 ITR03574 No.2007-2/4 2SA1419/2SC3649 2SC3649 VCE=5V --0.4 hFE -- IC 1000 2SA1419 VCE=--5V 7 3 Ta=75C 2 25C --25C 100 7 0.2 0.4 3 0.6 0.8 5 Ta=75C 3 2 25C --25C 7 5 3 2 10 --5 --7--0.01 --2 --3 --5 --7--0.1 --2 --3 --5 --7 --1.0 --2 --3 Collector Current, IC - A ITR03577 7 0.01 2 3 5 7 0.1 2 5 7 1.0 2 3 ITR03578 Cob -- VCB 100 2SA1419 / 2SC3649 2SA1419 / 2SC3649 7 3 Output Capacitance, Cob - pF Gain-Bandwidth Product, fT - MHz 3 Collector Current, IC - A fT -- IC 5 2SC3649 2 2SA1419 100 7 5 3 2 5 2SA 3 141 9 2 2SC 364 9 10 7 5 10 0.01 For PNP, minus sign is omitted. 2 3 5 7 0.1 2 3 Collector Current, IC - A 5 7 3 1.0 2 1.0 ITR03579 3 5 7 2 10 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 7 100 ITR03580 2SC3649 IC / IB=10 2 --1000 5 VCE(sat) -- IC 3 2SA1419 IC / IB=10 2 For PNP, minus sign is omitted. 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 3 Collector-to-Emitter Saturation Voltage, VCE (sat) - mV 1.2 ITR03576 2SC3649 VCE=5V 7 2 1000 7 5 3 2 25C --100 7 C Ta=75 5 --25C 3 2 1.0 hFE -- IC 1000 100 5 10 0 Base-to-Emitter Voltage, VBE - V DC Current Gain, hFE DC Current Gain, hFE 5 0.4 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE - V ITR03575 0 0.8 C 25C --25C Ta= 7 5C 25C --25C --0.8 1.2 Ta= 75 Collector Current, IC - A --1.2 0 IC -- VBE 1.6 2SA1419 VCE=--5V Collector Current, IC - A --1.6 IC -- VBE 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC - A 2 3 ITR03581 7 5 3 2 25C 100 7 Ta=75C 5 --25C 3 2 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 3 ITR03582 No.2007-3/4 2SA1419/2SC3649 VBE(sat) -- IC --10 5 3 2 Ta=--25C --1.0 25C 5 7 --0.01 2 3 5 75C 7 2 3 5 --0.1 Collector Current, IC - A 7 --1.0 2 DC 7 0.01 2 3 5 7 0.1 75C 2 3 n For PNP, minus sign is omitted. Single Pulse Ta=25C Mounted on ceramic board (250mm2x0.8mm) 3 5 7 10 2 3 7 1.0 2 3 ITR03584 PC -- Ta 2SA1419 / 2SC3649 op 0.1 7 5 5 1.6 tio 2 25C 5 1.8 era 7 1.0 7 Collector Current, IC - A Collector Dissipation, PC - W Collector Current, IC - A Ta=--25C ITR03583 1 10 ms m s 10 0m s 3 2 0.01 7 5 2 2SA1419 / 2SC3649 ICP=2.5A IC=1.5A 1.0 7 5 3 2 3 3 3 ASO 5 3 2 5 1.0 7 3 2SC3649 IC / IB=10 7 Base-to-Emitter Saturation Voltage, VBE (sat) - V Base-to-Emitter Saturation Voltage, VBE (sat) - V 7 VBE(sat) -- IC 10 2SA1419 IC / IB=10 5 7 100 Collector-to-Emitter Voltage, VCE - V M 1.4 ou nt 1.2 ed on 1.0 ce ra m ic 0.8 0.6 No h bo ar d( 25 0m eat s 0.4 ink m2 x0 .8m m ) 0.2 2 3 ITR03585 0 0 20 40 60 80 100 120 Ambient Temperature, Ta - C 140 160 ITR03586 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2003. Specifications and information herein are subject to change without notice. PS No.2007-4/4