O3103TN (KT)/71598HA (KT)/4277TA, TS No.2007-1/4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
Ordering number:ENN2007A
2SA1419/2SC3649
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
1.6
0.5
0.4
1.5
1.0 2.5
4.25max
3.0
1.5
0.4
0.75
321
Electrical Characteristics at Ta = 25˚C
Package Dimensions
unit:mm
2038A
[2SA1419/2SC3649]
Features
· Adoption of FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Ultrasmall size making it easy to provide high-
density hybrid ICs.
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V021)–(= E0=1)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1)–(Aµ
niaGtnerruCCD hEF 1V
EC I,V5)–(= CAm001)–(=*001*004
hEF 2V
EC I,V5)–(= CAm01)–(=08
( ) : 2SA1419
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 081)–(V
egatloVrettimE-ot-rotcelloCV
OEC 061)–(V
egatloVesaB-ot-rettimEV
OBE 6)–(V
tnerruCrotcelloCI
C5.1)–(A
)esluP(tnerruCrotcelloCI
PC 5.2)–(A
noitapissiDrotcelloCP
C005Wm
5.1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
Moutned on ceramic board (250mm2×0.8mm) ˚C
˚C
* : The 2SA1419/2SC3649 are classified by 100mA hFE as follows : Continued on next page.
knaRRST
hEF 002ot001082S041004ot002
Marking 2SA1419 : AE hFE rank : R, S, T
2SC3649 : CE
No.2007-2/4
2SA1419/2SC3649
Continued from preceding page.
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm05)–(=021zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(= )22(Fp
41Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am005)–(= BAm05)–(= )002–()005–(Vm
031054Vm
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am005)–(= BAm05)–(=58.0)–(2.1)–(V
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01)–(= E0=081)–(V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1)–(= EB =∞061)–(V
egatoVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01)–(= C0=6)–(V
emiTNO-nruTt
no .tiucriCtseTdeificepseeS )04(sn
04sn
emiTegatotSt
gts .tiucriCtseTdeificepseeS )7.0(sµ
2.1sµ
emiTllaFt
f.tiucriCtseTdeificepseeS )04(sn
08sn
Switching Time Test Circuit
INPUT
100V
50Ω
RL
100µF 470µF
--5V
IC=10IB1=--10IB2=0.7A
(For PNP, the polarity is reversed.)
++
VR
PW=20µs
D.C.≤1%
RB
IB1
IB2
ITR03571
IC -- VCE
0--2--1 --4--3 --5 214350
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
0
--0.2
--0.6
--0.4
--0.8
--1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0.2
0.6
0.4
0.8
1.0
0
ITR03572
IC -- VCE
10 20 30 40 500
ITR03574
ITR03573
--
40
--
30
--
50
--
10
--
20
0
IC -- VCE
--40
mA
--60
mA
--80
mA
--20
mA
--10
mA
--5mA
--2mA
--1mA
IB=0
2SA1419 2SC3649
2SC3649
IB=0
IB=0
IC -- VCE
2SA1419
20mA
50
mA
30mA
40
mA
10mA
5
mA
2
mA
1mA
--2.5mA
--2.0mA
--3.0mA
--3.5
mA
--5.0mA
--4.0
mA
--4.5
mA
--1.5
mA
--1.0
mA
--0.5mA
IB=0
0.5mA
5.0
mA
4.5
mA
2.5mA
3.5
mA
4.0
mA
2.0
mA
3.0mA
1.5
mA
1.0mA
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector-to-Emitter Voltage, VCE –V
No.2007-3/4
2SA1419/2SC3649
Cob -- VCB
ITR03580
ITR03579
2
0.01 5730.1 225731.0
2
--
0.01
--
0.1
5773 2
--
1.0
57323 2
0.01 0.1
5773 2 1.0
57323
100
10
2
3
5
7
2
3
5
2
1.0 57310 2573100
10
100
2
3
5
7
3
5
7
--
1000
--
100
2
3
5
7
2
3
2
3
5
7
fT -- ICITR03578
hFE -- IC
ITR03577
ITR03575
IC -- VBE
--
5
--
7
--
5
--
7
--
3
--
2
--
5
--
7
--
3
--
2
--
3
--
2
--
0.01
--
0.1
--
1.0
--
0.4
0
--
0.8
--
1.6
--
1.2
0.4
0
0.8
1.6
1.2
10
100
1000
5
7
3
2
5
7
3
2
57732
0.01 0.1 573232
1.0
10
100
1000
5
7
3
2
5
7
3
2
--
0.6
--
0.8
0
--
0.4
--
0.2
--
1.0
--
1.2 0.6 0.8
00.40.2 1.0 1.2
ITR03576
2SA1419
VCE=--5V 2SC3649
VCE=5V
IC -- VBE
hFE -- IC
2SA1419
VCE=--5V 2SC3649
VCE=5V
ITR03581
VCE(sat) -- IC
2
5
7
1000
2
3
5
7
100
3
2
3
ITR03582
VCE(sat) -- IC
2SC3649
IC / IB=10
2SA1419
IC / IB=10
--25°C
25
°C
Ta=75
°C
--25°C
25°C
Ta=75
°C
--25
°C
25
°C
Ta=75
°C
--25°C
25°C
Ta=75°C
--25°C
25°C
Ta=75
°C
--25°C
25°C
Ta=75°C
2SA1419
2SC3649
2SA1419
2SC3649
2SA1419 / 2SC3649 2SA1419 / 2SC3649
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
Collector Current, IC–A
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–A
DC Current Gain, hFE
Collector Current, IC–A
For PNP, minus sign is omitted. For PNP, minus sign is omitted.
Gain-Bandwidth Product, fT– MHz
Collector Current, IC–A
Output Capacitance, Cob – pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC– A Collector Current, IC–A
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) – mV
PS No.2007-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
2SA1419/2SC3649
ITR03583
VBE(sat) -- IC
--
1.0
--
10
3
5
7
3
5
7
2
0.01
3
0.1
5
7
5
7
2
3
1.0
5
5
7
2
3
2
7
--
0.01
--
0.1
5732
--
1.0
5732327
0.01 0.1
5732 1.0
573232
1.0
732
1.0
10
5
3
7
2
5
3
7
0
0.2
0.4
0.6
0.8
1.8
1.6
1.4
1.2
1.0
0 20 80 1006040 160140120
ITR03584
VBE(sat) -- IC
ITR03585
A S O
No heat sink
710
532327 100
5
PC -- Ta
ITR03586
1
ms
10ms
100
m
s
DC operation
For PNP, minus sign is omitted.
Single Pulse
Ta=25°C
Mounted on ceramic board (250mm
2
×0.8mm)
2SA1419
IC / IB=10 2SC3649
IC / IB=10
25°C75°C
Ta=--25°C
25°C75°C
Ta=--25°C
2SA1419 / 2SC3649 2SA1419 / 2SC3649
Collector Current, IC– A Collector Current, IC–A
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Base-to-Emitter
Saturation Voltage, VBE(sat) – V
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, PC–W
Ambient Temperature, Ta – ˚C
Mounted on ceramic board(250mm
2
×0.8mm)
ICP=2.5A
IC=1.5A
