HIGH VOLTAGE SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS 2N6449 2N6450 GEOMETRY 559 HIGH BVgs. . . 300V MIN (2N6449) HIGH POWER RATING... 5W ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL | 2N6449 | 2NG6450 [| UNITS - Drain to Gate Voitage BVoco 300 200 Volts Gate to Source Voltage _ BVcso -300 ~200 Votts Power Dissipation [25C case} Poc 5 w Derating Factor (Junction to Case) Dre 3.33 mW Power Dissipation (free air) Poa 800 mW Derating Factor (free air) Ora .33 mWPC Junction Temp. (Oper. & Store} Ta -65 to 200 C Lead Temp. (1/16 Fram Case 10 sec) Te 300 C Continuous Forward Gate Current IGF 10 mA ELECTRICAL CHARACTERISTICS: Ta = 25C (UNLESS OTHERWISE STATED) PARAMETERS AND 2N6449 2N6450 CONDITIONS SYMBOL |~Min..] Tye. | Max. | Min. ] Typ. | Maxey] UNITS Gate Leakage Current Vas. = -150V, Vos = 0 icss -1 -10 nA Gate Leakage Current . Ves = -150V, Vos = 0, Ta = 150C icss ~1 10 uA Gate Leakage Current Ves = -100V, Vos =0 Icss -1 -1 ~10 nA Gate Leakage Current Ves = -100V, Vos = 0, Ta = 150C icss -1 -1 -10 BA Gate Breakdown Voltage tg =-10NA, Vos = 0 BVass -300 -200 v Pinch-Off Vattage Vos = 30V, to = 4nA Veo -2 -15 -15 v Zero Bias Drain Current 1 VS =30V, VGS=0 . loss 2 10 2 10 mA Forward Transfer Admittance . 5 Vos = 30V, Ves = 0, f=1 kHz Vis" 500 3000 | S00 3000 umho Output Admittance . Vos = 30V, Vas = 0, f=1 kHz Yos? 100 100 pmho input Capacitance : : Vos = 30V, Ves = 0, f=1 kHz Ciss? 10 10 pt Reverse Xfer Cap. Vos = 30V, Ves = 0, f=1 kHz Cras 5 5 pt NOTES: 1. Measured using pulse techniques, tw = 300us, duty cycle<2%. 2. Measured with bias conditions applied for less than 5 seconds. CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y, #1779