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©2008 Fairchild Semiconductor Corporation FDD6680AS Rev. 1.2
FDD6680AS
30V N-Channel PowerTrench® SyncFET™
General Description
The FDD6680AS is designed to replace a single
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDD6680AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDD6680AS as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDD6680A in parallel with a
Schottky diode.
Applications
• DC/DC converter
• Low side notebook
Features
• 55 A, 30 V RDS(ON) max= 10.5 mΩ @ VGS = 10 V
RDS(ON) max= 13.0 mΩ @ VGS = 4.5 V
• Includes SyncFET Schottky body diode
• Low gate charge (21nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
.
G
S
D
TO-252
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Unit
s
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 3) 55 A
– Pulsed (Note 1a) 100
Power Dissipation (Note 1) 60
(Note 1a) 3.1
PD
(Note 1b) 1.3
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.1 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDD6680AS FDD6680AS 13’’ 16mm 2500 units
FDD6680AS
March 2015
FDD6680AS Rev. 1.2
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Av alanche Ratings (Note 2)
WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 15 V,
ID=13.5A 54 205 mJ
IAR Drain-Source Avalanche Current 13.5 A
Off Characteristics
BVDSS Drain–Source Breakdown
Voltage VGS = 0 V, ID = 1 mA 30 V
∆BVDSS
∆TJ Breakdown Voltage Temperature
Coefficient ID = 1 mA, Referenced to 25°C 29
mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V
±100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V
∆VGS(th)
∆TJ Gate Threshold Voltage
Temperature Coefficient ID = 1 mA, Referenced to 25°C
–3
mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 12.5 A
VGS = 4.5 V, ID = 10 A
VGS= 10 V, ID = 12.5A, TJ= 125°C
8.6
10.3
12.5
10.5
13.0
16.0
mΩ
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 44 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 1200 pF
Coss Output Capacitance 350 pF
Crss Reverse Transfer Capacitance 120 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.6 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 10 20 ns
tr Turn–On Rise Time 6 12 ns
td(off) Turn–Off Delay Time 28 45 ns
tf Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
12 22 ns
td(on) Turn–On Delay Time 14 25 ns
tr Turn–On Rise Time 13 23 ns
td(off) Turn–Off Delay Time 20 32 ns
tf Turn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
11 20 ns
Qg(TOT) Total Gate Charge at Vgs=10V 21 29 nC
Qg Total Gate Charge at Vgs=5V 11 15 nC
Qgs Gate–Source Charge 3 nC
Qgd Gate–Drain Charge
VDD = 15 V, ID = 12.5 A
4 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 4.4 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 4.4 A (Note 2)
VGS = 0 V, IS = 7 A (Note 2) 0.5
0.6 0.7 V
trr Diode Reverse Recovery Time IF = 12.5A,
diF/dt = 300 A/µs (Note 3) 17 nS
Qrr Diode Reverse Recovery Charge 11 nC
FDD6680
A
S
FDD6680AS Rev. 1.2
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient therma l resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mo unted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when m ounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6680AS
FDD6680AS Rev. 1.2
Typical Characteristics
0
20
40
60
80
100
00.511.522.53
V
DS
, DRAIN-SOURCE VOLT AGE (V)
I
D
, DRAIN CURRENT (A)
2.5V
4.5V
V
GS
= 10V
3.5V
3.0V
4.0V
6.0V
0.8
1
1.2
1.4
1.6
1.8
2
0 20406080100
I
D
, DRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESIST ANCE
V
GS
= 3.0V
6.0V
3.5V
4.0V
10V
4.5V 5.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
1.6
-50 -25 0 25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 12.5A
V
GS
=10V
0.008
0.014
0.02
0.026
0.032
246810
V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESIS TANCE (OHM)
I
D
= 6.3A
T
A
= 125
o
C
T
A
=25
o
C
Figure 3. On-Resistance Va riation with
Temperature. Figure 4. On-Resistance Va riation with
Gate-to-Source Voltage.
0
20
40
60
80
100
11.522.533.544.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
DS
= 5V
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1
V
SD
, BODY DIODE F ORWARD VOLTAGE (V)
I
S
, REVERSE D RAIN CURRENT (A)
T
A
= 125
o
C
25
o
C
-55
o
C
V
GS
= 0V
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDD6680AS
FDD6680AS Rev. 1.2
Typical Characteristics (continued)
0
2
4
6
8
10
0 5 10 15 20 25
Q
g
, GATE CH ARGE (nC)
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 12.5A V
DS
= 10V
20V
15V
0
300
600
900
1200
1500
1800
0 5 10 15 20 25 30
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
C
iss
f = 1MHz
V
GS
= 0 V
C
rss
C
oss
Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Cha racteristics.
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
I
D
, DRAIN CURRE N T ( A )
DC
1s
100ms
R
DS(ON)
LIMIT
V
GS
= 10V
SINGLE PULSE
R
θ
JA
= 96
o
C/W
T
A
= 25
o
C
10ms
10s
100us
1ms
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
R
θ
JA
= 96°C/W
T
A
= 25°C
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t
1
, TIME (sec)
r(t), NORM ALIZED EF FE CTIVE T RAN S IENT
THERMAL RESISTANCE
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 96 °C/W
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
P(pk
t
1
t
2
SINGL E PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6680AS
FDD6680AS Rev. 1.2
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
shows the reverse recovery characteristic of the
FDD6680AS.
Figure 12. FDD6680AS SyncFET body diode
reverse recovery characteris
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDD6680).
Schottky barrie diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0 5 10 15 20 25 30
VDS, REVERSE VOLTAGE (V)
IDSS, REVERSE LEAKAGE CURRENT (A)
TA = 125oC
TA = 25oC
TA = 100oC
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
Figure 13. Non-SyncFET (FDD6680) body
diode reverse recovery characteristic.
FDD6680AS
10nS/div
Current: 3A/div
10nS/div
Current: 3A/div
FDD6680AS Rev. 1.2
Typical Characteristics
VDS L
Figure 12. Unclamped Inductive Load Test
Circuit Figure 13. Unclamped Inductive
Waveforms
Figure 17. Switching Time Waveforms
RGE DUT
VGS
IAS 0.01Ω
VDD
+
-
tp
0V
vary tP to obtain
required peak IAS
VGS
tAV
tP
IAS VDS
VDD
BVDSS
Figure 16. Switching Time Test
Circuit
VDS RL
RGEN DUT VDD
VGS
Pulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
VGS
+
-
trtf
td(ON) td(OFF
)
tON tOFF
Pulse Width
10%
10%
90%
10%
90%
50%
90%
50%
0V
0V
VGS
VDS
Figure 14. Gate Charge Test Circuit Figure 15. Gate Charge Waveform
VGS QGS QGD
QG(TOT)
10V
Charge, (nC)
DUT
VDD
VGS
Ig(REF
+
-
+
-
Same type as
Drain Current
1µF
10µF
10V 50kΩ
FDD6680AS
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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