DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES * SMD encapsulation * Gold metallization ensures excellent reliability. 4 handbook, halfpage APPLICATIONS * Hand-held radio equipment in the 900 MHz communication band. c b DESCRIPTION e NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223 SMD package. 1 PINNING - SOT223 2 3 MAM043 - 1 Top view PIN SYMBOL DESCRIPTION 1 e emitter 2 b base 3 e emitter 4 c collector Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Ts 60 C in a common emitter test circuit (see Fig.7). MODE OF OPERATION f (MHz) VCE (V) PL (W) Gp (dB) C (%) CW, class-B narrow band 900 7.5 0.8 6 60 1996 May 09 2 Philips Semiconductors Product specification UHF power transistor BLT80 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 10 V VEBO emitter-base voltage open collector - 3 V IC collector current (DC) - 250 mA IC(AV) average collector current - 250 mA ICM peak collector current f > 1 MHz - 750 mA Ptot total power dissipation Ts = 131 C; note 1 - 2 W Tstg storage temperature -65 +150 C Tj operating junction temperature - 175 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point Ptot = 2 W; Ts = 131 C; note 1 22 K/W Rth j-a thermal resistance from junction to ambient Ptot = 2 W; Tamb = 25 C; note 2 85 K/W Note to the "Limiting values" and "Thermal characteristics" 1. Ts is the temperature at the soldering point of the collector pin. 2. Transistor mounted on a printed-circuit board measuring 40 x 40 x 1 mm, collector pad 35 x 17 mm. MRA780 - 1 1 handbook, halfpage IC (A) 10-1 10-2 1 10 VCE (V) 102 Ts = 131 C. Fig.2 DC SOAR. 1996 May 09 3 Philips Semiconductors Product specification UHF power transistor BLT80 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. - UNIT V(BR)CBO collector-base breakdown voltage open emitter; IC = 2.5 mA 20 V(BR)CEO collector-emitter breakdown voltage open base; IC = 5 mA 10 - V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.5 mA 3 - V ICES collector leakage current VCE = 10 V; VBE = 0 - 0.1 mA hFE DC current gain VCE = 5 V; IC = 150 mA; note 1; see Fig.3 25 - Cc collector capacitance VCB = 7.5 V; IE = ie = 0; f = 1 MHz; see Fig.4 - 3.5 pF Cre feedback capacitance VCE = 7.5 V; IC = 0; f = 1 MHz - 2.5 pF V Note 1. Measured under pulsed conditions: tp 200 s; 0.02. MRA773 MRA776 100 handbook, halfpage 5 handbook, halfpage hFE Cc (pF) 80 4 60 3 40 2 20 1 0 0 0 200 400 600 800 0 4 8 IC (mA) DC current gain as a function of collector current; typical values. 1996 May 09 16 20 VCB (V) IE = ie = 0; f = 1 MHz; Tj = 25 C. VCE = 7.5 V; tp 200 s; 0.02; Tj = 25 C. Fig.3 12 Fig.4 4 Collector capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification UHF power transistor BLT80 APPLICATION INFORMATION RF performance at Ts 60 C in a common emitter test circuit (see note 1 and Fig.7). MODE OF OPERATION f (MHz) VCE (V) PL (W) CW, class-B narrow band 900 7.5 0.8 Gp (dB) C (%) 6 60 typ. 8 typ. 67 Note 1. Ts is the temperature at the soldering point of the collector pin. Ruggedness in class-AB operation The BLT80 is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the following conditions: f = 900 MHz; VCE = 9 V; PL = 0.8 W; Ts 60 C. MRA774 handbook, 10 halfpage Gp (dB) Gp MRA779 100 C (%) handbook,1.5 halfpage PL (W) 8 80 1.2 6 60 0.9 4 40 0.6 2 20 0.3 C 0 0 0.3 0.6 0.9 1.2 0 1.5 PL (W) 0 400 600 Class-B; f = 900 MHz; VCE = 7.5 V; Ts 60 C. Power gain and collector efficiency as functions of load power; typical values. 1996 May 09 200 PD (mW) Class-B; f = 900 MHz; VCE = 7.5 V; Ts 60 C. Fig.5 0 Fig.6 5 Load power as a function of drive power; typical values. Philips Semiconductors Product specification UHF power transistor BLT80 Test circuit information handbook, full pagewidth 50 input ,,, ,, ,, ,,, C1 L5 L1 C2 L2 DUT C3 C8 L10 L6 L7 C5 50 output C7 L8 L3 L9 VCC R1 L4 R2 C4 C6 MBB649 Fig.7 Common emitter test circuit for class-B operation at 900 MHz. List of components used in test circuit (see Figs 7 and 8) COMPONENT DESCRIPTION VALUE DIMENSIONS C1, C8 multilayer ceramic chip capacitor; note 1 100 pF C2, C3 type 9105 Voltronix KM10 trimmer C4 multilayer ceramic chip capacitor; note 1 220 pF C5, C7 film dielectric trimmer C6 multilayer ceramic chip capacitor; note 1 1 nF L1 stripline; note 2 L2, L7 1 turn 0.4 mm copper wire on grade 3B core L3, L8 6 turns enamelled 0.8 mm copper wire L4, L9 grade 3B Ferroxcube wideband HF choke L5 stripline; note 2 50 length 8.4 mm width 4.85 mm L6 stripline; note 2 50 length 20 mm width 4.85 mm L10 stripline; note 2 50 length 21 mm width 4.85 mm R1, R2 metal film resistor 10 , 0.25 W CATALOGUE No. 0.6 to 10 pF 1.4 to 5.5 pF 50 2222 809 09001 length 13 mm width 4.85 mm 4330 030 32221 internal dia. 3 mm 4312 020 36640 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE fibre-glass dielectric (r = 2.2); thickness 1 "; thickness of the copper sheet 35 m. 16 1996 May 09 6 Philips Semiconductors Product specification UHF power transistor BLT80 140 handbook, full pagewidth strap strap 80 rivets (14x) strap mounting screws (8x) strap VCC L9 L4 C6 C4 R1 L3 L2 L1 C1 R2 L8 L7 L5 L6 C5 C2 C8 L10 C7 C3 MBB648 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by means of fixing screws and copper foil straps under the emitter leads. Fig.8 Printed-circuit board and component lay-out for 900 MHz class-B test circuit in Fig.7. 1996 May 09 7 Philips Semiconductors Product specification UHF power transistor BLT80 MRA777 10 Zi () MRA778 handbook, 30 halfpage handbook, halfpage ZL () 25 ri 8 RL 20 6 15 4 10 xi 2 5 XL 0 800 840 880 920 960 0 800 1000 f (MHz) 840 880 920 960 1000 f (MHz) Class-B; VCE = 7.5 V; PL = 0.8 W; Ts 60 C. Class-B; VCE = 7.5 V; PL = 0.8 W; Ts 60 C. Fig.9 Fig.10 Load impedance as a function of frequency (series components); typical values. Input impedance as a function of frequency (series components); typical values. MRA775 10 Gp (dB) handbook, halfpage 8 6 handbook, halfpage 4 Zi ZL MBA451 2 0 800 840 880 920 960 1000 f (MHz) Class-B; VCE = 7.5 V; PL = 0.8 W; Ts 60 C. Fig.11 Power gain as a function of frequency; typical values. 1996 May 09 Fig.12 Definition of transistor impedance. 8 Philips Semiconductors Product specification UHF power transistor BLT80 PACKAGE OUTLINE 0.95 0.85 handbook, full pagewidth S 0.1 S seating plane 0.32 0.24 6.7 6.3 3.1 2.9 B 4 A 0.10 0.01 16 o max 16 3.7 3.3 10 o max 2 0.80 0.60 2.3 4.6 Dimensions in mm. Fig.13 SOT223. 1996 May 09 7.3 6.7 o 1 1.80 max 0.2 M A 9 3 0.1 M B (4x) MSA035 - 1 Philips Semiconductors Product specification UHF power transistor BLT80 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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