APTC60DDAM35T3G Dual boost chopper VDSS = 600V RDSon = 35m max @ Tj = 25C ID = 72A @ Tc = 25C Super Junction MOSFET Power Module Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction 13 14 CR1 CR2 23 8 Features * Q2 Q1 26 4 27 3 29 30 31 15 16 R1 28 27 26 25 * * 32 23 22 * * 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ... - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25C Tc = 80C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Max ratings 600 72 54 288 20 35 416 20 1 1800 Unit V A July, 2006 7 V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTC60DDAM35T3G - Rev 2 22 APTC60DDAM35T3G All ratings @ Tj = 25C unless otherwise specified IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate - Source Charge Qgd Gate - Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25C Tj = 125C VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = 20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IF Maximum Reverse Leakage Current 3 Min Typ 14 5.13 0.42 518 Test Conditions IF = 80A VGE = 0V VF Diode Forward Voltage trr Reverse Recovery Time IF = 80A VR = 300V Qrr Reverse Recovery Charge di/dt =4500A/s Max Unit A m V nA nF nC 21 30 84 1340 J 1960 2192 J 2412 Min 600 Typ Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C 80 1.45 1.35 95 Tj = 125C 115 Tj = 25C Tj = 125C 5.2 8 www.microsemi.com ns 283 Inductive switching @ 25C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 Inductive switching @ 125C VGS = 15V, VBus = 400V ID = 72A, R G = 2.5 DC Forward Current Unit 222 Inductive Switching @ 125C VGS = 15V VBus = 400V ID = 72A R G = 2.5 VR=600V Max 40 375 35 3.9 150 58 Chopper diode ratings and characteristics IRM 2.1 VGS = 10V VBus = 300V ID = 72A Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Typ Max 350 600 Unit V A A V ns July, 2006 Symbol C 2-6 APTC60DDAM35T3G - Rev 2 Electrical Characteristics APTC60DDAM35T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Transistor Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M4 2500 -40 -40 -40 2.5 RT = Min Unit C/W V 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Max 0.3 0.8 Typ 50 3952 Max C N.m g Unit k K R 25 T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 - T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTC60DDAM35T3G - Rev 2 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTC60DDAM35T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics V GS=15&10V 6.5V 6V 5.5V 5V 4.5V 4V VDS > ID(on)xRDS (on)MAX 250s pulse test @ < 0.5 duty cycle 240 200 160 120 80 T J=125C 40 TJ=25C T J=-55C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS =20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 Normalized to VGS=10V @ 36A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 70 60 50 40 30 20 10 0 20 40 60 80 100 120 I D, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (C) 150 July, 2006 0 4-6 APTC60DDAM35T3G - Rev 2 RDS(on) Drain to Source ON Resistance I D, Drain Current (A) 280 I D, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 APTC60DDAM35T3G 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) TJ, Junction Temperature (C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 100 100 s limited by RDSon 1 ms Single pulse TJ=150C TC=25C 10 0.6 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 1000 14 ID=72A TJ=25C 12 10 V DS=120V VDS=300V 8 V DS =480V 6 4 2 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 0 100 200 300 400 Gate Charge (nC) 500 600 July, 2006 0 100 Gate Charge vs Gate to Source Voltage VGS , Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (C) C, Capacitance (pF) V GS=10V ID= 72A www.microsemi.com 5-6 APTC60DDAM35T3G - Rev 2 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 APTC60DDAM35T3G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5 TJ=125C L=100H 200 150 100 50 80 40 40 60 80 100 tr 20 0 20 0 120 0 20 ID, Drain Current (A) Switching Energy (mJ) Eon 120 VDS=400V ID=72A T J=125C L=100H 8 6 Eoff Eon 4 2 0 40 60 80 100 ID, Drain Current (A) 120 10 15 20 25 Source to Drain Diode Forward Voltage 1000 ZVS 100 80 VDS=400V D=50% RG=2.5 TJ=125C TC=75C 5 Gate Resistance (Ohms) I DR, Reverse Drain Current (A) ZCS 0 hard switching 0 T J=150C 100 TJ=25C 10 1 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) "COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 July, 2006 20 120 Frequency (kHz) 100 APTC60DDAM35T3G - Rev 2 Switching Energy (mJ) Eoff Operating Frequency vs Drain Current 20 80 Switching Energy vs Gate Resistance 140 40 60 10 VDS=400V RG=2.5 TJ=125C L=100H 0 60 40 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 tf 60 td(on) 0 VDS=400V RG=2.5 T J=125C L=100H 100 tr and t f (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120