APTC60DDAM35T3G
APTC60DDAM35T3G – Rev 2 July, 2006
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1413
Q1 Q2
23 8
22 7
CR 1 CR 2
3029 32
426
3
27
31
16
15 R1
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
S
ymbol Parameter Ma
x
ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 72
ID Continuous Drain Current Tc = 80°C 54
IDM Pulsed Drain current 288
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 35 mΩ
PD Maximum Power Dissipation Tc = 25°C 416 W
IAR Avalanche current (repetitive and non repetitive) 20 A
EAR Repetitive Avalanche Energy 1
EAS Single Pulse Avalanche Energy 1800 mJ
VDSS = 600V
RDSon = 35mΩ max @ Tj = 25°C
ID = 72A @ Tc = 25°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
•
- Ul tra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outsta nding perfor ma nce at high freq ue nc y operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
boost of twice the current capability
• RoHS Compliant
D
ual boost choppe
r
Super Junction MOSFET
Power Module
APTC60DDAM35T3G
APTC60DDAM35T3G – Rev 2 July, 2006
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All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 40
IDS S Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V T
j = 125°C 375 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 72A 35
mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5.4mA 2.1 3 3.9 V
IGS S Gate – Source Leakage Current VGS = ±20 V, VDS = 0V ±150 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cis s Input Capacitance 14
Coss Output Capacitance 5.13
Crss Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz 0.42
nF
Qg Total gate Charge 518
Qgs Gate – Source Charge 58
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A 222
nC
Td(on) Tur n-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 283
Tf Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5Ω 84
ns
Eon Turn-on Switching Energy 1340
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBu s = 400V
ID = 72A, RG = 2.5Ω 1960 µJ
Eon Turn-on Switching Energy 2192
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBu s = 400V
ID = 72A, RG = 2.5Ω 2412 µJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 600 µA
IF DC Forward Current Tc = 80°C 80 A
Tj = 25°C 1.45
VF Diode Forward Voltage IF = 80A
VGE = 0V Tj = 125°C 1.35 V
Tj = 25°C 95
trr Reverse Recovery Time Tj = 125°C 115 ns
Tj = 25°C 5.2
Qrr Reverse Recovery Charge
IF = 80A
VR = 300V
di/dt =4500A/µs
Tj = 125°C 8 µC
APTC60DDAM35T3G
APTC60DDAM35T3G – Rev 2 July, 2006
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Transistor 0.3
RthJC Junction to Case Thermal Resistance Diode 0.8
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTC60DDAM35T3G
APTC60DDAM35T3G – Rev 2 July, 2006
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Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
240
280
320
360
400
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
VGS=15&10V
Low Voltage Output Characteristics Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
40
80
120
160
200
240
280
01234567
VGS, Gate to Source Voltage (V)
ID, Drain Current (A)
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
0 20 40 60 80 100 120
ID, Drain Current (A)
RDS(on) Drain to Source ON Resistance
Normalized to
VGS=10V @ 36A
0
10
20
30
40
50
60
70
80
25 50 75 100 125 150
TC, Case Temperature (°C)
ID, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTC60DDAM35T3G
APTC60DDAM35T3G – Rev 2 July, 2006
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0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature (°C)
RDS
(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 72A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximum Safe Operating Area
10 ms
1 ms
100 µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited b
y
R
DS
on
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0 1020304050
VDS, Drain to Source Voltage (V)
C, Capacitance (pF)
Capacitance vs Drain to Source Voltage
VDS=120V
VDS=300V
VDS =480V
0
2
4
6
8
10
12
14
0 100 200 300 400 500 600
Gate Charge (nC)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
ID=72A
TJ=25°C
APTC60DDAM35T3G
APTC60DDAM35T3G – Rev 2 July, 2006
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TJ=25°C
TJ=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, Source to Drain Voltage (V)
IDR, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0 20 40 60 80 100 120
ID, Drain Current (A)
td(on) and td(off) (ns)
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0 20406080100120
ID, Drain Current (A)
tr and tf (ns)
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 20406080100120
ID, Drain Current (A)
Switching Energy (mJ)
VDS=400V
RG=2.5Ω
TJ=125°C
L=100µH
Eon
Eoff
0
2
4
6
8
10
0 5 10 15 20 25
Gate Resistance (Ohms)
Switching Energy (mJ)
Switching Energy vs Gate Resistance
VDS=400V
ID=72A
TJ=125°C
L=100µH
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
Frequency (kHz)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=2.5Ω
TJ=125°C
TC=75°C
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
M icros e mi re serves the right to c ha nge, wi tho ut notice, the s pe cificatio ns and info rmatio n co ntained he rein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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