THU INTERNATIONAL SEMICOND KOE D MM 9000374 O00005e T94 MMISEM International Semiconductor, Inc. TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 11.7 VOLT NOMINAL ZENER VOLTAGE LOW CURRENT RANGE: 0.5 and 1.0 mA 1IN4765 thru IN4774A MAXIMUM RATINGS + Operating Temperature: -65 C to +200 C Storage Temperature: -55 C to +200 C DG Power Dissipation: 500 mW at 50 G Power Derating: 3.83 mW/C above 50 C * ELECTRICAL CHARACTERISTICS @e@ 25 C, unless otherwise specified VOLTAGE MAXIMUM TEMPERATURE JEDEC ZENER ZENER ZENER STABILITY EFFECTIVE TYPE VOLTAGE TEST IMPEDANCE (Nofe 2) TEMPERATURE TEMPERATURE CURRENT (Note 1 A NUMBERS Vz @ xt ) Vzt RANGE COEFFICIENT Izt Zzt MAXIMUM VOLTS mA OHMS mV DEGREES CENTIGRADE 2/ IN4765 9.1 0.6 360 6s 0 to + 76 -01 1N47661 9.1 0.6 360 141 -56 to +100 .01 1N4766 9.1 0.6 360 34 0 to + 76 .006 IN4766A 9.1 0.6 360 70 -66 to +100 -006 1N4767 9.1 0.6 360 14 0 to + 76 .002 1N4767A 9.4 0.6 360 28 -55 to +100 002 1IN4768 9.1 0.6 360 6.8 0 te + 76 .001 IN4 768A 9.1 0.6 360 14 -66 to +100 -001 1N4769 9.1 0.6 360 3.4 0 to + 76 -0006 IN4 769A @.1 0.6 350 7 -55 to +100 .0005 1N4770 9.1 1.0 200 6a 0 to + 76 .O1 IN4770A 9.1 1.0 200 141 -66 to +100 01 IN4771 9.1 1.0 200 34 0 to + 76 -006 IN4771A 9.4 1.0 200 70 -56 to +100 006 IN4772 9.1 1.0 200 14 0 to +76 002 IN47T72A 9.1 1.0 200 28 -65 to #100 002 1N4778 9.1 1.0 200 6.8 0 to + 76 001 IN4773A 9.1 1.0 200 14 -65 to +100 -001 1IN4774 9.1 1.0 200 34 0 to + 76 .0006 IN4 774A 9.1 1.0 200 7 -685 to +100 0006 * JEDEC Registered Data. NOTE 1 Zener impedance is derived by superimposing on Izt a 690 Hz rms a.c. currant equal to 10% of Izt. NOTE 2 The maximum allowable change observed over the entire temperature range i.e., the diade voltage will mot exceed the specified mV at any discrata temperature between the established iimits. L 1 1.066 26,400 POLARITY Q 300 BAND > 7 620 (CATHODE) 1.006 26 400 0 018/060 622 0 4567/0 659 Orameter inch All dimensions in mm FIGURE 1 DESIGN DATA CASE: Hermetically sealed glass case. DO-7 Outline LEAD MATERIAL: Copper clad steel LEAD FINISH: Tin Plate THERMAL RESISTANCE: 250 C/w (Typical) junction to ambient. POLARITY: Diode to be operated with the bvandad (cathode) end positive with respect to the opposite and WEIGHT: 0.2 Grams MOUNTING POSITION: Any CORPORATE OFFICES: 727 Raritan Road - Suite 203 Glark, NJ O7066 Tel: 308 396-0322 Fax: 908 396-0410 SALES OFFICE: 74 E. Alamo, #40 Chandler, AZ 85225 Tel: 602 497-8172 A Fax: 602 497-8173 \ ToDAa-SINTERNATIONAL SEMNICOND HIE D MM 9000378 0000053 920 MISEM TEMPERATURE COEFFICIENT (%/c) Rated Power Pd, 600 T-\\ - (\ = 500 ; 5 400, 5 s00! 1N4765 = 200 | thru z 100 1N4774A a { 0 25 50 75 100 126 160 175 200 Tt, Lead Temperature (C) 3/8" from body Figure 2 POWER DERATING CURVE +,0016 +,0010 +,.0005 0 -.0005 -.0010 ~.0015 -.0020 ' -.- 0 0.6 1.0 1.6 2.0 2.5 OPERATING CURRENT Izt (mA) Figure 3 TEMPERATURE COEFFICIEN VERSUS OPERATING CURRE NT ~ 1000 . = E F Oo 600 [ ~ 4008 300 + N 200 ; w o i z 100; a E wi 2 60 - = 40 - ~ 30 - a : 20; - z ! Ww N 10: : : 1.0 0.5 1.0 1.6 2.0 2.5 38.0 OPERATING CURRENT Izt (mA) Figure 4 i ZENER IMPEDANCE i VERSUS OPERATING CURRENT