PD - 95219A l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free IRL2203NSPbF IRL2203NLPbF HEXFET(R) Power MOSFET D VDSS = 30V RDS(on) = 7.0m G ID = 116A S Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL2203NL) is available for low-profile applications. D2Pak TO-262 IRL2203NSPbF IRL2203NLPbF Absolute Maximum Ratings Symbol ID @ TC = 25C Parameter Max Continuous Drain Current, VGS @ 10V 116 Units i ID @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM 400 PD @TA = 25C Power Dissipation PD @TC = 25C Power Dissipation 3.8 W 180 W W/C V A 82 c VGS IAR Linear Derating Factor Gate-to-Source Voltage Avalanche Current 1.2 16 60 A EAR Repetitive Avalanche Energy 18 mJ 5.0 V/ns dv/dt c c Peak Diode Recovery dv/dt e Operating Junction and TJ TSTG -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds C 300 (1.6mm from case) Thermal Resistance Symbol k Parameter RJC Junction-to-Case RJA Junction-to-Ambient (PCB mount, steady state) www.irf.com jk Typ Max --- 0.85 --- 40 Units C/W 1 10/01/10 IRL2203NS/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Parameter Min Typ Max Units 30 --- --- Breakdown Voltage Temp. Coefficient --- 0.029 --- Static Drain-to-Source On-Resistance --- --- 7.0 VGS = 10V, ID = 60A --- --- 10 VGS = 4.5V, ID = 48A V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ RDS(on) V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA f f VGS(th) Gate Threshold Voltage 1.0 --- 3.0 V gfs Forward Transconductance 73 --- --- S IDSS Drain-to-Source Leakage Current --- --- 25 --- --- 250 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 Qg Total Gate Charge --- --- 60 Qgs Gate-to-Source Charge --- --- 14 Qgd Gate-to-Drain ("Miller") Charge --- --- 33 RG Gate Resistance 0.2 --- 3.0 td(on) Turn-On Delay Time --- 11 --- VDD = 15V tr Rise Time --- 160 --- ID = 60A td(off) Turn-Off Delay Time --- 23 --- RG = 1.8 tf Fall Time --- 66 --- VGS = 4.5V, See Fig. 10 LD Internal Drain Inductance --- 4.5 --- IGSS A nA VDS = VGS, ID = 250A VDS = 25V, I D = 60A f VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 16V VGS = -16V ID = 60A nC VDS = 24V VGS = 4.5V, See Fig. 6 and 13 Between lead, Nh 6mm (0.25in.) from package LS Internal Source Inductance --- 7.5 --- Ciss Input Capacitance --- 3290 --- Coss Output Capacitance --- 1270 --- pF VDS = 25V Crss Reverse Transfer Capacitance Single Pulse Avalanche Energy --- 170 --- 1320 --- 290 mJ IAS = 60A, L = 0.16mH EAS d g h f and center of die contact VGS = 0V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time c Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 0.16mH RG = 25, IAS = 60A, VGS=10V (See Figure 12) ISD 60A, di/dt 110A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. 2 Min Typ Max Units 116 i Conditions MOSFET symbol --- --- --- --- 400 --- --- 1.2 V --- 56 84 ns --- 110 170 nC A showing the integral reverse p-n junction diode. TJ = 25C, IS = 60A, VGS = 0V TJ = 25C, IF = 60A di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C www.irf.com IRL2203NS/LPbF 1000 1000 VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V VGS 15V 10V 4.5V 3.7V 3.5V 3.3V 3.0V BOTTOM 2.7V 100 TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 100 10 2.7V 20s PULSE WIDTH TJ = 25 C 1 0.1 1 10 2.7V 10 1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 C TJ = 175 C 100 V DS = 15V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 1000 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 10 2.0 20s PULSE WIDTH TJ = 175 C 7.0 ID = 100A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRL2203NS/LPbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 5000 4000 Ciss 3000 Coss 2000 1000 0 15 VGS , Gate-to-Source Voltage (V) 6000 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 Crss 1 10 0 100 20 ID, Drain-to-Source Current (A) 10000 100 10 TJ = 25 C V GS = 0 V 0.4 60 80 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 TJ = 175 C 1 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 0.1 0.0 0 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) VDS = 24V VDS = 15V 12 VDS , Drain-to-Source Voltage (V) 0.8 1.2 1.6 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID = 60A 2.4 100 100sec 1msec 10 Tc = 25C Tj = 175C Single Pulse 1 1 10msec 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRL2203NS/LPbF 120 VDS LIMITED BY PACKAGE ID , Drain Current (A) 100 VGS RD D.U.T. RG + -VDD 80 V GS 60 Pulse Width 1 s Duty Factor 0.1 % 40 Fig 10a. Switching Time Test Circuit 20 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 175 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D.U.T RG VGS 20V IAS tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS , Single Pulse Avalanche Energy (mJ) IRL2203NS/LPbF 600 ID 24A 42A 60A TOP 500 BOTTOM 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRL2203NS/LPbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET(R) power MOSFETs www.irf.com 7 IRL2203NS/LPbF D2Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD - FREE PRODUCT (OPT IONAL) YEAR 0 = 2000 WEEK 02 A = AS SEMBLY S IT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com IRL2203NS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" INT ERNATIONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C OR INT ERNAT IONAL RECT IFIER LOGO ASS EMBLY LOT CODE PART NUMBER DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = ASS EMBLY SIT E CODE Notes: 1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 IRL2203NS/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/2010 10 www.irf.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie") . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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