2011-07-13
Rev 1.5 Page 1
BSS 223PW
OptiMOS-P Small-Signal-Transistor Product Summary
VDS -20 V
RDS(on) 1.2 Ω
ID-0.39 A
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
PG-SOT-323
1
3
VSO05561
2
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
X4s
Type
Package
Tape and Reel
BSS 223PW
PG-SOT-323
H6327:3000pcs/r.
Maximum Ratings, at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.39
-0.31
A
Pulsed drain current
T
A
=25°C
ID puls
-1.56
Avalanche energy, single pulse
I
D
=-0.39 A , V
DD
=-10V, R
GS
=25Ω
EAS
1.4
mJ
Reverse diode dv/dt
I
S
=-0.39A, V
DS
=-16V, di/dt=200A/µs, T
jmax
=150°C
dv/dt
-6
kV/µs
Gate source voltage
VGS
±12
V
Power dissipation
T
A
=25°C
P
tot
0.25
W
Operating and storage temperature
Tj , Tstg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class; JESD22-A114-HBM
Class 0
2011-07-13
Rev 1.5 Page 2
BSS 223PW
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point RthJS - - 180 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 500
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -20 - - V
Gate threshold voltage, VGS = VDS
ID=-1.5µA
VGS(th) -0.6 -0.9 -1.2
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C
VDS=-20V, VGS=0, Tj=150°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-12V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-2.5V, ID=-0.29A
RDS(on) - 1.27 2.1 Ω
Drain-source on-state resistance
VGS=-4.5, ID=-0.39A
RDS(on) - 0.7 1.2
2011-07-13
Rev 1.5 Page 3
BSS 223PW
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs çVDSç≥2*çIDç*RDS(on)max
ID=-0.31A
0.35 0.7 - S
Input capacitance Ciss VGS=0, VDS=-15V,
f=1MHz
- 45 56 pF
Output capacitance Coss - 21 26
Reverse transfer capacitance Crss - 17 22
Turn-on delay time td(on) VDD=-10V, VGS=-4.5V,
ID=-0.39A, RG=6Ω
- 3.8 5.7 ns
Rise time tr- 5 7.5
Turn-off delay time td(off) - 5.1 7.6
Fall time tf- 3.2 4.8
Gate Charge Characteristics
Gate to source charge Qgs VDD=-10V, ID=-0.39A - -0.04 -0.05 nC
Gate to drain charge Qgd - -0.4 -0.5
Gate charge total QgVDD=-10V, ID=-0.39A,
VGS=0 to -4.5V
- -0.5 -0.62
Gate plateau voltage V(plateau) VDD=-10V, ID=-0.39A - -2.2 -2.7 V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - -0.39 A
Inv. diode direct current, pulsed ISM - - -1.56
Inverse diode forward voltage VSD VGS=0, IF=-0.39 - -1 -1.33 V
Reverse recovery time trr VR=-10V, |IF| = |lD|,
diF/dt=100A/µs
- 7.6 9.5 ns
Reverse recovery charge Qrr - 1.1 1.4 nC
2011-07-13
Rev 1.5 Page 4
BSS 223PW
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0.22
0.24
W
0.28 BSS 223PW
Ptot
2 Drain current
ID = f (TA)
parameter: |VGS|≥ 4.5 V
0 20 40 60 80 100 120 °C 160
TA
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
-0.36
A
-0.42 BSS 223PW
ID
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 -1 -10 0 -10 1 -10 2
VVDS
-2
-10
-1
-10
0
-10
1
-10
A
BSS 223PW
ID
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 180.0µs
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
K/W BSS 223PW
ZthJA
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-07-13
Rev 1.5 Page 5
BSS 223PW
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj =25°C
0 0.3 0.6 0.9 V1.5
-VDS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-ID
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS
0 0.1 0.2 0.3 0.4 0.5 A0.7
-ID
0
0.5
1
1.5
2
2.5
3
Ω
4
RDS(on)
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0 0.5 1 1.5 2 V3
-VGS
0
0.1
0.2
0.3
0.4
0.5
A
0.7
-ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0 0.1 0.2 0.3 0.4 0.5 A0.7
-ID
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
S
1.1
gfs
2011-07-13
Rev 1.5 Page 6
BSS 223PW
9 Drain-source on-resistance
RDS(on) = f(Tj)
parameter: ID = -0.39 A, VGS = -4.5 V
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
Ω
1.6
RDS(on)
typ.
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
1.2
V
1.6
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz; Tj = 25 °C
0 2 4 6 8 10 12 V15
-VDS
1
10
2
10
pF
C
Ciss
Coss
Crss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-2
-10
-1
-10
0
-10
1
-10
A
BSS 223PW
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2011-07-13
Rev 1.5 Page 7
BSS 223PW
13 Typ. avalanche energy
EAS = f (Tj), par.: ID = -0.39 A
VDD = -10 V, RGS = 25 Ω
20 40 60 80 100 120 °C 160
Tj
0
0.2
0.4
0.6
0.8
1
mJ
1.4
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = -0.39 A pulsed; Tj = 25 °C
0 0.2 0.4 0.6 0.8 1 nC 1.3
|QGate|
0
-2
-4
-6
-8
-10
-12
V
-16 BSS 223PW
VGS
20%
50%
80%
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
-60 -20 20 60 100 °C 180
Tj
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5 BSS 223PW
V(BR)DSS
Published by
Infineon Technologies AG
81726 Munich, Germany
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Warnings
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on the types in question, please contact the nearest Infineon Technologies Of f ice.
Infineon Technologies components may be used in life-support devices or systems only with
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reasonably be expected to cause the failure of that life-support device or system or to affect
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or other persons may be endangered.
2011-07-13
Rev 1.5 Page 3
BSS 223PW
