SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FZT600 ISSUE 3 FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A TYPICAL CHARACTERISTICS C E 20k CE=10V V - Gain 0.90 C B I /I =100 8k 0.70 Group A 4k 0.60 0 0.01 0.1 1 10 0.001 IC - Collector Current (Amps) FZT600 C B ABSOLUTE MAXIMUM RATINGS. 12k 0.80 h - (Volts) 16k V PART MARKING DETAIL Group B 1.00 0.01 0.1 1 10 IC - Collector Current (Amps) hFE v IC VCE(sat) v IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 160 140 10 4 2 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 1.5 - (Volts) 1.6 C B 1.4 I /I =100 1.4 CE=5V V 1.3 V V - (Volts) 1.8 1.2 1.0 1.2 0.01 0.1 1 10 IC - Collector Current (Amps) 1.1 0.01 0.1 1 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO MIN. 160 V(BR)CEO V(BR)EBO ICBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE GROUP B Transition Frequency fT Output Capacitance Switching Times Cobo Ton Toff TYP. UNIT V CONDITIONS. IC=100A 140 V IC=10mA* 10 V IE=100A 0.01 10 A A 10 0.1 1.1 1.2 1.9 1.7 VCB=140V VCB=140V, Tamb=100C A 0.75 0.85 1.7 1.5 1k 2k 1k 5k 10k 5k 150 MAX. A V V V V 100k 10k 20k 10k 250 10 0.75 2.20 100k MHz 15 MHz s s *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 198 3 - 197 VCES=140V VEB=8V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V* IC=0.5mA, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FZT600 ISSUE 3 FEBRUARY 1997 FEATURES * 2A continuous current * 140 VOLT VCEO * Guaranteed hFE Specified up to 1A TYPICAL CHARACTERISTICS C E 20k CE=10V V - Gain 0.90 C B I /I =100 8k 0.70 Group A 4k 0.60 0 0.01 0.1 1 10 0.001 IC - Collector Current (Amps) FZT600 C B ABSOLUTE MAXIMUM RATINGS. 12k 0.80 h - (Volts) 16k V PART MARKING DETAIL Group B 1.00 0.01 0.1 1 10 IC - Collector Current (Amps) hFE v IC VCE(sat) v IC PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 160 140 10 4 2 2 -55 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). 1.5 - (Volts) 1.6 C B 1.4 I /I =100 1.4 CE=5V V 1.3 V V - (Volts) 1.8 1.2 1.0 1.2 0.01 0.1 1 10 IC - Collector Current (Amps) 1.1 0.01 0.1 1 IC - Collector Current (Amps) VBE(sat) v IC VBE(on) v IC 10 PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO MIN. 160 V(BR)CEO V(BR)EBO ICBO Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE GROUP B Transition Frequency fT Output Capacitance Switching Times Cobo Ton Toff TYP. UNIT V CONDITIONS. IC=100A 140 V IC=10mA* 10 V IE=100A 0.01 10 A A 10 0.1 1.1 1.2 1.9 1.7 VCB=140V VCB=140V, Tamb=100C A 0.75 0.85 1.7 1.5 1k 2k 1k 5k 10k 5k 150 MAX. A V V V V 100k 10k 20k 10k 250 10 0.75 2.20 100k MHz 15 MHz s s *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 198 3 - 197 VCES=140V VEB=8V IC=0.5A, IB=5mA* IC=1A, IB=10mA* IC=1A, IB=10mA* IC=1A, VCE=5V* IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V* IC=50mA, VCE=10V* IC=0.5mA, VCE=10V* IC=1A, VCE=10V* IC=100mA, VCE=10V f=20MHz VCB=10V, f=1MHz IC=0.5A, VCE=10V IB1=IB2=0.5mA