©2005 Fairchild Semiconductor Corporation
1
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FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
July 2005
FJC2383
NPN Epitaxial Silicon Transistor
Color TV Audio Output & Color TV Vertical Deflection Output
Absolute Maximum Ratings
T
a
= 25°C unless otherwise noted
Electrical Characteristics
T
a
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
CBO
Collector-Base Voltage 160 V
V
CEO
Collector-Emitter Voltage 160 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current 1 A
I
B
Base Current 0.5 A
P
C
Collector Power Dissipation 500 mW
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
I
CBO
Collector Cut-off Current V
CB
= 150V, I
E
= 0 1µA
I
EBO
Emitter Cut-off Current V
EB
= 6V, I
C
= 0 1 µA
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 10mA, I
B
= 0 160 V
h
FE
DC Current Gain V
CE
= 5V, I
C
= 200mA 100 320
V
CE
(sat) Collector-Emitter Saturation Voltage I
C
= 500mA, I
B
= 50mA 1.5 V
V
BE
(on) Base-Emitter On Voltage V
CE
= 5V, I
C
= 5mA 0.45 0.75 V
f
T
Current Gain Bandwidth Product V
CE
= 5V, I
C
= 200mA 20 100 MHz
C
ob
Output Capacitance V
CB
= 10V, I
E
= 0, f = 1MHz 20 pF
SOT-89
1
1. Base 2. Collector 3. Emitter
23 83
PY WW
h
FE
grage
Year co d e
Weekly code
Marking
2
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FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
hFE Classification
Package Marking and Ordering Information
Classification O Y
h
FE
100 ~ 200 160 ~ 320
Device Marking Device Package Reel Size Tape Width Quantity
2383 FJC2383 SOT-89 13” -- 4,000
3
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FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. DC Current Gain Figure 4. Collector-Emitter Saturation Voltage
Figure 5. Base-Emitter On Voltage Figure 6. Collectro Output Capacitance
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
B
= 10mA
EMITTER COMMON
T
a
=25
o
C
I
B
= 0.5mA
I
B
= 1mA
I
B
= 15mA
I
B
= 6mA
I
B
= 4mA
I
B
= 3mA
I
B
= 2.5mA
I
B
= 2mA
I
B
= 1.5mA
Ic[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
10 100 1000
1
10
100
1000
V
CE
=5V
V
CE
=10V
EMITTER COMMON
h
FE
, DC CURRENT GAIN
I
C
[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
EMITTER COMMON
I
C
/I
B
=10
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1E-3
0.01
0.1
1
I
C
/I
B
=5
EMITTER COMMON
T
a
= 25
o
C
I
C
/I
B
=10
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
I
C
[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0
0.0
0.2
0.4
0.6
0.8
1.0
EMITTER COMMON
I
C
/I
B
=10
I
C
[A], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
1 10 100 1000
1
10
100
1000
EMITTER COMMON
f = 1MHz
T
a
= 25
o
C
C
ob
[pF], CAPACITANCE
V
CB
[V], COLLECTOR BASE VOLTAGE
4
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FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
(Continued)
Figure 7. Current Gain Bandwidth Product
1 10 100 1000
1
10
100
1000
EMITTER COMMON
T
a
= 25
o
C
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
I
C
[mA], COLLECTOR CURRENT
5
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FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
0.40 ±0.10
2.50 ±0.20 (0.50)
(0.40)
4.10 ±0.20
0.40 +0.10
–0.05
0.50 ±0.10
1.65 ±0.10
4.50 ±0.20 1.50 ±0.20
C0.2
1.50 TYP 1.50 TYP
(1.10)
SOT-89
Dimensions in Millimeters
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
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FJC2383 Rev. B
FJC2383 NPN Epitaxial Silicon Transistor
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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