e PLASTIC SILICON OPTOELECTRONICS PHOTOTRANSISTOR QSC112/113/114 PACKAGE DIMENSIO ION. nel __.126 (3.20) The QSC11X is a silicon phototransistor encapsulated in REFERENCE 106 (2.69) an infrared transparent, black T-1 package. SURFACE yoN SE 0.30 (0.76) 203 (5.16) NOM 183 (4.65) i oN | a 4 B Tight production distribution. EMITTER Steel lead frames for improved reliability in solder .042 (1.07) J | mounting. +.010 (+.25) 800, (20.3) = Good optical-to-mechanical alignment. (| COLLECTOR @ Plastic package is infrared transparent black to attenuate visible light. m= Mechanically and spectrally matched to the QECXXX 050 (1.27)4 L LED P y REF -110 (2.79) : ai 4 050 (229) m Black plastic body allows easy recognition from LED. .018 (0.46) SQ ( +.003 (40.08) 4 TYP2PLCS. F | 165 (4.19) 145 (3.68) $T2142 NOTES: 4. DIMENSIONS ARE IN INCHES (mm). 2. TOLERANCE IS +.010 (.25) UNLESS OTHERWISE SPECIFIED. 3. FLAT DENOTES CATHODE.@ PLASTIC SILICON OPTOELECTROMICS PHOTOTRANSISTOR UTE MAXIM Storage Temperature 0. eee eee ene t nee 40C to + 100C Operating Temperature 2.0.6... nn nent n rn tree enn eas 40C to + 100C Soldering: Lead Temperature (ION) 02... 0. eee ene teeter ene renee eee 240C for 5 sec. #9 Lead Temperature (FIOW) 2.000602 tne nes 260C for 10 sec. Collector-Emitter Breakdown Voltage 1... ee een ene EE ene neta nn eee ee 30 Volts Emitter-Collector Breakdown Voltage... 10... en enn eee e nee enter re teee 5.0 Volts Power Dissipation 20.00.0060 EE Cnn rennet nen ee 100 mw? PARAMETER SYMBOL Collector-Emitter Breakdown BV ceo 30 Vv I, = 1.0 mA Emitter-Collector Breakdown BV eco 5.0 Vv Ie = 100 pA Collectar-Emitter Leakage loeo 100 nA Voe = 10V Reception Angle at 1 Sensitivity 8 +8 Degrees On-State Collector Current QSC112 leony 1.0 4.0 mA Ee = 0.5 mW/cm, Vee = 5V On-State Collector Current QSC113 loon 2.4 9.6 mA Ee = 0.5 mWicm, Vce = SV On-State Collector Current QSC114 leon 4.0 _ mA Ee = 0.5 mW/cm, Voz = 5V Rise Time t 5.0 _ us lo = 2 MA, Veo = 5 V,R. = 1002 Fall Time t _ 5.0 _ BS lo = 2MA, Veco = 5 V, R, = 1000 Saturation Voltage Veoeisan _ 0.40 v I, = 0,50 mA, Ee = 0.5 mWi/em?** OTES Derate power dissipation linearly 1.33 mMW/C above 25C. , RMA flux is recommended. . Methanol or Isopropyl alcohols are recommended as cleaning agents. . Soldering iron tip Vs" (1.6 mm) minimum from housing. . As long as leads are not under any stress or spring tension. . Light source is an AlGaAs LED emitting light at a peak wavelength of 880 nm. Ros a Da