VN2106 VN2110 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS(ON) BVDGS (max) 60V 100V 4.0 4.0 TO-92 TO-236AB* Die VN2106N3 -- - VN2110K1 -- VN2110ND Product marking for SOT-23: N1A where = 2-week alpha date code MIL visual screening available *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels. Features Advanced DMOS Technology Commercial and Military versions available These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Supertex vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Motor controls Amplifiers Package Options Power supply circuits Converters Switches Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) D G S Absolute Maximum Ratings TO-236AB Drain-to-Source Voltage BVDSS (SOT-23) Drain-to-Gate Voltage BVDGS top view Gate-to-Source Voltage 20V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55C to +150C 300C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2106/VN2110 Thermal Characteristics Package ID (continuous) ID (pulsed) Power Dissipation* jc ja @ TC = 25C C/W C/W IDR IDRM TO-92 0.3A 1.0A 1.0W 125 170 0.3A 1.0A TO-236AB 0.2A 0.8A 0.36W (TA = 25C) 200 350 0.2A 0.8A ID (continuous) is limited by max rated Tj. * Total for package. Electrical Characteristics (@ 25C unless otherwise specified) Parameter Min Drain-to-Source Breakdown Voltage BVDSS VN2110 100 VN2106 60 VGS(th) Gate Threshold Voltage V GS(th) Change in VGS(th) with Temperature IGSS Gate Body Leakage IDSS Zero Gate Voltage Drain Current Typ Max Unit Conditions V ID = 1mA, VGS = 0V 2.4 V VGS = VDS, ID = 1mA -3.8 -5.5 mV/C VGS = VDS, ID = 1mA 0.1 100 nA VGS = 20V, VDS = 0V 1 A VGS = 0V, VDS = Max Rating 100 A VGS = 0V, VDS = 0.8 Max Rating TA = 125C A VGS = 10V, VDS = 25V 0.8 ID(ON) ON-State Drain Current RDS(ON) Static Drain-to-Source ON-State Resistance RDS(ON) Change in RDS(ON) with Temperature GFS Forward Transconductance CISS Input Capacitance 35 50 COSS Common Source Output Capacitance 13 25 CRSS Reverse Transfer Capacitance 4 5 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 6 9 tf Fall Time 5 8 VSD Diode Forward Voltage Drop 1.2 1.8 trr Reverse Recovery Time 400 0.6 4.5 3.0 6.0 4.0 VGS = 5V, ID = 75mA VGS = 10V, ID = 500mA 0.70 1.0 %/C VGS = 10V, ID = 500mA 150 400 m Symbol VDS = 25V, ID =0.5A pF VGS = 0V, VDS = 25V, f = 1MHz ns VDD = 25V ID = 0.6A RGEN = 25 V ISD = 0.6A, VGS = 0V ns ISD = 0.6A, VGS = 0V Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) Rgen t(OFF) tr td(OFF) OUTPUT tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 2 VN2106/VN2110 Typical Performance Curves Output Characteristics Saturation Characteristics 2.0 2.0 VGS = VGS = 10V 1.6 1.6 10V ID (amperes) ID (amperes) 9V 1.2 8V 0.8 7V 9V 1.2 8V 0.8 7V 6V 0.4 5V 3V 0 0 10 20 30 40 6V 0.4 5V 4V 4V 3V 0 0 50 2 4 VDS (volts) 8 10 Power Dissipation vs. Case Temperature Transconductance vs. Drain Current 2.0 0.5 VDS = 25V 0.4 TA = -55C 0.3 PD (watts) GFS (siemens) 6 VDS (volts) 25C 0.2 125C TO-92 1.0 TO-236AB 0.1 0 0 0 0.2 0.4 0.6 0.8 1.0 0 25 50 ID (amperes) Thermal Resistance (normalized) ID (amperes) TO-92 (pulsed) TO-92 (DC) 0.01 0.1 150 1.0 SOT-23 (pulsed) 0.1 125 100 Thermal Response Characteristics Maximum Rated Safe Operating Area 10 1.0 75 TC (C) SOT-23 (DC) 0.8 0.6 0.4 TO-236AB PD = 0.36W TA = 25C TO-92 PD = 1W 0.2 TC = 25C T A = 25C 1 10 0 0.001 100 VDS (volts) 0.01 0.1 tp (seconds) 3 1.0 10 VN2106/VN2110 Typical Performance Curves BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 VGS = 5V RDS(ON) (ohms) BVDSS (normalized) 8 1.0 VGS = 10V 6 4 2 0.9 0 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 ID (amperes) Tj (C) Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature 2.0 2.0 1.4 RDS(ON) @ 10V, 0.5A VGS(th) (normalized) ID (amperes) TA = -55C 1.2 0.8 25C 125C 1.6 1.2 1.2 1.0 0.8 VGS(th) @ 1mA 0.8 0.4 RDS(ON) (normalized) VDS = 25V 1.6 0.4 0.6 0 0 0 2 4 6 8 -50 10 0 50 VGS (volts) 100 150 Tj (C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 50 f = 1MHz VDS = 10V CISS VGS (volts) C (picofarads) 8 25 90 pF 6 4 COSS 2 VDS = 40V 30 pF CRSS 0 0 0 10 20 30 0 40 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 11/12/01 (c)2001 Supertex Inc. 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