BPW20RF
www.vishay.com Vishay Semiconductors
Rev. 1.7, 11-Aug-11 1Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon Photodiode, RoHS Compliant
DESCRIPTION
BPW20RF is a planar Silicon PN photodiode in a
hermetically sealed short TO-5 case, especially designed for
high precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
Equipped with a clear, flat glass window, the spectral
responsitivity reaches from blue to near infrared.
FEATURES
Package type: leaded
Package form: TO-5
Dimensions (in mm): Ø 8.13
Radiant sensitive area (in mm2): 7.5
High photo sensitivity
High radiant sensitivity
Suitable for visible and near infrared radiation
Angle of half sensitivity: = ± 50°
Hermetically sealed package
Cathode connected to package
Flat glass window
UV enhanced
Low dark current
High shunt resistance
High linearity
Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
Sensor for light measuring techniques in cameras,
photometers, color analyzers, exposure meters (e.g.
solariums) and other medical and industrial measuring
and control applications.
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8482
PRODUCT SUMMARY
COMPONENT Ira (μA) (deg) 0.1 (nm)
BPW20RF 60 ± 50 400 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW20RF Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR10 V
Power dissipation Tamb 50 °C PV300 mW
Junction temperature Tj125 °C
Operating temperature range Tamb - 40 to + 125 °C
Storage temperature range Tstg - 40 to + 125 °C
Soldering temperature t 5 s Tsd 260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm2 R
thJA 250 K/W
BPW20RF
www.vishay.com Vishay Semiconductors
Rev. 1.7, 11-Aug-11 2Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF1.0 1.3 V
Breakdown voltage IR = 20 μA, E = 0 V(BR) 10 V
Reverse dark current VR = 5 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD1.2 nF
VR = 5 V, f = 1 MHz, E = 0 CD400 pF
Dark resistance VR = 10 mV RD38 G
Open circuit voltage EA = 1 klx Vo330 500 mV
Temperature coefficient of VoEA = 1 klx TKVo - 2 mV/K
Short circuit current EA = 1 klx Ik20 60 μA
Temperature coefficient of IkEA = 1 klx TKIk 0.1 %/K
Reverse light current
EA = 1 klx, VR = 5 V Ira 20 60 μA
Ee = 1 mW/cm2, = 950 nm,
VR = 5 V Ira 42 μA
Angle of half sensitivity ± 50 deg
Wavelength of peak sensitivity p920 nm
Range of spectral bandwidth 0.1 400 1100 nm
Rise time VR = 0 V, RL = 1 k, = 820 nm tr3.4 μs
Fall time VR = 0 V, RL = 1 k, = 820 nm tf3.7 μs
40 60 80 120
10020
I - Reverse Dark Current (nA)
ro
94 8468
10
10
1
10
2
10
3
10
4
V
R
=5V
T
amb
- Ambient Temperature (°C)
0.8
0.9
1.0
1.1
1.3
1.2
I - Relative Reverse Light Current
ra rel
94 8469
V
R
=5V
λ= 950 nm
T
amb
- Ambient Temperature (°C)
40 60 80 120100200
BPW20RF
www.vishay.com Vishay Semiconductors
Rev. 1.7, 11-Aug-11 3Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Short Circuit Current vs. Illuminance
Fig. 4 - Reverse Light Current vs. Irradiance
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Ik - Short Circuit Current (µA)
EA- Illuminance (lx)
100
10-2 10-1 101102103104
100
10-1
10-2
10-3
10-4
101
102
105
18959
103
0.1
1
10
100
0.01 0.1 1
I - Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm
2
)
10
94 8471
V
R
=5V
λ= 950 nm
0.1 1 10
1
10
100
V
R- Reverse Voltage (V)
100
94 8472
λ= 950 nm
2
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
I - Reverse Light Current (µA)
ra
0
400
600
800
1200
1400
1000
200
0.1 101
C - Diode Capacitance (pF)
D
100
94 8473
E=0
f=1MHz
V
R
- Reverse Voltage (V)
94 8474
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
λ- Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 0
94 8475
0.6
0.9
0.8
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S - Relative Sensitivity
rel
ϕ - Angular Displacement
BPW20RF
www.vishay.com Vishay Semiconductors
Rev. 1.7, 11-Aug-11 4Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
-
+
5.08 nom.
Ø 8.13
Ø 5.9
Ø 0.45
- 1 ± 0.2
± 0.1
- 0.05
+ 0.02
± 0.1
Chip position
± 0.1
9.1
Issue:1; 01.07.96
Drawing-No.: 6.511-5002.01-4
specifications
according to DIN
technical drawings
(1.65)
14 3.1
96 12181
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
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