Symbol Parameter Conditions Ratings Unit
VCC Supply voltage 10 V
VCEO Collector-emitter voltage Output, H –0.5 ～ +50 V
IC Collector curre nt C urre nt pe r circuit output, L 400 mA
VI Input voltage –0.5 ～ VCC V
Pd Power dissipation Ta = 25°C, when mounted on board 1.47 W
Topr Operating temp er atu re –20 ～ +75 ℃
Tstg Storage temperature –55 ～ +125 ℃
Package type 16P4X
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APPLICATION
DESCRIPTION
M54566WP are seven-circuit collector-current synchro-
nized Darlington transistor arrays. The circuits are made of
PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extre-
mely low input-current supply.
PIN CONFIG URATION
FEATURES
'09-01
FUNCTION
M54566WP
MITSUBISHI SEMICONDUCTOR <TRA NSISTOR ARRAY>
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
●High breakdown voltage (BVCEO> 50V)
●High-current driving (Ic(max) = 400mA)
●Active L-level input
Interfaces between microcomputers and high-voltage,
highcurrent
drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
The M54566 is produced by adding PNP transistors to
M54522 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kW is provided between each input and PNP
transistor base. The input emitters are connected to VCC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter
supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O1
→O2
→O3
→O4
→O5
→O6
→O7
IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
GND VCC
OUTPUT
INPUT
VCC
OUTPUT
INPUT
CIRCUIT DIAGRAM
8K
20K
3K GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
2.7K
7.2K
Limits
Symbol Parameter min typ max Unit
VCC Supply voltage 4 5 8 V
VO Output voltage 0 － 50 V
VCC=5V Duty Cycle
no more than 10% 0 － 350
IC
Collector current
(Current per 1
circuit when 7
circuits are coming
on simultaneously) VCC=5V Duty Cycle
no more than 30% 0 － 200
mA
VIH “H” input voltage VCC-0.2 － VCC V
VIL “L” input voltage 0 － VCC-3 V
Limits
Symbol Parameter Test conditions min typ max Unit
V(BR)CEO Collector-emitter breakdown
voltage ICEO = 100μA 50 — — V
VI = VCC - 3V, IC = 350mA — 1.1 2.2
VCE(sat) Collector-emitter saturation
voltage VI = VCC - 3V, IC = 200mA — 0.9 1.6 V
II Input current VI = VCC – 3.5V — -0.3 -0.58 mA
ICC Supply current (one circuit
coming on) VCC=5V, VI=VCC-3.5V — 1.4 3.0 mA
hFE DC amplification factor VCE = 4V, VCC=5V, IC = 350mA, Ta = 25℃ 2000 10000 — —
Limits
Symbol Parameter Test conditions min typ max Unit
ton Turn-on time — 95 — ｎｓ
toff Turn-off time CL = 15pF (note 1） — 2500 — ｎｓ
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M54566WP
MITSUBISHI SEMICONDUCTOR <TRA NSISTOR ARRAY>
7- UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS
ELECTRICAL CHARACTERISTIC S (Unless otherwise noted, Ta = –20 ~ +75°C)
* : The typical values are those measured under ambient temperature (Ta) of 25
℃
. There is no guarantee that these values are obtained under any conditions.
SWITCHING CHARACTERI STICS (Unless otherwise noted, Ta = 25°C)
NOTE 1 TEST CIRCUIT
50Ω CL
RL
VO
PG
INPUT
OUTPUT
Measured
device
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 1 to 4V
(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TIMING DIAGRAM
OUTPUT
INPUT
50%
50%
ｔon
50%
50%
ｔoff
VCC
*
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M54566WP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7- UNIT 400mA DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta(℃)
Power dissipa tion Pd(W)
0 25 50 75 100
0
0.5
1.0
1.5
2.0
M54566WP
Out
p
ut Saturation Volta
g
e
Output saturation voltage VCE(sat)(V)
Collector current IC(mA)
0 0.5 1.0 1.5 2.0
0
100
200
300
400
Duty-Cycle-Collector Characteristics
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
500
•The collector current values
represent the current per circuit.
•Repeated frequency ≧ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Vcc=5V •Ta = 25℃
①
40
400
②
③
④
⑤
⑦
⑥
Duty-Cycle-Collector Characteristics
Duty cycle (%)
Collector current IC(mA)
0 20 60 80 100
0
100
200
300
500
•The collector current values
represent the current per circuit.
•Repeated frequency ≧ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•Vcc=5V •Ta = 75℃
①
40
400
②
③
④
⑤
⑦⑥
DC Amplification Factor
Collector Current Characteristics
Collector current Ic(mA)
DC amplification factor hFE
10
10
7
Ta=25℃
Ta=-20℃
Ta=75℃
VCC=4V
VCE=4V
5
3
2
3
10 2
4
7
5
3
2
107532 3
10 2
7 5 32
10 1
Grounded Emitter Transfer Characteristics
Supply voltage-Input voltage VCC-VI(V)
Collector current IC(mA)
0 0.4 0.8 1.2 1.6
0
100
200
300
400
Ta=25℃
Ta=-20℃
Ta=75℃
VCC=4V
VCE=4V
Ta=25℃
Ta=-20℃
Ta=75℃
VCC=4V
VI=1V
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M54566WP
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
7- UNIT 400mA DARLINGTON TRANSISTOR ARRAY
Input Characteristics
Supply voltage-Input voltage VCC-VI(V)
Input current II(mA)
0 1 2 4 5
0
-0.2
-0.6
-0.8
-1.0
3
Supply Current Characteristics
Supply Voltage VCC(V)
Supply current ICC(mA)
024 8 10
0
1
2
4
5
6
Ta=25℃
Ta=-20℃
Ta=75℃
VI=0V
3
VCC=8V
-0.4 Ta=25℃
Ta=-20℃
Ta=75℃
