MITSUBISHI SEMICONDUCTOR TRIAC BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5AM OUTLINE DRAWING Dimensions in mm 3.20.2 4.5 1.3 4 7.0 16 MAX 10.5 MAX TYPE NAME VOLTAGE CLASS 3.60.2 12.5 MIN 3.8 MAX 1.0 0.8 2.5 0.5 2.6 4.5 2.5 123 24 * IT (RMS) ........................................................................ 5A * VDRM ..............................................................400V/600V * IFGT !, IRGT !, IRGT # ......................... 20mA (10mA) 5 1 1 2 3 3 4 Measurement point of case temperature T1 TERMINAL T2 TERMINAL GATE TERMINAL T2 TERMINAL TO-220 APPLICATION Switching mode power supply, light dimmer, electric flasher unit, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet, solenoid drivers, small motor control, copying machine, electric tool, other general purpose control applications MAXIMUM RATINGS Symbol Voltage class Parameter 8 12 Unit VDRM Repetitive peak off-state voltage 1 400 600 V VDSM Non-repetitive peak off-state voltage 1 500 720 V Conditions Parameter Symbol IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc =103C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Ratings Unit 5 A 50 A 10.4 A2s 3 W 0.3 W Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Storage temperature Tstg -- Weight Typical value A -40 ~ +125 C -40 ~ +125 C 2.0 g 1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol Limits Test conditions Parameter Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125C, V DRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM =7A, Instantaneous measurement -- -- 1.8 V -- -- 1.5 V -- -- 1.5 V 1.5 ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD =6V, RL=6, RG=330 VRGT # # -- -- IFGT ! ! -- -- 20 5 mA -- -- 20 5 mA -- -- 20 5 mA 0.2 -- -- V -- -- 3.0 C/ W 3 -- -- V/s IRGT ! Gate trigger current 2 @ Tj=25C, VD =6V, RL=6, RG=330 # IRGT # VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM R th (j-c) Thermal resistance Junction to case 4 (dv/dt) c Critical-rate of rise of off-state commutating voltage V 2. Measurement using the gate trigger characteristics measurement circuit. 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below. 4. The contact thermal resistance R th (c-f) in case of greasing is 1.0C/W. 5. High sensitivity (I GT10mA) is also available. (IGT item 1) Voltage class VDRM (V) 8 400 (dv/dt) c Symbol Min. R -- SUPPLY VOLTAGE 1. Junction temperature Tj =125C L 5 V/s R 12 Commutating voltage and current waveforms (inductive load) Test conditions Unit -- 2. Rate of decay of on-state commutating current (di/dt)c=-2.5A/ms 3. Peak off-state voltage VD =400V 600 L TIME MAIN CURRENT (di/dt)c TIME MAIN VOLTAGE TIME (dv/dt)c 5 VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 101 7 5 3 2 100 7 5 3 2 100 Tj = 125C Tj = 25C 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 102 7 5 3 2 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR5AM MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 102 7 5 3 2 VGM = 10V 101 7 5 PGM = 0.3W 3 VGT = 1.5V 2 Tj = 25C 100 7 IGT = 20mA 5 PGM = 3W IGM = 2A 3 2 VGD = 0.2V 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) GATE CHARACTERISTICS 103 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 101 -60 -40 -20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (C/W) 102 7 5 4 3 2 102 2 3 5 7 103 2 3 5 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 JUNCTION TEMPERATURE (C) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 8 160 7 140 CASE TEMPERATURE (C) 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) ON-STATE POWER DISSIPATION (W) TYPICAL EXAMPLE 6 360 CONDUCTION 5 RESISTIVE, INDUCTIVE 4 LOADS 3 2 1 0 IRGT I JUNCTION TEMPERATURE (C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 0 IRGT III 102 IFGT I 7 5 4 3 2 GATE CURRENT (mA) 103 7 5 4 3 2 TYPICAL EXAMPLE 1 2 3 4 5 6 7 RMS ON-STATE CURRENT (A) 8 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 1 2 3 4 5 6 7 8 RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR5AM MEDIUM POWER USE 60 NATURAL 40 CONVECTION RESISTIVE, CURVES APPLY 20 REGARDLESS OF INDUCTIVE CONDUCTION ANGLE LOADS 0 0 8 1 2 3 4 5 6 7 40 20 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT (mA) 103 7 5 3 2 102 7 5 4 3 2 101 7 5 4 3 2 VD = 12V ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 102 -60 -40 -20 0 20 40 60 80 100 120 140 101 7 5 3 2 60 RMS ON-STATE CURRENT (A) 104 7 5 3 2 102 7 5 3 2 80 RMS ON-STATE CURRENT (A) 105 7 TYPICAL EXAMPLE 5 3 2 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE T2+, G+ TYPICAL T2- , G- EXAMPLE ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION T2+, G- TYPICAL EXAMPLE 100 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 100 (%) 103 7 5 3 2 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 0 BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) LACHING CURRENT (mA) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 120 120 t2.3 120 100 100 t2.3 100 60 60 t2.3 80 100 (%) AMBIENT TEMPERATURE (C) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR5AM MEDIUM POWER USE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 140 120 100 80 I QUADRANT 60 III QUADRANT 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) 100 (%) NON-INSULATED TYPE, PLANAR PASSIVATION TYPE COMMUTATION CHARACTERISTICS 102 7 5 4 3 2 100 (%) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 103 7 5 4 3 2 (dv/dt)C t VD CURRENT WAVEFORM (di/dt)C IT 101 7 5 4 3 MINIMUM 2 CHARACTERISTICS VALUE 0 10 0 2 3 4 5 7 101 10 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH VOLTAGE WAVEFORM TYPICAL EXAMPLE Tj = 125C IT = 4A = 500s VD = 200V f = 3Hz t I QUADRANT III QUADRANT 2 3 4 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 TYPICAL EXAMPLE IRGT III A 6V IRGT I 102 7 5 4 3 2 V TEST PROCEDURE 1 IFGT I A 6V RG V RG TEST PROCEDURE 2 6 A 6V 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) V RG TEST PROCEDURE 3 Feb.1999