HE8050 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R211-018,C
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
SOT-23 350 mW
SOT-89 500 mW
Collector Dissipation TO-92/TO-92NL Pc 1 W
Collector Current IC 1.5 A
Junction Temperature TJ +150 °C
Storage Temperature TSTG -65 ~ +150 °C
Note: Absolute maximum ratings are thos e values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100μA,IE=0 40 V
Collector-Emitter Breakdown Voltage BVCEO I
C=2mA,IB=0 25 V
Emitter-Base Breakdown Voltage BVEBO I
E=100μA,IC=0 6 V
Collector Cut-Off Current ICBO V
CB=35V,IE=0 100 nA
Emitter Cut-Off Current IEBO V
EB=6V,IC=0 100 nA
hFE1 V
CE=1V,IC=5mA 45 135
hFE2 V
CE=1V,IC=100mA 85 160 500
DC Current Gain hFE3 V
CE=1V,IC=800mA 40 110
Collector-Emitter Saturation Voltage VCE(SAT) I
C=800mA,IB=80mA 0.5 V
Base-Emitter Saturation Voltage VBE(SAT) I
C=800mA,IB=80mA 1.2 V
Base-Emitter Saturation Voltage VBE V
CE=1V,IC=10mA 1.0 V
Current Gain Bandwidth Product fT V
CE=10V,IC=50mA 100 MHz
Output Capacitance Cob VCB=10V,IE=0
f=1MHz 9.0 pF
CLASSIFICATION of hFE2
RANK C D E
RANGE 120-200 160-300 250-500