UNISONIC TECHNOLOGIES CO., LTD
HE8050 NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R211-018,C
LOW VOLTAGE HIGH
CURRENT SMALL SIGNAL
NPN TRANSISTOR
DESCRIPTION
The UTC HE8050 is a lo w voltage high current small signal NPN
transistor, designed for Class B push-pull 2W audio amplifier for
portable radio and general purpose applications.
FEATURES
*Collector current up to 1.5A
*Collector-Emitter voltage up to 25 V
*Complimentary to UTC HE85 50
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3 Packing
HE8050-x-AB3-R HE8050L-x-AB3-R HE8050G-x-AB3-R SOT-89 B C E Tape Reel
HE8050-x-AE3-R HE8050L-x-AE3-R HE8050G-x-AE3-R SOT-23 E B C Tape Reel
HE8050-x-T92-B HE8050L-x-T92-B HE8050G-x-T92-B TO-92 E C B Tape Box
HE8050-x-T92-K HE8050L-x-T92-K HE8050G-x-T92-K TO-92 E C B Bulk
HE8050-x-T9N-B HE8050L-x-T9N-B HE8050G-x-T9N-B TO-92NL E C B Tape Box
HE8050-x-T9N-K HE8050L-x-T9N-K HE8050G-x-T9N-K TO-92NL E C B Bulk
MARKING (For SOT-23 Package)
DA L: Lead Free
G: Halogen Free
HE8050 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R211-018,C
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 6 V
SOT-23 350 mW
SOT-89 500 mW
Collector Dissipation TO-92/TO-92NL Pc 1 W
Collector Current IC 1.5 A
Junction Temperature TJ +150 °C
Storage Temperature TSTG -65 ~ +150 °C
Note: Absolute maximum ratings are thos e values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified.)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100μA,IE=0 40 V
Collector-Emitter Breakdown Voltage BVCEO I
C=2mA,IB=0 25 V
Emitter-Base Breakdown Voltage BVEBO I
E=100μA,IC=0 6 V
Collector Cut-Off Current ICBO V
CB=35V,IE=0 100 nA
Emitter Cut-Off Current IEBO V
EB=6V,IC=0 100 nA
hFE1 V
CE=1V,IC=5mA 45 135
hFE2 V
CE=1V,IC=100mA 85 160 500
DC Current Gain hFE3 V
CE=1V,IC=800mA 40 110
Collector-Emitter Saturation Voltage VCE(SAT) I
C=800mA,IB=80mA 0.5 V
Base-Emitter Saturation Voltage VBE(SAT) I
C=800mA,IB=80mA 1.2 V
Base-Emitter Saturation Voltage VBE V
CE=1V,IC=10mA 1.0 V
Current Gain Bandwidth Product fT V
CE=10V,IC=50mA 100 MHz
Output Capacitance Cob VCB=10V,IE=0
f=1MHz 9.0 pF
CLASSIFICATION of hFE2
RANK C D E
RANGE 120-200 160-300 250-500
HE8050 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 4
www.unisonic.com.tw QW-R211-018,C
TYPICAL CHARACTERISTICS
Static Characteristics
Collector-Emitter Voltage ( V)
Collector Current, Ic (mA)
0 0.4 0.8 1.2 1.6 2.0
0
0.1
0.2
0.3
0.4
0.5
IB=0.5mA
IB=1.0mA
IB=1.5mA
IB=2.0mA
IB=2.5mA
IB=3.0mA
DC Current Gain
Collector Current, Ic (mA)
DC current Gain, hFE
102
101
100
103
103
102
101
100
10
-1
VCE=1V
Current Gain-Bandwidth
Product Collector Output Capacitance
Collector Current, Ic (mA)
100101102
103
Current Gain-Bandwidth Product, fT(MHz)
100
101
102
VCE=10V
Collector-Base Voltage (V)
Capacitance, Cob (pF)
103
103
100
101
102
100101102103
f=1MHz
IE=0
Base-Emitter on Voltage
100
101
102
103
Collector Current, Ic (mA)
Base-Emitter Voltage (V)
0.2 0.4 0.6 0.8 1.0 1.2
VCE=1V
Collector Current, Ic (mA) 103
102
101
100
10
-1
Saturation Voltage (mV)
101
102
103
104
Saturation Voltage
VBE(SAT)
Ic=10*IB
VCE(SAT)
HE8050 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R211-018,C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UT C products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.