Discrete POWER & Signal Technologies GES MIB AN TAL DGS TEIR ne E SOT-23 Mark: FF NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 30 Vv Vcso Collector- Base Voltage 40 Vv VeBo Emitter-Base Voltage 10 Vv Io Collector Current - Continuous 1.2 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units *BCV27 Pp Total Device Dissipation 350 mW Derate above 25C 28 mWw/C Roa Thermal Resistance, Junction to Ambient 357 C/W * Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation LAQdElectrical Characteristics NPN Darlington Transistor TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min | Typ | Max |Units OFF CHARACTERISTICS Viprjceo Collector-Emitter Breakdown Voltage lo = 10 mA, Ig = 0 30 Vv Vierycso Collector- Base Breakdown Voltage lo = 10 pA, le=0 40 Vv VipRjeso Emitter-Base Breakdown Voltage le = 100 nA, Ip = 0 10 Vv loBo Collector- Cutoff Current Ves = 30 V, le=0 0.1 HA leBo Emitter-Cutoff Current Vep= 10 V, Ilo=0 0.1 yA ON CHARACTERISTICS hre DC Current Gain lo = 1.0 MA, Vce = 5.0 V 4,000 lo = 10 MA, Vce = 5.0 V 10,000 lo = 100 mA, Vce = 5.0 V 20,000 Voe(saty Collector-Emitter Saturation Voltage le = 100 mA, Ip= 0.1 mA 1.0 Vv Veesat Base-Emitter Saturation Voltage lp = 100 mA, Ip = 0.1 mA 1.5 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Io = 30 mA, Voce = 5.0 V, 220 MHz f = 100 MHz Co Collector Capacitance Vos = 30 V, le = 0, f = 1.0 MHz 3.5 pF Typical Characteristics Typical Pulsed Current Gain vs Collector Current 250 200 Vop= SV 150 100 50 0 0.001 0.01 0.1 Ig - COLLECTOR CURRENT (A) h,--- TYPICAL PULSED CURRENT GAIN (K) Collector-Emitter Saturation Voltage vs Collector Current o B = 1000 io i Qo 10 100 I,- COLLECTOR CURRENT (mA) Voesar COLLECTOR EMITTER VOLTAGE (V) 1000 LAQdNPN Darlington Transistor (continued) Typical Characteristics (continued) Base-Emitter Saturation Voltage vs Collector Current B = 1000 -40 i) o a o mn Veegar> BASE EMITTER VOLTAGE (V) Qo 10 100 1000 I- COLLECTOR CURRENT (mA) Collector-Cutoff Current vs Ambient Temperature Q oO Qo Iggo7 COLLECTOR CURRENT (nA) 2 50 75 100 125 T,- AMBIENT TEMPERATURE (C) nN a Input and Output Capacitance vs Reverse Voltage f=1.0 3 8 CAPACITANCE (pF) a 01 1 10 100 Vee" COLLECTOR VOLTAGE(V) np o B Qo Veeon - BASE EMITTER ON VOLTAGE (V) iy Q g S a F g BVcer - BREAKDOWN VOLTAGE (V) 8 oa f+ - GAIN BANDWIDTH PRODUCT (MHz) 2 Base Emitter ON Voltage vs Collector Current Voe= 5V 10 100 1000 |, - COLLECTOR CURRENT (mA) Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 10 100 1000 RESISTANCE (kQ) Gain Bandwidth Product vs Collector Current 10 20 50 |,- COLLECTOR CURRENT (mA) 100 150 LAQdNPN Darlington Transistor (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature wo oa oO wo oS oO nm oa oO 200 P ,- POWER DISSIPATION (mW) ao & oO oO oO oO 0 25 50 75 100 TEMPERATURE (C) 125 150 LAQdTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT qs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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