053-7039 Rev - 9-2002
MS1001
DESCRIPTION:
DESCRIPTION:DESCRIPTION:
DESCRIPTION:
The MS1001 is a 12.5V Class C silicon NPN transistor
designed primarily for HF communications. Diffused
emitter resistors provide infinite VSWR capability
under rated operating conditions.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°
°°
°C)
S
y
mbol Paramete
r
V
alue Unit
V
CBO Collecto
r
-Base Volta
g
e 36
V
VCEO Collector-Emitter Voltage 18 V
VEBO Emitter-Base Voltage 4.0 V
IC Device Current 20 A
PD Total Dissipation 270 W
Tj Junction Temperature 200 ºC
TSTG Storage Temperature -65 to +150 ºC
Thermal Data
Thermal DataThermal Data
Thermal Data
RTH(J-C) Thermal Resistance Junction-case 0.65 °
°°
°C/W
Features
FeaturesFeatures
Features
• 30 MHz
• 12.5 VOLTS
• IMD = -32 dBc
• INFINITE VSWR CAPABILITY @ RATED CONDITIONS
• POUT = 75 WATTS
• GP = 13dB MINIMUM
• COMMON EMITTER CONFIGURATION
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
053-7039 Rev - 9-2002
MS1001
ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25
ELECTRICAL SPECIFICATIONS (Tcase = 25°
°°
°C)
C)C)
C)
STATIC
STATICSTATIC
STATIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
BVCBO I
C = 50 mA IE = 0 mA 36 --- --- V
BVCES I
C = 100 mA VBE = 0 V 36 --- --- V
BVCEO I
C = 100 mA IB = 0 mA 18 --- --- V
BVEBO I
E = 10 mA IC = 0 mA 4.0 --- --- V
ICES V
CE = 15 V IE = 0 mA --- --- 15 mA
hFE VCE = 5 V IC = 5 A 20 --- 200 ---
DYNAMIC
DYNAMICDYNAMIC
DYNAMIC
S
y
mbol Test Conditions
V
alue
Min. T
yp
. Max. Unit
POUT f = 30MHz PIN = 3.8 W VCE =12.5V 75 --- --- WPEP
GP f = 30MHz PIN = 3.8 W VCE =12.5V 13 --- --- dB
IMD* f = 30MHz VCC =12.5V ICQ = 100mA --- --- -32 dBC
COB f = 1 MHz VCB =12V --- --- 410 pf
Conditions f1 = 30.000 MHz f2 = 30.001 MHz
IMPEDANCE DATA
IMPEDANCE DATAIMPEDANCE DATA
IMPEDANCE DATA
FREQ ZIN(Ω)
Ω)Ω)
Ω) ZCL(Ω)
Ω)Ω)
Ω)
30 MHz 0.7 + j0.75 1.2 + j1.0
P
IN = 3.8W
V
CC=12.5V
053-7039 Rev - 9-2002
MS1001
PACKAGE MECHANICAL DATA
