71014 TKIM/82008GB TKIM TC-00001480 No. A1285-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2014
July, 2014
TF202THC
N-Channel JFET
20V, 140 to 350μA, 1.0mS, VTFP
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Ordering number : ENA1285B
Features
• Ultrasmall package facilitates miniaturization in end products
•
Especially suited for use in electret condenser microphone for audio equipments and telephones
•
Excellent voltage characteristics
•
Excellent transient characteristics
•
Adoption of FBET process
•
Halogen free compliance
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate to Drain Voltage VGDO --20 V
Gate Current IG10 mA
Drain Current ID1mA
Allowable Power Dissipation PD100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7031A-001
1 : Drain
2 : Source
3 : Gate
VTFP
1
3
12
2
3
1.4
1.2
0.8
0.34
0.07 0.07 0.2 0.2
0.25
0.2
0.45
0.1
0 to 0.02
TF202THC-4-TL-H
TF202THC-5-TL-H
Product & Package Information
• Package : VTFP
• JEITA, JEDEC : SC-106A
• Minimum Packing Quantity : 8,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
1
3
2
LOT No.
LOT No.
E
RANK
TF202THC
No. A1285-2/6
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Gate to Drain Breakdown Voltage V(BR)GDO IG=--100μA --20 V
Cutoff Voltage VGS(off) VDS=5V, ID=1μA --0.2 --0.6 --1.0 V
Drain Current IDSS VDS=5V, VGS=0V
140* 350*
μA
Forward Transfer Admittance | yfs |VDS=5V, VGS=0V, f=1kHz 0.5 1.0 mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 3.5 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 0.65 pF
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specifi ed Test Circuit.]
Voltage Gain
GV
VIN=10mV, f=1kHz --3.0 dB
Reduced Voltage Characteristic
ΔGVV
VIN=10mV, f=1kHz, VCC=4.5V → 1.5V --1.2 --3.5 dB
Frequency Characteristic
ΔGvf
f=1kHz to 110Hz --1.0 dB
Input Impedance ZIN f=1kHz 25 MΩ
Output Impedance ZOf=1kHz 1000 Ω
Total Harmonic Distortion THD VIN=30mV, f=1kHz 1.2 %
Output Noise Voltage VNO VIN=0V, A Curve --
110
dB
* : The TF202THC is classifi ed by IDSS as follows : (unit : μA)
Rank 4 5
IDSS 140 to 240 210 to 350
Test Circuit
Ordering Information
Device Package Shipping memo
TF202THC-4-TL-H VTFP 8,000pcs./reel Pb Free and Halogen Free
TF202THC-5-TL-H VTFP 8,000pcs./reel
OSC
15pF +
33μF
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Output Impedance
1kΩVCC=4.5V
VCC=1.5V
VAB
VTVM
THD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
TF202THC
No. A1285-3/6
VGS(off) -- IDSS
IT02315
-0.30
-0.35
-0.40
-0.45
-0.50
-0.55
-0.60
-0.65
-0.70
0 100 200 300 400 50
0
VDS=5V
ID=1μA
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0 100 200 300 400 500
| yfs | -- IDSS
IT02314
VDS=5V
VGS=0V
f=1kHz
10
7
5
3
2
2
1.0
1.0 10
23 57723
Ciss -- VDS
IT03814
1.0
7
5
3
5
3
2
2
0.1
1.0 10
23 57723
Crss -- VDS
IT03815
Drain Current, IDSS -- μA
Forward Transfer Admittance, | yfs | -- mS
Drain Current, IDSS -- μA
Cutoff Voltage, VGS(off) -- V
Drain to Source Voltage, VDS -- V
Input Capacitance, Ciss -- pF
Drain to Source Voltage, VDS -- V
Reverse Transfer Capacitance, Crss -- pF
VGS=0V
f=1MHz
VGS=0V
f=1MHz
--1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 --0
500
400
300
200
100
0
ID -- VGS
ID -- VGS
IT02312 IT02313
VDS=5V
400
320
240
160
80
0
--0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0
IDSS=350μA
250μA
150μA
Ta=75°C
VDS=5V
--25°C
Gate to Source Voltage, VGS -- V
Drain Current, ID -- μA
Gate to Source Voltage, VGS -- V
Drain Current, ID -- μA
25°C
450
350
250
50
150
360
280
200
40
120
01 8910234567
500
400
300
200
100
0
ID -- VDS
IT02310
--0.1V
--0.2V
--0.4V
--0.5V
--0.3V
012345
500
400
300
200
100
0
ID -- VDS
IT03015
VGS=0V
--0.1V
--0.2V
--0.4V
--0.5V
--0.3V
Drain to Source Voltage, VDS -- V
Drain Current, ID -- μA
Drain to Source Voltage, VDS -- V
Drain Current, ID -- μA
450
350
250
50
150
450
350
250
50
150
VGS=0V
TF202THC
No. A1285-4/6
0 100 200 300 400 500
27
28
29
30
31
32
26
ZIN -- IDSS
IT02323
910
920
930
940
950
960
900
ZO -- IDSS
IT02324
--119
--118
--117
--116
--115
--114
--113
--112
--111
--120
VNO -- IDSS
IT13913
VNO : VCC=4.5V
V
IN=0V, ACurve
R
L=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
ZO : VCC=4.5V
V
IN=10mV
f=1kHz
IDSS : VDS=5.0V
ZIN :VCC=4.5V
V
IN=10mV
f=1kHz
IDSS : VDS=5.0V
0 100 200 300 400 500
0 100 200 300 400 500
Drain Current, IDSS -- μA
Input Impedance, ZIN -- MΩ
Drain Current, IDSS -- μA
Output Impedance, ZO -- Ω
Drain Current, IDSS -- μA
Output Noise Voltage, VNO -- dB
0 100 200 300 400 500
0
THD -- IDSS
IT13912
0.5
1.0
1.5
2.0
2.5
Drain Current, IDSS -- μA
Total Harmonic Distortion, THD -- %
10
1.0
0.1
100
0 50 100 150 200
THD -- VIN
IT02316
THD : VCC=4.5V
f=1kHz
IDSS : VDS=5.0V
250μA
350μA
IDSS=150μA
Input Voltage, VIN -- mV
Total Harmonic Distortion, THD -- %
80
100
120
40
20
60
0
0 16014012010080604020
PD -- Ta
IT02317
Ambient Temperature, Ta -- °C
Allowable Power Dissipation, PD -- mW
THD : VCC=4.5V
V
IN=30mV
f=1kHz
R
L=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
--7
--6
--5
--4
--3
--2
--1
0
0 100 200 300 400 500 0 100 200 300 400 500
GV -- IDSS
IT13910
--1.7
--1.5
--1.3
--1.1
--0.9
--0.7
--0.5 ΔGVV -- IDSS
IT13911
ΔGVV : VCC=4.5V→1.5V
V
IN=10mV
f=1kHz
R
L=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
GV : VCC=4.5V
V
IN=10mV
f=1kHz
R
L=1.0kΩ
Cin=15pF
IDSS : VDS=5.0V
Drain Current, IDSS -- μA
Voltage Gain, GV -- dB
Drain Current, IDSS -- μA
Reduced Voltage Characteristic, ΔGVV -- dB
TF202THC
No. A1285-5/6
Outline Drawing Land Pattern Example
TF202THC-4-TL-H, TF202THC-5-TL-H
Mass (g) Unit
mm Unit: mm
0.0012
* For reference
0.5
0.4
0.45 0.45
0.45 0.45
1.1
TF202THC
PS No. A1285-6/6
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