■
Limiting Values（Absolute Maxim um Rating）
Item
Symbol
Unit
Conditions GBU25
02 04 06 08 10
Storage Temperat ure Tstg ℃ -40 ~+150
Junction Temperature Tj ℃ +150
Repetitive Peak Reverse Voltage VRRM V 200 400 600 800 1000
Average Rectifi ed Output Current Io A
50HZ sine wave, R-load
With heatsink Tc=98℃ 25
Without heatsink Ta=25℃ 3.5
Surge(Non-r epetitive)Forward Cur rent IFSM A 50HZ sine wave, 1 cycle, Ta=25℃ 300
Dielectric Strength Vdis kV Terminals to case，AC 1 minu te 2.5
Mounting Torque TOR kg·cm Recommend torque：5kg·cm 8
■
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol
Unit
Test Condition
Max
Peak Forward Voltage VFM V
IFM=12.5A, Pulse mea surement, Rating of per diode 1.1
Peak Reverse Current IRRM1 μA VRM=VRRM , Pulse measurement, Rating of per diode 10
Thermal Resistance
RθJ-A
℃/W
Between junc tion and ambient, Without heatsink 22
RθJ-L Between junction and lead, Without heatsink 4.2
RθJ-C
Between junc tion and case, With heatsink 5
■Features
●
Io25A
●
VRRM 200V~1000V
●
Glass passivated chi p
●
High surge forward
current c apability
■
Applications
●
General purpose 1 phase Br idge
rectifier app lic at ions
GBU
■
. : Out line Dimen sio ns and Mark, Unit：mm
25A BRIDGE RECTIFIER
GBU2502
THRU
GBU2510
Forward Characteristics
0 2 4 6 8 10 12 14
Characteristics(Typical)
60
50
40
30
20
10
0
4
3
2
1
0
P（W
）
IO
（A
）
IO
（A
）
Ta（℃）
0 40 80 120 160
P-IO Curve
P.C.B
.
+
～
～
－
50
20
10
5
2
1
0.5
0.2
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
IF
（A
）
VF（V）
300
250
200
150
100
1 2 5 10 20 50 100
IFSM
（A）
Surge Forward Cur rent C apa bi lity
Number of Cycles
10ms
10ms
1cycle
IFSM
0
soldering land 5m m φ
non-repetitive
Ta=25℃
sine wave
on glass-epoxi substrate
si ne wave R
-
load
free in air
sine wave
Ta=150℃
Ta=25℃
Ta=150℃
pulse test
per one diode
I
O
-T
a
IO-Ta Curve
25
20
15
10
IO（A
）
TC（℃）
80 90 100 110 120 130 140 150 160
si ne wave,R-load
With heatsink
heatsink TC
T
C
I
O
-T
C
Curve
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