(INTERSIL FEATURES Silicon Planar Epitaxial Construction * Low Noise - NF = 2.0 dB max. @ 100 MHz , NF = 4.0 dB max. @ 400 MHz * Low Feedback Capacitancef- Cg. = 0.8 pF max. Low Output Capacitance - Cogs = 2.0 pF max. High Transconductance - gg = 4000 zmho min. 18 dB min. @ 100 MHz 10 dB min. @ 400 MHz High Power Gain ~ Gps Gps ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted) Maximum Temperatures Storage Temperature TO72 65C to + 200C TOg2 55C to 126C Operating Junction Temperature TO72 + 200C TO92 +125C Lead Temperature (Soldering, 10 sec time limit) + 300C Maximum Power Dissipation ITE4416, 2N441G/A N-Channel JFET CONFIGURATIONS 10-72 PIN TO-92 6 5 s s 0 @ CHIP TOPOGRAPHY 035 Goze FULL R. 5000 re. ibd 13 | Th CE - 0035 5 0095 en Device Dissipation @ Free Air Temperature 300 mw | Linear Di * 9082 erating TO 72 1.7 MWIeC 2 og wore. sussraare TO 92 3.0 MW/G on IS GATE. roa Maximum Voltages & Current 2N4416 (ITE 4116) 2N4416A ORDERING INFORMATION Vas Gate to Source Voltage 30V 35V TO-92 TO-72 WAFER DICE Ven Drain to Drain Voltage ~30V 00-35 ITE 4416 | 2Naa16 | 2Nagie/W | 2N4416/D Ig Gate Current tov 10 mA 2N4416A | 2NA416A/W | 2N4416A/D ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) PARAMETER MIN MAX UNIT TEST CONDITIONS -0.1 nA _ - igss Gate Reverse Current 07 aA VGS = -20 V, Vos = 0 750C -30 _ _ I2N4416, ITE! BVGss Gate-Source Breakdown Voltage "35 v Ig =-1 BA, Vpsg =0 ON4416A =6 = . 2N4416,|TE VGS(otf} Gate-Source Cutoff Vattage 35 6 v Vos=15V,Ip=1nA ON4416A Ipss Drain Current at Zero Gate Voltage 5 15 mA fs Common-Source Forward Transconductance 4500 7500 umho _ f=1kHz Gos Common-Source Output Conductance 50 ymho Vps = 15 V. Vae=0 Crs Common-Source Reverse Transfer Capacitance 08 pF DS VGS Ciss Common-Source Input Capacitance 4 pF f=1MHe Coss Common-Source Output Capacitance 2 na 7100 MHz 400 MHz . PARAMETER MIN MAX MIN MAX UNIT TEST CONDITIONS Giss Common-Source Input Conductance 100 1000 umho biss Common-Source Input Susceptance 2500 10,000 pmho Common-Source Output 1 Joss Conductance 78 90 umho Vos = 18 V, Vos = 0 Common-Source Output 4 Boss Susceptance 1000 1000 umho Common-Source Forward Ss Transconductance 4000 umho Gps Common-Source Power Gain 18 10 dB Vps=15V.Ip =5mA NF Noise Figure 2 4 dB Vps = 15 V, Ip =5 mA, RG =1K2 1-71