Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400m A DARLINGT ON TRANSISTOR ARRAY
DESCRIPTION
M54566P and M54566FP are seven-circuit collector-current-
synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
ÁHigh breakdown voltage (BV CEO ≥ 50V)
ÁHigh-current driving (Ic(max) = 400mA)
ÁActive L-level input
ÁW ide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Interfaces between microcomputers and high-voltage, high-
current drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
FUNCTION
The M54566 is produced by adding PNP transistors to
M54222 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and PNP
transistor base. The input emitters are connected to VCC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
The M54566FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
10
–0.5 ~ +50
400
–0.5 ~ VCC
1.47(P)/1.00(FP)
–20 ~ +75
–55 ~ +125
V
V
mA
V
W
°C
°C
20K
2.7K
7.2K 3K
8K
GND
V
CC
INPUT OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
The seven circuits share the V
CC
and GND.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 °C)
Ratings UnitSymbol Parameter Conditions
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
VCC
VCEO
IC
VI
Pd
Topr
Tstg
1IN1→
IN2→
IN3→
IN4→
IN5→
IN6→
IN7→
VCC
GND
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1
16P4(P)
Package type 16P2N-A(FP)
INPUT OUTPUT
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400m A DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
V
mA
mA
—
V
(BR) CEO
II
ICC
hFE
V
VCE (sat)
V
V
V
V
5
—
—
—
8
50
VCC
VCC–3
IC
0
0
—
—mA
4
0
VCC–0.2
0
350
200
—
2.2
1.6
–0.58
3.0
—
ICEO = 100µA
VI = VCC–3V, IC = 350mA
VI = VCC–3V, IC = 200mA
VI = VCC–3.5V
VCC = 5V, VI = VCC–3.5V
VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C
Symbol UnitParameter Test conditions Limits
min typ+max
50
—
—
—
—
2000
—
1.1
0.9
–0.38
1.4
10000
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
ns
ns
ton
toff
—
—95
2500 —
—
Symbol UnitParameter Test conditions Limits
min typ max
TIMING DIAGRAMNOTE 1 TEST CIRCUIT
VCC
VO
VIH
VIL
Parameter Limits
Symbol Unit
Supply voltage
Output voltage
min typ max
“H” input voltage
“L” input voltage
VCC = 5V, Duty Cycle
P : no more than 30%
FP : no more than 20%
VCC = 5V, Duty Cycle
P : no more than 10%
FP : no more than 6%
Collector current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
Collector-emitter breakdown voltage
Input current
Supply current (one circuit coming on)
DC amplification factor
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
CL = 15pF (note 1)
Turn-on time
Turn-off time
PG
50ΩC
L
R
L
V
CC
V
O
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Z
O
= 50Ω
V
I
= 1 to 4V
(2) Input-output conditions : R
L
= 30Ω, V
O
= 10V, V
CC
= 4V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Measured
device
ton
50% 50%
50% 50%
toff
INPUT
OUTPUT
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400m A DARLINGTON TRANSISTOR ARRAY
TYPICAL CHARACTERISTICS
Duty-Cycle-Collector Characteristics
(M54566P)
Duty cycle (%)
➁
➂
➀
➃
➄
➅
➆
Collector current Ic (mA)
0
200
100
300
400
500
020 40 60 80 100
➅
➄
➆
Duty cycle (%)
➀
➁
➃
➂
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54566P)
0
200
100
300
400
500
020 40 60 80 100
➄➅
➆
Duty cycle (%)
➀
➁
➂
➃
Collector current Ic (mA)
Duty-Cycle-Collector Characteristics
(M54566FP)
0
200
100
300
400
500
020 40 60 80 100
Duty-Cycle-Collector Characteristics
(M54566FP)
Duty cycle (%)
➁
➂
➀
➃
➄➅
➆
Collector current Ic (mA)
0
200
100
300
400
500
020 40 60 80 100
Thermal Derating Factor Characteristics
Ambient temperature Ta (°C)
M54566FP
M54566P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25 50 75 100
Output Saturation Voltage
Collector Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
200
100
300
400
00.5 1.0 1.5 2.0
Collector current Ic (mA)
VCC = 4V
VI = 1V
Ta = 75°C
Ta = 25°C
Ta = –20°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 5V
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 5V
•Ta = 75°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit.
•V
CC
= 5V
•Ta = 25°C
•The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value in the circle represents the
value of the simultaneously-operated circuit. •V
CC
= 5V
•Ta = 75°C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400m A DARLINGTON TRANSISTOR ARRAY
Input Characteristics
Supply voltage-Input voltage V
CC–
V
I
(V)
0
–0.4
–0.2
–0.6
–0.8
–1.0
012345
Input current I
I
(mA)
Vcc = 8V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Grounded Emitter Transfer Characteristics
Supply voltage-Input voltage V
CC–
V
I
(V)
0
200
100
300
400
00.4 0.8 1.2 1.6
Collector current Ic (mA)
Vcc = 4V
V
CE
= 4V
Ta = 75°C
Ta = 25°C
Ta = –20°C
Supply Current Characteristics
Supply voltage V
CC
(V)
0
2
1
3
4
5
0246810
Supply current Icc (mA)
V
I
= 0V
Ta = 75°C
Ta = 25°C
Ta = –20°C
DC Amplification Factor
Collector Current Characteristics
Collector current Ic (mA)
10
1
10
3
Vcc = 4V
V
CE
= 4V Ta = 25°C
Ta = 75°C
Ta = –20°C
5
3
2
7
5
3
2
7
10
4
10
3
10
2
23 57 23 57
10
2
DC amplification factor h
FE
