MJ4502G - ON SEMICONDUCTOR - Datasheet.Directory

October, 2009 − Rev. 12

1Publication Order Number:

MJ4502/D

MJ4502

High-Power PNP Silicon

Transistor

This transistor is for use as an output device in complementary audio

amplifiers to 100−Watts music power per channel.

Features

•High DC Current Gain − hFE = 25−100 @ IC = 7.5 A

•Excellent Safe Operating Area

•Complement to the NPN MJ802

•Pb−Free Package is Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCER 100 Vdc

Collector−Base Voltage VCB 100 Vdc

Collector−Emitter Voltage VCEO 90 Vdc

Emitter−Base Voltage VEB 4.0 Vdc

Collector Current IC30 Adc

Base Current IB7.5 Adc

Total Device Dissipation @ TC = 25_C

Derate above 25_C

PD200

1.14

W/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +200 _C

THERMAL CHARACTERISTICS

Characteristics Symbol Max Unit

Thermal Resistance, Junction−to−Case qJC 0.875 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

30 AMPERE

POWER TRANSISTOR

PNP SILICON

100 VOLTS − 200 WATTS

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MARKING DIAGRAM

Device Package Shipping

ORDERING INFORMATION

MJ4502 TO−204 100 Units / Tray

MJ4502G TO−204

(Pb−Free)

100 Units / Tray

MJ4502G

AYYWW

MEX

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MJ4502 = Device Code

G = Pb−Free Package

A = Assembly Location

YY = Year

WW = Work Week

MEX = Country of Origin

MJ4502

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Breakdown Voltage (Note 1)

(IC = 200 mAdc, RBE = 100 W)

ÎÎÎÎ

V(BR)CER

ÎÎÎÎ

100

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 200 mAdc)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

−

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Base Cutoff Current

(VCB = 100 Vdc, IE = 0)

(VCB = 100 Vdc, IE = 0, TC = 150_C)

ÎÎÎÎ

ICBO

ÎÎÎÎ

−

ÎÎÎÎ

1.0

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter−Base Cutoff Current

(VBE = 4.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

−

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

100

ÎÎÎ

−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter “On” Voltage

(IC = 7.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

−

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector−Emitter Saturation Voltage

(IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

0.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base−Emitter Saturation Voltage

(IC = 7.5 Adc, IB = 0.75 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

−

ÎÎÎÎ

1.3

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain − Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.0

ÎÎÎÎ

−

ÎÎÎ

MHz

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

200

150

00 20 40 60 80 100 120 140 160 180 200

Figure 1. Power−Temperature Derating Curve

TC, CASE TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

100

MJ4502

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3.0

0.03

Figure 2. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1 0.05 0.1 0.2 0.3 3.0 5.0 30

1.0

0.5

0.3

0.2

2.0

IC, COLLECTOR CURRENT (AMP)

1.4

0.8

0.6

0.4

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

“ON” VOLTAGE (VOLTS)

Figure 3. “On” Voltages

2.0

0.7

hFE, NORMALIZED CURRENT GAIN

TJ = 175°C

25°C

-55°C

VCE = 2.0 V

DATA SHOWN IS OBTAINED FROM PULSE TESTS

AND ADJUSTED TO NULLIFY EFFECT OF ICBO.

0.5 1.0 2.0 2010

VBE @ VCE = 2.0 V

0.2

1.0

1.2

1.8

1.6

0.03 0.05 0.1 0.2 0.3 3.0 5.0 300.5 1.0 2.0 2010

Figure 4. Active Region Safe Operating Area

100

0.1

5.0

2.0

1.0

0.5

0.2

1.0 2.0 3.0 5.0 10 20 30 50 100

VCE, COLLECTOR‐EMITTER VOLTAGE (VOLTS)

SECONDARY BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATIONS @ TC = 25°C

PULSE DUTY CYCLE v 10%

IC, COLLECTOR CURRENT (AMP)

TJ = 200°C

5.0 ms

1.0 ms

100 msThe Safe Operating Area Curves indicate IC − VCE limits

below which the device will not enter secondary breakdown.

Collector load lines for specific circuits must fall within the

applicable Safe Area to avoid causing a catastrophic failure.

To insure operation below the maximum TJ,

power−temperature derating must be observed for both

steady state and pulse power conditions.

MJ4502

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PACKAGE DIMENSIONS

TO−204 (TO−3)

CASE 1−07

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

−T−SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

−Q−

−Y−

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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MJ4502/D

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