IPA60R160C6=HI1 - Infineon Technologies

MOSFET

MetalOxideSemiconductorFieldEffectTransistor

CoolMOS™C6600V

600VCoolMOS™C6PowerTransistor

IPx60R160C6

DataSheet

Rev.2.3

Final

PowerManagement&Multimarket

drain

pin 2

gate

pin 1

source

pin 3

600V CoolMOS"C6 Power Transistor IPA60R160C6, IPB60R160C6

IPP60R160C6 IPW60R160C6

1 Description

CoolMOS"is a revolutionary technology for high voltage power

MOSFETs, designed according to the superjunction (SJ) principle

and pioneered by Infineon Technologies. CoolMOS"C6 series

combines the experience of the leading SJ MOSFET supplier with

high class innovation. The offered devices provide all benefits of a

fast switching SJ MOSFET while not sacrificing ease of use.

Extremely low switching and conduction losses make switching

applications even more efficient, more compact, lighter, and cooler.

Features

• Extremely low losses due to very low FOM Rdson*Qgand Eoss

• Very high commutation ruggedness

• Easy to use/drive

• JEDEC1) qualified, Pb-free plating, Halogen free

Applications

PFC stages, hard switching PWM stages and resonant switching

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

Lighting, Server, Telecom and UPS.

Please note: For MOSFET paralleling the use of ferrite beads on

the gate or separate totem poles is generally recommended.

1) J-STD20 and JESD22

Table 1 Key Performance Parameters

Parameter Value Unit

VDS @Tj,max 650 V

RDS(on),max 0.16 !

Qg,typ 75 nC

ID,pulse 70 A

Eoss @ 400V 6 µJ

Body diode di/dt500 A/µs

Type / Ordering Code Package Marking Related Links

IPW60R160C6 PG-TO247 IFX C6 Product Brief

IPB60R160C6 PG-TO263 6R160C6 IFX C6 Portfolio

IPP60R160C6 PG-TO220 IFX CoolMOS Webpage

IPA60R160C6 PG-TO220 FullPAK IFX Design tools

Rev. 2.3

Page 2

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Table of Contents

1 Description ..................................................................... 2

Table of Contents ................................................................ 3

2 Maximum ratings ................................................................ 4

3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

6 Test circuits .................................................................... 13

7 Package outlines ............................................................... 14

8 Revision History ................................................................ 18

Table of Contents

Rev. 2.3

Page 3

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Maximum ratings

Final Data Sheet 4 Rev. 2.1, 2010-02-09

2Maximum ratings

at Tj= 25 °C, unless otherwise specified.

Table 2 Maximum ratings

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current1)

1) Limited by Tj,max. Maximum duty cycle D=0.75

ID- - 23.8 A TC= 25 °C

15 TC= 100°C

Pulsed drain current2)

2) Pulse width tplimited by Tj,max

ID,pulse - - 70 A TC=25 °C

Avalanche energy, single pulse EAS - - 497 mJ ID=4.1 A,VDD=50 V

(see table 21)

Avalanche energy, repetitive EAR - - 0.75 ID=4.1 A,VDD=50 V

Avalanche current, repetitive IAR - - 4.1 A

MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V

Gate source voltage VGS -20 - 20 V static

-30 30 AC (f>1 Hz)

Power dissipation for

TO-220, TO-247, TO-263

Ptot - - 176 W TC=25 °C

Power dissipation for

TO-220 FullPAK

Ptot - - 34

Operating and storage temperature Tj,Tstg -55 - 150 °C

Mounting torque

TO-220, TO-247

- - 60 Ncm M3 and M3.5 screws

Mounting torque

TO-220 FullPAK

50 M2.5 screws

Continuous diode forward current IS- - 20.6 A TC=25 °C

Diode pulse current2) IS,pulse - - 70 A TC=25 °C

Reverse diode dv/dt3)

3) Identical low side and high side switch with identical RG

dv/dt - - 15 V/ns VDS=0...400 V,ISD "ID,

Tj=25 °C

Maximum diode commutation

speed3)

dif/dt 500 A/µs

Rev. 2.3

Page 4

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Thermal characteristics

Final Data Sheet 5 Rev. 2.1, 2010-02-09

3 Thermal characteristics

Table 3 Thermal characteristics TO-220 (IPP60R160C6),TO-247 (IPW60R160C6)

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Thermal resistance, junction - case RthJC - - 0.71 °C/W

Thermal resistance, junction -

ambient

RthJA - - 62 leaded

Soldering temperature,

wavesoldering only allowed at

leads

Tsold - - 260 °C 1.6 mm (0.063 in.)

from case for 10 s

Table 4 Thermal characteristics TO-220FullPAK (IPA60R160C6)

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Thermal resistance, junction - case RthJC - - 3.67 °C/W

Thermal resistance, junction -

ambient

RthJA - - 80 leaded

Soldering temperature,

wavesoldering only allowed at

leads

Tsold - - 260 °C 1.6 mm (0.063 in.)

from case for 10 s

Table 5 Thermal characteristics TO-263 (IPB60R160C6)

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Thermal resistance, junction - case RthJC - - 0.71 °C/W

Thermal resistance, junction -

ambient

RthJA - - 62 SMD version, device

on PCB, minimal

footprint

- 35 - SMD version, device

on PCB, 6cm2cooling

area1)

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2copper area (thickness 70µm) for drain connection.

PCB is vertical without air stream cooling.

Soldering temperature,

wave- & reflow soldering allowed

Tsold - - 260 °C reflow MSL1

Rev. 2.3

Page 5

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics

Final Data Sheet 6 Rev. 2.1, 2010-02-09

4 Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 6 Static characteristics

Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.

Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0 V, ID=0.25 mA

Gate threshold voltage VGS(th) 2.5 3 3.5 VDS=VGS,ID=0.75 mA

Zero gate voltage drain current IDSS - - 1 µA VDS=600 V, VGS=0 V,

Tj=25 °C

- 10 - VDS=600 V, VGS=0 V,

Tj=150 °C

Gate-source leakage current IGSS - - 100 nA VGS=20 V, VDS=0 V

Drain-source on-state resistance RDS(on) - 0.14 0.16 !VGS=10 V, ID=11.3 A,

Tj=25 °C

- 0.37 - VGS=10 V, ID=11.3 A,

Tj=150 °C

Gate resistance RG- 6.4 - !f=1 MHz, open drain

Table 7 Dynamic characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Input capacitance Ciss - 1660 - pF VGS=0 V, VDS=100 V,

f=1 MHz

Output capacitance Coss - 100 -

Effective output capacitance,

energy related1)

1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS

Co(er) - 66 - VGS=0 V,

VDS=0...480 V

Effective output capacitance, time

related2)

2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS

Co(tr) - 314 - ID=constant, VGS=0 V

VDS=0...480V

Turn-on delay time td(on) - 13 - ns VDD=400 V,

VGS=13 V, ID=11.3 A,

RG= 1.7!

(see table 20)

Rise time tr- 13 -

Turn-off delay time td(off) - 96 -

Fall time tf- 8 -

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 6

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics

Final Data Sheet 7 Rev. 2.1, 2010-02-09

Table 8 Gate charge characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Gate to source charge Qgs - 9 - nC VDD=480 V,

ID=11.3 A,

VGS=0 to 10 V

Gate to drain charge Qgd - 38 -

Gate charge total Qg- 75 -

Gate plateau voltage Vplateau - 5.4 - V

Table 9 Reverse diode characteristics

Parameter Symbol Values Unit Note /

Test Condition

Min. Typ. Max.

Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=11.3 A,

Tj=25 °C

Reverse recovery time trr - 460 - ns VR=400 V, IF=11.3 A,

diF/dt=100 A/µs

(see table 22)

Reverse recovery charge Qrr - 8.2 - µC

Peak reverse recovery current Irrm - 35 - A

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 7

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Final Data Sheet 8 Rev. 2.1, 2010-02-09

5 Electrical characteristics diagrams

Table 10

Power dissipation

TO-220, TO-247, TO-263

Power dissipation

TO-220 FullPAK

Ptot = f(TC)Ptot = f(TC)

Table 11

Max. transient thermal impedance

TO-220, TO-247, TO-263

Max. transient thermal impedance

TO-220 FullPAK

Z(thJC)=f(tp); parameter: D=tp/T Z(thJC)=f(tp); parameter: D=tp/T

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 8

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Final Data Sheet 9 Rev. 2.1, 2010-02-09

Table 12

Safe operating area TC=25 °C

TO-220, TO-247, TO-263

Safe operating area TC=25 °C

TO-220 FullPAK

ID=f(VDS); TC=25 °C; D=0; parameter tpID=f(VDS); TC=25 °C; D=0; parameter tp

Table 13

Safe operating area TC=80 °C

TO-220, TO-247, TO-263

Safe operating area TC=80 °C

TO-220 FullPAK

ID=f(VDS); TC=80 °C; D=0; parameter tpID=f(VDS); TC=80 °C; D=0; parameter tp

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 9

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Final Data Sheet 10 Rev. 2.1, 2010-02-09

Table 14

Typ. output characteristics TC=25 °C Typ. output characteristics Tj=125 °C

ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS

Table 15

Typ. drain-source on-state resistance Drain-source on-state resistance

RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=11.3 A; VGS=10 V

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 10

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Final Data Sheet 11 Rev. 2.1, 2010-02-09

Table 16

Typ. transfer characteristics Typ. gate charge

ID=f(VGS); VDS=20V VGS=f(Qgate), ID=11.3 A pulsed

Table 17

Avalanche energy Drain-source breakdown voltage

EAS=f(Tj); ID=4.1 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 11

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Electrical characteristics diagrams

Final Data Sheet 12 Rev. 2.1, 2010-02-09

Table 18

Typ. capacitances Typ. Coss stored energy

C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS)

Table 19

Forward characteristics of reverse diode

IF=f(VSD); parameter: Tj

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 12

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Test circuits

Final Data Sheet 13 Rev. 2.1, 2010-02-09

6 Test circuits

Table 20 Switching times test circuit and waveform for inductive load

Switching times test circuit for inductive load Switching time waveform

Table 21 Unclamped inductive load test circuit and waveform

Unclamped inductive load test circuit Unclamped inductive waveform

Table 22 Test circuit and waveform for diode recovery times

Test circuit for diode recovery times Diode recovery waveform

VDS

VGS

d(on)

d(off)

off

10%

90%

VDS

V(BR)DS

VDS

RG1

RG2

RG1 =RG2

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Rev. 2.2, 2014-12-02

Rev. 2.3

Page 13

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Package outlines

Final Data Sheet 14 Rev. 2.1, 2010-02-09

7 Package outlines

Figure 1 Outlines TO-247, dimensions in mm/inches

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 14

2018-02-26

600V CoolMOS"C6 Power Transistor

IPx60R160C6

Package outlines

Final Data Sheet 15 Rev. 2.1, 2010-02-09

Figure 2 Outlines TO-220, dimensions in mm/inches

Rev. 2.2, 2014-12-02

Rev. 2.3

Page 15

2018-02-26

6**M =^^[FGKm =6H^fTa LaP]bXbc^a

CHx6*J160=6

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DIMENSIONS MIN. MAX.

øP

2.86

2.42

2.54

28.70

0.95

15.67

0.40

0.65

10.00

2.83

3.15

3.00

12.78

8.97

29.75

0.90

0.63

1.51

16.15

3.50

3.30

3.45

13.75

10.65

9.83

MILLIMETERS

4.50

2.34

4.90

2.85

b1 0.95 1.38

b4 0.65 1.51

b3 0.65 1.38 1

SCALE

Z8B00003319

REVISION

ISSUE DATE

EUROPEAN PROJECTION

27.01.2017

05mm

DOCUMENT NO.

5:1

2 3 4

1 2 3

Rev. 2.3

Page 16

2018-02-26

Figure 3 Outline PGTO220 FullPAK dimensions in mm

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Rev. 2.2, 2014-12-02

Rev. 2.3

Page 17

2018-02-26

600VCoolMOSªC6PowerTransistor

IPx60R160C6

Rev.2.3,2018-03-04

RevisionHistory

IPx60R160C6

Revision:2018-03-04,Rev.2.3

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2011-06-08 Release of final data sheet

2.1 2011-09-14 -

2.2 2015-02-03 PG-TO220 FullPAK package outline update (creation:2014-12-02)

2.3 2018-03-04 Outline PG-TO220 FullPAK update

TrademarksofInfineonTechnologiesAG

AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,

EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,

ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,

PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,

SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.

TrademarksupdatedAugust2015

OtherTrademarks

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