VVZ 24 IdAVM = 27 A VRRM = 1200-1600 V Three Phase Half Controlled Rectifier Bridge 2 VRSM VDSM VRRM VDRM V V 1300 1500 1700 1200 1400 1600 1 6 3 1 Type 5 VVZ 24-12io1 VVZ 24-14io1 VVZ 24-16io1 4 3 2 6 7 8 5 7 4 8 Test Conditions IdAV IdAVM IFRMS, ITRMS TK = 100C; module module per leg IFSM, ITSM TVJ = 45C; VR = 0 I2t Maximum Ratings 21 27 16 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 300 320 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 270 290 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 450 430 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 365 350 A2s A2s 150 A/ms Features Applications (di/dt)cr (dv/dt)cr TVJ = TVJM repetitive, IT = 50 A f =400 Hz, tP =200 ms VD = 2/3 VDRM IG = 0.3 A, non repetitive, IT = 1/3 * IdAV diG/dt = 0.3 A/ms A/ms 1000 V/ms 10 V 10 5 1 0.5 W W W W -40...+125 125 -40...+125 C C C 3000 3600 V~ V~ 2-2.5 18-22 28 Nm lb.in. g TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) VRGM PGM TVJ = TVJM IT = ITAVM tp = 30 ms tp = 500 ms tp = 10 ms PGAVM TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) (10-32 UNF) Weight typ. Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved Input rectifier for switch mode power supplies (SMPS) Softstart capacitor charging Electric drives and auxiliaries Advantages 500 Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Soldering terminals UL registered E 72873 Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") 303 Symbol 1-3 VVZ 24 Symbol Test Conditions Characteristic Values IR, ID VR = VRRM; VD = VDRM VF, VT IF, IT = 30 A, TVJ = 25C VT0 rT For power-loss calculations only (TVJ = 125C) VGT VD = 6 V; IGT TVJ = TVJM TVJ = 25C 5 0.3 mA mA 1.45 V 1 V 16 mW VD = 6 V; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C TVJ = 125C 1.0 1.2 65 80 50 V V mA mA mA VGD IGD TVJ = TVJM; TVJ = TVJM; VD = 2/3 VDRM VD = 2/3 VDRM 0.2 5 V mA IL IG = 0.3 A; tG = 30 ms diG/dt = 0.3 A/ms TVJ = 25C TVJ = -40C TVJ = 125C 150 200 100 mA mA mA IH TVJ = 25C; VD = 6 V; RGK = 100 mA tgd TVJ = 25C; VD = 1/2 VDRM IG = 0.3 A; diG/dt = 0.3 A/ms 2 ms tq Qr TVJ = 125C; IT = 15 A, tp = 300 ms, -di/dt = 10 A/ms VR = 100 V, dv/dt = 20 V/ms, VD = 2/3 VDRM typ. 150 75 ms mC RthJC per thyristor (diode); DC current per module per thyristor (diode); DC current per module 2.1 0.35 2.7 0.45 K/W K/W K/W K/W RthJH dS dA a Creeping distance on surface Creepage distance in air Max. allowable acceleration (c) 2003 IXYS All rights reserved 7 mm 7 mm 50 m/s2 2-3 VVZ 24 10 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V VG 1 1 2 3 6 4 5 4: PGAV = 0.5 W 0.1 1 Fig. 1 Surge overload current per chip IFSM: Crest value, t: duration Fig. 2 I2t versus time (1-10 ms) per chip 5: PGM = 1 W 6: PGM = 10 W IGD, TVJ = 125C 10 100 1000 IG mA Fig. 3 Gate trigger characteristics Triggering: Fig. 4 Power dissipation versus direct output current and ambient temperature 3 ZthJK K/W ZthJK 2 Constants for ZthJK calculation 1 i 0 10-3 1 2 3 10-2 10-1 100 101 Rthi (K/W) ti (s) 0.17 1.4 1.1 0.028 0.44 2.6 102 s Fig. 5 Transient thermal impedance junction to heatsink (c) 2003 IXYS All rights reserved 750 t 3-3