©2004 Fairchild Semiconductor Corporation Rev. A, April 2004
PN4302
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Thermal Charac t eris ti cs
T
a
=25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DG
Drain-Gate Volt age 30 V
V
GS
Gate-Source Volt age -30 V
I
GF
Forward Gate Current 50 mA
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V
(BR)GSS
Gate-Source Breakdwon Voltage I
G
= -1.0µA, V
DS
= 0 -30 V
I
GSS
Gate Reverse Current V
GS
= -10V, V
DS
= 0 -1.0 nA
V
GS(off)
Gate-Source Cutof f Voltage V
DS
= 20V, I
D
= 1.0nA -4.0 V
On Characteristics
I
DSS
Zero-Gate Voltage Drain Current * V
DS
= -15V, V
GS
= 0 0.5 5.0 mA
Symbol Parameter Max. Units
P
D
Total Device Dissipation
Derate above 25°C625
5.0 mW
mW/°C
R
θJC
Thermal Resistance, Junction to Case 125 °C/W
R
θJA
Thermal Resistance, Junction to Ambient 357 °C/W
PN4302
N-Channel General Purpose Amplifier
• This device is designed primarily for low level audio and general
purpose applications with high impedance signal sources.
• Sourced from process 52.
TO-92
1. Drain 2. Source 3. Gate
1
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
PN4302
Dimensions in Millimeters
Rev. A, April 2004©2004 Fairchild Semiconductor Corporation
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Advance Information
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Obsolete
This datasheet contains the design specifications for
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any manner without notice.
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