BFS17P
Mar-21-20051
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at collector
currents from 1 mA to 20 mA
1
2
3
VPS05161
Type Marking Pin Configuration Package
BFS17P MCs 1 = B 2 = E 3 = C SOT23
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 2.5
Collector current IC25 mA
Peak collector current, f = 10 MHz ICM 50
Total power dissipation
TS ≤ 55 °C 1)
Ptot 280 mW
Junction temperature T
j
150 °C
Ambient temperature TA-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point2) RthJS ≤ 340 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
BFS17P
Mar-21-20052
Electrical Characteristics a TA = 25°C, unless otherwise specified.
Parameter Symbol UnitValues
min. max.typ.
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 15 - V-
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 25 V, IE = 0
ICBO
-
-
-
-
µA
0.05
10
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
IEBO - 100-
DC current gain
IC = 2 mA, VCE = 1 V
IC = 25 mA, VCE = 1 V
hFE
20
20
-
150
-
-
70
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA
VCEsat - 0.1 0.4 V
BFS17P
Mar-21-20053
Electrical Characteristics at T
A
= 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
AC characteristics
Transition frequency
IC = 2 mA, VCE = 5 V, f = 200 MHz
IC = 25 mA, VCE = 5 V, f = 200 MHz
fT
1
1.3
1.4
2.5
-
-
GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Ccb - 0.55 0.8 pF
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Cce - 0.25 -
Input capacitance
VEB = 0.5 V, IC = 0 , f = 1 MHz
Cibo - 1.45 -
Output capacitance
VCE = 5 V, VBE = 0 , f = 1 MHz
Cobs - - 1.5
Noise figure
IC = 2 mA, VCE = 5 V, f = 800 MHz,
ZS = 50 Ω
F- 3.5 5 dB
Transducer gain
IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω ,
f = 500 MHz
|S21e|2- 12.7 -
Linear output voltage
IC = 14 mA, VCE = 5 V, dim = 60 dB,
f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50Ω
V01=V02 - 100 - mV
Third order intercept point
IC = 14 mA, VCE = 5 V, ZS=ZSopt , ZL=ZLopt ,
f = 800 MHz
IP3- 23 - dBm
BFS17P
Mar-21-20054
Total power dissipation Ptot = f(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
40
80
120
160
200
240
mW
320
Ptot
Permissible Pulse Load RthJS = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = f (tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
Ptotmax / PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BFS17P
Mar-21-20055
Collector-base capacitance Ccb = f (VCB)
f = 1MHz
0 4 8 12 16 20 V26
VCB
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
pF
1.3
Ccb
Transition frequency fT = f (IC)
VCE = Parameter
0 5 10 15 20 mA 30
IC
0.0
0.5
1.0
1.5
2.0
GHz
3.0
fT
10V
5V
3V
2V
1V
0.7V
Package SOT23
Package Outline
Foot Print
Marking Layout
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
2.6 MAX.
0.25
M
BC
1.9
-0.05
+0.1
0.4 1
A
2
±0.1
3
2.9
DIN 6784
+0.2
acc. to
0.95
C
B
2
˚
30
˚
0.20
...
M
A
0.1 MAX.
10
˚
0.08...0.15
1.1 MAX.
1.3
±0.1
MAX.
10
˚
MAX.
0.8
1.2
0.91.10.9
0.8
Manufacturer
Date code (Year/Month)
Type code
2003, July
BCW66
Example
Pin 1
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
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