© 2011 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ 500 V
VGSS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C 80 A
IDM TC= 25°C, Pulse Width Limited by TJM 240 A
IATC= 25°C 80A
EAS TC= 25°C5J
dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 50 V/ns
PDTC= 25°C 1250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Torque (TO-264) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS247) 20..120 /4.5..27 N/lb.
Weight TO-264 10 g
PLUS247 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.5 6.5 V
IGSS VGS = ±30V, VDS = 0V ±200 nA
IDSS VDS = VDSS, VGS = 0V 50 μA
TJ = 125°C 2 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 65 mΩ
HiperFETTM
Power MOSFETs
Q3-Class
IXFK80N50Q3
IXFX80N50Q3
VDSS = 500V
ID25 = 80A
RDS(on) ≤≤
≤≤
≤ 65mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
DS100299(02/11)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G = Gate D = Drain
S = Source Tab = Drain
PLUS247 (IXFX)
Tab
G
DS
TO-264 (IXFK)
S
G
D
Tab
Features
zLow Intrinsic Gate Resistance
zLow Package Inductance
zFast Intrinsic Rectifier
zLow RDS(on) and QG
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
zDC-DC Converters
zBattery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
zTemperature and Lighting Controls
Advance Technical Information
IXFK80N50Q3
IXFX80N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = 20V, ID = 0.5 • ID25, Note 1 35 55 S
Ciss 10 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1260 pF
Crss 115 pF
RGi Gate Input Resistance 0.15 Ω
td(on) 30 ns
tr 20 ns
td(off) 43 ns
tf 15 ns
Qg(on) 200 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 77 nC
Qgd 90 nC
RthJC 0.10 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V 80 A
ISM Repetitive, Pulse Width Limited by TJM 320 A
VSD IF = IS, VGS = 0V, Note 1 1.4 V
trr 250 ns
QRM 1.8 μC
IRM 15.6 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
IF = 40A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Terminals: 1 - Gate
2 - Drain
3 - Source
PLUS 247TM Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Millimeter Inches
Min. Max. Min. Max.
A 4.82 5.13 .190 .202
A1 2.54 2.89 .100 .114
A2 2.00 2.10 .079 .083
b 1.12 1.42 .044 .056
b1 2.39 2.69 .094 .106
b2 2.90 3.09 .114 .122
c 0.53 0.83 .021 .033
D 25.91 26.16 1.020 1.030
E 19.81 19.96 .780 .786
e 5.46 BSC .215 BSC
J 0.00 0.25 .000 .010
K 0.00 0.25 .000 .010
L 20.32 20.83 .800 .820
L1 2.29 2.59 .090 .102
P 3.17 3.66 .125 .144
Q 6.07 6.27 .239 .247
Q1 8.38 8.69 .330 .342
R 3.81 4.32 .150 .170
R1 1.78 2.29 .070 .090
S 6.04 6.30 .238 .248
T 1.57 1.83 .062 .072
Dim.
TO-264 AA Outline
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK80N50Q3
IXFX80N50Q3
Fi g . 1. O u tp u t C haract er i stics @ T
J
= 25ºC
0
10
20
30
40
50
60
70
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V
DS
- Volts
I
D
- Ampere s
V
GS
= 10V
8
V
7
V
9
V
Fi g . 2. Exten d ed Output Char ac ter i stics @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
180
0 5 10 15 20 25 30
V
DS
- V o lt s
I
D
- Amperes
V
GS
= 10V
7
V
9
V
8
V
Fi g . 3. Ou tp u t C harac ter i st i cs @ T
J
= 125º C
0
10
20
30
40
50
60
70
80
0 2 4 6 8 10 12
V
DS
- Volts
I
D
- Amperes
7
V
8V
6V
V
GS
= 10V
9V
Fig. 4. R
DS(on)
No r mali zed to I
D
= 40A Valu e vs.
Junction T emperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
3.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 80A
I
D
= 40A
Fig. 5. R
DS(on)
Normalized to I
D
= 40A Valu e vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
0 20 40 60 80 100 120 140 160 180
I
D
- Amp e res
R
DS(on)
- Normalized
V
GS
= 10V T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximum Drain C u r r en t vs .
Case Temp er atu re
0
10
20
30
40
50
60
70
80
90
-50-250 255075100125150
T
C
- Degrees Centigrade
I
D
- Amperes
IXFK80N50Q3
IXFX80N50Q3
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fig. 7. Input Admittance
0
20
40
60
80
100
120
4.55.05.56.06.57.07.58.08.59.09.510.0
V
GS
- V olt s
I
D
- Amper es
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
0 20 40 60 80 100 120
I
D
- A mpere s
g
f s - S iemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
40
80
120
160
200
240
0.30.40.50.60.70.80.91.01.11.21.31.4
V
SD
- Vo lts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280
Q
G
- Nan oCo ul omb s
V
GS
- Volts
V
DS
= 250V
I
D
= 40A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
Capacitance - Pi coFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
0.1
1
10
100
1000
10 100 1,000
V
DS
- Vo lts
I
D
- Amperes
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
100µs
1ms
R
DS(on)
Limit
© 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_80N50Q3(Q8)02-18-11
IXFK80N50Q3
IXFX80N50Q3
Fi g . 13. Maximu m T ran si en t Th er mal Impedan ce
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 13. Maximum Transient Thermal Impedance
aaaaa
0.2
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
