Kwa -THOMSON Y, SES THOMSON MJE370 MJE520 COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene- ral purpose amplifier and switching circuits. INTERNAL SCHEMATIC DIAGRAMS SOT-32 (TO-126) c B B PNP NPN $-6096 5-6097 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Veso Coliector-base Voltage (le = 0) 30 Vv VcEo Collector-emitter Voltage (lp = 0) 30 Vv VeBo Emitter-base Voltage (Ic = 0) 4 Vv Ic Collector Current 3 A lom Collector Peak Current 7 A lg Base Current 2 A Prot Total Power Dissipation at Tcase < 25 C 25 Ww Tstg Storage Temperature 65 to 150 C Tj Junction Temperature 150 G For PNP types voltage and current values are negative. December 1988 1/4 841MJE370-MJE520 THERMAL DATA [ Rin j-case | Thermal Resistance Junction-case Max 1 5 | C/W | ELECTRICAL CHARACTERISTICS (Tas. = 25C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit IcBo Collector Cutoff Current Vop =30V 100 BA (te = Q) lego Emitter Cutoff Current (lc =0) | Veg =4V 100 HA Vceoisus)"| Collector-emitter Sustaining lo = 100mA 30 Vv Voltage hre* DC Current Gain Io =1A Voe =1V 25 * Pulsed : pulse duration = 300us, duty cycle < 1.5%. For PNP types voltage and current values are negative. Safe Operating Areas. DC Current Gain (NPN type). G-$360 h Ie ta) 10 | icMAX PULSED PULSE OPERATIONY 100 us. OPERATION SINGLE NON REPETITIVE 1! ; 10 Vee () 10 DC Current Gain (PNP type). DC Transconductance (NPN type). le ore E= br 6A} 4 0 Os 1 1 Vee? 2/4 ky7 SSS;THOMSON 842We loflve ve cee DC Transconductance(PNP type). -I (A) 4 0 05 1 1S -VgelV) Collector-emitter saturation voltage (PNP type). G-4Baz \eeisat) Wy Os ' 0 10? Igima) Transition Frequency (PNP type). fT (MHz) to" 1 -Ic ta) by Collector-emitter Saturation Voltage (NPN type). ~487 Yce(sat (Vv) 2 1 10 10 igtma} Transition Frequency (NPN type). fr (MHz) 0 10" 1 Ic (a) Collector-base Capacitance (NPN type). 4 (pF) -1 2 466 2 ooee 2 4 68 10 1 10 Yep (VY) SGS-THOMSON 3/4 MICROELECTRONICS 843MJE370-MJE520 Collector-base Capacitance (PNP type). cao (pF) : z 4 bo 2 48 68 2 4 6B 10-1 1 10 -Vegt Saturated switching characteristics (PNP types). t tus)? 5 . = Tpi=-lg2 hge=t0 ts 107 1 ic (a) 4/4 ky 844 SGS-THOMSON MICROELECTROMICS Saturated Switching Characteristics (NPN type). t (ws) Tay? -Ip2 hpe=t0 6 @ 107 1 Ic (A