MUR820, MUR860, MUR8100
Ultra Fast Recovery Diodes
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min. Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54 4.08
5.85 6.85
2.54 3.42
1.15 1.77
- 6.35
0.64 0.89
4.83 5.33
3.56 4.82
0.38 0.56
2.04 2.49
0.64 1.39
Inches
Min. Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
- 0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Dimensions TO-220AC
MUR820
MUR860
MUR8100
VRSM
V
200
600
1000
VRRM
V
200
600
1000
A=Anode, C=Cathode, TAB=Cathode
CA
Symbol Test Conditions Maximum Ratings Unit
IFRMS
IFAVM
IFRM
TVJ=TVJM
TC=115oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
16
8
130 A
TVJ=45oC t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
TVJ=150oC t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
100
110
85
95
A
IFSM
TVJ=45oC t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
TVJ=150oC t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
50
50
36
37
A2s
I2t
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
oC
Ptot TC=25oC
MdMounting torque
50
0.4...0.6
2
W
Nm
Weight g
C(TAB) CA
MUR820, MUR860, MUR8100
ADVANTAGES
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
APPLICATIONS
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
FEATURES
* International standard package
JEDEC TO-220AC
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
Symbol Test Conditions Characteristic Values
typ. max. Unit
TVJ=25oC; VR=VRRM
TVJ=25oC; VR=0.8.VRRM
TVJ=125oC; VR=0.8.VRRM
20
10
1.5
uA
uA
mA
IR
IF=8A; TVJ=150oC
TVJ=25oC1.3
1.5 V
VF
RthJC
RthCK
RthJA
2.5
60 K/W
0.5
VR=350V; IF=8A; -diF/dt=64A/us; L<0.05uH; TVJ=100oC
trr IF=1A; -di/dt=50A/us; VR=30V; TVJ=25oC ns
IRM 2.8 A
35
VTO For power-loss calculations only 0.98 V
rT28.7 m
TVJ=TVJM
50
2.5
_
Ultra Fast Recovery Diodes
MUR820, MUR860, MUR8100
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
Ultra Fast Recovery Diodes
