NSS40302PDR2G - ON Semiconductor - Datasheet.Directory

September, 2008 − Rev. 0

1Publication Order Number:

NSS40302P/D

NSS40302PDR2G

Complementary 40 V, 6.0 A,

Low VCE(sat) Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are surface mount devices featuring ultra low saturation

voltage (VCE(sat)) and high current gain capability. These are designed

for use in low voltage, high speed switching applications where

affordable efficient energy control is important.

Typical applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•Halide Free

•This is a Pb−Free Device

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector-Emitter Voltage NPN

PNP

VCEO 40

−40

Vdc

Collector-Base Voltage NPN

PNP

VCBO 40

−40

Vdc

Emitter-Base Voltage NPN

PNP

VEBO 6.0

−7.0

Vdc

Collector Current − Continuous NPN

PNP

IC3.0

−3.0

Collector Current − Peak NPN

PNP

ICM 6.0

−6.0

Electrostatic Discharge ESD HBM Class 3B

MM Class C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

Device Package Shipping†

ORDERING INFORMATION

NSS40302PDR2G SOIC−8

(Pb−Free)

2500 /

Tape & Reel

DEVICE MARKING

SOIC−8

CASE 751

STYLE 16

http://onsemi.com

40 VOLTS, 6.0 AMPS

COMPLEMENTARY LOW

VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 80 mW

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

COLLECTOR

7,8

BASE

EMITTER

COLLECTOR

5,6

BASE

EMITTER

C40302

AYWWG

C40302 = Specific Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

NSS40302PDR2G

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THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

SINGLE HEATED

Total Device Dissipation (Note 1)

TA = 25°C

Derate above 25°C

PD576

4.6

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 217 °C/W

Total Device Dissipation (Note 2)

TA = 25°C

Derate above 25°C

PD676

5.4

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 185 °C/W

DUAL HEATED (Note 3)

Total Device Dissipation (Note 1)

TA = 25°C

Derate above 25°C

PD653

5.2

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 191 °C/W

Total Device Dissipation (Note 2)

TA = 25°C

Derate above 25°C

PD783

6.3

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 160 °C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

1. FR−4 @ 10 mm2, 1 oz. copper traces, still air.

2. FR−4 @ 100 mm2, 1 oz. copper traces, still air.

3. Dual heated values assume total power is the sum of two equally powered devices.

NSS40302PDR2G

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NPN ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO

40 − −

Vdc

Collector−Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO

40 − −

Vdc

Emitter−Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO

6.0 − −

Vdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

ICBO

− − 0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc)

IEBO

− − 0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = 10 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

hFE

200

180

400

350

340

320

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = 0.1 A, IB = 0.010 A)

(IC = 1.0 A, IB = 0.100 A)

(IC = 1.0 A, IB = 0.010 A)

(IC = 2.0 A, IB = 0.200 A)

VCE(sat)

−

0.008

0.044

0.080

0.082

0.011

0.060

0.115

Base −Emitter Saturation Voltage (Note 5)

(IC = 1.0 A, IB = 0.01 A)

VBE(sat)

−0.780 0.900

Base −Emitter Turn−on Voltage (Note 5)

(IC = 0.1 A, VCE = 2.0 V)

VBE(on)

−0.650 0.750

Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)

100 − −

MHz

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo −320 450 pF

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo −40 50 pF

SWITCHING CHARACTERISTICS

Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td− − 100 ns

Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr− − 100 ns

Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts− − 780 ns

Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf− − 110 ns

4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

NSS40302PDR2G

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PNP ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −10 mAdc, IB = 0)

V(BR)CEO

−40 − −

Vdc

Collector−Base Breakdown Voltage

(IC = −0.1 mAdc, IE = 0)

V(BR)CBO

−40 − −

Vdc

Emitter−Base Breakdown Voltage

(IE = −0.1 mAdc, IC = 0)

V(BR)EBO

−7.0 − −

Vdc

Collector Cutoff Current

(VCB = −40 Vdc, IE = 0)

ICBO

− − −0.1

mAdc

Emitter Cutoff Current

(VEB = −6.0 Vdc)

IEBO

− − −0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 5)

(IC = −10 mA, VCE = −2.0 V)

(IC = −500 mA, VCE = −2.0 V)

(IC = −1.0 A, VCE = −2.0 V)

(IC = −2.0 A, VCE = −2.0 V)

hFE

250

220

180

150

380

340

300

230

−

Collector−Emitter Saturation Voltage (Note 5)

(IC = −0.1 A, IB = −0.010 A)

(IC = −1.0 A, IB = −0.100 A)

(IC = −1.0 A, IB = −0.010 A)

(IC = −2.0 A, IB = −0.200 A)

VCE(sat)

−

−0.013

−0.075

−0.130

−0.135

−0.017

−0.095

−0.170

Base −Emitter Saturation Voltage (Note 5)

(IC = −1.0 A, IB = −0.01 A)

VBE(sat)

− −0.780 −0.900

Base −Emitter Turn−on Voltage (Note 5)

(IC = −0.1 A, VCE = −2.0 V)

VBE(on)

− −0.660 −0.750

Cutoff Frequency

(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)

100 − −

MHz

Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo −250 300 pF

Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo −50 65 pF

SWITCHING CHARACTERISTICS

Delay (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) td− − 60 ns

Rise (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) tr− − 120 ns

Storage (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) ts− − 400 ns

Fall (VCC = −30 V, IC = −750 mA, IB1 = −15 mA) tf− − 130 ns

5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

NSS40302PDR2G

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NPN TYPICAL CHARACTERISTICS

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.02

0.06

0.10

0.12

0.16

1010.10.010.001

0.05

0.10

0.15

0.20

0.25

0.30

Figure 3. DC Current Gain vs. Collector

Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

100

200

300

500

600

1010.10.010.001

0.3

0.4

0.5

0.6

0.7

0.8

1.0

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A)

1010.10.010.001

0.2

0.3

0.4

0.5

0.7

0.8

0.9

1.0

0.10.010.0010.0001

0.1

0.3

0.4

0.5

0.7

0.9

1.0

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

hFE, DC CURRENT GAIN

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER TURN−ON

VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

VOLTAGE (V)

IC/IB = 10 150°C

25°C

−55°C

IC/IB = 100

150°C

25°C

−55°C

400

150°C (5.0 V)

150°C (2.0 V)

25°C (5.0 V)

25°C (2.0 V)

−55°C (5.0 V)

−55°C (2.0 V)

0.9 IC/IB = 10

150°C

25°C

−55°C

0.6

VCE = +2.0 V

150°C

25°C

−55°C

0.2

0.6

0.8 100 mA 1 A 2 A 3 A

0.04

0.08

0.14

700

0.2

NSS40302PDR2G

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NPN TYPICAL CHARACTERISTICS

Figure 7. Input Capacitance Figure 8. Output Capacitance

VEB, EMITTER−BASE VOLTAGE (V) Vcb, COLLECTOR−BASE VOLTAGE (V)

6543210

150

175

200

250

300

400

35302520151050

Cibo, INPUT CAPACITANCE (pF)

Cobo, OUTPUT CAPACITANCE (pF)

Cobo (pF)

Cibo (pF)

350

225

275

325

375

Figure 9. Safe Operating Area

10 ms

100 ms

1 s

Thermal Limit

1 ms

VCE (Vdc)

1001.00.10.01

0.001

0.1

IC (A)

1.0

Single Pulse Test at TA = 25°C

0.01

NSS40302PDR2G

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PNP TYPICAL CHARACTERISTICS

Figure 10. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.05

0.10

0.15

0.20

0.25

1010.10.010.001

0.05

0.10

0.15

0.20

0.25

0.30

Figure 12. DC Current Gain vs. Collector

Current

Figure 13. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

100

200

300

500

600

700

800

1010.10.010.001

0.3

0.4

0.5

0.6

0.7

0.8

1.0

1.1

Figure 14. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 15. Saturation Region

IC, COLLECTOR CURRENT (A) Ib, BASE CURRENT (A)

1010.10.010.001

0.2

0.3

0.4

0.5

0.7

0.8

0.9

1.0

0.10.010.0010.0001

0.2

0.6

0.8

1.0

1.4

1.8

2.0

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

hFE, DC CURRENT GAIN

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER TURN−ON

VOLTAGE (V)

VCE(sat), COLLECTOR−EMITTER

VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

IC/IB = 100

150°C

25°C

−55°C

400

150°C (5.0 V)

150°C (2.0 V)

25°C (5.0 V)

25°C (2.0 V)

−55°C (5.0 V)

−55°C (2.0 V)

0.9

IC/IB = 10

150°C

25°C

−55°C

0.6

VCE = −2.0 V

150°C

25°C

−55°C

0.4

1.2

1.6 100 mA 1 A 2 A 3 A

NSS40302PDR2G

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PNP TYPICAL CHARACTERISTICS

Figure 16. Input Capacitance Figure 17. Output Capacitance

VEB, EMITTER BASE VOLTAGE (V) Vcb, COLLECTOR BASE VOLTAGE (V)

6543210

100

150

200

250

300

350

35302520151050

100

Cibo, INPUT CAPACITANCE (pF)

Cobo, OUTPUT CAPACITANCE (pF)

Cobo (pF)

Cibo (pF)

Figure 18. Safe Operating Area

10 ms

100 ms

1 s

Thermal Limit

1 ms

VCE (Vdc)

1001.00.10.01

0.001

0.1

IC (A)

1.0

Single Pulse Test at TA = 25°C

0.01

NSS40302PDR2G

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PACKAGE DIMENSIONS

SOIC−8 NB

CASE 751−07

ISSUE AJ

SEATING

PLANE

X 45 _

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDARD IS 751−07.

0.10 (0.004)

DIM

MIN MAX MIN MAX

INCHES

4.80 5.00 0.189 0.197

MILLIMETERS

B3.80 4.00 0.150 0.157

C1.35 1.75 0.053 0.069

D0.33 0.51 0.013 0.020

G1.27 BSC 0.050 BSC

H0.10 0.25 0.004 0.010

J0.19 0.25 0.007 0.010

K0.40 1.27 0.016 0.050

M0 8 0 8

N0.25 0.50 0.010 0.020

S5.80 6.20 0.228 0.244

−X−

−Y−

0.25 (0.010)

−Z−

0.25 (0.010) ZSXS

____

1.52

0.060

7.0

0.275

0.6

0.024

1.270

0.050

4.0

0.155

ǒmm

inchesǓ

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT* STYLE 16:

PIN 1. EMITTER, DIE #1

2. BASE, DIE #1

3. EMITTER, DIE #2

4. BASE, DIE #2

5. COLLECTOR, DIE #2

6. COLLECTOR, DIE #2

7. COLLECTOR, DIE #1

8. COLLECTOR, DIE #1

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

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Phone: 81−3−5773−3850

NSS40302P/D

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