VS-123NQ100PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 1Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 120 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and
long term reliability
• Designed and qualified for industrial level
• UL approved file E222165
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-123NQ.. high current Schottky rectifier module
series has been optimized for low reverse leakage at high
temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in high current switching power
supplies, plating power supplies, UPS systems, converters,
freewheeling diodes, welding, and reverse battery
protection.
PRIMARY CHARACTERISTICS
IF(AV) 120 A
VR100 V
Package HALF-PAK (D-67)
Circuit configuration Single
Lug terminal
anode
Base
cathode
HALF-PAK (D-67)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 120 A
VRRM 100 V
IFSM tp = 5 μs sine 12 800 A
VF120 Apk, TJ = 125 °C 0.73 V
TJRange -55 to +175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-123NQ100PbF UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 5 IF(AV) 50 % duty cycle at TC = 133 °C, rectangular waveform 120 A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
12 800
A
10 ms sine or 6 ms rect. pulse 1800
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 5.5 A, L = 1 mH 15 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 1A
VS-123NQ100PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 2Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width = 500 μs
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1 VFM (1)
120 A TJ = 25 °C 0.91
V
240 A 1.26
120 A TJ = 125 °C 0.73
240 A 0.9
Maximum reverse leakage current
See fig. 2 IRM
TJ = 25 °C VR = Rated VR
3mA
TJ = 125 °C 40
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 2650 pF
Typical series inductance LSFrom top of terminal hole to mounting plane 7.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range TJ, TStg -55 to +175 °C
Maximum thermal resistance, junction to case RthJC DC operation
See fig. 4 0.38 °C/W
Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.05
Approximate weight 30 g
1.06 oz.
Mounting torque minimum
Non-lubricated threads
3 (26.5)
N m
(lbf in)
maximum 4 (35.4)
Terminal torque minimum 3.4 (30)
maximum 5 (44.2)
Case style HALF-PAK module
100
10
1
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
0 1.0 2.00.5
1000
1.5
TJ = 25 °C
TJ = 175 °C
TJ = 125 °C
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (mA)
0.001
0.01
0.1
0 80 100
10
1000
20 40 60
100
1
TJ = 175 °C
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
VS-123NQ100PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 3Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
10 000
VR - Reverse Voltage (V)
CT - Junction Capacitance (pF)
0
20 40 50 60 70 80 90 100 11010 30
1000
100
TJ = 25 °C
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 110
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
100
120
140
180
0 60 120 18030 90 150
160
110
DC
Square wave (D = 0.50)
80 % rated VR applied
See note (1)
170
150
130
IF(AV) - Average Forward Current (A)
Average Power Loss (W)
020
40 60 80 100 120 180
0
20
60
120
140
80
40
100
160
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
RMS limit
VS-123NQ100PbF
www.vishay.com Vishay Semiconductors
Revision: 08-May-17 4Document Number: 94129
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95020
tp - Square Wave Pulse Duration (µs)
IFSM - Non-Repetitive Surge Current (A)
10 100 1000 10 000
100
100 000
1000
10 000
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
- Average current rating (x 10)
1
2
- Product silicon identification
3
- N = not isolated
4
- Q = Schottky rectifier diode
5
- Voltage rating (100 = 100 V)
6
7- Lead (Pb)-free
Device code
51 32 4 6 7
12VS- 3 N Q 100 PbF
- Vishay Semiconductors product
Document Number: 95020 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 20-May-09 1
D-67 HALF-PAK
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
30 ± 0.05
(1.2 ± 0.002)
5 (0.20)
4 (0.16)
13 (0.51)
24.4 (0.96)
5 (0.196) + 45° Ø 7.3 ± 0.1 (0.29 ± 0.0039)
17.5 (0.69)
16.5 (0.65)
Ø 4.3 - 0.1
0.0
(Ø 0.169 )
- 0.004
0.000
¼" - 20 UNC
40 MAX. (1.58)
21 (0.82)
20 (0.78)
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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