MMBT3906
Silicon PNP Transistor
General Purpose Amp, Surface Mount
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Collector−Emitter Voltage, VCEO 40V......................................................
Collector−Base Voltage, VCBO 40V.......................................................
Emitter−Base Voltage, VEBO 5V..........................................................
Continuous Collector Current, IC200mA..................................................
Total Device Dissipation (Note 2), PD350mW.............................................
Derate above +25C 2.8mW/C....................................................
Thermal Resistance, Junction−to−Ambient (Note 2), RthJA 375C/W..........................
Operating Junction Temperature Range, TJ−55 to +150C.................................
Storage Temperature Range, Tstg −55 to +150C.........................................
Note 1. These are steady−state limits and are based on a maximum junction temperature of +150C.
Note 2. Device is mounted on FR−4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0, Note 3 40 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 40 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 5− − V
Base Cut−Off Current IBL VCE = 30V, VBE = 3V − − 50 nA
Collector Cutoff Current ICEX VCE = 30V, VBE = 3V − − 50 nA
ON Characteristics
DC Current Gain (Note 3) hFE VCE = 1V, IC = 0.1mA 60 − −
VCE = 1V, IC = 1mA 80 − −
VCE = 1V, IC = 10mA 100 −300
VCE = 1V, IC = 50mA 60 − −
VCE = 1V, IC = 100mA 30 − −
Collector−Emitter Saturation Voltage VCE(sat) IC = 10mA, IB = 1mA − − 0.25 V
IC = 50mA, IB = 5mA − − 0.40 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10mA, IB = 1mA 0.65 −0.85 V
IC = 50mA, IB = 5mA − − 0.95 V
Note 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.