BFP540FESD Low Noise Silicon Bipolar RF Transistor * For ESD protected high gain low noise amplifier 3 * Excellent ESD performance 2 4 1 typical value 1000 V (HBM) * Outstanding Gms = 20 dB Minimum noise figure NFmin = 0.9 dB * Pb-free (ROHS compliant) and halogen-free thin small flat package with visible leads * Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP540FESD Marking AUs 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings at TA = 25 C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 C 4.5 TA = -55 C 4 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 1 Collector current IC 80 Base current IB 8 Total power dissipation1) Ptot 250 mW Junction temperature TJ 150 C Storage temperature TStg mA TS 80 C 1T S is -55 ... 150 measured on the emitter lead at the soldering point to the pcb 1 2013-09-05 BFP540FESD Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS Value Unit 280 K/W Values Unit Electrical Characteristics at T A = 25 C, unless otherwise specified Symbol Parameter min. typ. max. 4.5 5 - V ICES - - 10 A ICBO - - 100 nA IEBO - - 10 A hFE 50 110 170 - DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-05 BFP540FESD Electrical Characteristics at TA = 25 C, unless otherwise specified Symbol Values Parameter Unit min. typ. max. 21 30 - Ccb - 0.16 0.26 Cce - 0.4 - Ceb - 0.55 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure dB NFmin IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt - 0.9 1.4 IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt - 1.3 - Gms - 20 - dB Gma - 14.5 - dB Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz |S21e|2 Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz 15.5 18 - - 13 - IP3 - 24.5 - P-1dB - 11 - IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 3GHz Third order intercept point at output2) dB dBm VCE = 2 V, IC = 20 mA, ZS = ZL = 50, f = 1.8GHz 1dB compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz 1G 1/2 ma = |S21e / S12e| (k-(k-1) ), Gms = |S21e / S12e| 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz 3 2013-09-05 BFP540FESD Total power dissipation P tot = (TS) 300 PTOT mW 200 150 100 50 0 0 30 60 90 C 150 TS 4 2013-09-05 Package TSFP-4 5 BFP540FESD 2013-09-05 BFP540FESD Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-09-05 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: BFP540FESDH6327XTSA1