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BFP540FESD
1
2
4
3
Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB
• Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP540FESD AUs 1=B 2=E 3=C 4=E - - TSFP-4
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
4.5
4
V
Collector-emitter voltage VCES 10
Collector-base voltage VCBO 10
Emitter-base voltage VEBO 1
Collector current IC80 mA
Base current IB8
Total power dissipation1)
TS ≤ 80 °C
Ptot 250 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to the pcb
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 280 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 10 V, VBE = 0
ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - - 100 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - - 10 µA
DC current gain
IC = 20 mA, VCE = 3.5 V, pulse measured
hFE 50 110 170 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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BFP540FESD
Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 4 V, f = 1 GHz
fT21 30 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.16 0.26 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.4 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.55 -
Minimum noise figure
IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt
NFmin
-
-
0.9
1.3
1.4
-
dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 20 - dB
Power gain, maximum available1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt, f = 3 GHz
Gma - 14.5 - dB
Transducer gain
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 3GHz
|S21e|2
15.5
-
18
13
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, ZS = ZL = 50Ω, f = 1.8GHz
IP3 - 24.5 - dBm
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50Ω, f = 1.8GHz
P-1dB - 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Total power dissipation Ptot = ƒ(TS)
0 30 60 90 °C 150
TS
0
50
100
150
200
mW
300
PTOT
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BFP540FESD
Package TSFP-4
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BFP540FESD
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
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