Philips Semiconductors Preliminary specification
Three quadrant triacs BTA208X series C
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-hs Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W
without heatsink compound - - 6.5 K/W
Rth j-a Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IGT Gate trigger current2VD = 12 V; IT = 0.1 A T2+ G+ 2 - 35 mA
T2+ G- 2 - 35 mA
T2- G- 2 - 35 mA
ILLatching current VD = 12 V; IGT = 0.1 A T2+ G+ - - 20 mA
T2+ G- - - 30 mA
T2- G- - - 20 mA
IHHolding current VD = 12 V; IGT = 0.1 A - - 15 mA
VTOn-state voltage IT = 10 A - 1.3 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
IDOff-state leakage current VD = VDRM(max); Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); Tj = 125 ˚C; exponential 1000 - V/µs
off-state voltage waveform; gate open circuit
dIcom/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 8 A; without 3 14 A/ms
commutating current snubber; gate open circuit
tgt Gate controlled turn-on ITM = 12 A; VD = VDRM(max); IG = 0.1 A; - 2 µs
time dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.000