1165897 Darlington complementary silicon power transistors. Designed for general-purpose amplifier and low frequency switching applications. Features: * High DC current gain - hFE = 3500 (typical) at IC = 5.0A dc. * Collector-emitter sustaining voltage - at 100mA VCEO (sus) = 80V dc (minimum) - 2N6058. * Monolithic construction with built-in-base-emitter shunt resistors. (TO-3) Dimensions A Maximum 1.550 (39.37) Reference B - 1.050 (26.67) C 0.250 (6.35) 0.335 (8.51) D 0.038 (0.97) 0.043 (1.09) E 0.055 (1.40) 0.070 (1.77) G 0.430 (10.92) BSC H 0.215 (5.46) BSC K Style 1: Pin 1. Base 2. Emitter Collector (Case) Minimum L 0.440 (11.18) 0.480 (12.19) - 0.830 (21.08) Q 0.151 (3.84) 0.165 (4.19) V (TO-3) Case 1-07 0.665 (16.89) BSC N U Darlington 12 Ampere Complementary Silicon Power Transistors 80 - 100 Volts 150 Watts 1.187 (30.15) BSC 0.131 (3.33) 0.188 (4.77) Dimensions : Inches (Millimetres) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <1> 22/10/08 V1.1 1165897 Maximum Ratings (1) Characteristic Symbol Value Unit VCEO Collector-Emitter Voltage 80 CoIIector-Base Voltage VCB Emitter-Base Voltage VEB 5.0 Collector Current-Continuous -Peak IC 12 20 A dc Base Current IB 0.2 A dc Total Device Dissipation at TC = 25C Derate above 25C PD 150 0.857 W W/C TJ, TStg -65 to +200C C Symbol Maximum Unit RJC 1.17 C/W Operating and Storage Junction Temperature Range V dc Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Case (1) Indicates JEDEC Registered Data. PD, Power Dissipation (Watts) Power Derating TC, Case Temperature (C) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <2> 22/10/08 V1.1 1165897 *Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit V dc Off Characteristics Collector-Emitter Sustaining Voltage (2) (lC = 100mA dc, lB = 0) 2N6058 VCEO (sus) 80 - Collector Cut off Current (VCE = 40V dc, IB = 0) 2N6058 ICEO - 1.0 Collector Cut off Current (VCE = Rated VCEO, VBE (off) = 1.5V dc) (VCE = Rated VCEO, VBE (off) = 1.5V dc, TC = 150C) ICEX - 0.5 5.0 Emitter Cut off Current (VBE = 5.0V dc, IC = 0) IEBO - 2.0 hFE 750 100 18,000 - Collector-Emitter Saturation Voltage (IC = 6.0A dc, lB = 24mA dc) (IC = 12A dc, lB = 120mA dc) VCE (sat) - 2.0 3.0 Base-Emitter Saturation Voltage (IC = 12A dc, IB = 120mA dc) VBE (sat) - 4.0 Base-Emitter On Voltage (IC = 6.0A dc, VCE = 3.0V dc) VBE (on) - 2.8 hfe 4.0 - MHz Cob - 500 300 pF hfe 300 - - mA dc On Characteristics (2) DC Current Gain (IC = 6.0A dc, VCE = 3.0V dc) (IC = 12A dc, VCE = 3.0V dc) - V dc Dynamic Characteristics Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio (IC = 5.0A dc, VCE = 3.0V dc, f = 1.0MHz) Output Capacitance (VCB = 10V dc, IE = 0, f = 0.1MHz) 2N6058 Small-Signal Current Gain (IC = 5.0A dc, VCE = 3.0V dc, f = 1.0kHz) *Indicates JEDEC Registered Data. (2) Pulse test: Pulse Width = 300s, Duty Cycle = 2.0%. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <3> 22/10/08 V1.1 1165897 Switching Times Test Circuit For NPN Test Circuit Reverse Diode and Voltage Polarities. r (t), Effective Transient Thermal Resistance (Normalized) Thermal Response t, Time (ms) Active-Region Safe Operating Area IC, Collector Current (Amperes) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data is based on TJ (pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ (pk) 200C; TJ (pk) may be calculated from the data. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. VCE, Collector-Emitter Voltage (Volts) http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <4> 22/10/08 V1.1 1165897 Small-Signal Current Gain C, Capacitance (pF) hfe, Small-Signal Current Gain Capacitance VR, Reverse Voltage (Volts) DC Current Gain Collector Saturation Region hFE, DC Current Gain VCE, Collector-Emitter Voltage (Volts) f, Frequency (kHz) IB, Base Current (mA) IC, Collector Current (Amperes) "On" Voltages Description Part Number Darlington Transistor, TO-3 2N6058 V, Voltage (Volts) Part Number Table IC, Collector Current (Amperes) Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. SPC Multicomp is the registered trademark of the Group. (c) Premier Farnell plc 2008. http://www.farnell.com http://www.newark.com http://www.cpc.co.uk Page <5> 22/10/08 V1.1